Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of a non-single-crystal silicon material

ABSTRACT

A light receiving member for electrophotography made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on the aluminum support, wherein the multilayered light receiving layer consists of a lower layer in contact with the support and an upper layer, the lower layer being made of an inorganic material containing at least aluminum atom (Al), silicon atoms (Si) and hydrogen atoms (H), and having portion in which the aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, the upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X) and containing at least one of carbon atoms, nitrogen atoms (N) and oxygen atoms (O) in the layer region in adjacent with the lower layer. The light receiving member for electrophotography can overcome all of the foregoing problems and exhibits extremely excellent electrical property, optical property, photoconductivity, durability, image property and circumstantial property of use.

This application is a division of application Ser. No. 183,998 filedApr. 20, 1988, now U.S. Pat. No. 4,906,542.

FIELD OF THE INVENTION

This invention concerns a light receiving member sensitive toelectromagnetic waves such as light (which herein means in a broadersense those lights such as ultraviolet rays, visible rays, infraredrays, X-rays, and γ-rays).

More particularly, it relates to an improved light receiving memberhaving a multilayered light receiving layer composed of a lower layermade of an inorganic material containing at least aluminum atoms,silicon atoms, and hydrogen atoms, and an upper layer made ofnon-single-crystal silicon material, which is suitable particularly foruse in the case where coherent lights such as laser beams are applied.

BACKGROUND OF THE INVENTION

The light receiving member used for image formation has a lightreceiving layer made of a photoconductive material. This material isrequired to have characteristic properties such as high sensitivity,high S/N ratio (ratio of light current (Ip) to dark current (Id)),absorption spectral characteristic matching the spectral characteristicof electromagnetic wave for irradiation, rapid optical response,appropriate dark resistance, and non-toxicity to the human body at thetime of use. The non-toxicity at the time of use is an importantrequirement in the case of a light receiving member for electronicphotography which is built into an electronic photographic apparatusused as an office machine.

A photoconductive material attracting attention at present from thestandpoint mentioned above is amorphous silicon (A-Si for shorthereinafter). The application of A-Si to the light receiving member forelectrophotography is disclosed in, for example, German Patent Laid-openNos. 746967 and 2855718.

FIG. 2 is a schematic sectional view showing the layer structure of theconventional light receiving member for electrophotography. There areshown an aluminum support 201 and a photosensitive layer of A-Si 202This type of light receiving member for electrophotography is usuallyproduced by forming the photosensitive layer 202. of A-Si on thealuminum support 201 heated to 50°-350° C., by deposition, hot CVDprocess, plasma CVD process, plasma CVD process or sputtering.

Unfortunately, this light receiving member for electrophotography has adisadvantage that the sensitive layer 202 of A-Si is liable to crack orpeel off during cooling subsequent to the film forming step, because thecoefficient of thermal expansion of aluminum is nearly ten times as highas that of A-Si. To solve this problem, there was proposed aphotosensitive body for electrophotography which is composed of analuminum support, an inter mediate layer containing at least aluminumand a sensitive layer of A-Si (Japanese Patent Laid-open No.28162/1984). The intermediate layer containing at least aluminumrelieves the stress arising from the difference in the coefficient ofthermal expansion between the aluminum support and the A-Si sensitivelayer, thereby reducing the cracking and peeling of the A-Si sensitivelayer.

The conventional light receiving member for electrophotography which hasthe light receiving layer made of A-Si has been improved in electrical,optical, and photoconductive characteristics (such as dark resistance,photosensitivity, and light responsivity), adaptability of useenvironment, stability with time, and durability. Nevertheless, it stillhas room for further improvement in its overall performance.

For the improvement of image characteristics, several improvements hasrecently been made on the optical exposure unit, development unit, andtransfer unit in the electrophotographic apparatus. This, in turn, hasrequired the light receiving member for electrophotography to beimproved further in image characteristics. With the improvement ofimages in resolving power, the users have begun to require furtherimprovements such as the reduction of unevenness (so-called "coarseimage") in the region where the image density delicately changes, andthe reduction of image defects (so-called "dots") which appear in blackor white spots, especially the reduction of very small "dots" whichattracted no attention in the past.

Another disadvantage of the conventional light receiving member forelectrophotography is its low mechanical strength. When it comes intocontact with foreign matters which have entered the electrophotographicapparatus, or when it comes into contact with the main body or toolswhile the electrophotographic apparatus is being serviced formaintenance, image defects occur or the A-Si film peels off on accountto of the mechanical shocks and pressure. These aggravate the durabilityof the light receiving member for electrophotography.

An additional disadvantage of the conventional light receiving memberfor electrophotography is that the A-Si film is susceptible to crackingand peeling on account of the stress which occurs because the A-Si filmdiffers from the aluminum support in the coefficient of thermalexpansion. This leads to lower yields in production.

Under the circumstances mentioned above, it is necessary to solve theabove-mentioned problems and to improve the light receiving member forelectrophotography from the standpoint of its structure as well as thecharacteristic properties of the A-Si material per se.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a light receivingmember for electrophotography which meets the above-mentionedrequirements and eliminates the above-mentioned disadvantages involvedin the conventional light receiving member.

According to the present invention, the improved light receiving memberfor electrophotography is made up of an aluminum support and amultilayered light receiving layer exhibiting photoconductivity formedon the aluminum support, wherein the multilayered light receiving layerconsists of a lower layer in contact with the support and an upperlayer, the lower layer being made of an inorganic material containing atleast aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H)("AlSiH" for short hereinafter), and having a portion in which thealuminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) areunevenly distributed across the layer thickness, the upper layer beingmade of a non-single-crystal material composed of silicon atoms (Si) asthe matrix and at least either of hydrogen atoms (H) or halogen atoms(X) ("Non-Si (H,X): for short hereinafter), and containing at least oneof carbon atoms (C), nitrogen atoms (N) and oxygen atoms (0) in thelayer region in adjacent with the lower layer.

The light receiving member for electrophotography in the presentinvention has the multilayered structure as mentioned above. Therefore,it is free from the abovementioned disadvantages, and it exhibitsoutstanding electric characteristics, optical characteristics,photoconductive characteristics, durability, image characteristics, andadaptability to ambient environments.

As mentioned above, the lower layer is made such that the aluminum atomsand silicon atoms, and especially the hydrogen atoms, are unevenlydistributed across the layer thickness. This structure improves theinjection of electric charge (photocarrier) across the aluminum supportand the upper layer. In addition, this structure joins the constituentelements of the aluminum support to the constituent elements of theupper layer gradually in terms of composition and constitution. Thisleads to the improvement of image characteristics relating to coarseimage and dots. Therefore, the light receiving member permits the stablereproduction of images of high quality with a sharp half tone and a highresolving power.

The above-mentioned multilayered structure prevents the image defectsand the peeling of the non-Si(H,X) film which occurs as the result ofimpactive mechanical pressure applied to the light receiving member forelectrophotography. In addition, the multilayered structure relieves thestress arising from the difference between the aluminum support and thenon-Si(H,X) film in the coefficient of thermal expansion and alsoprevents the occurrence of cracks and peeling in the non-Si(H,X) film.All this contributes to improved durability and increased yields inproduction.

Particularly, since at least one of carbon atoms, nitrogen atoms andoxygen atoms are incorporated into the layer region of the upper layerin adjacent with the lower layer in this invention, the quality of theupper layer is improved to enhance the durability to the high voltageand the close bondability between the upper layer and the lower layercan further be improved, and image defects or the peeling of theNon-Si(H,X) film can be prevented, thereby contributing to theimprovement of the durability.

According to the present invention, the lower layer of the lightreceiving member may further contain atoms to control the image ("atoms(Mc)" for short hereinafter. The incorporation of atoms (Mc) to controlthe image quality improves the injection of electric charge(photocarrier) across the aluminum support and the upper layer and alsoimproves the transferability of electric charge (photocarrier) in thelower layer. Thus the light receiving member permits the stablereproduction of images of high quality with a sharp half tone and a highresolving power.

According to the present invention, the lower layer of the lightreceiving member may further contain atoms to control the durability("atoms (CNOc) for short hereinafter). The incorporation of atoms (CNOc)greatly improves the resistance to impactive mechanical pressure appliedto the light receiving member for electrophotography. In addition, itprevents the image defects and the peeling of the non-Si(H,X) film,relieves the stress arising from the difference between the aluminumsupport and the non-Si(H,X) film in the coefficient of thermalexpansion, and prevents the occurrence of cracks and peeling in thenon-Si(H,X) film. All this contributes to improved durability andincreased yields in production.

According to the present invention, the lower layer of the lightreceiving member may further contain halogen atom (X). The incorporationof halogen atom (X) compensates for the dangling bonds of silicon atom(Si) and aluminum atom (Al), thereby creating a stable state in terms ofconstitution and structure. This, coupled with the effect produced bythe distribution of silicon atoms (Si), aluminum atoms (Al), andhydrogen atoms (H) mentioned above, greatly improves the imagecharacteristics relating to coarse image and dots.

According to the present invention, the lower layer of the lightreceiving member may further contain at least either of germanium atoms(Ge) or tin atoms (Sn). The incorporation of at least either ofgermanium atoms (Ge) or tin atoms (Sn) improves the injection ofelectric charge (photocarrier) across the aluminum support and the upperlayer, the adhesion of the lower layer to the aluminum support, and thetransferability of electric charge (photocarrier) in the lower layer.This leads to a distinct improvement in image characteristics anddurability.

According to the present invention, the lower layer of the lightreceiving member may further contain at least one kind of atoms selectedfrom alkali metal atoms, alkaline earth metal atoms, and transitionmetal atoms, ("atoms (Me)" for short hereinafter). The incorporation ofat least one kind of atoms selected from alkali metal atoms, alkalineearth metal atoms, and transition metal atoms permits more dispersion ofthe hydrogen atoms or halogen atoms contained in the lower layer (thereason for this is not yet fully elucidated) and also reduces thestructure relaxation of the lower layer which occurs with lapse of time.This leads to reduced liability of cracking and peeling even after usefor a long period of time. The incorporation of at least one kind of theabove-mentioned metal atoms improves the injection of electric charge(photocarrier) across the aluminum support and the upper layer, theadhesion of the lower layer to the aluminum support, and thetransferability of electric charge (photocarrier) in the lower layer.This leads to a distinct improvement in image characteristics anddurability, which in turn leads to the stable production and quality.

In the meantime, the above-mentioned Japanese Patent Laid-open No.28162/1984 mentions the layer containing aluminum atoms and siliconatoms unevenly across the layer thickness and also mentions the layercontaining hydrogen atoms. However, it does not mention how the layercontains hydrogen atoms. Therefore, it is distinctly different from thepresent invention.

BRIEF DESCRIPTION OF THE INVENTION

FIG. 1 is a schematic diagram illustrating the layer structure of thelight receiving member for electrophotography.

FIG. 2 is a schematic diagram illustrating the layer structure of theconventional light receiving member for electrophotography.

FIGS. 3 to 8 are diagrams illustrating the distribution state ofaluminum atoms (Al) contained in the lower layer, and also illustratingthe distribution of atoms (Mc) to control image quality, and/or atoms(CNOc) to control durability, and/or halogen atoms (X), and/or germaniumatoms (Ge), and/or tin atoms (Sn), and/or at least one kind of atomsselected from alkali metal atoms, alkaline earth metal atoms, andtransition metal atoms, which are optionally contained in the lowerlayer.

FIGS. 9 to 16 are diagrams illustrating the distribution of siliconatoms (Si) and hydrogen atoms (H) contained in the lower layer, and alsoillustrating the distribution of atoms (Mc) to control image quality,and/or atoms (CNOc) to control durability, and/or halogen atoms (X),and/or germanium atoms (Ge), and/or tin atoms (Sn), and/or at least onekind of atoms selected from alkali metal atoms, alkaline earth metalatoms, and transition metal atoms, which are optionally contained in thelower layer.

FIGS. 17 to 36 are diagrams illustrating the distribution of atoms (M)to control conductivity, carbon atoms (C), and/or nitrogen atoms (N),and/or oxygen atoms (O), and/or germanium atoms (Ge), and/or tin atoms(Sn), and/or alkali metal atoms, and/or alkaline earth metal atoms,and/or transition metal atoms, which are contained in the upper layer.

FIG. 37 is a schematic diagram illustrating an apparatus to form thelight receiving layer of the light receiving member forelectrophotography by RF glow discharge method according to the presentinvention.

FIG. 38 is an enlarged sectional view of the aluminum support having aV-shape rugged surface which is used to form the light receiving memberfor electrophotography according to the present invention.

FIG. 39 is an enlarged sectional view of the aluminum support having adimpled surface on which is used to form the light receiving member forelectrophotography according to the present invention.

FIG. 40 is a schematic diagram of the depositing apparatus to form thelight receiving layer of the light receiving member forelectrophotography by microwave glow discharge method according to thepresent invention.

FIG. 41 is a schematic diagram of the apparatus to form the lightreceiving layer of the light receiving member for electrophotography bymicrowave glow discharge method according to the present invention.

FIG. 42 is a schematic diagram of the apparatus to form the lightreceiving layer of the light receiving member for electrophotography byRF sputtering method according to the present invention.

FIGS. 43 (a) to 43(d) show the distribution of the content of the atomsacross the layer thickness in Example 349, Comparative Example 8,Example 356, and Example 357, respectively, of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The light receiving member for electrophotography pertaining to thepresent invention will be described in more detail with reference to thedrawings.

FIG. 1 is a schematic diagram showing a typical example of the layerstructure suitable for the light receiving member for electrophotographypertaining to the present invention.

The light receiving member 100 for electrophotography as shown in FIG. 1comprises an aluminum support 101 for use in the light receiving memberfor electrophotography and, disposed thereon, a light receiving layer102 having a layered structure comprising a lower layer 103 constitutedwith AlSiH and having a part in which the above-mentioned aluminum atomsand silicon atoms are unevenly distributed across the layer thicknessand the upper layer 104 constituted with Non-Si(H,X) and containing atleast one of carbon atoms, nitrogen atoms and oxygen atoms in the layerregion in adjacent with the lower layer. The upper layer 104 has a freesurface 105.

Support

The aluminum support 101 used in the present invention is made of analuminum alloy. The aluminum alloy is no specifically limited in basealuminum and alloy components. The kind and composition of thecomponents may be selected as desired. Therefore, the aluminum alloyused in the present invention may be selected from pure aluminum, Al-Cualloy, Al-Mn alloy, Al-Mg alloy, Al-Mg-Si alloy, Al-Zn-Mg alloy,Al-Cu-Mg alloy (duralumin and super duralumin), Al-Cu-Si alloy (lautal),Al-Cu-Ni-Mg alloy (Y-alloy and RR alloy), and aluminum powder sinteredbody (SAP) which are standardized or registered as a malleable material,castable material, or die casting material in the Japanese IndustrialStandards (JIS), AA Standards, BS Standards, DIN Standards, andInternational Alloy Registration.

The composition of the aluminum alloy used in the invention isexemplified in the following. The scope of the invention is notrestricted to the examples.

Pure aluminum conforming to JIS-1100 which is composed of less than 1.0wt % of Si and Fe, 0.05-0.20 wt % of Cu, less than 0.05 wt % of Mn, lessthan 0.10 wt % of Zn, and more than 99.00 wt % of Al.

Al-Cu-Mg alloy conforming to JIS-2017 which is composed of 0.05-0.20 wt% of Si, less than 0.7 wt % of Fe, 3.5-4.5 wt % of Cu, 0.40-1.0 wt % ofMn, 0.40-0.8 wt % of Mg, less than 0.25 wt % of Zn, and less than 0.10wt % of Cr, with the remainder being Al.

Al-Mn alloy conforming to JIS-3003 which is composed of less than 0.6 wt% of Si, less than 0.7 wt % of Fe, 0.05-0.20 wt % of Cu, 1.0-1.5 wt % ofMn, and less than 0.10 wt % of Zn, with the remainder being Al.

Al-Si alloy conforming to JIS-4032 which is composed of 11.0-13.5 wt %of Si, less than 1.0 wt % of Fe, 0.50-1.3 wt % of Cu, 0.8-1.3 wt % ofMg, less than 0.25 wt % of Zn, less than 0.10 wt % of Cr, and 0.5-1.3 wt% of Ni, with the remainder being Al.

Al-Mg alloy conforming to JIS-5086 which is composed of less than 0.40wt % of Si, less than 0.50 wt % of Fe, less than 0.10 wt % of Cu,0.20-0.7 wt % of Mn, 3.5-4.5 wt % of Mg, less than 0.25 wt % of Zn,0.05-0.25 wt % of Cr, and less than 0.15 wt % of Ti, with the remainderbeing Al.

An alloy composed of less than 0.50 wt % of Si, less than 0.25 wt % ofFe, 0.04-0.20 wt % of Cu, 0.01-1.0 wt % of Mn, 0.5-10 wt % of Mg,0.03-0.25 wt % of Zn, 0.05-0.50 wt % of Cr, 0.05-0.20 wt % of Ti or Tr,and less than 1.0 cc of H₂ per 100 g of Al, with the remainder being Al.

Al alloy composed of less than 0.12 wt % of Si, less than 0.15% of Fe,less than 0.30 wt % of Mn, 0.5-5.5 wt % of Mg, 0.01-1.0 wt % of Zn, lessthan 0.20 wt % of Cr, and 0.01-0.25 wt % of Zr, with the remainder beingAl.

Al-Mg-Si alloy conforming to JIS-6063 which is composed of 0.20-0.6 wt %of Si, less than 0.35 wt % of Fe, less than 0.10 wt % of Cu, less than0.10 wt % of Mn, 0.45-0.9 wt % of MgO, less than 0.10 wt % of Zn, lessthan 0.10 wt % of Cr, and less than 0.10 wt % of Ti, with the remainderbeing Al.

Al-Zn-Mg alloy conforming to JIS-7N01 which is composed of less than0.30 wt % of Si, less than 0.35 wt % of Fe, less than 0.20 wt % of Cu,0.20-0.7 wt % of Mn, 1.0-2.0 wt % of Mg, 4.0-5.0 wt % of Zn, less than0.30 wt % of Cr, less than 0.20 wt % of Ti, less than 0.25 wt % of Zr,and less than 0.10 wt % of V, with the remainder being Al.

In this invention, an aluminum alloy of proper composition should beselected in consideration of mechanical strength, corrosion resistance,workability, heat resistance, and dimensional accuracy which arerequired according to specific uses. For example, where precisionworking with mirror finish is required, an aluminum alloy containingmagnesium and/or copper together is desirable because of itsfree-cutting performance.

According to the present invention, the aluminum support 101 can be inthe form of cylinder or flat endless belt with a smooth or irregularsurface. The thickness of the support should be properly determined sothat the light receiving member for electrophotography can be formed asdesired. In the case where the light receiving member forelectrophotography is required to be flexible, it can be made as thin aspossible within limits not harmful to the performance of the support.Usually the thickness should be greater than 10 um for the convenienceof production and handling and for the reason of mechanical strength.

In the case where the image recording is accomplished by the aid ofcoherent light such as laser light, the aluminum support may be providedwith an irregular surface to eliminate defective images caused byinterference fringes.

The irregular surface on the support may be produced by any known methoddisclosed in Japanese Patent Laid-open Nos. 168156/1985, 178457/1985,and 225854/1985.

The support may also be provided with an irregular surface composed of aplurality of spherical dents in order to eliminate defective imagescaused by interference fringes which occur when coherent light such aslaser light is used.

In this case, the surface of the support has irregularities smaller thanthe resolving power required for the light receiving member forelectrophotography, and the irregularities are composed of a pluralityof dents.

The irregularities composed of a plurality of spherical dents can beformed on the surface of the support according to the known methoddisclosed in Japanese Patent Laid-Open No. 231561/1986.

Lower layer

According to the present invention, the lower layer is made of aninorganic material which is composed of at least aluminum atoms (Al),silicon atoms (Si), and hydrogen atoms (H). It may further contain atoms(Mc) to control image quality, atoms (CNOc) to control durability,halogen atoms (X), germanium atoms (Ge), and/or tin atoms (Sn), and atleast one kind of atoms (Me) selected from the group consisting ofalkali metal atoms, and/or alkaline earth metal atoms, and transitionmetal atoms.

The lower layer contains aluminum atoms (Al), silicon atoms, (Si), andhydrogen atoms (H) which are distributed evenly throughout the layer;but it has a part in which their distribution is uneven across the layerthickness. Their distribution should be uniform in a plane parallel tothe surface of the support so that uniform characteristics are ensuredin the same plane.

According to a preferred embodiment, the lower layer contains aluminumatoms (Al), silicon atoms (Si), and hydrogen atoms (H) which aredistributed evenly and continuously throughout the layer, with thealuminum atoms (Al) being distributed such that their concentrationgradually decreases across the layer thickness toward the upper layerfrom the support, with the silicon atoms (Si) and hydrogen atoms (H)being distributed such that their concentration gradually increasesacross the layer thickness toward the upper layer from the support. Thisdistribution of atoms makes the aluminum support and the lower layercompatible with each other and also makes the lower layer and the upperlayer compatible with each other.

In the light receiving member for electrophotography according to thepresent invention, it is desirable that the lower layer containsaluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) whichare specifically distributed across the layer thickness as mentionedabove but are evenly distributed in the plane parallel to the surface ofthe support.

The lower layer may further contain atoms (Mc) to control image quality,atoms (CNOc) to control durability, halogen atoms (X), germanium atoms(Ge), and/or tin atoms (Sn), and at least one kind of atoms (Me)selected from the group consisting of alkali metal atoms, alkaline earthmetal atoms, and transition metal atoms, which are evenly distributedthroughout the entire layer or unevenly distributed across the layerthickness in a specific part. In either case, their distribution shouldbe uniform in a plane parallel to the surface of the support so thatuniform characteristics are ensured in the same plane.

FIGS. 3 to 8 show the typical examples of the distribution of aluminumatoms (Al) and optionally added atoms in the lower layer of the lightreceiving member for electrophotography in the present invention. (Thealuminum atoms (Al) and the optionally added atoms are collectivelyreferred to as "atoms (AM)" hereinafter.)

In FIGS. 3 to 8, the abscissa represents the concentration (C) of atoms(AM) and the ordinate represents the thickness of the lower layer. (Thealuminum atoms (Al) and the optionally added atoms may be the same ordifferent in their distribution across the layer thickness.)

The ordinate represents the thickness of the lower layer, with t_(B)representing the position of the end (adjacent to the support) of thelower layer, with t_(T) representing the position of the end (adjacentto the upper layer) of the lower layer. In other words, the lower layercontaining atoms (AM) is formed from the t_(B) side toward the t_(T)side.

FIG. 3 shows a first typical example of the distribution of atoms (AM)across layer thickness in the lower layer. The distribution shown inFIG. 3 is such that the concentration (C) of atoms (AM) remains constantat C₃₁ between position t_(B) and position t₃₁ and linearly decreasesfrom C₃₁ to C₃₂ between position t₃₁ and position t_(T).

The distribution shown in FIG. 4 is such that the concentration (C) ofatoms (AM) linearly decreases from C₄₁ to C₄₂ between position t_(B) andposition t_(T).

The distribution shown in FIG. 5 is such that the concentration (C) ofatoms (AM) gradually and continuously decreases from C₅₁ to C₅₂ betweenposition t_(B) and position t_(T).

The distribution shown in FIG. 6 is such that the concentration (C) ofatoms (AM) remains constant at C₆₁ between position t_(B) and positiont₆₁ and linearly decreases from C₆₂ to C₆₃ between t₆₁ and positiont_(T)

The distribution shown in FIG. 7 is such that the concentration (C) ofatoms (AM) remains constant at C₇₁ between position t_(B) and positiont₇₁ and decreases gradually and continuously from C₇₂ to C₇₃ betweenposition t₇₁ and position t_(T).

The distribution shown in FIG. 8 is such that the concentration (C) ofatoms (AM) decreases gradually and continuously from C₈₁ to C₈₂ betweenposition t_(B) and position t_(T).

The atoms (AM) in the lower layer are distributed across the layerthickness as shown in FIGS. 3 to 8 with reference to several typicalexamples. In a preferred embodiment, the lower layer contains siliconatoms (Si) and hydrogen atoms (H) and atoms (AM) in a high concentrationof C in the part adjacent to the support, and also contains atoms (AM)in a much lower concentration at the interface t_(T). In such a case,the distribution across the layer thickness should be made such that themaximum concentration Cmax of atoms (Al) is 10 atom % or above,preferably 30 atom % or above, and most desirably 50 atom % or above.

According to the present invention, the amount of atoms (Al) in thelower layer should be properly established so that the object of theinvention is effectively achieved. It is 5-95 atom %, preferably 10-90atom %, and most desirably 20-80 atom %.

FIGS. 9 to 16 shows the typical examples of the distribution of siliconatoms (Si), hydrogen atoms (H), and the above-mentioned optional atomscontained across the layer thickness in the lower layer of the lightreceiving member for electrophotography in the present invention.

In FIGS. 9 to 16, the abscissa represents the concentration (C) ofsilicon atoms (Si), hydrogen atoms (H), and optionally contained atomsand the ordinate represents the thickness of the lower layer will becollectively referred to as "atoms (SHM)" hereinafter.) The siliconatoms (Si), hydrogen atoms (H), and optionally contained atoms may bethe same or different in their distribution across the layer thickness.t_(B) on the ordinate represents the end of the lower layer adjacent tothe support and t_(T) on the ordinate represents the end of the lowerlayer adjacent to the upper layer. In other words, the lower layercontaining atoms (SHM) is formed from the t_(B) side toward the t_(T)side.

FIG. 9 shows a first typical example of the distribution of atoms (SHM)across the layer thickness in the lower layer. The distribution shown inFIG. 9 is such that the concentration (C) of atoms (SHM) linearlyincreases from C₉₁ to C₉₂ between position t_(B) and position t₉₁ andremains constant at C₉₂ between position t₉₁ and position t_(T).

The distribution shown in FIG. 10 is such that the concentration (C) ofatoms (SHM) linearly increases from C₁₀₁ to C₁₀₂ between position t_(B)and position t_(T).

The distribution shown in FIG. 11 is such that the concentration (C) ofatoms (SHM) gradually and continuously increase from C₁₁₁ to C₁₁₂between position t_(B) and position t_(T).

The distribution shown in FIG. 12 is such that the concentration (C) ofatoms (SHM) linearly increases from C₁₂₁ to C₁₂₂ between position t_(B)and position t₁₂₁ and remains constant at C₁₂₃ between position t₁₂₁ andposition t_(T).

The distribution shown in FIG. 13 is such that the concentration (C) ofatoms (SHM) gradually and continuously increases from C₁₃₁ to C₁₃₂between position t_(B) and position t₁₃₁ and remains constant at Cbetween position t₁₃₁ and position t_(T).

The distribution shown in FIG. 14 is such that the concentration (C) ofatoms (SHM) gradually and continuously increases from C₁₄₁ to C₁₄₂between position t_(B) and position t_(T).

The distribution shown in FIG. 15 is such that the concentration (C) ofatoms (SHM) gradually increases from substantially zero to C₁₅₁ positiont_(B) and position t₁₅₁ and remains constant at C₁₅₂ between positiont₁₅₁ and position t_(T). ("Substantially zero" means that the amount islower than the detection limit. The same shall apply hereinafter.)

The distribution shown in FIG. 16 is such that the concentration (C) ofatoms (SHM) gradually increases from substantially zero to C₁₆₁ betweenposition t_(B) and position t_(T).

The silicon atoms (Si) and hydrogen atoms (H) in the lower layer aredistributed across the layer thickness as shown in FIGS. 9 to 16 withreference to several typical examples. In a preferred embodiment, thelower layer contains aluminum atoms (Al) and silicon atoms (Si) andhydrogen atoms (H) in a low concentration of C in the part adjacent tothe support, and also contains silicon atoms (Si) and hydrogen atoms (H)in a much higher concentration at the interface t_(T). In such a case,the distribution across the layer thickness should be made such that themaximum concentration C_(max) of the total of silicon atoms (Si) andhydrogen atoms (H) is 10 atom % or above, preferably 30 atom % or above,and most desirably 50 atom % or above.

According to the present invention, the amount of silicon atoms (Si) inthe lower layer should be properly established so that the object of theinvention is effectively achieved. It is 5-95 atom %, preferably 10-90atom %, and most desirably 20-80 atom %.

According to the present invention, the amount of hydrogen atoms (H) inthe lower layer should be properly established so that the object of theinvention is effectively achieved. It is 0.01-70 atom %, preferably0.1-50 atom %, and most desirably 1-40 atom %.

The above-mentioned atoms (Mc) optionally contained to control imagequality are selected from atoms belonging to Group III of the periodictable, except for aluminum atoms (Al) ("Group III atoms" for shorthereinafter), atoms belonging to Group V of the periodic table, exceptfor nitrogen atoms (N) ("Group V atoms" for short hereinafter), andatoms belonging to Group VI of the periodic table, except for oxygenatoms (O) ("Group VI atoms" for short hereinafter).

Examples of Group III atoms include B (boron), Ga (gallium), In(indium), and Tl (thallium), with B, Al and Ga being preferable.Examples of Group V atoms include P (phosphorus), As (arsenic), Sb(antimony) and Bi (bismuth), with P and As being preferable. Examples ofGroup VI atoms include S (sulfur), Se (selenium), Te (tellurium), and Po(polonium), with S and Se being preferable.

According to the present invention, the lower layer may contain atoms(Mc) to control image quality, which are Group III atoms, Group V atoms,or Group VI atoms. The atoms (Mc) improve the injection of electriccharge across the aluminum support and the upper layer and/or improvethe transferability of electric charge in the lower layer. They alsocontrol conduction type and/or conductivity in the region of the lowerlayer which contains a less amount of aluminum atoms (Al).

In the lower layer, the content of atoms (Mc) to control image qualityshould be 1×10⁻³ -5×10⁴ atom-ppm, preferably 1×10⁻¹ -5×10⁴ atom-ppm, andmost desirably 1×10⁻² -5×10³ atom-ppm

The above-mentioned atoms (NCOc) optionally contained to controldurability are selected from carbon atoms (C), nitrogen atoms (N), andoxygen atoms (O). When contained in the lower layer, carbon atoms (C),and/or nitrogen atoms (N), and/or oxygen atoms (O) as the atoms (CNOc)to control durability contributed to improve the injection of electriccharge across the aluminum support and the upper layer and/or improvethe transferability of electric charge in the lower layer and/or improvethe adhesion of the lower layer to the aluminum support. They alsocontribute to control the width of the forbidden band in the region ofthe lower layer which contains a less amount of aluminum atoms (Al).

In the lower layer, the content of atoms (NCOc) to control durabilityshould be 1×10³ -5×10⁵ atom-ppm, preferably 5×10¹ -4×10⁵ atom-ppm, andmost desirably 1×10² -3×10³ atom-ppm

The above-mentioned halogen atoms (X) optionally contained in the lowerlayer are selected from fluorine atoms (F), chlorine atoms (Cl), bromineatoms (Br), and iodine atoms (I). When contained in the lower layer,fluorine atoms (F), and/or chlorine atoms (Cl), and/or bromine atoms(Br), and/or iodine atoms (I) as the halogen atoms (V) compensate forthe unbonded hands of silicon atoms (Si) and aluminum atoms (Al)contained mainly in the lower layer and make the lower layer stable interms of composition and structure, thereby improving the quality of thelayer.

The content of halogen atoms (X) in the lower layer should be properlyestablished so that the object of the invention is effectively achieved.It is 1-4×10⁵ atom-ppm, preferably 10-3×10⁵ atom-ppm, and most desirably1×10² -2×10⁵ atom-ppm.

According to the present invention, the lower layer may optionallycontain germanium atoms (Ge) and/or tin atoms (Sn). They improve theinjection of electric charge across the aluminum support and the upperlayer and/or improve the transferability of electric charge in the lowerlayer and/or improve the adhesion of the lower layer to the aluminumsupport. They also narrow the width of the forbidden band in the regionof the lower layer which contains a less amount of aluminum atoms (Al).These effects suppress interference which occurs when a light of longwavelength such as semiconductor laser is used as the light source forimage exposure in the electrophotographic apparatus.

The content of germanium atoms (Ge) and/or tin atoms (Sn) in the lowerlayer should be properly established so that the object of the inventionis effectively achieved. It is 1-9×10⁵ atom-ppm, preferably 1×10 ²-8×10⁵ atom-ppm, and most desirably 5×10² -7×10⁵ atom-ppm

According to the present invention, the lower layer may optionallycontain, as the alkali metal atoms and/or alkaline earth metal atomsand/or transition metal atoms, magnesium atoms (Mg) and/or copper atoms(Cu) and/or sodium atoms (Na) and/or yttrium atoms (Y) and/or manganeseatoms (Mn) and/or zinc atoms (Zn). They disperse hydrogen atoms (H) andhalogen atoms (X) uniformly in the lower layer and prevent the cohesionof hydrogen which is considered to cause cracking and peeling. They alsoimprove the injection of electric charge across the aluminum support andthe upper layer and/or improve the transferability of electric charge inthe lower layer and/or improve the adhesion of the lower layer to thealuminum support.

The content of the above-mentioned metals in the lower layer should beproperly established so that the object of the invention is effectivelyachieved. It is 1-2×10⁵ atom-ppm, preferably 1×10² -1×10⁵ atom-ppm, andmost desirably 5×10² -5×10⁴ atom-ppm.

According to the present invention, the lower layer composed of AlSiH isformed by the vacuum deposition film forming method, as in the upperlayer which will be mentioned later, under proper conditions for thedesired characteristic properties. The thin film is formed by one of thefollowing various methods. Glow discharge method (including ac currentdischarge CVD, e.g., low-frequency CVD, high-frequency CVD, andmicrowave CVD, and dc current CVD), ECR-CVD method, sputtering method,vacuum metallizing method, ion plating method, light CVD method, "HRCVD"method (explained below), "FOCVD" method (explained below). (Accordingto HRCVD method, an active substance (A) formed by the decomposition ofa raw material gas and the other active substance (B) formed from asubstance reactive to the first active substance are caused to reactwith each other in a space where the film formation is accomplished.According to FOCVD method, a raw material gas and a halogen-derived gascapable of oxidizing said raw material gas are caused to react in aspace where the film formation is accomplished.) A proper method shouldbe selected according to the manufacturing conditions, the capitalavailable, the production scale, and the characteristic propertiesrequired for the light receiving member for electrophotography.Preferable among these methods are glow discharge method, sputteringmethod, ion plating method, HRCVD method, and FOCVD method on account oftheir ability to control the production conditions and to introducealuminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) withease. These methods may be used in combination with one another in thesame apparatus.

The glow discharge method may be performed in the following manner toform the lower layer of AlSiH. The raw material gases are introducedinto an evacuatable deposition chamber, and glow discharge is performed,with the gases being introduced at a desired pressure, so that a layerof AlSiH is formed as required on the surface of the support placed inthe chamber. The raw material gases may contain a gas to supply aluminumatoms (Al), a gas to supply silicon atoms (Si), a gas to supply hydrogenatoms (H), an optional gas to supply atoms (Mc) to control imagequality, an optional gas to supply atoms (CNOx) to control durability,an optional gas to supply halogen atoms (X), an optional gas to supplyatoms (GSc), germanium atoms (Ge) and tin atoms (Sn), and an optionalgas to supply atoms (Me) (at least one kind of alkali metal atoms,alkaline earth metal atoms, and transition metal atoms).

The HRCVD may be performed in the following manner to form the lowerlayer of AlSiH. The raw material gases are introduced all together orindividually into an evacuatable deposition chamber, and glow dischargeis performed or the gases are heated, with the gases being introduced ata desired pressure, during which a first active substance (A) is formedand a second active substance (B) is introduced into the depositionchamber, so that a layer of AlSiH is formed as required on the surfaceof the support placed in the chamber. The raw material gases may containa gas to supply aluminum atoms, (Al), a gas to supply silicon atoms(Si), an optional gas to supply atoms (Mc) to control image quality, anoptional gas to supply atoms (CNOc) to control durability, an optionalgas to supply halogen atoms (X), an optional gas to supply atoms (GSc)(germanium atoms (Ge) and tin atoms (Sn)), and an optional gas to supplyatoms (Me) (at least one kind of alkali metal atoms, alkaline earthmetal atoms, and transition metal atoms). A second active substance (B)is formed by introducing a gas to supply hydrogen into the activationchamber. Said first active substance (A) and said second activesubstance are individually introduced into the deposition chamber.

The FOCVD method may be performed in the following manner to form thelower layer of AlSiH. The raw material gases are introduced into anevacuatable deposition chamber, and chemical reactions are performed,with the gases being introduced at a desired pressure, so that a layerof AlSiH is formed as required on the surface of the support placed inthe chamber. The raw material gases may contain a gas to supply aluminumatoms (Al), a gas to supply silicon atoms (Si), a gas to supply hydrogenatoms (H), an optional gas to supply atoms (Mc) to control imagequality, an optional gas to supply atoms (CNOc) to control durability,an optional gas to supply halogen atoms (X), an optional gas to supplyatoms (GSc) (germanium atoms (Ge) and tin atoms (Sn)), and an optionalgas to supply atoms (Me) (at least one kind of alkali metal atoms,alkaline earth metal atoms, and transition metal atoms). They may beintroduced into the chamber altogether or individually, and a halogen(X) gas is introduced into the chamber separately from said rawmaterials gas, and these gases are subjected to chemical reaction in thedeposition chamber.

The sputtering method may be performed in the following manner to formthe lower layer of AlSiH. The raw material gases are introduced into asputtering deposition chamber, and a desired gas plasma environment isformed using an aluminum target and an Si target in an inert gas of Aror He or an Ar- or He-containing gas. The raw material gases may containa gas to supply hydrogen atoms (H), an optional gas to supply atoms (Mc)to control image quality, an optional gas to supply atoms (CNOc) tocontrol durability, an optional gas to supply halogen atoms (X), anoptional gas to supply atoms (GSc) (Germanium atoms (Ge) and tin atoms(Sn)), and an optional gas to supply atoms (Me) (at least one kind ofalkali metal atoms, alkaline earth metal atoms, and transition metalatoms). If necessary, a gas to supply aluminum atoms (Al) and/or tosupply silicon atoms (Si) are introduced into the sputtering chamber.

The ion plating method may be performed in the same manner as thesputtering method, except that vapors of aluminum and silicon are passedthrough the gas plasma environment. The vapors of aluminum and siliconare produced from aluminum and silicon polycrystal or single crystalplaced in a boat which is heated by resistance or electron beams (EBmethod).

According to the present invention, the lower layer contains aluminumatoms (Al), silicon atoms (Si), hydrogen atoms (H), optional atoms (Mc)to control image quality, optional atoms (CNOc) to control durability,optional halogen atoms (X), optional germanium atoms (Ge), optional tinatoms (Sn), optional alkali metal atoms, optional alkaline earth metalatoms, and optional transition metal atoms (collectively referred to asatoms (ASH) hereinafter), which are distributed in differentconcentrations across the layer thickness. The lower layer having such adepth profile can be formed by controlling the flow rate of the feed gasto supply atoms (ASH) according to the desired rate of change inconcentration. The flow rate may be changed by operating the needlevalve in the gas passage manually or by means of a motor, or it may bechanged by any of customary means such as by properly adjusting the massflow controller manually or by means of a programmable controlapparatus.

In the case where the sputtering method is used, the lower layer havingsuch a depth profile can be formed, as in the glow discharge method, itcan be achieved by controlling the flow rate of the gaseous raw materialto supply atoms (ASH) according to the desired rate of change inconcentration and introducing the gas into the deposition chamber.Alternatively, it is possible to use a sputtering target comprising aAl-Si mixture in which the mixing ratio of Al and Si is properly changedin the direction of layer thickness of the target.

According to the present invention, the gas to supply Al includes, forexample, AlCl₃, AlBr₃, All₃, Al(CH₃)₂ Cl, Al(CH₃)₃, Al(OCH₃)₃, Al(C₂H₅)₃, Al(OC₂ H₅)₃, Al(i-C₄ H₉)₃, Al(i-C₃ H₇)₃, A(C₃ H₇)₃ and (Al(OC₄H₉)₃. These gases to supply Al may be diluted with an inert gas such asH₂, He, Ar and Ne, if necessary.

According to the present invention, the gas to supply Si includes, forexample, gaseous or gasifiable silicohydrides (silanes) such as Si₂,SiH₂ H₆, Si₃ H₈ and Si₄ H₁₀. SiH₄ and Si₂ H₆ are preferable from thestandpoint of each of handling and the efficient supply of Si. Thesegases to supply Si may be diluted with an inert gas such as H₂, He, Arand Ne, if necessary.

According to the present invention, the gas to supply H includes, forexample, silicohydrides (silanes) such as SiH₄, Si₂ H₆, Si₃ H₈ and Si₄H₁₀.

The amount of hydrogen atoms contained in the lower layer may becontrolled by regulating the flow rate of the feed gas to supplyhydrogen and/or regulating the temperature of the support and/orregulating the electric power for discharge.

The lower layer may contain atoms (Mc) to control image quality, such asGroup III atoms, Group V atoms and Group VI atoms. This is accomplishedby introducing into the deposition chamber the raw materials to form thelower layer together with a raw material to introduce Group III atoms, araw material to introduce Group V atoms, or a raw material to introduceGroup VI atoms. The raw material to introduce Group III atoms, the rawmaterial to introduce Group V atoms, or the raw material to introduceGroup VI atoms may desirably be gaseous at normal temperature and undernormal pressure or gasifiable under the layer forming conditions. Theraw material to introduce Group III atoms, especially boron atoms,include, for example, boron, hydrides such as B₂ H₆, B₅ H₉, B₅ H₁₁, B₆H₁₀, B₆ H₁₂ and B₆ H₁₄, and boron halides such as BF₃, BCl₃ and BBr₃.Additional examples includes GaCl₃, Ga(CH₃)₃, InCl₃ and TiCl₃.

The raw material to introduce Group V atoms, especially phosphorusatoms, include, for example, phosphorus hydrides such as PH₃, P₂ H₄ andphosphorus halides such as PH₄ I, PF₃, PF₃, PCl₃, PBr₃, PBr₅ and PI₃.Other examples effective to introduce Group V atoms include AsH₃, AsF₃,AsCl₃, AsBr₃, AsF₅, SbH₃, SbF₃, SbF₅, SbCl₃, SbCl₅, BiH₃, BiCl₃ andBiBr₃.

The raw material to introduce Group VI atoms includes, for example,gaseous or gasifiable substances such as H₂, SF₄, SF₆, SO₂, SO₂ F₂, COS,CS₂, CH₃ SH, C₂ H₅ SH, C₄ H₄ S, (CH₃)₂ S and S(C₂ H₅)₂ S. Other examplesinclude gaseous of gasifiable substances such as SeH₂, SeF₆, (CH₃)₂)Se,(C₂ H₅)₂ Se. TeH₂, TeF₆, (CH₃)₂ Te and (C₂ H₅)₂ Te.

These raw materials to introduce atoms (Mc) to control image quality maybe diluted with an inert gas such as H₂, He, Ar and Ne.

According to the present invention, the lower layer may contain atoms(CNOc) to control durability, e.g., carbon atoms (C), nitrogen atom (N),and oxygen atoms (O). This is accomplished by introducing into thedeposition chamber the raw materials to form the lower layer, togetherwith a raw material to introduce carbon atoms (C), or a raw material tointroduce nitrogen atoms (N), or a raw material to introduce oxygenatoms (O). Raw materials to introduce carbon atoms (C), nitrogen atoms(N), or oxygen atoms (O) may desirably be in the gaseous form at normaltemperature and under normal pressure or may be readily gasifiable underthe layer forming conditions.

A raw material gas to introduce carbon atoms (C) includes those composedof C and H atoms such as saturated hydrocarbons having 1 to 4 carbonatoms, ethylene, series hydrocarbons having 2 to 4 carbon atoms andacetylene series hydrocarbons having 2 to 3 carbon atoms.

Examples of the saturated hydrocarbons include specifically methane(CH₄), ethane (C₂ H₆), propane (C₃ H₈). n-butane (n-C₄ H₁₀) and pentane(C₅ H₁₂). Examples of the ethylene series hydrocarbons include ethylene(C₂ H₄), propylene ), butene-1 (C₄ H₈), butene-2 (C₄ H₈), isobutylene(C₄ H₈) and pentene (C₅ H₁₀). Examples of acetylene series hydrocarboninclude acetylene ), methylacetylene (C₃ H₄) and butyne (C₄ H₆).

The raw material gas composed of Si, C, and H includes alkyl silicidessuch as Si(CH₃)₄ and Si(C₂ H₅)₄.

Additional examples include gases of halogenated hydrocarbons such as ofCF₄, CCl₄ and CH₃ CF₃, which introduce carbon atoms (C) as well ashalogen atoms (X).

Examples of the raw material gas to introduce nitrogen atoms (N) includenitrogen and gaseous or gasifiable nitrogen compounds (e.g., nitridesand azides) which are composed of nitrogen and hydrogen, such as ammonia(NH₃), hydrazine (H₂ NNH₂), hydrogen azide (HN₃), and ammonium azide(NH₄ N₃).

Additional examples include halogenated nitrogen compounds such asnitrogen trifluoride (F₃ N) and nitrogen tetrafluoride (F₄ N₂), whichcan introduce nitrogen atoms as well as halogen atoms (X).

Examples of the raw material gas to introduce oxygen atoms (O) includeoxygen (O₂), ozone (O₃), nitrogen monoxide (NO), nitrogen dioxide (NO₂),trinitrogen tetraoxide (N₃ O₄), dinitrogen pentaoxide (N₂ O₅) andnitrogen trioxide (NO₃), as well as lower siloxanes such as disiloxane(H₃ SiOSiH₃) and trisiloxane (H₃ SiOSiH₂ OSiH₃) which are composed ofsilicon atoms (Si), oxygen atoms (O) and hydrogen atoms (H).

Examples of the gas to supply hydrogen atoms include halogen gases andgaseous or gasifiable halides, interhalogen compounds, andhalogen-substituted silane derivatives. Additional examples includegaseous or gasifiable halogen-containing silicohydrides composed ofsilicon atoms and halogen atoms.

The halogen compounds that can be suitably used in the present inventioninclude halogen gases such as fluorine, chlorine, bromine and iodine;and interhalogen compounds such as BrF, ClF, ClF₃, BrF₅, BrF₃, IF₃, IF₇,ICl and IBr.

Examples of the halogen-containing silicon compounds orhalogen-substituted silane compounds, include specifically silane (SiH₄)and halogenated silicon such as Si₂ F SiCl₄ and SiBr₄.

In the case where the halogen-containing silicon compounds is used toform the light receiving member for electrophotography by the glowdischarge method or HRCVD method, it is possible to form the lower layercomposed of AlSiH containing halogen atoms on the support without usinga silicohydride gas to supply silicon atoms.

In the case where the lower layer containing halogen atoms is formed bythe glow discharge method of HRCVD method a silicon halide gas is usedas the gas to supply silicon atoms. The silicon halide gas may be mixedwith hydrogen or a hydrogen-containing silicon compound gas tofacilitate the introduction of hydrogen atoms at a desired level.

The above-mentioned gases may be used individually or in combinationwith one another at a desired mixing ratio.

The raw materials to form the lower layer which are used in addition tothe above-mentioned halogen compounds or halogen-containing siliconcompounds include gaseous or gasifiable hydrogen halides such as HF,HCl, HBr and HI; and halogen-substituted silicohydrides such as SiH₃ F₂,SiH₂ F₂, SiHF₃, SiH₂ I₂, SiS₂ Cl₂, SiHCl₃, SiH₂ Br₂ and SiHBr₃. Amongthese substances, the hydrogen-containing halides are a preferredhalogen-supply gas because they supply the lower layer with halogenatoms as well as hydrogen atoms which are very effective for the controlof electric or photoelectric characteristics.

The introduction of hydrogen atoms into the lower layer may also beaccomplished in another method by inducing discharge in the depositionchamber containing a silicohydride such as SiH₄, Si₂ H₆, Si₃ H₈ and Si₄H₁₀ and a silicon compound to supply silicon atoms (Si).

The amount of hydrogen atoms (H) and/or halogen atoms (X) to beintroduced into the lower layer may be controlled by regulating thetemperature of the support, the electric power for discharge, and theamount of raw materials for hydrogen atoms and halogen atoms to beintroduced into the deposition chamber.

The lower layer may contain germanium atoms (Ge) or tin atoms (Sn). Thisis accomplished by introducing into the deposition chamber the rawmaterials to form the lower layer together with a raw material tointroduce germanium atoms (Ge) or tin atoms (Sn) in a gaseous form. Theraw material to supply germanium atoms (Ge) or the raw material tosupply tin atoms (Sn) may be gaseous at normal temperature and undernormal pressure or gasifiable under the layer forming conditions.

The substance that can be used as a gas to supply germanium atoms (Ge)include gaseous or gasifiable germanium hydrides such as GeH₄, Ge₂ H₆,Ge₃ H₈ and Ge₄ H₁₀ Among them, GeH₄, Ge₂ H₆ and Ge₃ H₈ are preferablefrom the standpoint of easy handling at the time of layer forming andthe efficient supply of germanium atoms (Ge).

Other effective raw materials to form the lower layer include gaseous orgasifiable germanium hydride-halides such as GeHF₃, GeH₂ F₂, GeH₃ F,GeHCl₃, GeH₂ Cl₂, GeH₃ Cl, GeHBr₃, GeH₂ Br₂. GeH₃ Br, GeHI₃, GeH₂ I₂ andGeH₃ I and germanium halides such as GeF₄, GeCl₄, GeBr₄, GeI₄, GeF₂,GeCl₂, GeBr₂ and GeI₂.

The substance that can be used as a gas to supply tin atoms (Sn) includegaseous or gasifiable tin hydrides such as SnH₄, Sn₂ H₆, Sn₃ H₈ and Sn₄H₁₀. Among them, SnH₄, Sn₂ H₆ and Sn₃ H₈ are preferable from thestandpoint of easy handling at the time of layer forming and theefficient supply of tin atoms (Sn).

Other effective raw materials to form the lower layer include gaseous orgasifiable tin hydride-halides such as SnHF₃, SnH₂ F₂, SnH₃ F, SnHCl₃,SnH₂ Cl₂, SnH₃ Cl, SnHBr₃, SnH₂ Br₂, SnH₃ Br, SnHI₃, SnH₂ I₂ and SnH₃ I,and tin halides such as SnF₄, SnCl₄, SnBr₄, SnI₄, SnF₂, SnCl₂, SnBr₂ andSnI₂.

The gas to supply GSc may be diluted with an inert gas such as H₂, He,Ar and Ne, is necessary.

The lower layer may contain magnesium atoms (Mg). This is accomplishedby introducing into the deposition chamber the raw materials to form thelower layer together with a raw material to introduce magnesium atoms(Mg) in a gaseous form. The raw material to supply magnesium atoms (Mg)may be gaseous at normal temperature and under normal pressure orgasifiable under the layer forming conditions.

The substance that can be used as a gas to supply magnesium atoms (Mg)include organometallic compounds containing magnesium atoms (Mg).Bis(cyclopentadienyl)magnesium (II) complex salt (Mg(C₅ H₅)₂) ispreferable from the standpoint of easy handling at the time of layerforming and the efficient supply of magnesium atoms (Mg).

The gas to supply magnesium atoms (Mg) may be diluted with an inert gassuch as H₂, He, Ar and Ne, if necessary.

The lower layer may contain copper atoms (Cu). This is accomplished byintroducing into the deposition chamber the raw materials to form thelower layer together with a raw material to introduce copper atoms (Cu)in a gaseous form. The raw material to supply copper atoms(Cu) may begaseous at normal temperature and under normal pressure or gasifiableunder the layer forming conditions.

The substance that can be used as a gas to supply copper atoms (Cu)include organometallic compounds containing copper atoms (Cu). Copper(II) bisdimethylglyoximate Cu(C₄ H₇ N₂ O₂)₂ is preferable from thestandpoint of easy handling at the time of layer forming and theefficient supply of Cu atoms.

The gas to supply copper atoms (Cu) may be diluted with an inert gassuch as H₂, He, Ar and Ne, if necessary.

The lower layer may contain sodium atoms (Na) or yttrium atoms (Y) ormanganese atoms (Mn), zinc atoms (Zn), etc. This is accomplished byintroducing into the deposition chamber the raw materials to form thelower layer together with a raw material to introduce sodium atoms (Na)or yttrium (Y) or manganese atoms (Mn) or zinc atoms (Zn). The rawmaterial to supply sodium atoms (Na) or yttrium atoms (Y) or mangnaeseatoms (Mn) or zinc atoms (Zn) may be gaseous at normal temperature andunder normal. pressure or gasifiable under the layer forming conditions.

The substance that can be used as a gas to supply sodium atoms (Na)includes sodium amine (NaNH₂) and organometallic compounds containingsodium atoms (Na). among them, sodium amine (NaNH₂) is preferable fromthe standpoint of easy handling at the time of layer forming and theefficient supply of sodium atoms (Na).

The substance that can be used as a gas to supply yttrium atoms (Y)includes organometallic compounds containing yttrium atoms (Y).Triisopropanol yttrium Y(Oi-C₃ H₇)₃ is preferable from the standpoint ofeasy handling at the time of layer forming and the efficient supply ofyttrium atoms (Y).

The substance that can be used as a gas to supply manganese atoms (Mn)includes organometallic compounds containing manganese atoms (Mn).Monomethylpentacarbonylmanganese Mn(CH₃)(CO)₅, is preferable from thestandpoint of easy handling at the time of layer forming and theefficient supply of sodium atoms (Na).

The substance that can be used as a gas to supply zinc atoms (Zn)includes organometallic compounds containing zinc atoms (Zn). Diethylzinc Zn(C₂ H₅)₂ is preferable from the standpoint of easy handling atthe time of layer forming and the efficient supply of zinc atoms (Zn).

The gas to supply sodium atoms (Na) or yttrium atoms (Y) or manganeseatoms (Mn) or zinc atoms (Zn) may be diluted with an inert gas such asH₂, He, Ar and Ne, if necessary.

According to the present invention, the lower layer should have athickness of 0.03-5 um, preferably, 0.01-1 um, and most desirable0.05-0.5 um, from the standpoint of the desired electrophotographiccharacteristics and economic effects.

According to the present invention, the lower layer has an interfaceregion which is in contact with the aluminum support and contains lessthan 95% of the aluminum atoms contained in the aluminum support. If theinterface region contains more than 95% of the aluminum atoms containedin the aluminum support, it merely functions as the support. The lowerlayer also has an interface which is in contact with the upper layer andcontains more than 5% of the aluminum atoms contained in the lowerlayer. If the interface region contains less than 5% of the aluminumatoms contained in the lower layer, if merely functions as the upperlayer.

In order to form the lower layer of AlSiH which ha the characteristicproperties to achieve the object of the present invention, it isnecessary to properly establish the gas pressure in the depositionchamber nd the temperature of the support.

The gas pressure in the deposition chamber should be properly selectedaccording to the desired layer. It is usually 1×10⁻⁵ -10 Torr,preferably 1×10⁻⁴ -3 Torr, and most desirably 1×10⁻⁴ -1 Torr.

The temperature (Ts) of the support should be properly selectedaccording to the desired layer. It is usually 50°-600° C., andpreferably 100°-400° C.

In order to form the lower layer of AlSiH by the glow discharge methodaccording to the present invention, it is necessary to properlyestablish the discharge electric power to be supplied to the depositionchamber according to the desired layer. It is usually 5×10⁻⁵ -10 W/cm³,preferably 5×10⁻⁴ -5 W/cm³ and most desirably 1×10⁻³ -1 to 2×10⁻³ W/cm³.

The gas pressure of the deposition chamber, the temperature of thesupport, and the discharge electric power to be supplied to thedeposition chamber mentioned above should be establishedinterdependently to that the lower layer having the desiredcharacteristic properties can be formed.

Upper layer

The upper layer in this invention is composed of a Non-Si (H, X) and hasdesired photoconductivity.

The upper layer of this invention contains, in at least the layer regionadjacent with the lower layer, carbon atoms (C), and/or nitrogen atoms(N), and/or oxygen atoms (O), and optional atoms (M) to controlconductivity but contains no substantial germanium atoms (Ge) and tinatoms (Sn). However, the upper layer may contain in other layer regionsat least one of the atoms (M) to control the conductivity, carbon atoms(C), nitrogen atoms (N), oxygen atoms (O), germanium atoms (Ge) and tinatoms (Sn). Particularly, in the layer region of the upper layer nearthe free surface, at least one of carbon atoms (C), nitrogen atoms (N)and oxygen atoms (O) is preferably contained.

The upper layer may contain in the layer region of the upper layer atleast adjacent with the lower layer carbon atoms (C), and/or nitrogenatoms (N), and/or oxygen atoms (O) and optional atoms (M) to control theconductivity, which are distributed evenly throughout the layer regionor distributed evenly throughout the layer region but may be containeduneven distribution across the layer thickness in a part. However, ineither of the cases, their distribution should be uniform in a planeparallel to the surface of the support so that uniform characteristicsare ensured in the same plane.

In a case where the upper layer contains in other layer regions than thelayer region at least in adjacent with the lower layer contains at leastone of atoms (M) to control the conductivity, carbon atoms (C), nitrogenatoms (N), oxygen atoms (O), germanium atoms (Ge) and tin atoms (Sn),the atoms (M) to control the conductivity, carbon atoms (C), nitrogenatoms (N), oxygen atoms (O), germanium (Ge), tin atoms (Sn) may bedistributed uniformly in the layer region, or they may be contained in aportion uniformly distributed in the layer region but not unevenlydistributed across the layer thickness.

However, in either of the cases, their distribution should be uniform ina plane parallel to the surface of the support so that uniformcharacteristics are ensured in the same plane.

According to the present invention, the upper layer may contain at leastone of alkali metals, alkaline earth metal and transition metals. Theatoms are incorporated in the entire layer region or a partial layerregion of the upper layer, and they may be uniformly distributedthroughout the region, or distributed evenly through the layer regionbut may contained unevenly distributed across the layer thickness.

However, they should be incorporated uniformly in either of the cases ina plane parallel to the surface of the support so that uniformcharacteristics are ensured in the same plane.

A layer region (hereinafter simply referred to as "layer region (M)")containing atoms (M) to control the conductivity (hereinafter simplyreferred to as "atoms (M)") and a layer region of the upper layer atleast in adjacent with the lower layer (hereinafter simply referred toas "layer region (CNO_(B))") containing carbon atoms (C), and/ornitrogen atoms (N), and/or oxygen atoms (O) (hereinafter simply referredto as "atoms (CNO)") may be a substantially identical layer region ormay have in common a portion at least on the side of the surface of thelayer region (CNO_(B)), or may be contained within the layer region(CNO_(B)).

Further, the layer region (hereinafter simply referred to as "layerregion (GS)") containing germanium atoms (Ge) and/or tin atoms (Sn)(hereinafter simply referred to as "atoms (GS)") may contain a portionon the surface of the layer region (CNO_(B)).

Further, the layer region containing atoms (CNO) other than the layerregion (CNO_(B)) (hereinafter simply referred to as "layer region(CNO_(T))" and the layer region (CNO_(B)) and the layer region (CNO_(T))being collectively referred as "layer region (CNO)"), the layer region(M), the layer region (GS) and the layer region (NYMZ) containing atleast one of alkali metals, alkaline earth metals and transition metalsmay be substantially an identical layer region, may have in common atleast a portion for the respective layer regions, or may have in commonsubstantially the respective layer regions.

FIGS. 17 to 36 show the typical examples of the profile of atoms (M)across the layer thickness in the layer region (M), a typical example ofthe profile of atoms (CNO) in the layer region (CNO) across the layerthickness, a typical example of the profile of the atoms (GS) containedthe layer region (GS) across the layer thickness, and a typical exampleof the profile of alkali metal atoms, alkaline earth metal atoms ortransition metal atoms contained in the layer region incorporating atleast one of alkali metal atoms, alkaline earth metal atoms andtransition metal atoms across the layer thickness in the upper layer ofthe light receiving member for use in electrophotography in thisinvention (hereinafter the layer regions are collectively referred to as"layer region (Y)" and these atoms are collectively referred to as"atoms (Y)").

Accordingly, FIGS. 17 to 36 show the typical examples of the profiles ofthe atoms (Y) contained in the layer region (Y) across the layerthickness, in which one layer region (Y) is contained in the upper layerin a case where the layer region (M), layer region (CNO), layer region(GS), a layer region containing at least one of alkali metal, alkalineearth metal and transition metal are substantially the identical layerregion, or a plurality of the layer regions (Y) are contained in theupper layer if they are not substantially identical layer region.

In FIGS. 17 to 36, the abscissa represents the distributionconcentration C of the atoms (Y) and ordinate represents the thicknessof the layer region (Y), while t_(B) represents the position of the endof the layer region (Y) on the side of the lower layer and t_(T)represents the position of the end of the layer region (Y) on the sideof the free surface. That is, the layer region (Y) containing the atoms(Y) is formed from the side t_(B) to the side t_(T).

FIG. 17 shows a first typical example of the profile of atoms (Y)contained in the layer region (Y) across the layer thickness.

In the example shown in FIG. 17, the atoms (Y) contained is distributedsuch that the concentration increases gradually and continuously fromC₁₇₁ to C₁₇₂ from the position t_(B) to the position t_(T).

In the example shown in FIG. 18, the atoms (Y) contained is distributedsuch that the concentration C linearly increases from C₁₈₁ to C₁₈₂ fromthe position t_(B) to the position t₁₈₁ and takes a constant value ofC₁₈₃ from the position t₁₈₁ to the position t_(T).

In the example shown in FIG. 19, the atoms (Y) contained is distributedsuch that the concentration C takes a constant value of C₁₉₁ from theposition t_(B) to the position t₁₉₁, gradually and continuouslyincreases from C₁₉₁ to C₁₉₂ from the position t₁₉₁ to the position t₁₉₂and then takes a constant value of concentration t₁₉₃ from the positiont₁₉₂ to the position t_(T).

In the example shown in FIG. 20, the atoms (Y) contained is distributedsuch that the concentration C takes a constant value of C₂₀₁ from theposition t_(B) to the position t₂₀₁, takes a constant value C₂₀₂ fromthe position t₂₀₁ to the position t₂₀₂ and takes a constant value C₂₀₃from the position t₂₀₂ to the position t_(T).

In the example shown in FIG. 21, the atoms (Y) contained is distributedsuch that the concentration C takes a constant value of the C₂₁₁ fromthe position t_(B) to the position t_(T).

In the example shown in FIG. 22, the atoms (Y) contained is distributedsuch that the concentration C takes a constant value C₂₂₁ from theposition t_(B) to the position t₂₂₁, decreases gradually andcontinuously from C₂₂₂ to C₂₂₃ from the position t₂₂₁ to the positiont_(T).

In the example shown in FIG. 23, the atoms (Y) contained is distributedsuch that the concentration C gradually and continuously decreases fromC₂₃₁ to the C₂₃₂ from the position t_(B) to the position t_(T).

In the example shown in FIG. 24 the atoms (Y) contained is distributedsuch that the distribution C takes a constant value C₂₄₁ from theposition t_(B) to the position t₂₄₁, gradually and continuouslydecreases from the C₄₄₂ to the concentration substantialy equal to zerofrom the position t₂₄₁ to the position t_(T) (substantially zero meanshere and hereinafter the concentration lower than the detectable limit).

In the example shown in FIG. 25, the atoms (Y) contained is distributedsuch that the concentration C gradually and continuously decreases fromC₂₅₁ to substantially equal to zero from the position t_(B) to theposition t_(T).

In the example shown in FIG. 26, the atoms (Y) contained is distributedsuch that the concentration C remains constant at C₂₆₁ from the positiont_(B) to the position t₂₆₂, lineary decreases to C₂₆₂ from the positiont₂₆₁ to the position t_(T) and remains at C₂₆₂ at the position t_(T).

In the example shown in FIG. 27, the atoms (Y) contained is distributedsuch that the concentration C linearly decreases from C₂₇₁ tosubstantially equal to zero from the position t_(B) to the positiont_(T).

In the example shown in FIG. 28, the atoms (Y) contained is distributedsuch that the concentration C remaining constant at C₂₈₁ from theposition t_(B) to the position t₂₈₁ and linearly decreases from C₂₈₁ toC₂₈₂ from the position t₂₈₂ to the position t_(T).

In the example shown in FIG. 29, the atoms (Y) contained is distributedsuch that the concentration C gradually and continuously decreases fromC₂₉₁ to C₂₉₂ from the position t_(B) to the position t_(T).

In the example shown in FIG. 30, the atoms (Y) contained is distributedsuch that the concentration C remains at a constant value C₃₀₁ from theposition t_(B) to the position t₃₀₁, linearly decreases from C₃₀₂ toC₃₀₃ from the position t₃₀₁ to the position t_(T).

In the example shown in FIG. 31, the atoms (Y) contained is distributedsuch that the concentration C gradually and continuously increases fromC₃₁₁ to C₃₁₂ from the position _(B) to the position t₃₁₁ and remains ata constant value C₃₁₃ from the position t₃₁₁ to the position t_(T).

In the example shown in FIG. 32, the atoms (Y) contained is distributedsuch that the concentration C gradually and continuously increases fromC₃₂₁ to C₃₂₂ from the position t_(B) to the position t_(T).

In the example shown in FIG. 33, the atoms (Y) contained is distributedsuch that the concentration C gradually and continuously increases fromsubstantially zero to C₃₃₁ from the position t_(B) to the position t₃₃₁and remains constant at C₃₃₂ between position t₃₃₁ and position t_(T).

In the example shown in FIG. 34, the atoms (Y) contained is distributedsuch that the concentration C gradually and continuously increases fromsubstantially zero to C₃₄₁ from the position t_(B) to the positiont_(T).

In the example shown in FIG. 35, the atoms (Y) contained is distributedsuch that the concentration C linearly increases from C₃₅₁ to C₃₅₂ fromthe position t_(B) to the position t₃₅₁, and remains constant at C₃₅₂from the position t₃₅₁ to the position t_(T).

In the example shown in FIG. 36, the atoms (Y) contained is distributedsuch that the concentration C linearly increases from C₃₆₁ to C₃₆₂ fromthe position t_(B) to the position t_(T).

The atoms (M) to control the conductivity can include so-calledimpurities in the field of the semiconductor, and those used in thisinvention include atoms belonging to the group III of the periodicaltable giving p type conduction (hereinafter simply referred to as "groupIII atoms"), or atoms belonging to the group V of the periodical tableexcept for nitrogen atoms (N) giving n-type conduction (hereinaftersimply referred to as "group V atoms") and atoms belonging to the groupVI of the periodical table except oxygen atoms (O) (hereinafter simplyreferred to as "group VI atoms").

Examples of the group III atoms can include B (boron), Al (aluminum), Ga(gallium), In (indium), Tl (thallium), etc., B, Al, Ga beingparticularly preferred. Examples of the group V atoms can include,specifically, P (phosphorus), As (arsenic), Sb (antimony), Bi (bismuth),P, As being particularly preferred. Examples of the group VI atoms caninclude, specifically, S (sulfur), Se (selenium), Te (tellurium) and Po(polonium), S and Se being particularly preferred. Incorporation ofgroup III atoms, group V atoms or group VI atoms as the atoms (M) tocontrol the conductivity into the layer region (M) in the presentinvention, can provide the effect, mainly, of controlling the conductiontype and/or conductivity, and/or the effect of improving the chargeinjection between the layer region (M) and the layer region of the upperregion other the layer region (M).

In the layer region (M), the content of atoms (M) to control theconductivity is preferably 1×10⁻³ -5×10⁴ atom-ppm, more preferably,1×10⁻² -1×10⁴ atom-ppm and, most preferably, 1×10⁻¹ -5×10³ atom-ppm.Particularly, in a case where the layer region (M) contains carbon atoms(C), and/or nitrogen atoms (N), and/or oxygen atoms (O) described laterby 1×10³ atom-ppm, the layer region (M) contains atoms (M) to controlthe conductivity preferably from 1×10⁻³ -1×10³ atom-ppm and, in a caseif the content of the carbon atoms (C) and/or nitrogen atom (N) and/oroxygen atom (O) is in excess of 1×10³ atom-ppm, the content of the atoms(M) to control the conductivity is preferably 1×10⁻¹ -5×10⁴ atom-ppm.

According to this invention, incorporation of the carbon atoms (C)and/or nitrogen atoms (N) and/or oxygen atoms (O) in the layer region(CNO) can mainly obtain an effect of increasing the dark resistanceand/or hardness, and/or improving the control for the spectralsensitivity and/or enhancing the close bondability between the layerregion (CNO) and the layer region of the upper layer other than thelayer region (CNO). The content of carbon atoms (C), and/or nitrogenatoms (N) and/or oxygen atoms (O) in the layer region (CNO) ispreferably 1-9×10⁵ atom-ppm, preferably, 1×10¹ -5×10⁵ atom-ppm and mostmore preferably, 1×10² -3×10⁵ atom-ppm. In addition, if it is intendedto increase the dark resistance and/or the hardness, the content ispreferably 1×10³ -9×10⁵ atom-ppm and, preferably, it is 1×10² -5×10⁵atom-ppm in a case where the spectral sensitivity is intended to becontrolled.

In this invention, the spectral sensitivity can be controlled mainlyand, particularly, sensitivity to the light of longer wave length can beimproved in the case of using light of longer wavelength such as of asemiconductor laser by incorporating germanium atoms (Ge) and/or tinatoms (Sn) to the layer region (GS). The content of germanium atoms (Ge)and/or tin atoms (Sn) contained in the layer region is preferably1-9.5×10⁵ atom-ppm, more preferably, 1×10² -8×10⁵ atom-ppm and, mostsuitably, 5×10² -7×10⁵ atom-ppm.

In addition, hydrogen atoms (H) and/or halogen atoms (X) contained inthe upper layer in this invention can compensate the unbonded bands ofsilicon atoms (Si), thereby improving the quality of the layer. Thecontent of hydrogen atoms (H) or the sum of the hydrogen atoms (H) andhalogen atoms (X) in the upper layer is suitably 1×10³ -7×10⁵ atom-ppm,while the content of halogen atoms (X) is preferably 1-4×10⁵ atom-ppm.Particularly, in a case where the content of the carbon atoms (C),and/or nitrogen atoms (N) and/or oxygen atoms (O) in the upper layer isless than 3×10⁵ atom-ppm, the content of hydrogen atoms (H) or the sumof hydrogen atoms (H) and halogen atoms (X) is desirably 1×10³ -4×10⁵atom-ppm. Furthermore, in a case where the upper layer is composed ofpoly-Si(H,X), the content of hydrogen atoms (H) or the sum of hydrogenatoms (H) and halogen atoms (X) in the upper layer is preferably 1×10³-2×10⁵ atom-ppm and in a case where the upper layer is composed ofA-Si(H,X), it is preferably 1×10⁴ -7×10⁵ atom-ppm.

In this invention, the content of at least one of alkali metal, alkalineearth metal and transition metal in the upper layer is preferably 1×10⁻³-1×10⁴ atom-ppm, more preferably, 1×10⁻² -1×10³ atom-ppm and mostsuitably 5×10⁻² -5×10² atom-ppm.

In this invention, the upper layer composed of NonSi(H,X) can beprepared by the same vacuum deposition film formation as that for thelower layer described above, and glow discharge, sputtering, ionplating, HRCVD process, FOCVD process are particularly preferred. Thesemethods may be used in combination in one identical device system.

For instance, the glow discharge method may be performed in thefollowing manner to form the upper layer composed of Non-Si(H,X). Theraw material gases are introduced into an evacuatable deposition chamberand glow discharge is performed with the gases being introduced at adesired pressure, so that a layer of Non-Si(H,X) is formed as requiredon the surface of the support situated at a predetermined position andpreviously formed with a predetermined lower layer. The raw materialgases may contain a gas to supply silicon atoms (Si), a gas to supplyhydrogen atoms (H), and/or a gas to supply halogen atoms (X), anoptional gas to supply atoms (M) to control the conductivity, and/or agas to supply carbon atoms (C), and/or a gas to supply nitrogen atoms(N), and/or a gas to supply oxygen atoms (O), and/or a gas to supplygermanium atoms (Ge), and/or a gas to supply tin atoms (Sn) and/or a gasto supply at least one of alkali metal, alkaline earth metal andtransition metal.

The HRCVD process may be performed in the following manner to form theupper layer composed of Non-Si(H,X). The raw material gases areintroduced individually or altogether into an evacuatable depositionchamber, and glow discharge performed or the gases are heated with thegases being introduced at a desired pressure, during which activesubstance (A) is formed and another active substance (B) is introducedinto the deposition chamber, so that a layer of Non-Si(H,X) is formed asrequired on the surface of the support situated at a predeterminedposition and formed with a predetermined lower layer thereon in thedeposition chamber. The raw material gases may contain a gas to supplysilicon atoms (Si), a gas to supply halogen atoms (X), an optional gasto control conductivity (M), and/or a gas to supply carbon atoms (C),and/or a gas to supply nitrogen atoms (N), and/or a gas to supply oxygenatoms (O), and/or a gas to supply germanium atoms (Ge), and/or a gas tosupply tin atoms (Sn) and/or a gas to supply at least one of alkalimetal, alkaline earth metal and transition metal. Another activesubstance (B) is formed by introducing a gas to supply hydrogenactivation space. The active substance (A) and another active substance(B) may individually be introduced into the deposition chamber.

The FOCVD process may be performed in the following manner to form theupper layer of Non-Si(H,X). The raw material gases are introduced intoan evacuatable deposition chamber individually or altogether as requiredunder a desired gas pressure. The raw material gases may contain a gasto supply silicon atoms (Si), a gas to supply hydrogen atoms (H), anoptional gas to supply atoms (M) to control conductivity, and/or a gasto supply carbon atoms (C), and/or a gas to supply nitrogen atoms (N),and/or a gas to supply oxygen atoms (O), and/or a gas to supplygermanium atoms (Ge), and/or a gas to supply tin atoms (Sn) and/or a gasto supply at least one of alkali metal, alkaline earth metal andtransition metals. They may be introduced into the deposition chamberindividually or altogether as required. A halogen (X) gas is introducedinto the deposition chamber separately from the raw material gasesdescribed above and these gases subjected to chemical reactions in thedeposition chamber.

The sputtering method or the ion plating method may performed in thefollowing manner to form the upper layer composed of the Non-Si(H,X),basically, by the known method as described for example, in JapanesePatent Laid-Open No. Sho 61-59342.

According to this invention, the upper layer is formed, whilecontrolling the profile of the concentration C of atoms (M) to controlthe conductivity, carbon atoms (C), nitrogen atoms (N), oxygen atoms(O), germanium atoms (Ge), tin atoms (Sn) and at least one of alkalimetal atoms, alkaline earth metal atoms and transition metal atoms(simply referred to collectively as "atoms (Z)") across the layerthickness to obtain a layer having a desired depth profile across thelayer thickness. This can be achieved, in the case of glow discharge,HRCVD and FOCVD, by properly controlling the gas flow rate of a gas tosupply atoms (Z) the concentration of which is to be varied inaccordance with a desired rate of change in the concentration and thenintroducing the gas into the deposition chamber.

The flow rate may be changed by operating a needle valve disposed in thegas passage manually or by means of a customary means such as anexternal driving motor.

Alternatively, the flow rate setting to a mass flow controller for thecontrol of the gas flow rate is properly changed by an adequate meansmanually or using a programmable control device.

The gas to supply Si atoms used in this invention can include gaseous orgasifiable silicon hydrides (silanes) such as SiH₄, Si₂ H₆, Si₃ H₈ andSi₄ H₁₀. SiH₄ and Si₂ H₆ are preferable from the standpoint of ease ofhandling and the. efficient supply of Si. These gases to supply Si maybe diluted with an inert gas such as H₂, He, Ar and Ne if necessary.

According to the present invention, the gas to supply halogen includesvarious halogen compounds, for example, gaseous and gasifiable halogencompounds, for example, halogen gases, halides, interhalogen compoundsand halogen-substituted silane derivatives.

Additional examples in this invention can include, gaseous or gasifiablehalogen atom (X)-containing silicon hydride compounds composed ofsilicon atoms (Si) and halogen atoms (X).

Halogen compounds that can be suitably used in this invention caninclude halogen gases such as of fluorine, chlorine, bromine and iodine;and interhalogen compounds such as BrF, ClF, ClF₃, BrF₅, BrF₃, IF₃, IF₇ICl and IBr.

Examples of the halogen atoms (X)-containing silicon compounds, orhalogen atom (X)-substituted silane derivatives can include,specifically, silicon halides such as SiF₄, Si₂ F₆, SiCl₄ and SiBr₄.

In the case where the halogen-containing silicon compound is used toform the light receiving member for use in electrophotography accordingto this invention by the glow discharge or HRCVD method, it is possibleto form the upper layer composed of Non-Si(H,X) containing halogen atoms(X) on a desired lower layer without using a silico-hydride gas tosupply Si atoms.

In the case where the upper layer containing halogen atoms (X) is formedaccording to the glow discharge or HRCVD method, a silicon halide gas isused as the gas to supply silicon atoms to form the upper layer on adesired support. The silicon halide gas may further be mixed withhydrogen gas or a hydrogen atom (H)-containing silicon compound gas tofacilitate the introduction of hydrogen atoms (H) at a desired level.

The above-mentioned gases may be used individually or in combinationwith one another at a desired mixing ratio.

In this invention, the above-mentioned halogen compounds or halogen atom(X)-containing silicon compounds are used as effective material as thegas to supply halogen atoms, but gaseous or gasifiable hydrogen halidessuch as HF, HCl, HBr and HI; and halogen-substituted silicohydrides suchas SiH₃ F, SiH₂ F₂, SiHF₃, SiH₂ I₁, SiH₂ Cl₂, SiHCl₃, SiH₂ Br₂ and SiBr₃can also be used. Among them, hydrogen atom (H)-containing halides canbe used as preferably halogen supply gases in this invention uponforming the upper layer, because they supply the upper layer withhalogen atoms (X), as well as hydrogen atoms (H) which are veryeffective for the control of electric or photoelectric characteristics.

The introduction of hydrogen atoms (H) into the upper layer may also beaccomplished in another method by inducing discharge in the depositionchamber containing H₂ or silicoharide such as SiH₄, Si₂ H , Si₃ H₈ andSi₄ H₁₀ and a silicon compound to supply silicon atoms (Si).

The amount of hydrogen atoms (H) and/or halogen atoms (X) to beintroduced into the upper layer may be controlled by regulating thetemperature of the support, the amount of raw materials for hydrogenatoms and halogen atoms to be introduced into the deposition chamberand/or the electric power for discharge.

The upper layer may contain atoms (M) to control the conductivity, forexample, group III atoms, group V atoms or group VI atoms. This isaccomplished by introducing into the deposition chamber the rawmaterials to form the upper layer together with a raw materials tosupply group III atoms, raw materials to supply group V atoms or rawmaterial to supply group VI atoms. The raw material to supply group IIIatoms, the raw material to supply group V atoms, or the raw material tosupply group VI atoms may be gaseous at normal temperature and undernormal pressure or gasifiable under the layer forming conditions aredesirably used. The raw material to supply the group III atoms caninclude specifically boron hydrides such as B₂ H₆. B₄ H₁₀, B₄ H₉, B₅H₁₁, B₆ H₁₀, B₆ H₁₂ and B₆ H₁₄ or boron harides such as BF₃, BCl₃ andBBr₃ for the material to supply boron atoms. Additional examples areAlCl₃, GaCl₃, Ga(CH₃)₃, InCl.sub. 3 and TlCl₃.

The raw material to supply group V atoms that can be used effectively inthis present invention can include, phosphorus hydride such as PH₃, P₂H₄, etc. phosphorus halide such as PH₄ I, PF₃, PF₅, PCl₃, PCl₅, PBr₃,PBr₅ and PI₃ as the material to supply phosphorus atoms.

Additional examples as effective raw materials to supply group V atomscan also include AsH₃, AsF₃, AsCl₃ AsBr₃, AsF₅, SbH₃, SbF₃, SbF₅, SbCl₃,SbCl₅, BiH₃, BiCl₃, BiBr₃.

Raw materials to supply groups VI atoms can include those gaseous orgasifiable materials such as hydrogen sulfide (H₂ S), SF₄, SV₆, SO₂, SO₂F₂, COS, CS₂, CH₃ SH, C₂ H₅ SH, C₄ H₄ S, (CH₃)₂ S, C₂ H₅)₂ S, etc.Additional example can include, those gaseous or gasifiable materialssuch as SeH₂, SeF₆, (CH₃)₂ Se, (C₂ H₅)₂ Se, TeH₂, TeF₆, (CH₃)₂ Te, (C₂H₅)₂ Te.

The raw material for supplying atoms (M) to control the conductivity maybe diluted with an inert gas such as H₂, He, Ar and Ne if necessary.

The upper layer may contain carbon atoms (C), nitrogen atoms (N) oroxygen atoms (O). This accomplished by introducing into the chamber theraw material to supply carbon atoms (C), the raw material to supplynitrogen atoms (N) or raw material to supply oxygen atoms (O) in agaseous form together with other raw materials for forming the upperlayer. The raw material to supply carbon atoms (C), the raw material tosupply nitrogen atoms (N) or the raw material to supply oxygen atoms (O)are desirably gaseous at normal temperature and under normal pressure orgasifiable under the layer forming conditions.

A raw material that can effectively be used as the starting gas tosupply carbon atoms (C) can include those hydrocarbons having C and H asconstituent atoms, for example, saturated hydrocarbons having 1 to 4carbon atoms, ethylene series hydrocarbons having 2 to 4 carbon atomsand acetylene series hydrocarbon atoms 2 to 3 carbon atoms.

Examples of the saturated hydrocarbons include methane (CH₄), ethane (C₂H₅), propane , n-butane (n-C₄ H₁₀), pentane (Examples of ethylene serieshydrocarbons include ethylene (C₂ H₄), propylene butene-1), butene-2,isobutylene and pentene (C₅ H₁₀). Examples of acetylene serieshydrocarbon can include, acetylene (C₂ H₂), methylacetylene ) and butine(C₄ H₆).

Additional example can include halogenated hydrocarbon gases such asCF₄, CCl₄ and CH₃ CF₃ with a view point that halogen atom (X) can beintroduced in addition to hydrocarbons (C).

Examples of the raw materials gas to introduce nitrogen atoms (N) caninclude those having N as constituent atoms, or N and H as constituentatoms, for example, gaseous or gasifiable nitrogen, or nitrogencompounds such as nitrides and azides, for example, nitrogen (N₂),ammonia (NH₃), hydrazine (H₂ NNH₂), hydrogen azide (HN₃) and ammoniumazide (NH₄ N₃). Additional examples can include halogenated nitrogencompounds such as nitrogen trifluoride (F₃ N) and nitrogen tetrafluoride(F₄ N₂), etc. which can introduce nitrogen atoms as well as halogenatoms (X).

Examples of the raw material gas to introduce oxygen atoms (O) caninclude oxygen (O₂), ozone (O₃), nitrogen monoxide (NO), nitrogendioxide (NO₂), dinitrogen oxide (N₂ O), dinitrogen trioxide (N₂ O₃),trinitrogen tetraoxide (N₃ O₄), dinitrogen pentaoxide (N₂ O₅) andnitrogen trioxide (NO₃), as well as lower siloxanes having silicon atoms(Si), oxygen atoms (O) and hydrogen atoms (H) as constituent atoms, forexample, disiloxane (H₃ SiOSiH₃) and trisiloxane (H₃ SiOSiH₂ OSiH₃).

The upper layer may be introduced with germanium (Ge) or tin atoms (Sn).This is accomplished by introducing, into the deposition chamber, theraw material to supply germanium (Ge) or the raw material to supply tinatoms (Sn) into the deposition chamber together with other raw materialsto form the upper layer in a gaseous form. The raw material to supplygermanium (Ge) or the raw material to supply tin atoms (Sn) maydesirably be gaseous at normal temperature and normal pressure orgasifiable under the layer forming conditions.

The material that can be used as a gas to supply germanium atoms (Ge)can include, gaseous or gasifiable germanium hydrides such as GeH₄, Ge₂H₆, Ge₃ H₈ and Ge₄ H₁₀. and GeH₄, Ge₂ H₆ and Ge₃ H₈ being preferablefrom the standpoint of easy handling at the time of layer forming andthe efficient supply of germanium atoms (Ge).

Additional examples of the raw material for effectively forming theupper layer can include those gaseous or gasifiable materials such asgermanium hydride-halides, for example, GeHF₃, GeH₂ F₂, GeH₃ F, GeHCl₃,GeH₂ Cl₂, GeH₃ Cl, GeHBr₃, GeH₂ Br₂. GeH₃ Br, GeHI₃, GeH₂ I₂ and GeH₃ I,as well as germanium halides such as GeF₄, GeCl₄, GeBr₄, GeI₄, GeF₂,GeCl₂, GeBr₂ and GeI₂.

The material that can be used as a gas to supply tin atoms (Sn) caninclude gaseous or gasifiable tin hydrides such as SnH₄, Sn₂ H₆, Sn₃ H₈and Sn₄ H₁₀ and SnH₄, Sn₂ H₆ and Sn₃ H₈ being preferred from thestandpoint of easy handling at the time of layer forming and theefficient supply of tin atoms (Sn).

Additional examples of the starting material for effectively forming theupper layer can include gaseous or gasifiable tin halide-hydrides suchas SnHF₃, SnH₂ F₂, SnH₃ F, SnHCl₃, SnH₂ Cl₂, SnH₃ Cl, SnHBr₃, SnH₂ Br₂,SnH₃ Br, SnHI₃, SnH₂ I₂ and SnH₃ I, as well as tin halides such as SnF₄,SnCl₄, SnBr₄, SnI₄, SnF₂, SnCl₂, SnBr₂ and SnI₂.

The lower layer may contain magnesium atoms (Mg). This accomplished byintroducing, into the deposition chamber, the raw materials forsupplying magnesium atoms (Mg) to form the upper layer together withother raw materials for forming the upper layer in a gaseous form. Theraw material to supply magnesium atoms (Mg) may be gaseous at normaltemperature and a normal pressure or gasifiable under the layer formingconditions.

The substance that can be used as a gas to supply magnesium atoms (Mg)can include organometallic compounds containing magnesium atoms (Mg).Bis(cyclopentadienyl)magnesium (II) complex salt (Mg(C₅₆)₂) ispreferable from the stand point of easy handling at the time of layerform an the effective supply of magnesium atoms (Mg).

The gas to supply magnesium atoms (Mg) may be diluted with an inert gassuch as H₂, He, Ar and Ne if necessary.

The upper layer may contain copper atoms (Cu). This is accomplished byintroducing, into the deposition chamber, the raw material to supplycopper atoms (Cu) for forming the upper layer together with other rawmaterials for forming the upper layer in a gaseous form. The rawmaterial to supply copper atoms (Cu) may be gaseous at normaltemperature and normal pressure and gasifiable under the layer formingcondition.

The material that can be used as a gas to supply copper atoms (Cu) caninclude organometallic compounds containing copper atoms (Cu). Copper(II)bisdimethylglyoximate CU(C₄ N₂ O₂)₂ is preferred from the standpoint of easy handling at the time of layer forming and efficient supplyof magnesium atoms (Mg).

The gas to supply copper atoms (Cu) may be diluted with an inert gassuch as H₂. He, Ar and Ne, if necessary.

The upper layer may contain sodium atoms (Na), yttrium atoms (Y),manganese atoms (Mn) or zinc atoms (Zn). This is accomplished byintroducing, into the deposition chamber, raw material to supply sodiumatoms (Na), the raw material to supply yttrium atoms (Y), the rawmaterial to supply manganese atoms (Mn) or the raw materials to supplyzinc atoms (Zn) for forming the upper layer together with other rawmaterials for forming the upper layer in a gaseous form. The rawmaterial to supply sodium atoms (Na), the raw material to supply yttriumatoms (Y), the raw material to supply manganese atoms (Mn) or the rawmaterial to supply zinc atoms (Zn) may be gaseous at normal temperatureand normal pressure or gasifiable at least under the layer formingconditions.

The material that can be effectively used as a gas to supply sodiumatoms (Na) can include sodium amine (NaNH₂) and organometallic compoundscontaining sodium atoms (Na). Among them, sodium amine (NaNH₂) ispreferred from the standpoint of easy handling at the time of layerforming and the efficient supply of sodium atoms (Na).

The material that can be effectively used as a gas to supply yttriumatoms (Y) can include organometallic compounds containing ytrrium atoms(Y). Triisopropanol yttrium Y(Oi-C₃ H₇)₃ is preferred from thestandpoint of easy handling at the time of layer forming and theeffective supply of yttrium atoms (Y).

The material can be effectively used as a gas to supply manganese atoms(Mn) can include organometallic compounds containing manganese atoms(Mn). Monomethylpentacarbonyl manganese Mn(CH₃)(CO)₅ is preferred fromthe standpoint of easy handling at the time of layer forming and theefficient supply of manganese atoms (Mn).

The material that can be effectively used as a gas to supply zinc atoms(Zn) can include organometallic compounds containing Zinc atoms (Zn).Diethyl zinc Zn(C₂ H₅)₂ is preferred from the standpoint of easyhandling at the time of layer forming and the efficient supply of zincatoms (Zn).

The gas to supply sodium atoms (Na), yttrium atoms (Y), manganese atoms(Mn) or zinc atoms (Zn) may be diluted with an inert gas such as H₂, He,Ar and Ne, if necessary.

In the present invention, the layer thickness of the upper layer is1-130 um, preferably, 3-100 um and, most suitably, 5-60 um from thestandpoint of the desired electrophotographic characteristics andeconomical effect.

In order to form the upper layer composed of Non-Si(H,X) which has thecharacteristics to achieve the object of this invention, it is necessaryto properly establish the gas pressure in the deposition chamber and thetemperature of the support.

The gas pressure in the deposition chamber should properly be selectedaccording to the design of the layer. It is usually 1×10⁻⁵ -10 Torr,preferably, 1×10⁻⁴ -3 Torr and, most suitably, 1×10⁻⁴ -1 Torr. In thecase of selecting A-Si(H, X) as the Non-Si(H,X) for the upper layer, thetemperature (Ts) of the support should properly be selected according tothe desired design for the layer and it is usually 50°-400° C.,preferably, 100°-300° C. In a case where poly-Si(H,X) is selected as theNon-Si(H,X) for the upper layer, there are various methods for formingthe layer including, for example, the following methods.

In one method, the temperature of the support is set to a hightemperature, specifically, to 400°-600° C. and a film is deposited onthe support by means of the plasma CVD process.

In another method, an amorphous layer is formed at first to the surfaceof the support. That is, a film is formed on a support heated to atemperature of about 250° C. by a plasma CVD process and the amorphouslayer is annealed into a polycrystalline layer. The annealing isconducted by heating the support to 400°-600° C. about for 5-30 min, orapplying laser beams for about 5-30 min.

Upon forming the upper layer composed of Non-Si(H,X) by the glowdischarge method according to this invention, it is necessary toproperly select the discharge electric power to be supplied to thedeposition chamber according to the design of the layer. It is usually5×10⁻⁵ -10 W/cm³, preferably, 5×10⁻⁵ -5 W/cm³ and, most suitably, 1×10⁻³-2×10⁻¹ W/cm³.

The gas pressure of the deposition chamber, the temperature of thesupport and the discharge electric power to be supplied to thedeposition chamber mentioned above should be set interdependently sothat the upper layer having the desired characteristic properties can beformed.

EFFECT OF THE INVENTION

The light receiving member for use in electrophotography according tothis invention, having the specific layer structure as described above,can overcome all of the problems in the conventional light receivingmembers for use in electrophotography constituted with A-Si and it canexhibit particularly excellent electrical properties, opticalproperties, photoconductive properties, image properties, durability andcharacteristics in the circumstance of use.

Particularly, since the lower layer contains aluminum atoms (Al),silicon atoms (Si) and, particularly, hydrogen atoms (H) across thelayer thickness in an unevenly distributed state according to thepresent invention, injection of charges (photocarriers) across thealuminum support and the upper layer can be improved and, moreover,since the texture and continuity for the constituent elements betweenthe aluminum support and the upper layer is improved, image propertiessuch as coarse image or dots can be improved thereby enabling to stablyreproduce high quality images with clear half-tone and high resolvingpower.

In addition, it is possible to prevent image defects or peeling ofNon-Si(H,X) films due to impactive mechanical pressure applied for arelatively short period of time to the light receiving member for use inelectrophotography, thereby improving the durability and, further,stresses resulted from the difference in the heat expansion coefficientsbetween aluminum support and Non-Si(H,X) film to prevent cracking orpeeling in the No-Si(H,X) film to thereby enhance the yield of theproductivity.

Incorporation of at least one of carbon atoms, nitrogen atoms and oxygenatoms into the layer region of the upper layer in adjacent with thelower layer can further improve the close bondability between the upperlayer and the lower layer, to prevent the occurrence of image defectsand peeling of the Non-Si(H,X) films thereby improving the durability.

Further, since atoms (Mc) to control the image quality are contained inthe lower layer in addition to aluminum atoms (Al), silicon atoms (Si)and hydrogen atoms (H), the injection of photocarriers across thealuminum support and the upper layer is further improved and thetransferability of the photocarriers in the lower layer is improved.Accordingly, image characteristics such as coarse image can be improvedto stably reproduce a high quality image with clear half-tone and highresolving power.

Further, since halogen atoms contained in the lower layer contribute tocompensate the dangling bonds of silicon atoms, aluminum atoms, etc. toattain more stable state in view of the texture and structure accordingto the present invention, remarkable improvement is made in view of theimage characteristics such as coarse image or dots coupled with theforegoing effect due to the distribution of the silicon atoms, aluminumatoms and hydrogen atoms.

At least one of germanium atoms (Ge) and tin atoms (Sn) contain in thelower layer according to this invention contributes to significantlyimprove the injection of the photocarriers across the aluminum supportand the upper layer, close bondability and the transferability of thephotocarriers in the lower layer. This in turn provides remarkableimprovement in the characteristics and durability of a light receivingmember.

Particularly, at least one of alkali metal atoms, alkaline earth metalatoms and transition metal atoms contained in the upper layer accordingto the present invention provides an outstanding feature that thehydrogen atoms and/or halogen atoms contained in the lower layer aredispersed more effectively to prevent layer peeling resulted from thecohesion of hydrogen atoms and/or halogen atoms during long time use.

This contributes to significantly improve the injection of photocarriersand the close bondability across the aluminum support and the upperlayer, and the transferability of photocarriers in the lower layer asdescribed above. This also makes significant improvement in the propertyand durability of an image as obtained. These factors result in stableproduction of the light receiving member having a stable quality.

PREFERRED EMBODIMENT OF THE INVENTION

This invention will be described more specifically referring to examplesbut the invention is no way limited only thereto.

EXAMPLE 1

A light receiving member for use in electrophotography according to thisinvention was formed by radio frequency (hereinafter simply referred toas "RF") glow discharge decomposition.

FIG. 37 shows an apparatus for producing the light receiving member foruse in electrophotography by the RF glow discharge decomposition,comprising a raw material gas supply device 1020 and a deposition device1000.

In the figure, raw material gases for forming the respective layers inthis invention were tightly sealed in gas cylinders 1071, 1072, 1073,1074, 1075, 1076 and 1077, and a tightly sealed vessel 1078, in whichthe cylinder 1071 was for SiH₄ gas (99.99% purity), the cylinder 1072was for H₂ gas (99.9999%), the cylinder 1073 was for CH₄ gas (99.999%purity), cylinder 1074 was for PH₃ gas diluted with H₂ gas (99.999%purity, hereinafter simply referred to as "PH₃ /H₂ "), the cylinder 1075was for B₂ H₆ gas diluted with H₂ gas (99.999% purity, hereinaftersimply referred to as "B₂ H₆ /H₂ "), the cylinder 1076 was for NO gas(99.9% purity), the cylinder 1077 was for He gas (99.999% purity), andthe vessel 1078 was tightly sealed charged with AlCl₃ (99.99% purity).

In the figure, a cylindrical aluminum support 1005 had an outer diameterof 108 mm and a mirror-finished surface.

After confirming that valves 1051-1057 for the gas cylinders 1071-1077,flow-in valves 1031-1037 and a leak valve 1015 for the depositionchamber 1001 were closed and flow-out valves 1041-1047 and an auxiliaryvalve 1018 were opened, a main valve 1016 was at first opened toevacuate the deposition chamber 1001 and gas pipeways by a vacuum pumpnot illustrated.

Then, when the indication of a vacuum meter 1017 showed about 1×10⁻³Torr, the auxiliary valve 1018, the flow-out valves 1041-1047 wereclosed.

Then, the valves 1051-1057 were opened to introduce SiH₄ from the gascylinder 1071, H₂ gas from the gas cylinder 1072, CH₄ gas from the gascylinder 1073, PH₃ /H₂ gas from the gas cylinder 1074, B₂ H₆ /H₂ gasfrom the gas cylinder 1075, NO gas from the gas cylinder 1076 and He gasfrom the gas cylinder 1077, and the pressures for the respective gaseswere adjusted to 2 kg/cm² by pressure controllers 1061-1067.

Then, the flow-in valves 1031-1037 were gradually opened to introducethe respective gases in mass flow controllers 1021-1027. In this case,since the He gas from the gas cylinder 1077 was passed through thetightly sealed vessel 1078 charged with AlCl₃, the AlCl₃ gas dilutedwith the He gas (hereinafter simply referred to as "AlCl₃ /He") wasintroduced to the mass flow controller 1027.

The temperature of the cylindrical aluminum support 1005 disposed in thedeposition chamber 1001 was heated to 250° C. by a heater 1014.

After completing the preparation for the film formation as describedabove, each of the lower and upper layers was formed on the cylindricalaluminum support 1005.

The lower layer was formed by gradually opening the flow-out valves1041, 1042 and 1047, and the auxiliary valve 1018 thereby introducingthe SiH₄ gas, H₂ gas and AlCl₃ /He gas through the gas dischargeaperture 1009 of a gas introduction pipe 1018 to the inside of thedeposition chamber 1001. In this case, the gas flow rates werecontrolled by the respective mass flow controllers 1021, 1022 and 1027such that the gas flow rates were set to 50 SCCM for SiH₄, 10 SCCM forH₂ gas, and 120 SCCM for AlCl₃ /He. The pressure in the depositionchamber was controlled to 0.4 Torr by adjusting the opening of the mainvalve 1016 while observing the vacuum meter 1017. Then, RF power wasintroduced to the inside of the deposition chamber 1001 by way of an RFmatching box 1012 while setting the power of a RF power source (notillustrated) to 5 mW/cm³, to cause RF glow discharge, thereby startingthe formation of the lower layer on the aluminum support. The mass flowcontrollers 1021, 1022 and 1027 were adjusted during formation of thelower layer such that the SiH₄ gas flow remains at a constant rate of 50SCCM, the H₂ gas flow rate is increased at a constant ratio from 10 SCCMto 200 SCCM and the AlCl₃ /He gas flow rate is decreased at a constantratio from 120 SCCM to 40 SCCM. Then, when the lower layer of 0.05 umthickness was formed, the RF glow discharge was stopped and the entranceof the gas to the inside of the deposition chamber 1001 is interruptedby closing the flow-out valves 1041, 1042 and 1047 and the auxiliaryvalve 1018, to complete the formation of the lower layer.

Then, for forming the first layer region of the upper layer, theflow-out valves 1041, 1042 and 1046, and the auxiliary valve 1018 weregradually opened to flow SiH₄ gas, H₂ gas and NO gas through the gasdischarge aperture 1009 of the gas introduction pipe 1008 into thedeposition chamber 1001. In this case, respective mass flow controllers1021, 1022 and 1026 were adjusted so that the SiH₄ gas flow rate was 100SCCM, H₂ gas flow rate was 100 SCCM and NO gas flow rate was 30 SCCM.The pressure in the deposition chamber 1001 was controlled to 0.35 Torrby adjusting the opening of the main valve 1016 while observing thevacuum meter 1017. Then, RF power was introduced into the depositionchamber 1001 through the radio frequency matching box 1012 while settingthe power of a RF power source (not illustrated) to 10 mW/cm³, to causeRF glow discharge and start the formation of the first layer region ofthe upper layer over the lower layer. Then, when the first layer regionof the upper layer with 3 um thickness was formed, the RF glow dischargewas stopped and the flow of the gas into the deposition chamber 1001 wasinterrupted by closing the flow-out valves 1041, 1042 and 1046, and theauxiliary valve 1018, thereby completing the formation of the firstlayer region of the upper layer.

Then, for forming the second layer region of the upper layer, theflow-out valves 1041 and 1042, and the auxiliary valve 1018 weregradually opened to flow SiH₄ gas and H₂ gas through the gas dischargeaperture 1009 of the gas introduction pipe 1008 into the depositionchamber 1001. In this case, respective mass flow controllers 1021 and1022 were adjusted so that the SiH₄ gas flow rate was 300 SCCM and H₂flow rate was 300 SCCM. The pressure in the deposition chamber 1001 wascontrolled to 0.5 Torr by adjusting the opening of the main valve 1016while the observing the vacuum meter 1017. Then, RF power was introducedinto the deposition chamber 1001 through the radio frequency matchingbox 1012 while setting the power of the RF power source (notillustrated) to 15 mW/cm³, to cause the RF glow discharge and start theformation of the second layer region on the first layer region of theupper layer. Then, when the second layer region of the upper layer with20 um thickness was formed, the RF glow discharge was stopped and theflow of the gas into the deposition chamber 1001 was interrupted byclosing the flow-out valves 1041 and 1042, and the auxiliary valve 1018,thereby completing the formation of the second layer region of the upperlayer.

Then, for forming the third layer region of the upper layer, theflow-out valves 1041 and 1043, and the auxiliary valve 1018 weregradually opened to flow SiH₄ gas and CH₄ gas through the gas dischargeaperture 1009 of the gas introduction pipe 1008 into the depositionchamber 1001. In this case, respective mass flow controllers 1021 and1023 were adjusted so that the SiH₄ gas flow rate was 50 SCCM and CH₄flow rate was 500 SCCM. The pressure in the deposition chamber 1001 wascontrolled to 0.4 Torr by adjusting the opening of the main valve 1016while observing the vacuum meter 1017. Then, RF power was introducedinto the deposition chamber 1001 through the radio frequency matchingbox 1012 while setting the power of the RF power source (notillustrated) to 10 mW/cm³, to cause the RF glow discharge and start theformation of the third layer region on the second layer region of theupper layer. Then, when the third layer region of the upper layer with0.5 um thickness was formed, the RF glow discharge was stopped and theflow of the gas into the deposition chamber 1001 was interrupted byclosing the flow-out valves 1041 and 1043, and the auxiliary valve 1018,thereby completing the formation of the third layer region of the upperlayer.

The conditions for preparing the light receiving member for use inelectrophotography described above are shown in Table 1.

It will be apparent that all of the flow-out valves other than thoserequired for forming the respective layers were completely closed and,for avoiding the respective gases from remaining in the depositionchamber 1001 and in the pipeways from the flow-out valves 1041-1047 tothe deposition chamber 1001, the flow-out valves 1041-1047 were closed,the auxiliary valve 1018 was opened and, further, the main valve wasfully opened thereby evacuating the inside of the system once to a highvacuum degree as required.

Further, for forming the layer uniformly during this layer formation,the cylindrical aluminum support 1005 was rotated at a desired speed bya driving device not illustrated.

COMPARATIVE EXAMPLE 1

A light receiving member for use in electrophotography was preparedunder the same preparation conditions as those in Example 1 except fornot using H₂ gas upon forming the lower layer. The conditions forpreparing the light receiving member for use in electrophotography areshown in Table 2.

The light receiving members for use in electrophotography thus preparedin Example 1 and Comparative Example 1 were set respectively to anelectrophotographic apparatus, i.e., a copying machine NP-7550manufactured by Canon Inc. and modified for experimental use and, whenseveral electrophotographic properties were checked under variousconditions, it was found that both of them had outstandingcharacteristics with voltage withstanding property in that no imagedefects were formed even if a high voltage was applied to the lightreceiving member for use in electrophotography by highly intensivecorona discharge or frictional discharge by means of a cleaning agent.

Then, when the number of dots as the image characteristics werecompared, it was found that the number of dots, particularly, the numberof dots with less than 0.1 mm diameter of the light receiving member foruse in electrophotography of Example 1 was less than 3/4 of that of thelight receiving member for use in electrophotography in ComparativeExample 1. In addition, for comparing the "coarse image", when the imagedensity was measured for circular regions each of 0.05 mm diameterassumed as one unit at 100 points and the scattering in the imagedensity was evaluated, it was found that the scattering in the lightreceiving member for use in electrophotography of Example 1 was lessthan 2/3 for that of the light receiving member for use inelectrophotography in Comparative Example 1, and the light receivingmember for use in electrophotography of Example 1 was excellent over thelight receiving member for use in Electrophotography of ComparativeExample 1 in view of the visual observation.

In addition, for comparing the occurrence of image defects and thepeeling of the light receiving layer due to impactive mechanicalpressure applied for a relatively short period of time to the lightreceiving member for use in electrophotography, when stainless steelballs of 3.5 mm diameter were fallen freely from the vertical height of30 cm above the surface of the light receiving member for use inelectrophotography and abutted against the surface of the lightreceiving member for use in electrophotography, to thereby measure thefrequency of occurrence for cracks in the light receiving layer, it wasfound that the rate of occurrence in the light receiving member for usein electrophotography of Example 1 was less than 3/5 for that in thelight receiving member for use in electrophotography of ComparativeExample 1.

As has been described above, the light receiving member for use inelectrophotography of Example 1 was superior to the light receivingmember for use in electrophotography of Comparative Example 1.

EXAMPLE 2

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 except for changing the way of varyingthe AlCl₃ /He gas flow rate in the lower layer, under the preparationconditions shown in Table 3 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 1.

EXAMPLE 3

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 except for not using the CH₄ gas in theupper layer of Example 1, under the preparation conditions shown inTable 4 and, when evaluated in the same manner, satisfactory improvementwas obtained to the dots, coarse image and peeling in the same manner asin Example 1.

EXAMPLE 4

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 except for replacing the PH₃ /H₂ gascylinder with a He gas (99.9999% purity) cylinder and, further, usingSiF₄ gas and N₂ gas from cylinder not illustrated in Example 1, underthe preparation conditions shown in Table 5 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 1.

EXAMPLE 5

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 except for replacing the B₂ H₆ /H₂ gascylinder with an Ar gas (99.9999% purity) cylinder and, furtherreplacing the NO gas cylinder with a NH₃ gas (99.999% purity) cylinderin Example 1, under the preparation conditions shown in Table 6 and,when evaluated in the same manner, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example1.

EXAMPLE 6

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by further using PH₃ /H₂ gas and C₂ H₆gas in the upper layer, under the preparation conditions shown in Table7 and, when evaluated in the same manner, satisfactory improvement wasobtained to dots, coarse image and peeling in the same manner as inExample 1.

EXAMPLE 7

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by further using SiF₄ gas from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 8 and, when evaluated in the same manner,satisfactory improvement was obtained to dots, coarse image and. peelingin the same manner as in Example 1.

EXAMPLE 8

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by further using N₂ gas from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 9 and, when evaluated in the same manner,satisfactory improvement was obtained to dots, coarse image and peelingin the same manner as in Example 1.

EXAMPLE 9

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 except for replacing the CH₄ gascylinder with a C₂ H₂ gas (99.9999% purity) cylinder in Example 1, underthe preparation conditions shown in Table 10 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 1.

EXAMPLE 10

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by replacing the NO gas cylinder with aN₂ gas cylinder in Example 1, under the preparation conditions shown inTable 11 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 1.

EXAMPLE 11

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by replacing the NO gas cylinder with aNH₃ gas (99.999% purity) cylinder in Example 1, under the preparationconditions shown in Table 12 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 1.

EXAMPLE 12

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 6 by further using SiF₄ gas from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 13 and, when evaluated in the same manner,satisfactory improvement was obtained to dots, coarse image and peelingin the same manner as in Example 6.

EXAMPLE 13

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 9 by further using B₂ H₆ /H₂ gas in theupper layer, under the preparation conditions shown in Table 14 and,when evaluated in the same manner, satisfactory improvement was obtainedto dots, coarse image and peeling in the same manner as in Example 9.

EXAMPLE 14

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 11 by further using PH₃ /H₂ gas in theupper layer, under the preparation conditions shown in Table 15 and,when evaluated in the same manner, satisfactory improvement was obtainedto dots, coarse image and peeling in the same manner as in Example 11.

EXAMPLE 15

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by further using GeH₄ from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 16 and, when evaluated in the same manner,satisfactory improvement was obtained to dots, coarse image and peelingin the same manner as in Example 1.

EXAMPLE 16

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by changing the outer diameter of thecylindrical aluminum support to 80 mm in Example 1, under thepreparation conditions shown in Table 17 and, when evaluated in the samemanner as in Example 1, except for using an electrophotographicapparatus, i.e., a copying machine NP-9030 manufactured by Canon Inc.and modified for the experimental use, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 1.

EXAMPLE 17

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by changing the outer diameter of thecylindrical aluminum support to 60 mm in Example 1, under thepreparation conditions shown in Table 18 and, when evaluated in the samemanner as in Example 1, except for using an electrophotographicapparatus, i.e., a copying machine NP-150Z manufactured by Canon Inc.and modified for the experimental use, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 1.

EXAMPLE 18

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by changing the outer diameter of thecylindrical aluminum support to 30 mm in Example 1, under thepreparation conditions shown in Table 19 and, when evaluated in the samemanner as in Example 1, except for using an electrophotographicapparatus, i.e., a copying machine FC-5 manufactured by Canon Inc. andmodified for the experimental use, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example1.

EXAMPLE 19

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by changing the outer diameter of thecylindrical aluminum support to 15 mm in Example 1, under thepreparation conditions shown in Table 20, and evaluated in the samemanner as in Example 1 except for using an electrophotographicapparatus, manufactured for experimental use, satisfactory improvementwas obtained to the dots, coarse image and peeling in the same manner asin Example 1.

EXAMPLE 20

A light sensitive member for use in electrophotography was prepared,under the same preparation conditions as those in Example 16 by using acylindrical aluminum support applied with mirror-finishing fabricationin Example 16 and further machined into a cross sectional shape of: a=25um, b=0.8 um as shown in FIG. 38 by a diamond point tool and, whenevaluated in the same manner as in Example 16, satisfactory improvementwas obtained to, the dots, coarse image and peeling in the same manneras in Example 16.

EXAMPLE 21

A light receiving member for use in electrophotography was prepared,under the same preparation conditions as those in Example 16 using acylindrical aluminum support applied with mirror-finish fabrication andsubsequently applied with a so-called surface dimpling of causing anumber of hit pits to the surface of the cylindrical aluminum support bythe exposure to a plurality of dropping bearing balls to form into across sectional shape of: c=50 um and d=1 um as shown in FIG. 39 and,when evaluated in the same manner as in Example 16, satisfactoryimprovement was be obtained for the dots, coarse image and peeling inthe same as in Example 16.

EXAMPLE 22

A light receiving member for use in electrophotography having an upperlayer comprising poly-Si(H, X) was prepared in the same manner as inExample 9 by using a cylindrical aluminum support heated to atemperature of 500° C., under the preparation conditions as shown inTable 21 and, when evaluated in the same manner, satisfactoryimprovement was obtained to dots, coarse image and peeling in the samemanner as in Example 9.

EXAMPLE 23

A light receiving member for use in electrophotography according to thisinvention was formed by microwave (hereinafter simply referred to as"uW") glow discharge decomposition.

A production apparatus for the light receiving member for use inphotography by the uW glow discharge decomposition shown in FIG. 41 wasused, in which a decomposition device 1100 for use in the uW glowdischarge decomposition shown in FIG. 40 was used instead of thedeposition device 1000 in the production apparatus of RF glow dischargedecomposition shown in FIG. 37, and it was connected with a raw materialgas supply device 1020.

In the figure, a cylindrical aluminum support 1107 had 108 mm of outerdiameter and mirror-finished surface.

At first, in the same manner as in Example 1, the inside of thedeposition chamber 1101 and the gas pipeways was evacuated such that thepressure in the deposition chamber 1101 was 5×10⁻⁶ Torr.

Then, in the same manner as in Example 1, the respective gases wereintroduced in the mass flow controllers 1021-1027. In this case,however, a SiF₄ gas cylinder was used in place of the N₂ gas cylinder.

Further, the cylindrical aluminum support 1107 disposed in thedeposition chamber 1101 was heated to a temperature of 250° C. by aheater not illustrated.

After the preparation for the film formation was thus completed, each ofthe lower and the upper layers was formed on the cylindrical aluminumsupport 1107. The lower layer was formed by gradually opening theflow-out valves 1041, 1042 and 1047 and the auxiliary valve 1018,thereby flowing the SiH₄ gas, H₂ gas and AlCl₃ /He gas through the gasdischarge aperture not illustrated of the gas introduction pipe 1110into a plasma generation region 1109. In this case, the gas flow ratewas controlled by each of the mass flow controllers 1021, 1022 and 1027such that SiH₄ gas flow rate was 150 SCCM, H₂ gas flow rate was 20 SCCMand AlCl₃ gas flow rate was 400 SCCM. The pressure in the depositionchamber 1101 was set to 0.6 mTorr by adjusting the opening of the mainvalve not illustrated while observing the vacuum meter not illustrated.Then, uW power was introduced by way of a wave guide portion 1103 and adielectric window 1102 into a plasma generation region 1109 by settingthe power for a uW power source not illustrated to 0.5 W/cm³, to causeuW glow discharge and start the formation of the lower layer on thecylindrical aluminum support 1107. The mass flow controllers 1021, 1022and 1027 were controlled such that the SiH₄ gas flow rate remained at aconstant rate of 150 SCCM, the H₂ gas flow rate was increased at aconstant ratio from 20 SCCM to 500 SCCM, the AlCl₃ /He gas flow rate wasreduced at a constant ratio from 400 SCCM to 80 SCCM for the 0.01 um onthe support side, while reduced at a constant ratio from 80 SCCM to 50SCCM for 0.01 um on the side of the upper layer during formation of thelower layer. When the lower layer of 0.02 um thickness was formed, theuW glow discharge was stopped, the flow-out valves 1041, 1042, 1047 andthe auxiliary valve 1018 were closed to interrupt the flow of the gasinto the plasma generation region 1109 thereby completing the formationof the lower layer.

Then, for forming the first layer region of the upper layer, theflow-out valves 1041, 1042, 1044, 1045 and 1046, and the auxiliary valve1018 were gradually opened to flow SiH₄ gas, H₂ gas and SIF₄ gas, B₂ H₆lH₂ and NO gas through the gas discharge aperture not illustrated of thegas introduction pipe 1110 into the plasma generation space 1109. Inthis case, respective mass flow controllers 1021, 1022, 1024, 1025 and1026 were adjusted so that the SiH₄ gas flow rate was 3500 SCCM, H₂ gasflow rate was 350 SCCM, SiF₄ gas flow rate was 20 SCCM, B₂ H₆ H₂ gasflow rate was 600 ppm to the SiH₄ gas flow rate and NO gas flow rate was13 SCCM. The pressure in the deposition chamber 1101 was controlled to0.5 mTorr. Then, RF power was introduced into the plasma generationchamber 1109 while setting the power of RF power source (notillustrated) to 0.5 mW/cm³, to cause uW glow discharge and start theformation of the first layer region of the upper layer over the lowerlayer. Then, the first layer region of 3 um thickness of the upper layerwas formed.

Then, for forming the second layer region of the upper layer, theflow-out valves 1041, 1042 and 1044, and the auxiliary valve 1018 weregradually opened to flow SiH₄ gas, H₂ gas and SiF₄ gas through the gasdischarge aperture not illustrated of the gas introduction pipe 1110into the plasma generation space 1109. In this case, respective massflow controllers 1021, 1022 and 1024 were adjusted so that the SiH₄ gasflow rate was 700 SCCM, H₂ gas flow rate was 500 SCCM and SiF₄ gas flowrate was 30 SCCM. The pressure in the deposition chamber 1101 wascontrolled to 0.5 mTorr. Then, the power of a uW power source (notillustrated) was set to 0.5 mW/cm³, to cause uW glow discharge in theplasma generation region 1109 and form the second layer region with 20um thickness of the upper layer on the first layer region of the upperlayer.

Then, for forming the third layer region of the upper layer, theflow-out valves 1041 and 1043 and the auxiliary valve 1018 weregradually opened to flow SiH₄ gas and CH₄ gas through the gas dischargeaperture not illustrated of the gas introduction pipe 1110 into theplasma generation space 1109. In this case, respective mass flowcontrollers 1021 and 1023 were adjusted so that the SiH₄ gas flow ratewas 150 SCCM and CH₄ gas flow rate was 500 SCCM. The pressure in thedeposition chamber 1101 was controlled to 0.3 mTorr. Then, the power ofa uW power source (not illustrated) was set to 0.5 mW/cm³, to cause uWglow discharge in the plasma generation region 1109 and the third layerregion with 0.5 um thickness of the upper layer was formed on the secondlayer region of the upper layer.

The conditions for preparing the light receiving member for use inelectrophotography described above are shown in Table 22.

When the light receiving member for use in electrophotography wasevaluated in the same manner in Example 1, improvement was obtained tothe dots, coarse image and peeling in the same manner as in Example 1.

EXAMPLE 24

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by replacing the CH₄ gas cylinder with aC₂ H₂ gas (99.9999% purity) cylinder in Example 1, under the preparationconditions shown in Table 23 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 1.

EXAMPLE 25

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by replacing the No gas cylinder with aN₂ gas cylinder in Example 1, under the preparation conditions shown inTable 24 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 1.

EXAMPLE 26

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by replacing the NO gas cylinder with aNH₃ gas (99.999% purity) cylinder in Example 1, under the preparationconditions shown in Table 25 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse . image andpeeling in the same manner as in Example 1.

EXAMPLE 27

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 6 by further using SiF₄ from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 26 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 6.

EXAMPLE 28

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 9 by further using B₂ H₆ lH₂ gas in theupper layer, under the preparation conditions shown in Table 27 and,when evaluated in the same manner, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example9.

EXAMPLE 29

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 11 by further using PH₃ /H₂ gas in theupper layer, under the preparation conditions shown in Table 28 and,when evaluated in the same manner, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example11.

EXAMPLE 30

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by replacing the PH₃ /H₂ gas cylinderwith a He gas (99.999% purity) cylinder and further using N₂ gas fromnot illustrated cylinder in the Example 1, under the preparationconditions shown in Table 29 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 1.

EXAMPLE 31

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by further using PH₃ /H₂ gas, C₂ H₂ gasand SiF₄ gas in the upper layer, under the preparation conditions shownin Table 30 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 1.

EXAMPLE 32

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 6 by further using SiF₄ gas from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 31 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 6.

EXAMPLE 33

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by further using B₂ H₆ lH₂ and C₂ H₂ gasin the upper layer, under the preparation conditions shown in Table 32and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 1.

EXAMPLE 34

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by further using PH₃ /H₂ gas and C₂ H₂gas in the upper layer, under the preparation conditions shown in Table33 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 1.

EXAMPLE 35

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by further using PH₃ /H₂ and C₂ H₂ gas,SiF₄ gas and H₂ S gas in the upper layer, under the preparationconditions shown in Table 34 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 1.

EXAMPLE 36

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by further using B₂ H₆ gas upon formingthe lower layer in Example 1, under the preparation conditions as shownin Table 35.

COMPARATIVE EXAMPLE 2

A light receiving member for use in electrophotography was preparedunder the same preparation conditions as those in Example 36 except fornot using gas and H₂ gas upon forming the lower layer. The conditionsfor preparing the light receiving member for use in electrophotographyare shown in Table 36.

The light receiving members for use in electrophotography thus preparedin Example 36 and Comparative Example 2 were set respectively to anelectrophotographic apparatus, i.e., a copying machine NP-7550manufactured by Canon Inc. and modified for experimental use and, whenseveral electrophotographic properties were checked under variousconditions, it was found that both of them had outstandingcharacteristics with voltage withstanding property in that no imagedefects were formed even if a high voltage was applied to the lightreceiving member for use in electrophotography by highly intensivecorona discharge or frictional discharge by means of a cleaning agent.

Then, when the number of dots as the image characteristics werecompared, it was found that the number of dots, particularly, the numberof dots with less than 0.1 mm diameter of the light receiving member foruse in electrophotography of Example 24 was less than 3/4 of that of thelight receiving member for use in electrophotography in ComparativeExample 2. In addition, for comparing the "coarse image" , when theimage density was measured for circular regions each of 0.05 mm diameterassumed as one unit at 100 points and the scattering in the imagedensity was evaluated, it was found that the scattering in the lightreceiving member for use in electrophotography of Example 36 was lessthan 1/2 for that of the light receiving member for use inelectrophotography in Comparative Example 2, and the light receivingmember for use in electrophotography of Example 1 was excellent over thelight receiving member for use in Electrophotography of ComparativeExample in view of the visual observation.

EXAMPLE 37

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 except for changing the way of varyingthe AlCl₃ /He gas flow rate in the lower layer, under the preparationconditions shown in Table 37 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 36.

EXAMPLE 38

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 except for not using the CH₄ gas in theupper layer of Example 36, under the preparation conditions shown inTable 38 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 36.

EXAMPLE 39

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 except for replacing the PH₃ /H₂ gascylinder with a He gas (99.9999% purity) cylinder and, further, usingSiF₄ gas and N₂ gas from cylinder not illustrated, under the preparationconditions shown in Table 39 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 36.

EXAMPLE 40

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 except for replacing the B₂ H₆ 1H₂ gascylinder with an Ar gas (99.9999% purity) cylinder and, furtherreplacing the NO gas cylinder with a NH₃ gas (99.999% purity) cylinder,under the preparation conditions shown in Table 40 and, when evaluatedin the same manner, satisfactory improvement was obtained to the dots,coarse image and peeling in the same manner as in Example 36.

EXAMPLE 41

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 by further using PH₃ /H₂ gas and C₂ H₂gas in the upper layer, under the preparation conditions shown in Table41 and, when evaluated in the same manner, satisfactory improvement wasobtained to dots, coarse image and peeling in the same manner as inExample 36.

EXAMPLE 42

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 by further using SiF₄ gas from a notillustrated cylinder in the upper layer under the preparation conditionsshown in Table 42, and, when evaluated in the same manner, satisfactoryimprovement was obtained to dots, coarse image and peeling in the samemanner as in Example 36.

EXAMPLE 43

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 by further using N₂ gas from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 43 and, when evaluated in the same manner,satisfactory improvement was obtained to dots, coarse image and peelingin the same manner as in Example 36.

EXAMPLE 44

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 except for replacing the CH₄ gascylinder with a C₂ H₂ gas (99.9999% purity) cylinder in Example 36,under the preparation conditions shown in Table 44 and, when evaluatedin the same manner, satisfactory improvement was obtained to the dots,coarse image and peeling in the same manner as in Example 36.

EXAMPLE 45

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 by replacing the NO gas cylinder with aN₂ gas cylinder in Example 36, under the preparation conditions shown inTable 45 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 36.

EXAMPLE 46

A light receiving member for use in electrophotography prepared in thesame manner as in Example 36 by replacing the NO gas cylinder with a NH₃gas (99.999% purity) cylinder in Example 36, under the preparationconditions shown in Table 46 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 36.

EXAMPLE 47

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 41 by further using SiF₄ gas from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 47 and, when evaluated in the same manner,satisfactory improvement was obtained to dots, coarse image and peelingin the same manner as in Example 41.

EXAMPLE 48

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 44 by further using Bphd 2H₆ /H₂ gas inthe upper layer, under the preparation conditions shown in Table 48 and,when evaluated in the same manner, satisfactory improvement was obtainedto dots, coarse image and peeling in the same manner as in Example 44.

EXAMPLE 49

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 46 by further using PH₃ /H₂ gas in theupper layer, under the preparation conditions shown in Table 49 and,when evaluated in the same manner, satisfactory improvement was obtainedto dots, coarse image and peeling in the same manner as in Example 46.

EXAMPLE 50

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 by further using GeH₄ from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 50 and, when evaluated in the same manner,satisfactory improvement was obtained to dots, coarse image and peelingin the same manner as in Example 36.

EXAMPLE 51

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by changing the outer diameter of thecylindrical aluminum support to 80 mm in Example 36, under thepreparation conditions shown in Table 51 and, when evaluated in the samemanner as in Example 36, except for using an electrophotographicapparatus, i.e., a copying machine NP-9030 manufactured by Canon Inc.and modified for the experimental use, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 36.

EXAMPLE 52

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 by changing the outer diameter of thecylindrical aluminum support to 60 mm in Example 36, under thepreparation conditions shown in Table 52 and, when evaluated in the samemanner as in Example 36, except for using an electrophotographicapparatus, i.e., a copying machine NP-150Z manufactured by Canon Inc.and modified for the experimental use, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 36.

EXAMPLE 53

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 by changing the outer diameter of thecylindrical aluminum support to 30 mm in Example 36, under thepreparation conditions shown in Table 53 and, when evaluated in the samemanner as in Example 36, except for using an electrophotographicapparatus, i.e , a copying machine FC-5 manufactured by Canon Inc. andmodified for the experimental use, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example36.

EXAMPLE 54

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 by changing the outer diameter of thecylindrical aluminum support to 15 mm in Example 36, under thepreparation conditions shown in Table 54, and evaluated in the samemanner as in Example 36, except for using an electrophotographicapparatus, manufactured for experimental use, satisfactory improvementwas obtained to the dots, coarse image and peeling in the same manner asin Example 36.

EXAMPLE 55

A light sensitive member for use in electrophotography was prepared,under the same preparation conditions as those in Example 51 by using acylindrical aluminum support applied with mirror-finishing fabricationin Example 51 and further machined into a cross sectional shape of : a=25 um, b =0.8 um as shown in FIG. 38 by a diamond point tool and, whenevaluated in the same manner as in Example 51, satisfactory improvementwas obtained to, the dots, coarse image and peeling in the same manneras in Example 51.

EXAMPLES 56, 57

A light receiving member for use in electrophotography was prepared,under the same preparation conditions as those in Example 51 using acylindrical aluminum support applied with mirror-finish fabrication andsubsequently applied with a so-called surface dimpling of causing anumber of hit pits to the surface of the cylindrical aluminum support bythe exposure to a plurality of dropping bearing balls to form into across sectional shape of : c =50 um and d =1 um as shown in FIG. 39 and,when evaluated in the same manner as in Example 56, satisfactoryimprovement was be obtained for the dots, coarse image and peeling inthe same as in Example 51.

EXAMPLE 58

A light receiving member for use in electrophotography was prepared bymicrowave glow discharge decomposition in the same manner as in Example23 by further using B₂ H₆ gas upon forming the lower layer in Example23, under the preparation conditions shown in Table 56.

When the light receiving member for use in electrophotography wasevaluated in the same manner as in Example 36, satisfactory improvementwas obtained to the dots, coarse image and peeling in the same manner asin Example 36.

EXAMPLE 59

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 by replacing the CH₄ gas cylinder witha C₂ H₂ gas (99.9999% purity) cylinder in Example 36, under thepreparation conditions shown in Table 57 and, when evaluated in the samemanner, satisfactory improvement was obtained to the dots, coarse imageand peeling in the same manner as in Example 36.

EXAMPLE 60

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 by replacing the No gas cylinder with aN₂ gas cylinder in Example 36, under the preparation conditions shown inTable 58 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 36.

EXAMPLE 61

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 by replacing the NO gas cylinder with aNH₃ gas (99.999% purity) cylinder in Example 36, under the preparationconditions shown in Table 59 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 36.

EXAMPLE 62

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 41 by further using SiF₄ gas from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 60 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 41.

EXAMPLE 63

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 44 by further using B₂ H₆ 1H₂ gas in theupper layer, under the preparation conditions shown in Table 61 and,when evaluated in the same manner, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example44.

EXAMPLE 64

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 46 by further using PH₃ /H₂ gas in theupper layer, under the preparation conditions shown in Table 62 and,when evaluated in the same manner, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example46.

EXAMPLE 65

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 by replacing the PH₃ /H₂ gas cylinderwith a He gas (99.999% purity) cylinder and further using N₂ gas from anot illustrated cylinder in the Example 36, under the preparationconditions shown in Table 63 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 36.

EXAMPLE 66

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 by further using PH₃ /H₂ gas, C₂ H₂ gasand SiF₄ gas in the upper layer, under the preparation conditions shownin Table 64 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 36.

EXAMPLE 67

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 41 by further using SiF₄ gas from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 65 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 41.

EXAMPLE 68

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 by further using B₂ H₆ /H₂ and C₂ H₂gas in the upper layer, under the preparation conditions shown in Table66 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 36.

EXAMPLE 69

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 by further using PH₃ /H₂ gas and C₂ H₂gas in the upper layer, under the preparation conditions shown in Table67 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 36.

EXAMPLE 70

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 36 by further using PH₃ /H₂ and C₂ H₂ gas,SiF₄ gas and H₂ S gas in the upper layer, under the preparationconditions shown in Table 68 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 36.

EXAMPLE 71

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by further using NO gas upon forming thelower layer in Example 1, under the preparation conditions as shown inTable 69.

COMPARATIVE EXAMPLE 3

A light receiving member for use in electrophotography was preparedunder the same preparation conditions as those in Example 71 except fornot using H₂ gas and NO gas upon forming the lower layer. The conditionsfor preparing the light receiving member for use in electrophotographyare shown in Table 70.

The light receiving members for use in electrophotography thus preparedin Example 36 and Comparative Example 2 were set respectively to anelectrophotographic apparatus, i.e., a copying machine NP-7550manufactured by Canon Inc. and modified for experimental use and, whenseveral electrophotographic properties were checked under variousconditions, it was found that both of them had outstandingcharacteristics with voltage withstanding property in that no imagedefects were formed even if a high voltage was applied to the lightreceiving member for use in electrophotography by highly intensivecorona discharge or frictional discharge by means of a cleaning agent.

Then, when the number of dots as the image characteristics werecompared, it was found that the number of dots, particularly, the numberof dots with less than 0.1 mm diameter of the light receiving member foruse in electrophotography of Example 71 was less than 3/4 of that of thelight receiving member for use in electrophotography in ComparativeExample 3. In addition, for comparing the "coarse image" , when theimage density was measured for circular regions each of 0.05 mm diameterassumed as one unit at 100 points and the scattering in the imagedensity was evaluated, it was found that the scattering in the lightreceiving member for use in electrophotography of Example 71 was lessthan 1/2 for that of the light receiving member for use inelectrophotography in Comparative Example 3, and the light receivingmember for use in electrophotography of Example 71 was excellent overthe light receiving member for use in Electrophotography of ComparativeExample 3 in view of the visual observation.

In addition, for comparing the occurrence of image defects and thepeeling of the light receiving layer due to impactive mechanicalpressure applied for a relatively short period of time to the lightreceiving member for use in electrophotography, when stainless steelballs of 3.5 mm diameter were fallen freely from the vertical height of30 cm above the surface of the light receiving member for use inelectrophotography and abutted against the surface of the lightreceiving member for use in electrophotography, to thereby measure thefrequency of occurrence for cracks in to the light receiving layer, itwas found that the rate of occurrence in the light receiving member foruse in electrophotography of Example 71 was less than 2/5 for that inthe light receiving member for use in electrophotography of ComparativeExample 3.

As has been described above, the light receiving member for use inelectrophotography of Example 71 was superior to the light receivingmember for use in electrophotography of Comparative Example 3.

EXAMPLE 72

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 except for changing the way of varyingthe AlCl₃ /He gas flow rate in the lower layer and using B₂ H₆ gas inthe upper layer, under the preparation conditions shown in Table 71 and,when evaluated in the same manner, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example71.

EXAMPLE 73

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 except for not using the CH₄ gas in theupper layer of Example 71, under the preparation conditions shown inTable 72 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 71.

EXAMPLE 74

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by replacing the PH₃ /H₂ gas cylinderwith the He gas (99.9999% purity) cylinder and, further, using SiF₄ gasand N₂ gas from cylinders not illustrated in Example 71, under thepreparation conditions shown in Table 73 and, when evaluated in the samemanner, satisfactory improvement was obtained to the dots, coarse imageand peeling in the same manner as in Example 71.

EXAMPLE 75

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by replacing the B₂ H₆ /H₂ gas cylinderwith an Ar gas (99.9999% purity) cylinder and replacing the NO gascylinder with a NH₃ gas (99.999% purity) cylinder in Example 71, underthe preparation conditions shown in Table 74 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 71.

EXAMPLE 76

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by further using pH₃ /H₂ and C₂ H₆ gasin the upper layer, under the preparation conditions shown in Table 75and, when evaluated in the same manner, satisfactory improvement wasobtained to dots, coarse image and peeling in the same manner as inExample 71.

EXAMPLE 77

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by further using SiF₄ gas from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 76 and, when evaluated in the same manner,satisfactory improvement was obtained to dots, coarse image and peelingin the same manner as in Example 71.

EXAMPLE 78

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by further using N₂ gas and H₂ S gasfrom a not illustrated cylinder in the Example 71, under the preparationconditions shown in Table 77, and, when evaluated in the same manner,satisfactory improvement was obtained to dots, coarse image and peelingin the same manner as in Example 1.

EXAMPLE 79

receiving member for use in electrophotography was prepared in the samemanner as in Example 71 by replacing the CH₄ gas cylinder with a C₂ H₂gas (99.9999% purity) cylinder in Example 71, under the preparationconditions shown in Table 78 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 71.

EXAMPLE 80

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by replacing the NO gas cylinder with aN₂ gas cylinder and, further using the H₂ S gas from cylinder notillustrated in Example 71, under the preparation conditions shown inTable 79 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 71.

EXAMPLE 81

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by replacing the NO gas cylinder with aNH₃ gas (99.999% purity) cylinder in Example 71, under the preparationconditions shown in Table 80 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 71.

EXAMPLE 82

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 76 by further using SiF₄ gas from a notillustrated cylinder and replacing C₂ H₂ gas cylinder with CH₄ gascylinder in the upper layer, under the preparation conditions shown inTable 82 and, when evaluated in the same manner, satisfactoryimprovement was obtained to dots, coarse image and peeling in the samemanner as in Example 79.

EXAMPLE 83

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 79 by using Si₂ F₄ gas from a notillustrated cylinder and further using B₂ H₆ /H₂ gas in the upper layer,under the preparation conditions shown in Table 82 and, when evaluatedin the same manner, satisfactory improvement was obtained to dots,coarse image and peeling in the same manner as in Example 79.

EXAMPLE 84

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 81 by further using PH₃ /H₂ gas in theupper layer, under the preparation conditions shown in Table 83 and,when evaluated in the same manner, satisfactory improvement was obtainedto dots, coarse image and peeling in the same manner as in Example 81.

EXAMPLE 85

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by further using GeH₄ from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 84 and, when evaluated in the same manner,satisfactory improvement was obtained to dots, coarse image and peelingin the same manner as in Example 71.

EXAMPLE 86

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by changing the outer diameter of thecylindrical aluminum support to 80 mm in Example 71, under thepreparation conditions shown in Table 85 and, when evaluated in the samemanner as in Example 71, except for using an electrophotographicapparatus, i.e., a copying machine NP-9030 manufactured by Canon Inc.and modified for the experimental use, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 71.

EXAMPLE 87

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by changing the outer diameter of thecylindrical aluminum support to 60 mm in Example 71, under thepreparation conditions shown in Table 86 and, when evaluated in the samemanner as in Example 71, except for using an electrophotographicapparatus, i.e., a copying machine NP-150Z manufactured by Canon Inc.and modified for the experimental use, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 71.

EXAMPLE 88

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by changing the outer diameter of thecylindrical aluminum support to 30 mm in Example 71, under preparationconditions shown in Table 87 and, when evaluated in the same manner asin Example 71, except for using an electrophotographic apparatus, i.e.,a copying machine FC-5 manufactured by Canon Inc. and modified for theexperimental use, satisfactory improvement was obtained to the dots,coarse image and peeling in the same manner as in Example 71.

EXAMPLE 89

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by changing the outer diameter of thecylindrical aluminum support to 15 mm in Example 71, under thepreparation conditions shown in Table 88, and evaluated in the samemanner as in Example 71, except for using an electrophotographicapparatus, manufactured for experimental use, satisfactory improve wasobtained to the dots, coarse image and peeling in the same manner as inExample 71.

EXAMPLE 90

A light sensitive member for use in electrophotography was prepared,under the same preparation conditions as those in Example 86 by using acylindrical aluminum support applied with mirror-finishing fabricationin Example 86 and further machined into a cross sectional shape of:a =25um, b=0.8 um as shown in FIG. 38 by a diamond point tool and, whenevaluated in the same manner as in Example 86, satisfactory improvementwas obtained to, the dots, coarse image and peeling in the same manneras in Example 86.

EXAMPLE 91

A light receiving member for use in electrophotography was prepared,under the same preparation conditions as those in Example 86 using acylindrical aluminum support applied with mirror-finish fabrication andsubsequently applied with a so-called surface dimpling of causing anumber of hit pits to the surface of the cylindrical aluminum support bythe exposure to a plurality of dropping bearing balls to form into across sectional shape of c=50 um and d=1 um as shown in FIG. 39 and,when evaluated in the same manner as in Example 86, satisfactoryimprovement was be obtained for the dots, coarse image and peeling inthe same as in Example 86.

EXAMPLE 92

A light receiving member for use in electrophotography having an upperlayer comprising poly-Si(H, X) was prepared in the same manner as inExample 79 by using a cylindrical aluminum support heated to atemperature of 500° C., the preparation conditions as shown in Table 89and, when evaluated in the same manner, satisfactory improvement wasobtained to dots, coarse image and peeling in the same manner as inExample 79.

EXAMPLE 93

A light receiving member for use in electrophotography was prepared bymicrowave glow discharge decomposition in the same manner as in Example23 by further using NO gas and B gas upon forming the lower layer inExample 23, under the preparation conditions shown in Table 90.

When the light receiving member for use in electrophotography wasevaluated in the same manner as in Example 71, satisfactory improvementwas obtained to the dots, coarse image and peeling in the same manner asin Example 71.

EXAMPLE 94

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by replacing the CH₄ gas cylinder witha C₂ H₂ gas (99.9999% purity) cylinder in Example 71, under thepreparation conditions shown in Table 91 and, when evaluated in the samemanner, satisfactory improvement was obtained to the dots, coarse imageand peeling in the same manner as in Example 71.

EXAMPLE 95

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by replacing the No gas cylinder with aN₂ gas cylinder in Example 71, under the preparation conditions shown inTable 92 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 71.

EXAMPLE 96

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by replacing the NO gas cylinder with aNH₃ gas (99.999% purity) cylinder in Example 71, under the preparationconditions shown in Table 93 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 71.

EXAMPLE 97

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 76 by further using SiF₄ from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 94 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 76.

EXAMPLE 98

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 79 by replacing SiH₄ gas cylinder with Si₂H₆ gas cylinder and further using gas in the upper layer, under thepreparation conditions shown in Table 95 and, when evaluated in the samemanner, satisfactory improvement was obtained to the dots, coarse imageand peeling in the same manner as in Example 79.

EXAMPLE 99

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 81 by further using PH₃ /H₂ gas in theupper layer, under the preparation conditions shown in Table 96 and,when evaluated in the same manner, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example81.

EXAMPLE 100

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by replacing the PH₃ /H₂ gas cylinderwith a He gas (99.999% purity) cylinder and further using N₂ gas from anot illustrated cylinder in the Example 71, under the preparationconditions shown in Table 97 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 71.

EXAMPLE 101

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by further using C gas and SiF₄ gasfrom a not illustrated cylinder in the upper layer, under thepreparation conditions shown in Table 98 and, when evaluated in the samemanner, satisfactory improvement was obtained to the dots, coarse imageand peeling in the same manner as in Example 11.

EXAMPLE 102

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 101 by further using SiF₄ gas from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 99 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 101.

EXAMPLE 103

A light receiving member for us in electrophotography was prepared inthe same manner as in Example 106 by using B₂ /H₆ /H₂ and further usingC₂ H₂ gas from a not illustrated cylinder, under the preparationconditions shown in Table 100 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 106.

EXAMPLE 104

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by using PH₃ /H₂ and further using C₂H₂ gas from a not illustrated cylinder, under the preparation conditionsshown in Table 101 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 71.

EXAMPLE 105

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 71 by using C₂ H₂ gas, SiF₄ gas and H₂ Sgas from a not illustrated cylinder, under the preparation conditionsshown in Table 102 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 71.

EXAMPLE 106

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 79 by using C₂ H₂ gas and SiF₄ gas from anot illustrated cylinder, under the preparation conditions shown inTable 103 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 79.

EXAMPLE 107

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106, under the preparation conditionsshown in Table 104, and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 106.

EXAMPLE 108

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106, under the preparation conditionsshown in Table 105 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 106.

EXAMPLE 109

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106, under the preparation conditionsshown in Table 106 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 106.

EXAMPLE 110

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106, under the preparation conditionsshown in Table 107 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 106.

EXAMPLE 111

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106, under the preparation conditionsshown in Table 108 and, when evaluated in the same manner, satisfactoryimprovement was . obtained to the dots, coarse image and peeling in thesame manner as in Example 106.

EXAMPLE 112

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106, under the preparation conditionsshown in Table 109 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 106.

EXAMPLE 113

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106, under the preparation conditionsshown in Table 110 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 106.

EXAMPLE 114

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106, under the preparation conditionsshown in Table 111 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 106.

EXAMPLE 115

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106 by further using PH₃ gas from a notillustrated cylinder, under the preparation conditions shown in Table112 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 106.

EXAMPLE 116

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 115, under the preparation conditionsshown in Table 113 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 115.

EXAMPLE 117

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106 by further using H₂ S gas from a notillustrated cylinder, under the preparation conditions shown in Table114 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 106.

EXAMPLE 118

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106, under the preparation conditionsshown in Table 114 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 106.

EXAMPLE 119

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106, under the preparation conditionsshown in Table 116 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 106.

EXAMPLE 120

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106 by further using NH₃ gas from a notillustrated cylinder, under the preparation conditions shown in Table117 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 106.

EXAMPLE 121

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106 by further using N₂ gas from a notillustrated cylinder, under the preparation conditions shown in Table118 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 106.

EXAMPLE 122

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106, under the preparation conditionsshown in Table 119 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 106.

EXAMPLE 123

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106, under the preparation conditionsshown in Table 120 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 106.

EXAMPLE 124

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 115, under the preparation conditionsshown in Table 121 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 115.

EXAMPLE 125

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 106, under the preparation conditionsshown in Table 122 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 106.

EXAMPLE 126

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by further using SiF₄ gas and NO gasupon forming the lower layer in Example 1, under the preparationconditions shown in Table 123.

COMPARATIVE EXAMPLE 4

A light receiving member for use in electrophotography was preparedunder the same preparation conditions as those in Example 126 except fornot using SiF₄ gas, NO gas and H₂ gas upon forming the lower layer. Theconditions for preparing the light receiving member for use in electrophotography are shown in Table 124.

The light receiving members for use in electrophotography thus preparedin Example 126 and Comparative Example 4 were set respectively to anelectrophotographic apparatus, i.e., a copying machine NP-7550manufactured by Canon Inc. and modified for experimental use and, whenseveral electrophotographic properties were checked under variousconditions, it was found that both of them had outstandingcharacteristics with voltage withstanding property in that no imagedefects were formed even if a high voltage was applied to the lightreceiving member for use in electrophotography by highly intensivecorona discharge or frictional discharge by means of a cleaning agent.

Then, when the number of dots as the image characteristics werecompared, it was found that the number of dots, particularly, the numberof dots with less than 0.1 mm diameter of the light receiving member foruse in electrophotography of Example 71 was less than half of that ofthe light receiving member for use in electrophotography in ComparativeExample 3. In addition, for comparing the "coarse image", when the imagedensity was measured for circular regions each of 0.05 mm diameterassumed as one unit at 100 points and the scattering in the imagedensity was evaluated, it was found that the scattering in the lightreceiving member for use in electrophotography of Example 126 was lessthan 1/2 for that of the light receiving member for use inelectrophotography in Comparative Example 4, and the light receivingmember for use in electrophotography of Example 126 was excellent overthe light receiving member for use in Electrophotography of ComparativeExample 4 in view of the visual observation.

In addition, for comparing the occurrence of image defects and thepeeling of the light receiving layer due to impactive mechanicalpressure applied for a relatively short period of time to the lightreceiving member for use in electrophotography, when stainless steelballs of 3.5 mm diameter were fallen freely from the vertical height of30 cm above the surface of the light receiving member for use inelectrophotography and abutted against the surface of the lightreceiving member for use in electrophotography, to thereby measure thefrequency of occurrence for cracks in the light receiving layer, it wasfound that the rate of occurrence in the light receiving member for usein electrophotography of Example 126 was less than 2/5 for that in thelight receiving member for use in electrophotography of ComparativeExample 4.

As has been described above, the light receiving member for use inelectrophotography of Example 126 was superior to the light receivingmember for use in electrophotography of Comparative Example 4.

EXAMPLE 127

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by not using the NO gas and changingthe way of varying the AlCl₃ /He gas flow rate in the lower layer ofExample 126, under the preparation conditions shown in Table 125 and,when evaluated in the same manner, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example126.

EXAMPLE 128

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by not using the CH₄ gas in Example126, under the preparation conditions shown in Table 126 and, whenevaluated in the same manner, satisfactory improvement was obtained tothe dots, coarse image and peeling in the same manner as in Example 71.

EXAMPLE 129

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by further using He gas (99.9999%purity) from a not illustrated cylinder in Example 126, under thepreparation conditions shown in Table 127 and when evaluated in the samemanner, satisfactory improvement was obtained to the dots, coarse imageand peeling in the same manner as in Example 71.

EXAMPLE 130

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by replacing the B₂ H₆ /H₂ gas withdiluted H₂ gas (99.999% purity, hereinafter simply referred to as PH₃/H₂) cylinder, replacing the NO gas cylinder with NH₃ gas (99.999%purity) cylinder in Example 126, under the preparation conditions shownin Table 128 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 126.

EXAMPLE 131

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by further using C₂ H₂ gas from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 129 and, when evaluated in the same manner,satisfactory improvement was obtained to dots, coarse image and peelingin the same manner as in Example 126.

EXAMPLE 132

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by further using PH₃ /H₂ gas from anot illustrated cylinder, under the preparation conditions shown inTable 130 and, when evaluated in the same manner, satisfactoryimprovement was obtained to dots, coarse image and peeling in the samemanner as in Example 126.

EXAMPLE 133

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by further using N₂ gas, H₂ S and PH₃/H₂ gas from a not illustrated cylinder in the Example 126, under thepreparation conditions shown in Table 131 and, when evaluated in thesame manner, satisfactory improvement was obtained to dots, coarse imageand peeling in the same manner as in Example 126.

EXAMPLE 134

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by replacing the CH₄ gas cylinder witha C₂ H₂ gas (99.9999% purity) cylinder in Example 126, under thepreparation conditions shown in Table 132 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 126.

EXAMPLE 135

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by replacing the B₂ H₆ /H₂ gascylinder with H₂ -diluted BF₃ gas (99.999% purity, hereinafter simplyreferred to as PH₃ /H₂) cylinder, replacing the NO gas cylinder with aN₂ gas (99.999% purity) cylinder and using H₂ S gas from a notillustrated cylinder in Example 126, under the preparation conditionsshown in Table 133 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 126.

EXAMPLE 136

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by replacing the NO gas cylinder witha NH₃ gas (99.999% purity) cylinder in Example 126, under thepreparation conditions shown in Table 134, and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 71.

EXAMPLE 137

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 131 by further using the hydrogengas-diluted PF₅ gas (99.999% purity, hereinafter simply referred to asPF₃ /H₂) from a not illustrated cylinder and PH₃ /H₂ gas, replating theG₂ H₂ gas cylinder with CH₄ gas cylinder, under the preparationconditions shown in Table 135 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 131.

EXAMPLE 138

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 136 by using a not illustrated Si₂ F₆ gascylinder, under the preparation conditions shown in Table 136 and, whenevaluated in the same manner, satisfactory improvement was obtained tothe dots, coarse image and peeling in the same manner as in Example 134.

EXAMPLE 139

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 136 by further using PH₃ /H₂ gas and Si₂F₄ gas, under the preparation conditions shown in Table 137 and, whenevaluated in the same manner, satisfactory improvement was obtained todots, coarse image and peeling in the same manner as in Example 136.

EXAMPLE 140

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by further using GeH₄ from a notillustrated cylinder in the upper layer, under the preparationconditions shown in Table 138 and, when evaluated in the same manner,satisfactory improvement was obtained to dots, coarse image and peelingin the same manner as in Example 126.

EXAMPLE 141

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by changing the outer diameter of thecylindrical aluminum support to 80 mm in Example 126, under thepreparation conditions shown in Table 139 and, when evaluated in thesame manner as in Example 126, except for using an electrophotographicapparatus, i.e., a copying machine NP-9030 manufactured by Canon Inc.and modified for the experimental use, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 71.

EXAMPLE 142

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by changing the outer diameter of thecylindrical aluminum support to 60 mm in Example 126, under thepreparation conditions shown in Table 140 and, when evaluated in thesame manner as in Example 126, except for using an electrophotographicapparatus, i.e., a copying machine NP-150Z manufactured by Canon Inc.and modified for the experimental use, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 126.

EXAMPLE 143

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by changing the outer diameter of thecylindrical aluminum support to 30 mm in Example 126, under thepreparation conditions shown in Table 141 and, when evaluated in thesame manner as in Example 126, except for using an electrophotographicapparatus, i.e., a copying machine FC-5 manufactured by Canon Inc. andmodified for the experimental use, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example126.

EXAMPLE 144

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by changing the outer diameter of thecylindrical aluminum support to 15 mm in Example 126, under thepreparation conditions shown in Table 142, and evaluated in the samemanner as in Example 126, except for using an electrophotographicapparatus, manufactured for experimental use, satisfactory improvementwas obtained to the dots, coarse image and peeling in the same manner asin Example 126.

EXAMPLE 145

A light sensitive member for use in electrophotography was prepared,under the same preparation conditions as those in Example 141 by using acylindrical aluminum support applied with mirror-finishing fabricationin Example 141 and further machined into a cross sectional shape of :a=25 um, b=0.8 um as shown in FIG. 38 by a diamond point tool and, whenevaluated in the same manner as in Example 141, satisfactory improvementwas obtained to, the dots, coarse image and peeling in the same manneras in Example 141.

EXAMPLE 146

A light receiving member for use in electrophotography was prepared,under the same preparation conditions as those in Example 141 using acylindrical aluminum support applied with mirror-finish fabrication andsubsequently applied with a so-called surface dimpling of causing anumber of hit pits to the surface of the cylindrical aluminum support bythe exposure to a plurality of dropping bearing balls to form into across sectional shape of : c=50 um and d=1 um as shown in FIG. 39 and,when evaluated in the same manner as in Example 141, satisfactoryimprovement was be obtained for the dots, coarse image and peeling inthe same as in Example 141.

EXAMPLE 147

A light receiving member for use in electrophotography having an upperlayer comprising poly-Si(H, X) was prepared in the same manner as inExample 134 by using a cylindrical aluminum support heated to atemperature of 500° C., under the preparation conditions as shown inTable 143 and, when evaluated in the same manner, satisfactoryimprovement was obtained to dots, coarse image and peeling in the samemanner as in Example 134.

EXAMPLE 148

A light receiving member for use in electrophotography was prepared bymicrowave glow discharge decomposition in the same manner as in Example23 by further using SiF₄ gas, No gas and B₂ H₆ gas in Example 23, underthe same preparation conditions as shown in Table 144.

When the light receiving member for use in electrophotography wasevaluated in the same manner as in Example 126. satisfactory improvementwas obtained to the dots, coarse image and peeling in the same manner asin Example 126.

EXAMPLE 149

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by replacing the CH₄ gas cylinder witha C₂ H₂ gas (99.9999% purity) cylinder in Example 126, under thepreparation conditions shown in Table 145 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 126.

EXAMPLE 150

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by replacing the NO gas cylinder witha N₂ gas cylinder in Example 126, under the preparation conditions shownin Table 146 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 126.

EXAMPLE 151

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by using PF₅ gas and Si₂ F₆ gas from anot illustrated cylinder and replacing NO gas cylinder with a NH₃ gascylinder in Example 126, under the preparation conditions shown in Table147 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 126.

EXAMPLE 152

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 131 by further using PF₅ /H₂ gas from anot illustrated cylinder, under the preparation conditions shown inTable 148 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 131.

EXAMPLE 153

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 134, under the preparation conditionsshown in Table 149 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 134.

EXAMPLE 154

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 136 by further using PH₃ /H₂ gas, underthe preparation conditions shown in Table 150 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 136.

EXAMPLE 155

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by further using the He gas (99.999%purity) from a not illustrated cylinder in the Example 126, under thepreparation conditions shown in Table 151 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 126.

EXAMPLE 156

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by further using C₂ H₂ gas and PH₃ /H₂gas from a not illustrated cylinder, under the preparation conditionsshown in Table 151 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 126.

EXAMPLE 157

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 131 by further using PH₃ /H₂ gas from anot illustrated cylinder, under the preparation conditions shown inTable 153 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 131.

EXAMPLE 158

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by further using C₂ H₂ gas from a notillustrated cylinder, under the preparation conditions shown in Table154 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 126.

EXAMPLE 159

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 158 by further using C₂ H₂ gas and PH₃ /H₂from a not illustrated cylinder, under the preparation conditions shownin Table 155 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 158.

EXAMPLE 160

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 126 by further using C₂ H₂ gas, PF₃ /H₂gas and H₂ S gas from a not was prepared in the same manner as inExample 126 by further using C₂ H₂ gas, PF₃ /H₂ gas and H₂ S gas from anot illustrated cylinder, under the preparation conditions shown inTable 156 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 126.

EXAMPLE 161

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 134 by further using C₂ H₂ gas from a notillustrated cylinder, under the preparation conditions shown in Table134 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 134.

EXAMPLE 162

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161, under the preparation conditionsshown in Table 158, and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 161.

EXAMPLE 163

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161, under the preparation conditionsshown in Table 159, and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 161.

EXAMPLE 164

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161 by using BF₃ gas from a notillustrated cylinder, under the preparation conditions shown in Table160, and, when evaluated in the same manner, satisfactory improvementwas obtained to the dots, coarse image and peeling in the same manner asin Example 161.

EXAMPLE 165

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161, under the preparation conditionsshown in Table 161 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 161.

EXAMPLE 166

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161, under the preparation conditionsshown in Table 162 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 161.

EXAMPLE 167

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161, under the preparation conditionsshown in Table 163 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 161.

EXAMPLE 168

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161, under the preparation conditionsshown in Table 164 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 161.

EXAMPLE 169

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161, under the preparation conditionsshown in Table 165 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 161.

EXAMPLE 170

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161 by further using PH₃ gas and Si₂ F₆gas from a not illustrated cylinder, under the preparation conditionsshown in Table 166 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 161.

EXAMPLE 171

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 170, under the preparation conditionsshown in Table 167 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 170.

EXAMPLE 172

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161 by further using H₂ S gas from a notillustrated cylinder, under the preparation conditions shown in Table168 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 161.

EXAMPLE 173

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161, under the preparation conditionsshown in Table 169 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 161.

EXAMPLE 174

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161, under the preparation conditionsshown in Table 170 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 161.

EXAMPLE 175

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161 by further using NH₃ gas from a notillustrated cylinder, under the preparation conditions shown in Table171 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 161.

EXAMPLE 176

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161 by further using N₂ gas from a notillustrated cylinder, under the preparation conditions shown in Table172 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 161.

EXAMPLE 177

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161, under the preparation conditionsshown in Table 173 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 161.

EXAMPLE 178

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161, under the preparation conditionsshown in Table 174 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 161.

EXAMPLE 179

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 170, under the preparation conditionsshown in Table 175 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 170.

EXAMPLE 180

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 161, under the preparation conditionsshown in Table 176 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 161.

EXAMPLE 181

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 by further using GeH₄ gas upon formingthe lower layer in Example 1, under the same preparation conditions asshown in Table 177. COMPARATIVE EXAMPLE 5

A light receiving member for use in electrophotography was preparedunder the same preparation conditions as those in Example 181 except fornot using GeH₄ gas and H₂ gas upon forming the lower layer. Theconditions for preparing the light receiving member for use in electrophotography are shown in Table 178.

The light receiving members for use in electrophotography thus preparedin Example 181 and Comparative Example 5 were set respectively to anelectrophotographic apparatus, i.e., a copying machine NP-7550manufactured by Canon Inc. and modified for experimental use and, whenseveral electrophotographic properties were checked under variousconditions, it was found that both of them had outstandingcharacteristics with voltage withstanding property in that no imagedefects were formed even if a high voltage was applied to the lightreceiving member for use in electrophotography by highly intensivecorona discharge or frictional discharge by means of a cleaning agent.

Then, when the number of dots as the image characteristics werecompared, it was found that the number of dots, particularly, the numberof dots with less than 0.1 mm diameter of the light receiving member foruse in electrophotography of Example 181 was less than 2/5 of that ofthe light receiving member for use in electrophotography in ComparativeExample 5. In addition, for comparing the "coarse image", when the imagedensity was measured for circular regions each of 0.05 mm diameterassumed as one unit at 100 points and the scattering in the imagedensity was evaluated, it was found that the scattering in the lightreceiving member for use in electrophotography of Example 181 was lessthan 1/3 for that of the light receiving member for use inelectrophotography in Comparative Example 5, and the light receivingmember for use in electrophotography of Example 181 was excellent overthe light receiving member for use in Electrophotography of ComparativeExample 5 in view of the visual observation.

In addition, for comparing the occurrence of image defects and thepeeling of the light receiving layer due to impactive mechanicalpressure applied for a relatively short period of time to the lightreceiving member for use in electrophotography, when stainless steelballs of 3.5 mm diameter were fallen freely from the vertical height of30 cm above the surface of the light receiving member for use inelectrophotography and abutted against the surface of the lightreceiving member for use in electrophotography, to thereby measure thefrequency that cracks occurred to the light receiving layer, it wasfound that the rate of occurrence in the light receiving member for usein electrophotography of Example 181 was less than 1/3 for that in thelight receiving member for use in electrophotography of ComparativeExample 5.

When the lower layer of the light receiving member for use inelectrophotography of Example 181 was analyzed by using SIMS, it wasfound that the content of silicon atoms, hydrogen atoms and aluminumatoms in the direction of the film thickness was varied as desired.

As has been described above, the light receiving member for use inelectrophotography of Example 181 was superior to the light receivingmember for use in electrophotography of Comparative Example 5.

EXAMPLE 182

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by changing the way of varying theAlCl₃ /He gas flow rate in the lower layer, under the preparationconditions shown in Table 179, and when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 181.

EXAMPLE 183

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 not using the CH₄ gas in the upperlayer of Example 181, under the preparation conditions shown in Table180, and when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 181.

EXAMPLE 184

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by further using He gas (99.9999%purity) and N₂ gas from a not illustrated cylinder in Example 181, underthe preparation conditions shown in Table 181, and when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 71.

EXAMPLE 185

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by replacing the B₂ H₆ /H₂ gascylinder with hydrogen-diluted PH₃ gas (99.999% purity, hereinaftersimply referred to as PH₃ /H₂) cylinder, replacing the NO gas cylinderwith NH₃ gas (99.999% purity) cylinder in Example 181, under thepreparation conditions shown in Table 182, and when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 181.

EXAMPLE 186

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by further using C₂ H₂ gas from a notillustrated cylinder in Example 181, under the preparation conditionsshown in Table 183 and, when evaluated in the same manner, satisfactoryimprovement was obtained to dots, coarse image and peeling in the samemanner as in Example 181.

EXAMPLE 187

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by further using PH₃ /H₂ gas from anot illustrated cylinder, under the preparation conditions shown inTable 184 and, when evaluated in the same manner, satisfactoryimprovement was obtained to dots, coarse image and peeling in the samemanner as in Example 181.

EXAMPLE 188

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by further using N₂ gas, H₂ S (99.9%purity) and PH₃ /H₂ gas from a not illustrated cylinder in Example 181,under the preparation conditions shown in Table 185, and, when evaluatedin the same manner, satisfactory improvement was obtained to dots,coarse image and peeling in the same manner as in Example 181.

EXAMPLE 189

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by replacing the GeH₄ gas cylinderwith GeF₄ gas (99.999% purity), and replacing the CH₄ gas cylinder witha C₂ H₂ gas (99.9999% purity) cylinder in Example 181, under thepreparation conditions shown in Table 186 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 181.

EXAMPLE 190

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by replacing the B₂ H₆ /H₂ gascylinder with H₂ -diluted BF₃ gas (99.999% purity, hereinafter simplyreferred to as BF₃ /H₂) cylinder and replacing the NO gas cylinder withN₂ gas and also using H₂ S gas from a not illustrated cylinder inExample 181, under the preparation conditions shown in Table 187, andwhen evaluated in the same manner, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example181.

EXAMPLE 191

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by replacing cylinder in Example 181,under the preparation conditions shown in Table 188, and, when evaluatedin the same manner, satisfactory improvement was obtained to the dots,coarse image and peeling in the same manner as in Example 71.

EXAMPLE 192

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 186 by replacing the PF₅ gas diluted withhydrogen (99.999% purity, hereinafter simply referred to as PH₃ /H₂)from a not illustrated cylinder and further using B₂ H₆ /H₂ gas, underthe preparation conditions shown in Table 189, and when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 186.

EXAMPLE 193

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 189 by using Si₂ H₆ (99.99% purity), Si₂F₆ (99199% purity) gas, under the preparation conditions shown in Table190, and, when evaluated in the same manner, satisfactory improvementwas obtained to the dots, coarse image and peeling in the same manner asin Example 189.

EXAMPLE 194

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 191 by further using PF₅ /H₂ gas and Si₂F₆ gas, under the preparation conditions shown in Table 191 and, whenevaluated in the same manner, satisfactory improvement was obtained todots, coarse image and peeling in the same manner as in Example 191.

EXAMPLE 195

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by further using GeH₄ gas in the upperlayer, under the preparation conditions shown in Table 192 and, whenevaluated in the same manner, satisfactory improvement was obtained todots, coarse image and peeling in the same manner as in Example 181.

EXAMPLE 196

A light receiving member for use in electrophotography was in samemanner as prepared the in Example 181 by changing the outer diameter ofthe cylindrical aluminum support to 80 mm in Example 181, under thepreparation conditions shown in Table 193 and, when evaluated in thesame manner as in Example 181, except for using an electrophotographicapparatus, i.e., a copying machine NP-9030 manufactured by Canon Inc.and modified for experimental use, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example181.

EXAMPLE 197

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by changing the outer diameter of thecylindrical aluminum support to 60 mm in Example 181, under thepreparation conditions shown in Table 194 and, when evaluated in thesame manner as in Example 181, except for using an electrophotographicapparatus, i.e., a copying machine NP-150Z manufactured by Canon Inc.and modified for the experimental use, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 181.

EXAMPLE 198

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by changing the outer diameter of thecylindrical aluminum support to 30 mm in Example 181, under thepreparation conditions shown in Table 195 and, when evaluated in thesame manner as in Example 181, except for using an electrophotographicapparatus, i.e., a copying machine FC-5 manufactured by Canon Inc. andmodified for the experimental use, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example181.

EXAMPLE 199

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by changing the outer diameter of thecylindrical aluminum support to 15 mm in Example 181, under thepreparation conditions shown in Table 196, and evaluated in the samemanner as in Example 181, except for using an electrophotographicapparatus, manufactured for experimental use and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots coarseimage and peeling in the same manner as in Example 181.

EXAMPLE 200

A light sensitive member for use in electrophotography was prepared,under the same preparation conditions as those in Example 196 by using acylindrical aluminum support applied with mirror-finishing fabricationin Example 196 and further machined into a cross sectional shape of a=25um, b=0.8 um as shown in FIG. 38 by a diamond point tool and, whenevaluated in the same manner as in Example 196, satisfactory improvementwas obtained to, the dots, coarse image and peeling in the same manneras in Example 196.

EXAMPLE 201

A light receiving member for use in electrophotography was prepared,under the same preparation conditions as those in Example 196 using acylindrical aluminum support applied with mirror-finish fabrication andsubsequently applied with a so-called surface dimpling of causing anumber of hit pits to the surface of the cylindrical aluminum support bythe exposure to a plurality of dropping bearing balls to form into across sectional shape of: c=50 um and d=1 um as shown in FIG. 39 and,when evaluated in the same manner as in Example 196, satisfactoryimprovement was be obtained for the dots, coarse image and peeling inthe same as in Example 196.

EXAMPLE 202

A light receiving member for use in electrophotography in the samemanner as in Example 189 having an upper layer comprising poly-Si(H, X)was prepared by using a cylindrical aluminum support heated to atemperature of 500° C., under the preparation conditions as shown inTable 197 and, when evaluated in the same manner, satisfactoryimprovement was obtained to dots, coarse image and peeling in the samemanner as in Example 189.

EXAMPLE 203

A light receiving member for use in electrophotography was prepared bymicrowave glow discharge decomposition in the same manner as in Example23 by further using GeH₄ gas, B₂ H₆ gas and NO gas upon forming thelower layer in Example 23, under the same preparation conditions asshown in Table 198.

When the light receiving member for use in electrophotography wasevaluated in the same manner as in Example 181, satisfactory improvementwas obtained to the dots, coarse image and peeling in the same manner asin Example 181.

EXAMPLE 204

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by replacing the CH₄ gas cylinder witha C₂ H₂ gas (99.9999% purity) cylinder, and replacing GeH₄ gas cylinderwith a GeF₄ gas cylinder and further using Si₂ F₆ gas in Example 181,under the preparation conditions shown in Table 199 and, when evaluatedin the same manner, satisfactory improvement was obtained to the dots,coarse image and peeling in the same manner as in Example 181.

EXAMPLE 205

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181, under the preparation conditionsshown in Table 200 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 181.

EXAMPLE 206

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by using SnH₄ gas (99.99% purity), PF₅gas and Si₂ F₆ gas from a not illustrated cylinder and replacing NO gascylinder with a NH₃ gas cylinder in Example 181, under the preparationconditions shown in Table 201 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 181.

EXAMPLE 207

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 186 by further using PF₅ /H₂ gas and SiF₄gas from a not illustrated cylinder, under the preparation conditionsshown in Table 202 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 186.

EXAMPLE 208

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 189, under the preparation conditionsshown in Table 203 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 189.

EXAMPLE 209

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by further using PH₃ /H₂ gas, underthe preparation conditions shown in Table 204 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 181.

EXAMPLE 210

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by further using He gas and N₂ gasfrom a not illustrated cylinder, under the preparation conditions shownin Table 205 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 181.

EXAMPLE 211

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by further using C₂ H₂ gas, SiF₄ gasand PH₃ /H₂ gas from a not illustrated cylinder, under the preparationconditions shown in Table 206 and when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 181.

EXAMPLE 212

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 211 by further using PH₃ /H₂ gas and SiF₄gas from a not illustrated cylinder, under the preparation conditionsshown in Table 207 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 211.

EXAMPLE 213

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by further using C₂ H₂ gas from a notillustrated cylinder, under the preparation conditions shown in Table208 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 181.

EXAMPLE 214

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 213 by further using C₂ H₂ and SnH₄ gasfrom a not illustrated cylinder, under the preparation conditions shownin Table 209 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 213.

EXAMPLE 215

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by further using C₂ H₂ gas, PF₃ /H₂gas, H₂ S gas and SiF₄ gas from a not illustrated cylinder, under thepreparation conditions shown in Table 210 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 181.

EXAMPLE 216

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 189 by further using C₂ H₂ gas and SiF₄gas from a not illustrated cylinder, under the preparation conditionsshown in Table 211 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 189.

EXAMPLE 217

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216 by using SnH₄ gas from a notillustrated cylinder, under the preparation conditions shown in Table212, and, when evaluated in the same manner, satisfactory improvementwas obtained to the dots, coarse image and peeling in the same manner asin Example 216.

EXAMPLE 218

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216, under the preparation conditionsshown in Table 213 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 216.

EXAMPLE 219

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216 by using BF₃ gas from a notillustrated cylinder, under the preparation conditions shown in Table214, and, when evaluated in the same manner, satisfactory improvementwas obtained to the dots, coarse image and peeling in the same manner asin Example 216.

EXAMPLE 220

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216, under the preparation conditionsshown in Table 215 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 216.

EXAMPLE 221

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216, under the preparation conditionsshown in Table 216 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 216.

EXAMPLE 222

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216, under the preparation conditionsshown in Table 217 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 216.

EXAMPLE 223

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216, under the preparation conditionsshown in Table 218 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 216.

EXAMPLE 224

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216, under the preparation conditionsshown in Table 219 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 216.

EXAMPLE 225

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216 by further using PH₃ gas and Si₂ F₆gas from a not illustrated cylinder, under the preparation conditionsshown in Table 220 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 216.

EXAMPLE 226

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 225, under the preparation conditionsshown in Table 221 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 225.

EXAMPLE 227

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216 by further using H₂ S gas from a notillustrated cylinder, under the preparation conditions shown in Table222 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 216.

EXAMPLE 228

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216, under the preparation conditionsshown in Table 223 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 216.

EXAMPLE 229

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216, under the preparation conditionsshown in Table 224 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 216.

EXAMPLE 230

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216 by further using NH₃ gas from a notillustrated cylinder, under the preparation conditions shown in Table225 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 216.

EXAMPLE 231

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216 by further using N₂ gas from a notillustrated cylinder, under the preparation conditions shown in Table226 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 216.

EXAMPLE 232

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216, under the preparation conditionsshown in Table 227 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 216.

EXAMPLE 233

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216, under the preparation conditionsshown in Table 228 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 216.

EXAMPLE 234

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 225, under the preparation conditionsshown in Table 229 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 225.

EXAMPLE 235

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 216, under the preparation conditionsshown in Table 230 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 216.

EXAMPLE 236

The light receiving member for use in electrophotography according tothis invention was formed by radio frequency (hereinafter simplyreferred to as "RF") glow discharge decomposition.

FIG. 37 shows an apparatus for producing the light receiving member foruse in electrophotography by the RF glow discharge decomposition,comprising a raw material gas supply device 1020 and a deposition device1000.

In the figure, raw material gases for forming the respective layers inthis invention were tightly sealed in gas cylinders 1071, 1072, 1073,1074, 1075, 1076, 1077 and 1079, and tightly sealed vessels 1078 and1080 in which the cylinder 1071 was for SiH₄ gas (99.99% purity), thecylinder 1072 was for H₂ gas (99.9999%), the cylinder 1073 was for CH₄gas (99.999% purity), the cylinder 1074 was for GeH₄ gas (99.999%), thecylinder 1075 was for PH₃ gas diluted with H₂ gas (99.999% purity,hereinafter simply referred to as "PH₃ /H₂ "), the cylinder 1076 was forNO gas (99.9% purity), the cylinders 1077 and 1079 were for He gas(99.999% purity), the tightly sealed vessel 178 was charged with AlCl₃(99.999% purity) and the tightly sealed vessel 178 was charged withMg(C₅ H₅)₃ (99.999% purity).

In the figure, a cylindrical aluminum support 1005 had an outer diameterof 108 mm and a mirror-finished surface.

After confirming that valves 1051-1058 for the gas cylinders 1071-1077and 1079, flow-in valves 1031-1038 and a leak valve 1015 for thedeposition chamber 1001 were closed and flow-out valves 1041-1048 and anauxiliary valve 1018 were opened, a main valve 1016 was at first openedto evacuate the deposition chamber 1001 and gas pipeways by a vacuumpump not illustrated.

Then, when the indication of a vacuum meter 1017 showed about 1×10⁻³Torr, the auxiliary valve 1018, the flow-out valves 1041-1048 wereclosed.

Then, the valves 1051-1058 were opened to introduce SiH₄ from the gascylinder 1071, H₂ gas from the gas cylinder 1072, CH₄ gas from the gascylinder 1073, GeH₄ gas from the gas cylinder 1074, B₂ H₅ /H₂ gas fromthe gas cylinder 1075, NO gas from the gas cylinder 1076 and He gas fromthe gas cylinders 1077 and 1079, and the pressures for the respectivegases were adjusted to 2 kg/cm² by pressure controllers 1061-1068.

Then, the flow-in valves 1031-1038 were gradually opened to introducethe respective gases in mass flow controllers 1021-1028. In this case,since the He gas from the gas cylinder 1077 was passed through thetightly sealed vessel 1078 charged with AlCl₃, the AlCl₃ gas dilutedwith the He gas (hereinafter simply referred to as "AlCl₃ /He") wasintroduced to the mass flow controller 1027 and since the He gas fromthe gas cylinder 1079 was passed through the tightly sealed vessel 1080charged with Mg(C₅ H₅)₂, the Mg(C₅ H₅)₃ gas diluted with the He gas(hereinafter simply referred to as "Mg(C₂ H₅)₂ /He") was introduced tothe mass flow controller 1028.

The temperature of the cylindrical aluminum support 1005 disposed in thedeposition chamber 1001 was heated to 250° C. by a heater 1014.

After completing the preparation for the film formation as describedabove, each of the lower and upper layers was formed on the cylindricalaluminum support 1005.

The lower layer was formed by gradually opening the flow-out valves1041, 1042, 1047 and 1048, and the auxiliary valve 1018 therebyintroducing the SiH₄ gas, H₂ gas, AlCl₃ /He gas and Mg(C₅ H₅) gasthrough the gas discharge aperture 1009 of a gas introduction pipe 1008to the inside of the deposition chamber 1001. In this case, the gas flowrates were controlled by the respective mass flow controllers 1021,1022, 1027 and 1028 such that the gas flow rates were set to 50 SCCM forSiH₄, 10 SCCM for H₂ gas, 120 SCCM for AlCl₃ /He and 10 SCCM for Mg(C₅H₅)₂. The pressure in the deposition chamber 1101 was controlled to 0.4Torr by adjusting the opening of the main valve 1016 while observing thevacuum meter 1017. Then, RF power was introduced to the inside of thedeposition chamber 1001 by way of an RF matching box 1012 while settingthe power of RF power source (not illustrated) to 5 mW/cm³, to cause RFglow discharge, thereby starting the formation of the lower layer on thealuminum support. The mass flow controllers 1021, 1022, 1027 and 1028were adjusted during formation of the lower layer such that the SiH₄ gasflow remains at a constant rate of 50 SCCM the H₂ gas flow rate wasincreased at a constant ratio from 10 SCCM to 200 SCCM, the AlCl₃ /Hegas flow rate was decreased at a constant ratio from 120 SCCM to 40 SCCMand Mg(C₅ H₅)₂ /He gas flow remains at a constant rate of 10 SCCM. Then,when the lower layer of 0.05 um thickness was formed, the RF glowdischarge was stopped and the entrance of the gas to the inside of thedeposition chamber 1001 is interrupted by closing the flow-out valves1041, 1042, 1047 and 1048, and the auxiliary valve 1018, to complete theformation of the lower layer.

Then, for forming the first layer region of the upper layer, theflow-out valves 1041, 1042 and 1046, and the auxiliary valve 1018 weregradually opened to flow SiH₄ gas, H₂ gas and NO gas through the gasdischarge aperture 1009 of the gas introduction pipe 1008 into thedeposition chamber 1001. In this case, respective mass flow controllers1021, 1022 and 1026 were adjusted so that the SiH₄ gas flow rate was 100SCCM, H₂ gas flow rate was 100 SCCM and NO gas flow rate was 30 SCCM.The pressure in the deposition chamber 1001 was controlled to 0.35 Torrby adjusting the opening of the main valve 1016 while observing thevacuum meter 1017. Then, RF power was introduced into the depositionchamber 1001 through a radio frequency matching box 1012 while settingthe power of RF power source (not illustrated) to 10 mW/cm³, to cause RFglow discharge and start the formation of the first layer region of theupper layer over the lower layer. Then, when the first layer region ofthe upper layer with 3 um thickness was formed, the RF glow dischargewas stopped and the flow of the gas into the deposition chamber 1001 wasinterrupted by closing the flow-out valves 1041, 1042 and 1046, and theauxiliary valve 1018, thereby completing the formation of the firstlayer region of the upper layer.

Then, for forming the second layer region of the upper layer, theflow-out valves 1041 and 1042, and the auxiliary valve 1018 weregradually opened to flow SiH₄ gas and H₂ gas through the gas dischargeaperture 1009 of the gas introduction pipe 1008 into the depositionchamber 1001. In this case, respective mass flow controllers 1021 and1022 were adjusted so that the SiH₄ gas flow rate was 300 SCCM and H₂flow rate was 300 SCCM. The pressure in the deposition chamber 1001 wascontrolled to 0.5 Torr by adjusting the opening of the main valve 1016while observing the vacuum meter 1017. Then, RF power was introducedinto the deposition chamber 1001 through the radio frequency matchingbox 1012 while setting the power of the RF power source (notillustrated) to 15 mW/cm³, to cause the RF glow discharge and start theformation of the second layer region on the first layer region of theupper layer. Then, when the second layer region of the upper layer with20 um thickness was formed, the RF glow discharge was stopped and theflow of the gas into the deposition chamber 1001 was interrupted byclosing the flowout valves 1041 and 1042, and the auxiliary valve 1018,thereby completing the formation of the second layer region of the upperlayer.

Then, for forming the third layer region of the upper layer, theflow-out valves 1041 and 1043, and the auxiliary valve 1018 weregradually opened to flow SiH₄ gas and CH₄ gas through the gas dischargeaperture 1009 of the gas introduction pipe 1008 into the depositionchamber 1001. In this case, respective mass flow controllers 1021 and1023 were adjusted so that the SiH₄ gas flow rate was 50 SCCM and CH₄flow rate was 500 SCCM. The pressure in the deposition chamber 1001 wascontrolled to 0.4 Torr by adjusting the opening of the main valve 1016while observing the vacuum meter 1017. Then, RF power was introducedinto the deposition chamber 1001 through the radio frequency matchingbox 1012 while setting the power of RF power source (not illustrated) to10 mW/cm³, to cause the RF glow discharge and start the formation of thethird layer region on the second layer region of the upper layer. Then,when the third layer region of the upper layer with 0.5 um thickness wasformed, the RF glow discharge was stopped and the flow of the gas intothe deposition chamber 1001 was interrupted by closing the flow-outvalves 1041 and 1043, and the auxiliary valve 1018, thereby completingthe formation of the third layer region of the upper layer.

The conditions for preparing the light receiving member for use inelectrophotography described above are shown in Table 231.

It will be apparent that all of the flow-out valves other than thoserequired for forming respective layers were completely closed and, foravoiding the respective gases from remaining in the deposition chamber1001 and in the pipeways from the flow-out valves 1041-1048 to thedeposition chamber 1001, the flow-out valves 1041-1048 were closed, theauxiliary valve 1018 was opened and, further, the main valve was fullyopened thereby evacuating the inside of the system once to a high vacuumdegree as required.

Further, for forming the layer uniformly during this layer formation,the cylindrical aluminum support 1005 was rotated at a desired speed bya driving device not illustrated.

COMPARATIVE EXAMPLE 6

A light receiving member for use in electrophotography was preparedunder the same preparation conditions as those in Example 236 except fornot using H₂ gas and Mg(C₅ H₅)₂ /H₂ gas upon forming the lower layer.The conditions for preparing the light receiving member for use inelectrophotography are shown in Table 232.

The light receiving members for use in electrophotography thus preparedin Example 236 and Comparative Example 6 were set respectively to anelectrophotographic apparatus, i.e., a copying machine NP-7550manufactured by Canon Inc. and modified for experimental use and, whenseveral electrophotographic properties were checked under variousconditions, it was found that both of them had outstandingcharacteristics with voltage withstanding property in that no imagedefects were formed even if a high voltage wa applied to the lightreceiving member for use in electrophotography by highly intensivecorona discharge or frictional discharge by means of a cleaning agent.

Then, when the number of dots as the image characteristics werecompared, it was found that the number of dots, particularly, the numberof dots with less than 0.1 mm diameter of the light receiving member foruse in electrophotography of Example 236 was less than 1/3 of that ofthe light receiving member for use in electrophotography in ComparativeExample 6. In addition, for comparing the "coarse image", when the imagedensity was measured for circular regions each of 0.05 mm diameterassumed as one unit at 100 points and the scattering in the imagedensity was evaluated, it was found that the scattering in the lightreceiving member for use in electrophotography of Example 236 was lessthan 1/4 for that of the light receiving member for use inelectrophotography in Comparative Example 6 and the light receivingmember for use in electrophotography of Example 236 was excellent overthe light receiving member for use in Electrophotography of ComparativeExample 6 in view of the visual observation.

In addition, for comparing the occurrerce of image defects and thepeeling of the light receiving layer due to impactive mechanicalpressure applied for a relatively short period of time to the lightreceiving member for use in electrophotography, when stainless steelballs of 3.5 mm diameter were fallen freely from the vertical height of30 cm above the surface of the light receiving member for use inelectrophotography and abutted against the surface of the lightreceiving member for use in electrophotography, to thereby measure thefrequency that cracks occurred to the light receiving layer, it wasfound that the rate of occurrence in the light receiving member for usein electrophotography of Example 236 was less than 1/4 for that in thelight receiving member for use in electrophotography of ComparativeExample 6.

When the lower layer of the light receiving member for use inelectrophotography of Example 236 was analyzed by using SIMS, it wasfound that the content of silicon atoms, hydrogen atoms and aluminumatoms in the direction of the film thickness was varied as desired.

As has been described above, the light receiving member for use inelectrophotography of Example 236 was superior to the light receivingmember for use in electrophotography of Comparative Example 6.

EXAMPLE 237

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by changing the way of varying theAlCl₃ /He gas flow rate in the lower layer, under the preparationconditions shown in Table 233 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 236.

EXAMPLE 238

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by not using the CH₄ gas in the upperlayer of Example 236, under the preparation conditions shown in Table234 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 181.

EXAMPLE 239

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 181 by further using not illustrated SiF₄gas (99.9999% purity), not illustrated He gas (99.999% purity) and notillustrated N₂ gas in Example 236, under the preparation conditionsshown in Table 235 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 236.

EXAMPLE 240

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by replacing GeH₄ gas cylinder with Argas (99.9999% purity) cylinder, replacing NO gas cylinder with NH₃ gas(99.999% purity) cylinder, replacing B₂ H₆ /H₂ gas cylinder with H₂-diluted PH₃ gas (99.999% purity, hereinafter simply referred to as "PH₃/H₂ gas") purity, hereinafter simply referred to as PH₃ /H₂) cylinder,replacing the NO gas cylinder with NH₃ gas (99.999% purity) cylinder inExample 236, under the preparation conditions shown in Table 236 and,when evaluated in the same manner, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example236.

EXAMPLE 241

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by further using B₂ H₆ /H₂ gas, notillustrated PH₃ /H₂ gas, not illustrated C₂ H₂ gas and not illustratedSiF₄ gas, under the preparation conditions shown in Table 237 and, whenevaluated in the same manner, satisfactory improvement was obtained todots, coarse image and peeling in the same manner as in Example 236.

EXAMPLE 242

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by replacing GeH₄ gas cylinder withSiF₄ gas (99.999% purity) cylinder, and further using NO gas, notillustrated PH₃ /H₂ gas, B₂ H₆ /H₂ gas and Si/F₄ gas, under thepreparation conditions shown in Table 238 and, when evaluated in thesame manner, satisfactory improvement was obtained to dots, coarse imageand peeling in the same manner as in Example 236.

EXAMPLE 243

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by further using B₂ H₆ /H₂ gas, notillustrated H₂ S (99.9% purity), not illustrated PH₃ /H₂ gas and notillustrated N₂ gas, under the preparation conditions shown in Table 239,and, when evaluated in the same manner, satisfactory improvement wasobtained to dots, coarse image and peeling in the same manner as inExample 181.

EXAMPLE 244

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 replacing the CH₄ gas cylinder with C₂H₂ gas (99.999% purity) cylinder in Example 236, under the preparationconditions shown in Table 240 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 236.

EXAMPLE 245

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by replacing the B₂ H₆ /H₂ gascylinder with BF₃ gas diluted H₂ (99.999% purity, hereinafter simplyreferred to as BF₃ /H₂) cylinder, and replacing the NO gas cylinder withN₂ gas and using H₂ S gas from a not illustrated cylinder in Example236, under the preparation conditions shown in Table 241, and whenevaluated in the same manner, satisfactory improvement was obtained tothe dots, coarse image and peeling in the same manner as in Example 181.

EXAMPLE 246

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by replacing the NO gas cylinder witha NH₃ gas (99.999% purity) cylinder, replacing B₂ H₆ /H₂ gas cylinderwith PH₃ /H₂ gas cylinder in Example 236, under the preparationconditions shown in Table 242, and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 236.

EXAMPLE 247

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 241 by further using H₂ -diluted PF₅ gasfrom a not illustrated cylinder (99.999% purity, hereinafter simplyreferred to as "PF₃ /H₂ gas"), SiF₄ gas and B₂ H₆ /H₂ gas, under thepreparation conditions shown in Table 243, and when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 241.

EXAMPLE 248

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 244 by further using Si₂ H₆ (99.99%purity), Si₂ F₆ (99199% purity) gas and PH₃ /H₃ gas, under thepreparation conditions shown in Table 244, and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 244.

EXAMPLE 249

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 246 by further using B₂ H₆ /H₂ gas from anot illustrated cylinder, PH₅ /H₅ gas and Si₂ F₆ gas, under thepreparation conditions shown in Table 245 and, when evaluated in thesame manner, satisfactory improvement was obtained to dots, coarse imageand peeling in the same manner as in Example 246.

EXAMPLE 250

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by further using B₂ H₆ /H₂ gas andGeH₄ gas in the upper layer, under the preparation conditions shown inTable 246 and, when evaluated in the same manner, satisfactoryimprovement was obtained to dots, coarse image and peeling in the samemanner as in Example 236.

EXAMPLE 251

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by changing the outer diameter of thecylindrical aluminum support to 80 mm in Example 247, under thepreparation conditions shown in Table 193 and, when evaluated in thesame manner as in Example 236, except for using an electrophotographicapparatus, i.e., a copying machine NP-9030 manufactured by Canon Inc.and modified for the experimental use, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 236.

EXAMPLE 252

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by changing the outer diameter of thecylindrical aluminum support to 60 mm in Example 236, under thepreparation conditions shown in Table 248 and, when evaluated in thesame manner as in Example 236 except for using an electrophotographicapparatus, i.e., a copying machine NP-150Z manufactured by Canon Inc.and modified for the experimental use, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 236.

EXAMPLE 253

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by changing the outer diameter of thecylindrical aluminum support to 30 mm in Example 236 under thepreparation conditions shown in Table 249 and, when evaluated in thesame manner as in Example 236, except for using an electrophotographicapparatus, i.e., a copying machine FC-5 manufactured by Canon Inc. andmodified for the experimental use, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example236.

EXAMPLE 254

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by changing the outer diameter of thecylindrical aluminum support to 15 mm in Example 236, under thepreparation conditions shown in Table 250, and evaluated in the samemanner as in Example 236, except for using an electrophotographicapparatus, manufactured for experimental use and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 236.

EXAMPLE 255

A light sensitive member for use in electrophotography was prepared,under the same preparation conditions as those in Example 251 by using acylindrical aluminum support applied with mirror-finishing fabricationin Example 251 and further machined into a cross sectional shape of:a=25 um, b=0.8 um as shown in FIG. 38 by a diamond point tool and, whenevaluated in the same manner as in Example 251, satisfactory improvementwas obtained to, the dots, coarse image and peeling in the same manneras in Example 251.

EXAMPLE 256

A light receiving member for use in electrophotography was prepared,under the same preparation conditions as those in Example 251 using acylindrical aluminum support applied with mirror-finish fabrication andsubsequently applied with a so-called surface dimpling of causing anumber of hit pits to the surface of the cylindrical aluminum support bythe exposure to a plurality of dropping bearing balls to form into across sectional shape of: c=50 um and d=1 um as shown in FIG. 39 and,when evaluated in the same manner as in Example 251, satisfactoryimprovement was be obtained for the dots, coarse image and peeling inthe same as in Example 251.

EXAMPLE 257

A light receiving member for use in electrophotography having an upperlayer comprising poly-Si(H, X) was prepared in the same manner as inExample 244 by using a cylindrical aluminum support heated to atemperature of 500° C., under the preparation conditions as shown inTable 251 and, when evaluated in the same manner, satisfactoryimprovement was obtained to dots, coarse image and peeling in the samemanner as in Example 244.

EXAMPLE 258

A light receiving member for use in electrophotography was prepared bymicrowave glow discharge decomposition in the same manner as in Example23 by further using SiF₄ gas, NO gas, Mg(C₅ H₅)₂ /He gas and B₂ H₆ /H₂gas upon forming the lower layer in Example 23, under the samepreparation conditions as shown in Table 252.

When the light receiving member for use in electrophotography wasevaluated in the same manner as in Example 236. satisfactory improvementwas obtained to the dots, coarse image and peeling in the same manner asin Example 236.

When the lower layer of the light receiving member for use inelectrophotography of Example 258 was analyzed by using SIMS, it wasfound that the content of silicon atoms, hydrogen atoms and aluminumatoms in the direction of the film thickness was varied as desired.

EXAMPLE 259

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by replacing the CH₄ gas cylinder witha C₂ H₂ gas (99.9999% purity) cylinder, and further using B₂ H₆ /H₂ gasSi₂ F₆ gas in Example 236, under the preparation conditions shown inTable 253 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 236.

EXAMPLE 260

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by further using B₂ H₆ /H₂ gas, N₂gas, under the preparation conditions shown in Table 254 and, whenevaluated in the same manner, satisfactory improvement was obtained tothe dots, coarse image and peeling in the same manner as in Example 236.

EXAMPLE 261

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by using SnH₄ gas (99.99% purity) froma not illustrated cylinder, PF₃ /H₂ gas, Si₂ /F₆ gas and replacing NOgas cylinder with NH₃ gas (99.999%, purity) cylinder in Example 236,under the preparation conditions shown in Table 255 and, when evaluatedin the same manner, satisfactory improvement was obtained to the dots,coarse image and peeling in the same manner as in Example 236.

EXAMPLE 262

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 241 by replacing N₂ gas cylinder with SiF₄gas and further using PF₅ H₂ gas from a not illustrated cylinder, SiF₄gas in Example 236, under the preparation conditions shown in Table 256and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 241.

EXAMPLE 263

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 244 by further using Si₂ H₆ /H₂ gas in theupper layer, under the preparation conditions shown in Table 257 and,when evaluated in the same manner, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example244.

EXAMPLE 264

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 246 by further using B₂ H₆ /H₂ gas in theupper layer, under the preparation conditions shown in Table 258 and,when evaluated in the same manner, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example246.

EXAMPLE 265

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by further using B₂ H₆ /H₂ gas and Hegas from a not illustrated cylinder, under the preparation conditionsshown in Table 259 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 236.

EXAMPLE 266

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by further using B₂ H₆ /H₂ gas, SiF₄gas from a not illustrated cylinder, C₂ H₂ gas and PH₃ /H₂, under thepreparation conditions shown in Table 266 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 236.

EXAMPLE 267

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 241, under the preparation conditionsshown in Table 261 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 241.

EXAMPLE 268

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by further using B₂ H₆ /H₂ gas, C₂ H₂gas from a not illustrated cylinder, under the preparation conditionsshown in Table 262 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 236.

EXAMPLE 269

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by further using C₂ H₂ gas from a notillustrated cylinder, PH₃ /H₂ gas, under the preparation conditionsshown in Table 262 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 236.

EXAMPLE 270

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 236 by further using GeH₄ gas, H₂ S gasfrom a not illustrated cylinder, PH₃ /H₂ gas, C₂ H₂ gas and SiF₄, underthe preparation conditions shown in Table 264 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 236.

EXAMPLE 271

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 244 by further using SiH₄ gas from a notillustrated cylinder, under the preparation conditions shown in Table265 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 244.

EXAMPLE 272

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271, under the preparation conditionsshown in Table 266 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 271.

EXAMPLE 273

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271, under the preparation conditionsshown in Table 267 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 271.

EXAMPLE 274

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271 by further using BF₃ gas from a notillustrated cylinder, under the preparation conditions shown in Table268 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 271.

EXAMPLE 275

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271, under the preparation conditionsshown in Table 269 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 271.

EXAMPLE 276

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271, under the preparation conditionsshown in Table 270 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 271.

EXAMPLE 277

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271, under the preparation conditionsshown in Table 271 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 271.

EXAMPLE 278

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271, under the preparation conditionsshown in Table 272 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 271.

EXAMPLE 279

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271, under the preparation conditionsshown in Table 273 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 271.

EXAMPLE 280

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271 by further using PH₃ gas from a notillustrated cylinder and Si₂ F₆ gas, under preparation conditions shownin Table 274 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 271.

EXAMPLE 281

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 280, under the preparation conditionsshown in Table 275 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 280.

EXAMPLE 282

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271 by using H₂ S gas from a notillustrated cylinder, under the preparation conditions shown in Table276 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 271.

EXAMPLE 283

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271, under the preparation conditionsshown in Table 277 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 271.

EXAMPLE 284

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271, under the preparation conditionsshown in Table 278 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 271.

EXAMPLE 285

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271 by using NH₃ gas from a notillustrated cylinder, under the preparation conditions shown in Table279 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 271.

EXAMPLE 286

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271 by using N₂ gas from a not illustratedcylinder, under the preparation conditions shown in Table 280 and, whenevaluated in the same manner, satisfactory improvement was obtained tothe dots, coarse image and peeling in the same manner as in Example 271.

EXAMPLE 287

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271, under the preparation conditionsshown in Table 281 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 271.

EXAMPLE 288

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271, under the preparation conditionsshown in Table 282 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 271.

EXAMPLE 289

A light receiving member for use in electrophotography

was prepared in the same manner as in Example 280, under the preparationconditions shown in Table 283 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 280.

EXAMPLE 290

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 271, under the preparation conditionsshown in Table 284 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 71.

EXAMPLE 291

A lower layer of a light receiving member for use in electrophotographyaccording to this invention was formed by RF sputtering method and theupper layer thereof was formed RF glow discharge decomposition.

FIG. 42 shows an apparatus for producing the light receiving member foruse in electrophotography by the RF sputtering, comprising a rawmaterial gas supply device 1500 and a deposition device 1501.

In the figure, a target 1045 is composed of Si, Al and Mg as the rawmaterial for forming the lower layer, in which the mixing ratio for theatoms is varied such that a desired profile is obtained across thethickness for each of the atoms.

In the figure, raw material gases for forming the lower layer in thisinvention were tightly sealed in gas cylinders 1408, 1409 and 1410, inwhich the cylinder 1408 was for SiH₄ gas (99.99% purity), the cylinder1409 was for H₂ gas (99.9999%) and the cylinder 1076 was for Ar gas(99.9999% purity).

In the figure, a cylindrical aluminum support 1402 has an outer diameterof 108 mm and a mirror-finished surface.

At first, in the same manner as in Example 1, the inside of thedeposition chamber 1401 and gas pipeways was evacuated till the pressureof the deposition chamber 1401 was reduced to 1×10⁻⁶ Torr.

Then, in the same manner as in Example 1, the respective gases wereintroduced into the mass flow controllers 1412-1414.

The temperature of the cylindrical aluminum support 1402 disposed in thedeposition chamber 1401 was heated to 250° C. by a heater notillustrated.

After completing the preparation for the film formation as describedabove, the lower layer was formed on the cylindrical aluminum support1402.

The lower layer was formed by gradually opening the flow-out valves1420, 1421 and 1422, and the auxiliary valve 1432 thereby introducingthe SiH₄ gas, H₂ gas and Ar gas to the inside of the deposition chamber1401. In this case, the gas flow rates were controlled by the respectivemass flow controllers 1412, 1413 and 1414 such that the gas flow rateswere set to 50 SCCM for SiH₄, 10 SCCM for H₂ gas, and 200 SCCM for Argas. The pressure in the deposition chamber 1401 was controlled to 0.01Torr by adjusting the opening of the main valve 1407 while observing thevacuum meter 1435. Then, RF power was introduced between the target 1405and the aluminum support 1402 by way of an RF matching box 1433 whilesetting the power of an RF power source (not illustrated) to 1 mW/cm³,thereby starting the formation of the lower layer on the cylindricalaluminum support. The mass flow controllers 1412, 1413 and 1414 wereadjusted during formation of the lower layer such that the SiH₄ gas flowremained at a constant rate of 50 SCCM, the H₂ gas flow rate wasincreased at a constant ratio from 5 SCCM to 100 SCCM and the Ar gasflow rate remained at a constant ratio of 204 SCCM. Then, when the lowerlayer of 0.05 um thickness was formed, the RF glow discharge was stoppedand the entrance of the gas to the inside of the deposition chamber 1401was interrupted by closing the flow-out valves 1420, 1421 and 1423 andthe auxiliary valve 1432, to complete the formation of the lower layer.

The cylindrical aluminum support 1402 was rotated at a desired speed bya driving device not illustrated during formation of the lower layer formaking the layer formation uniform.

Then, a light receiving member for use in electrophotography wasprepared in the same manner as in Example 265 under the preparationconditions shown in Table 285 by using the device illustrated in FIG. 37upon forming the upper layer. When the same evaluation was applied,satisfactory improvement was obtained to dots, coarse image and layerpeeling in the same manner as in Example 265.

When the lower layer of the light receiving member for use inelectrophotography of Example 291 was analyzed by using SIMS, it wasfound that the content of silicon atoms, hydrogen atoms and aluminumatoms in the direction of the film thickness was varied as desired.

EXAMPLE 292

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 under the preparation conditions shownin Table 286 by further using Cu(C₄ H₇ N₂ O₂)₂ /He gas upon forming thelower layer in Example 1.

COMPARATIVE EXAMPLE 7

A light receiving member for use in electrophotography was preparedunder the same preparation conditions as those in Example 292 except fornot using H₂ gas and Cu(C₄ H₇ N₂ O₂)₂ /He gas upon forming the lowerlayer. The conditions for preparing the light receiving member for usein electrophotography are shown in Table 287.

The light receiving members for use in electrophotography thus preparedin Example 292 and Comparative Example 7 were set respectively to anelectrophotographic apparatus, i.e., a copying machine NP-7550manufactured by Canon Inc. and modified for experimental use and, whenseveral electrophotographic properties were checked under variousconditions, it was found that both of them had outstandingcharacteristic with voltage withstanding property in that no imagedefects were formed even if a high voltage was applied to the lightreceiving member for use in electrophotography by highly intensivecorona discharge or frictional discharge by means of a cleaning agent.

Then, when the number of dots as the image characteristics werecompared, it was found that the number of dots, particularly, the numberof dots with less than 0.1 mm diameter of the light receiving member foruse in electrophotography of Example 292 was less than 1/4 of that ofthe light receiving member for use in electrophotography in ComparativeExample 7. In addition, for comparing the "coarse image", when the imagedensity was measured for circular regions each of 0.05 mm diameterassumed as one unit at 100 points and the scattering in the imagedensity, was evaluated, it was found that the scattering in the lightreceiving member for use in electrophotography of Example 292 was lessthan 1/5 for that of the light receiving member for use inelectrophotography in Comparative Example 7 and the light receivingmember for use in electrophotography of Example 292 was excellent overthe light receiving member for use in Electrophotography of ComparativeExample 7 in view of the visual observation.

In addition, for comparing the occurrence of image defects and thepeeling of the light receiving layer due to impactive mechanicalpressure applied for a relatively short period of time to the lightreceiving member for use in electrophotography, when stainless steelballs of 3.5 mm diameter were fallen freely from the vertical height of30 cm above the surface of the light receiving member for use inelectrophotography and abutted against the surface of the lightreceiving member for use in electrophotography, to thereby measure thefrequency that cracks occurred to the light receiving layer, it wasfound that the rate of occurrence in the light receiving member for usein electrophotography of Example 292 was less than 1/5 for that in thelight receiving member for use in electrophotography of ComparativeExample 7.

When the lower layer of the light receiving member for use inelectrophotography of Example 292 was analyzed by using SIMS, it wasfound that the content of silicon atoms, hydrogen atoms and aluminumatoms in the direction of the film thickness was varied as desired.

As has been described above, the light receiving member for use inelectrophotography of Example 292 was superior to the light receivingmember for use in electrophotography of Comparative Example 6.

EXAMPLE 293

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by using B₂ H₆ /H₂ gas and NO gas andchanging the way of varying the AlCl₃ /He gas flow rate in the lowerlayer, under the preparation conditions shown in Table 288, and whenevaluated in the same manner, satisfactory improvement was obtained tothe dots, coarse image and peeling in the same manner as in Example 292.

EXAMPLE 294

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by using Mg(C₅ H₅) gas diluted with Hegas (hereinafter simply referred to as "Mg(C₅ H₅)₂ /He") from a notillustrated sealed vessel and GeH₄ gas in the lower layer, and He gasfrom a not illustrated cylinder in the upper layer, under thepreparation conditions shown in Table 289 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 292.

EXAMPLE 295

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by further using Mg(C₅ H₅)₂ /He gasfrom a not illustrated sealed vessel, CH₄ gas, B₂ H₆ /H₂ gas, NO gas,SiF₄ gas (99.999% purity) from a not illustrated cylinder, N₂ gas from anot illustrated cylinder and He gas, under the preparation conditionsshown in Table 290 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 236.

EXAMPLE 296

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 291 by replacing H₂ gas cylinder with Argas cylinder (99.9999% purity), CH₄ gas cylinder with NH₃ gas cylinder(99.999% purity), and further using SiV₄ gas in the upper layer, underthe preparation conditions shown in Table 291 and, when evaluated in thesame manner, satisfactory improvement, was obtained to the dots, coarseimage and peeling in the same manner as in Example 236.

EXAMPLE 297

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by using CH₄ gas and B₂ H₆ /H₂ gas inthe lower layer, and PH₃ /H₂ gas (99.999% purity) from a not illustratedcylinder in the upper layer, under the preparation conditions shown inTable 292, and when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 292.

EXAMPLE 298

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by replacing NO gas cylinder with SiF₄gas cylinder in the lower layer, and further using PH₃ /H₂ from a notillustrated cylinder in the upper layer in Example 292, under thepreparation conditions shown in Table 298 and, when evaluated in thesame manner, satisfactory improvement was obtained to dots, coarse imageand peeling in the same manner as in Example 292.

EXAMPLE 299

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by using Mg(C₅ H₅)₂ /He gas from a notillustrated sealed vessel in the lower layer, and PH₃ /H₂ gas from a notillustrated cylinder and N₂ gas in the upper layer, under thepreparation conditions shown in Table 294 and, when evaluated in thesame manner, satisfactory improvement was obtained to dots, coarse imageand peeling in the same manner as in Example 292.

EXAMPLE 300

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by further using CH₄ gas and B₂ H₆ /H₂gas in the lower layer, and replacing CH₄ gas cylinder with C₂ H₂ gas(99.9999% purity) cylinder in the upper layer, under the preparationconditions shown in Table 295 and, when evaluated in the same manner,satisfactory improvement was obtained to dots, coarse image and peelingin the same manner as in Example 292.

EXAMPLE 301

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by using Mg(C₅ H₅)₂ /He gas from a notillustrated sealed vessel, replacing B₂ H₆ gas cylinder with PH₃ /H₂ gascylinder and further using SiF₄ gas from a not illustrated cylinder,under the preparation conditions shown in Table 296 and, when evaluatedin the same manner, satisfactory improvement was obtained to dots,coarse image and peeling in the same manner as in Example 292.

EXAMPLE 302

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by replacing CH₄ gas cylinder with NH₃gas (99.999% purity) cylinder in Example 292, and using NH₃ gas in theupper layer, under the preparation conditions shown in Table 297, and,when evaluated in the same manner, satisfactory improvement was obtainedto dots, coarse image and peeling in the same manner as in Example 292.

EXAMPLE 303

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 297 by using CH₄ gas in the lower layer,and further using SiF₄ gas in the upper layer, under the preparationconditions shown in Table 298 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 297.

EXAMPLE 304

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 300 by replacing CH₄ gas with C₂ H₂ gas,using PH₃ /H₂ gas from a not illustrated cylinder in the lower layer,and further using Si₂ F₆ gas (99.99% purity) cylinder from a notillustrated cylinder and Si₂ F₆ gas (99.99 a% purity) in the upperlayer, under the preparation conditions shown in Table 299 and, whenevaluated in the same manner, satisfactory improvement was obtained tothe dots, coarse image and peeling in the same manner as in Example 300.

EXAMPLE 305

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by using Si₂ F₆ gas, PH₃ gas and NH₃gas from a not illustrated cylinder, under the preparation conditionsshown in Table 300, and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 292.

EXAMPLE 306

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292, under the preparation conditionsshown in Table 301 and, when evaluated in the same manner, satisfactoryimprovement was, obtained to the dots, coarse image and peeling in thesame manner as in Example 292.

EXAMPLE 307

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by changing the outer diameter of thecylindrical aluminum support to 80 mm in Example 292, under thepreparation conditions shown in Table 302 and, when evaluated in thesame manner as in Example 292, except for using an electrophotographicapparatus, i.e., a copying machine NP-9030 manufactured by Canon Inc,and modified for the experimental use, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 292.

EXAMPLE 308

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by changing the outer diameter of thecylindrical aluminum support to 60 mm in Example 292, under thepreparation conditions shown in Table 303 and, when evaluated in thesame manner as in Example 292, except for using an electrophotographicapparatus, i.e., a copying machine NP-150Z manufactured by Canon Inc.and modified for the experimental use, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 292.

EXAMPLE 309

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by changing the outer diameter of thecylindrical aluminum support to 30 mm in Example 294, under thepreparation conditions shown in Table 304 and, when evaluated in thesame manner as in Example 236, except for using an electrophotographicapparatus, PG,235 i.e., a copying machine FC-5 manufactured by CanonInc. and modified for the experimental use, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 292.

EXAMPLE 310

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by changing the outer diameter of thecylindrical aluminum support to 15 mm in Example 292, under thepreparation conditions shown in Table 305, and evaluated in the samemanner as in Example 292, except for using an electrophotographicapparatus, manufactured for experimental use and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 292.

EXAMPLE 311

A light sensitive member for use in electrophotography was prepared,under the same preparation conditions as those in Example 307 by using acylindrical aluminum support applied with mirror-finishing fabricationin Example 307 and further machined into a cross sectional shape of:a=25 μm, b=0.8 μm as shown in FIG. 38 by a diamond point tool and, whenevaluated in the same manner as in Example 207, satisfactory improvementwas obtained to, the dots, coarse image and peeling in the same manneras in Example 307.

EXAMPLE 312

A light receiving member for use in electrophotography was prepared,under the same preparation conditions as those in Example 307 using acylindrical aluminum support applied with mirror-finish fabrication andsubsequently applied with a so-called surface dimpling of causing anumber of hit pits to the surface of the cylindrical aluminum support bythe exposure to a plurality of dropping bearing balls to form into across sectional shape of: c=50 μm and d=1 μm as shown in FIG. 39 and,when evaluated in the same manner as in Example 307, satisfactoryimprovement was be obtained for the dots, coarse image and peeling inthe same as in Example 307.

EXAMPLE 313

A light receiving member for use in electrophotography having an upperlayer comprising poly-Si(H, X) was prepared in the same manner as inExample 300 by replacing CH₄ gas with C₂ h₂ gas and using a cylindricalaluminum support heated to a temperature of 500° C., under thepreparation conditions as shown in Table 306 and, when evaluated in thesame manner, satisfactory improvement was obtained to dots, coarse imageand peeling in the same manner as in Example 300.

EXAMPLE 314

A light receiving member for use in electrophotography was prepared bymicrowave glow discharge decomposition in the same manner as in Example23 by further using Cu(C₄ H₇ N₂ O₂)He gas, SiF₄ gas, NO gas and B₂ H₆gas upon forming the lower layer in Example 23, under the samepreparation conditions as shown in Table 307.

When the light receiving member for use in electrophotography wasevaluated in the same manner as in Example 292, satisfactory improvementwas obtained to the dots, coarse image and peeling in the same manner asin Example 292.

When the lower layer of the light receiving member for use inelectrophotography of Example 314 was analyzed by using SIMS, it wasfound that the content of silicon atoms, hydrogen atoms and aluminumatoms in the direction of the film thickness was varied as desired.

EXAMPLE 315

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by replacing the CH₄ gas cylinder witha C₂ H₂ gas cylinder in Example 292, under the preparation conditionsshown in Table 308 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 236.

EXAMPLE 316

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by replacing B₂ H₆ /H₂ gas cylinderwith PF₃ /H₂ gas cylinder in Example 292, using CH₄ gas in lower layer,and using SiF₄ gas in the entire layer, under the preparation conditionshown in Table 309 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 292.

EXAMPLE 317

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by replacing CH₄ gas cylinder with NH₃gas cylinder, using SnH₄ from a not illustrated cylinder, Mg(C₅ H₅)₂ /Hegas from a not illustrated sealed vessel in Example 292, under thepreparation conditions shown in Table 310 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 292.

EXAMPLE 318

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 297 by replacing N₂ gas cylinder with PF₃/H₂ gas cylinder, and using SiF₄ gas, under the preparation conditionsshown in Table 311 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 241.

EXAMPLE 319

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by replacing CH₄ gas cylinder with C₂H₂ gas cylinder, and further using Si₂ H₆ gas in the upper layer, underthe preparation conditions shown in Table 312 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 292.

EXAMPLE 320

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by replacing CH₄ gas cylinder with C₂H₂ gas cylinder in Example 292, and further using PH₃ /H₂ gas from a norillustrated gas cylinder in the upper layer, under the preparationconditions shown in Table 313 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 292.

EXAMPLE 321

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by further using NO gas, B₂ H₆ /H₂gas, Mg(C₅ H₅)₂ /He gas in the lower layer, and replacing H₂ gas withnot illustrated He gas in the upper layer in Example 292, under thepreparation conditions shown in Table 314 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 292.

EXAMPLE 322

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by using SiF₄ gas, CH₄ gas, B₂ H₆ /H₂gas, NO gas, AlCl₃ /He gas, Cu(C₄ H₇ N₂ O₂)₂ /He gas in the entirelayer, and using PH₃ /H₂ gas in the upper layer, under the preparationconditions shown in Table 315 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 292.

EXAMPLE 323

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 322, under the preparation conditionsshown in Table 316 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 322.

EXAMPLE 324

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by further using C₂ H₂ gas, under thepreparation conditions shown in Table 317 and, when evaluated in thesame manner, satisfactory improvement was obtained to the dots, coarseimage and peeling in the same manner as in Example 292.

EXAMPLE 325

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by replacing C₄ gas cylinder with C₂H₂ 2 gas cylinder, B₂ H₆ /H₂ gas cylinder with PH₃ /H₂ gas cylinder inExample 292, under the preparation conditions shown in Table 318 and,when evaluated in the same manner, satisfactory improvement was obtainedto the dots, coarse image and peeling in the same manner as in Example292.

EXAMPLE 326

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292 by further using H₂ S gas (99.999%purity) from a not illustrated cylinder, under the preparationconditions shown in Table 319 and, when evaluated in the same manner,satisfactory improvement was obtained to the dots, coarse image andpeeling in the same manner as in Example 292.

EXAMPLE 327

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 322 by further using C₂ H₂ gas from a notillustrated cylinder, under the preparation conditions shown in Table320 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 322.

EXAMPLE 328

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 327, under the preparation conditionsshown in Table 321 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 327.

EXAMPLE 329

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 322 by further using Mg(C₅ H₅)₂ /He gasfrom a not illustrated sealed vessel, under the preparation conditionsshown in Table 322 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 322.

EXAMPLE 330

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 327, under the preparation conditionsshown in Table 324 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 327

EXAMPLE 331

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 329, under the preparation conditionsshown in Table 324 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 329.

EXAMPLE 332

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 327, under the preparation conditionsshown in Table 325 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 327.

EXAMPLE 333

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 327, under the preparation conditionsshown in Table 326 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 327.

EXAMPLE 334

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 327, under the preparation conditionsshown in Table 327 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 327.

EXAMPLE 335

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 327, under the preparation conditionsshown in Table 328 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 327.

EXAMPLE 336

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 327 by further using H₂ S gas from a notillustrated cylinder, under the preparation conditions shown in Table329 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 236.

EXAMPLE 337

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 327, under the preparation conditionsshown in Table 330 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 327.

EXAMPLE 338

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 327 by further using H₂ S gas from a notillustrated cylinder, under the preparation conditions shown in Table327 and, when evaluated in the same manner, satisfactory improvement wasobtained to the dots, coarse image and peeling in the same manner as inExample 327.

EXAMPLE 339

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 327, under the preparation conditionsshown in Table 332 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 327.

EXAMPLE 340

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 329, under the preparation conditionsshown in Table 333 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 329.

EXAMPLE 341

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 327 by further using NH₃ tas and H₂ S gasfrom a not illustrated cylinder, under the preparation conditions shownin Table 327 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 327.

EXAMPLE 342

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 327, under the preparation conditionsshown in Table 335 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 327.

EXAMPLE 343

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 327, under the preparation conditionsshown in Table 336 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 327.

EXAMPLE 344

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 329, under the preparation conditionsshown in Table 337 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 329.

EXAMPLE 345

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 329 by further using Mg(C₅ H₅)₂ /He gas,under the preparation conditions shown in Table 338 and, when evaluatedin the same manner, satisfactory improvement was obtained to the dots,coarse image and peeling in the same manner as in Example 329.

EXAMPLE 346

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 327, under the preparation conditionsshown in Table 339 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 327.

EXAMPLE 347

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 292, under the preparation conditionsshown in Table 340 and, when evaluated in the same manner, satisfactoryimprovement was obtained to the dots, coarse image and peeling in thesame manner as in Example 292.

EXAMPLE 348

The lower layer was formed under the preparation conditions shown inTable 341 in the same manner as in Example 292 except for using a targetcomposed of Si, Al, Cu instead of Si, Al, Mg upon forming the lowerlayer in Example 291.

Then, a light receiving member for use in electrophotography wasprepared in the same manner as in Example 292 under the preparingconditions shown in a Table 341 by using the device shown in FIG. 37 forforming the upper layer. When the evaluation was conducted in the samemanner, satisfactory improvement to dots end layer peeling was obtainedin the same manner as in Example 292.

When the lower layer of the light receiving member for use inelectrophotography of Example 348 was analyzed by using SIMS, it wasfound that the content of silicon atoms, hydrogen atoms and aluminumatoms in the direction of the film thickness was varied as desired.

EXAMPLE 349

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 1 under the preparation conditions shownin Table 225 by further using NaNH₂ /He gas upon forming the lower layerin Example 1.

COMPARATIVE EXAMPLE 8

A light receiving member for use in electrophotography was preparedunder the same conditions in Example 349 except for not using H₂ gasupon forming the lower layer.

The orifice for the content of atoms across the layer thickness near thelower layer of the light receiving member for use in electrophotographyin Example 349 and Comparative Example 8 thus prepared was analyzed byusing SIMS (secondary ion mass analyzing device, manufactured by Kameka:IMS-3F). The results are shown in FIG. 43(a), (b). In FIG. 43, theabscissa represents the measured time corresponding to the positionacross the layer thickness, and the ordinate represents the content foreach of the atoms by relative values.

FIG. 4(a) shows the profile for the content of atoms across the layerthickness in Example 349 in which aluminum atoms were distributed moreon the side of the support, while silicon atoms, hydrogen atoms aredistributed more on the side of the upper layer.

FIG. 4(b) shows the profile for the content of atoms across the layerthickness in Comparative Example 8 in which aluminum atoms aredistributed more on the side of the support, silicon atoms weredistributed more on the side of the upper layer and hydrogen atoms weredistributed uniformly.

Then, the light receiving members for use photography thus prepared inExample 349 and Comparative Example 8 were set respectively toelectrophotographic apparatus, that is, a copying machine NP-7550manufactured by Cannon Inc. and modified for experimental use andseveral electrophotographic properties were checked under variousconditions.

The light receiving member for use in electrophotography was rotated for1000 turns while using a magnet roller as a cleaning roller, coatingpositive toners on the magnet roller while keeping all of the chargingdevices not operated. Then, a black original was prepared by an ordinaryelectrophotographic process and as a result of measuring the number ofdots generated, it was found that the light receiving member for use inelectrophotography of Example 349 showed the number of dots less than1/3 for that of the light receiving member for use in electrophotographyin Comparative Example 8.

In addition, the light receiving member for use in electrophotographywas rotated by 20 turns in a state where coagulated paper dusts wereplaced on the grits of a separation charger to cause abnormal discharge.Then, after removing the paper dusts, images were prepared by using ablack original and, as a result of measuring the number of dots, it wasfound that the number of dots in the light receiving member for use inelectrophotography of Example 349 was less than 2/3 for that of thelight receiving member for use in electrophotography in ComparativeExample 8.

Further, a roll made of high density polyethylene having about 32 mmφdiameter and 5 mm thickness was urged to the light receiving member foruse in electrophotography under the pressure of 2 kg and then the lightreceiving member for use in electrophotography was rotated for 500,000turns. Then, as a result of comparing the number of peeling visually inthe light receiving layer, it was found that the number of peeling forthe light receiving member for use in Example 349 was less than 1/2 forthat of the light receiving member for use in electrophotography inComparative Example 8.

As has been described above, the light receiving member for use inelectrophotography in Example 349 was superior from overall point ofview to the light receiving member for use in electrophotography inComparative Example 8.

EXAMPLE 350

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 349 under the preparing conditions shownin Table 342 except for changing the gas flow rate of Al(CH₃)₃ /He tothe value shown in Table 343.

COMPARATIVE EXAMPLE 9

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 349 under the preparing conditions shownin Table 342 except for changing the gas flow rate of Al(CH₃)₃ /He tothe value shown in Table 343.

A roll made of high density polyethylene was urged to the lightreceiving members for use in electrophotography thus prepared in Example350 and Comparative Example 9 in the same manner as in Example 349 andthe number of layer peeling was compared. The result is shown in Table343 assuming the number of layer peeling to 1 in the layer of the lightreceiving member for use in electrophotography of Example 349. Further,the content of aluminum atoms near the upper portion of the lower layerwas analyzed by using SIMS. The result is shown in Table 343.

As shown by the result in Table 343, the number of layer peeling was lowand satisfactory result was obtained in the region where the content ofthe aluminum atoms near the upper portion of the lower layer is greaterthan 20 atom %.

EXAMPLE 351

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 349 under the preparing conditions shownin Table 342 except for changing the temperature for the support at aconstant rate from 350° C. to 250° C. and using Y(Oi--C₃ H₇)₃ instead ofNaNH₂ during formation of the lower layer. When the evaluation wasconducted in the same manner, satisfactory improvement to dots and layerpeeling was obtained in the same manner as in Example 349.

EXAMPLE 352

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 349 under the preparing conditions shownin Table 342 except for changing RF power at a constant rate from 50mW/cm³ to 5 mW/cm³ and using Mn(CH₃)(CO)₅ instead of NaNH₂ duringformation of the lower layer. When the evaluation was conducted in thesame manner, satisfactory improvement to dots and layer peeling wasobtained in the same manner as in Example 349.

EXAMPLE 353

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 349 under the preparing conditions shownin Table 344 except for using Zn(C₂ H₅)₂ instead of NaNH₂ and, further,adding the raw material gas shown in Table 342. When the evaluation wasconducted in the same manner, satisfactory improvement to dots and layerpeeling was obtained in the same manner as in Example 349.

EXAMPLE 354

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 349 under the preparing conditions shownin Table 342 except for changing the outer diameter of the cylindricalaluminum support to 30 mm and changing the gas flow rate and RF powershown in Table 342 to 1/3 respectively. When the evaluation wasconducted in the same manner, satisfactory improvement to dots and layerpeeling was obtained in the same manner as in Example 349.

EXAMPLE 355

A light receiving member for use in electrophotography was prepared inthe same manner as in Example 349 under the preparing conditions shownin Table 345. When the evaluation was conducted in the same manner,satisfactory improvement to dots and layer peeling was obtained in thesame manner as in Example 349.

EXAMPLE 356

A light receiving member for use in electrophotography was prepared bythe microwave glow discharge decomposition in the same manner as inExample 23 under the preparing conditions shown in Table 346 by furtherusing SiF₄ gas and NaNH₂ /He gas upon forming the lower layer in Example23.

When the same evaluation as in Example 349 was conducted for the lightreceiving member for use in electrophotography, satisfactory improvementwas obtained to dots and layer peeling in the same manner as in Example349.

The profile for the content of atoms across the layer thickness near thelower layer wa analyzed by using SIMS in the same manner as in Example349 and the result is shown in FIG. 43(c).

It was found that aluminum atoms, silicon atoms and hydrogen atoms aredistributed in the same manner as in Example 349.

EXAMPLE 357

The lower layer was formed under the preparing conditions shown in Table347 in the same manner as in Example 291 except for using a targetcomposed of Si, Al, Mn instead of a target composed of Si, Al, Mg uponforming the lower layer in Example 291.

Then, a light receiving member for use in electrophotography wasprepared in the same manner as in Example 349 under the preparingconditions shown in 342 by using the device shown in FIG. 37 for formingthe upper layer. When the evaluation was conducted in the same manner,satisfactory improvement to dots and layer peeling was obtained in thesame manner as in Example 349.

The profile for the content of atoms across the layer thickness near thelower layer was analyzed by using SIMS in the manner as in Example 349and the results is shown in FIG. 43(d).

It was found that aluminum atoms, silicon atoms and hydrogen atoms weredistributed in the same manner as in Example 349.

In the following Tables 1 to 346, the mark "*" means increase of a flowrate at constant proportion;

the mark "**" means decrease of a flow rate at constant proportion;

the term "S-side" means substrate side;

the term "UL-side" means upper layer side;

the term "LL-side" means lower layer side;

the term "U.1st LR-side" means 1st layer region side of the upper layer;

the term "U.2nd LR-side" means 2nd layer region side of the upper layer;

the term "U.3rd LR-side" means 3rd layer region side of the upper layer;

the term "U.4th LR-side" means 4th layer region side of the upper layer;and

the term "FS-side" means free surface side of the upper layer.

                                      TABLE 1                                     __________________________________________________________________________    Order of                                                                              Gases and   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                                 lamination                                                                            their flow rates                                                                          temperature                                                                          power   pressure                                                                           thickness                             (layer name)                                                                          (SCCM)      (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                               __________________________________________________________________________    Lower layer                                                                           SiH.sub.4                                                                           50    250    5       0.4  0.05                                          H.sub.2                                                                             10→200*                                                          AlCl.sub.3 /He                                                                      120→40**                                                 Upper                                                                             1st SiH.sub.4                                                                           100   250    10      0.35 3                                     layer                                                                             layer                                                                             H.sub.2                                                                             100                                                                 region                                                                            NO    30                                                                  2nd SiH.sub.4                                                                           300   250    15      0.5  20                                        layer                                                                             H.sub.2                                                                             300                                                                 region                                                                        3rd SiH.sub.4                                                                           50    250    10      0.4  0.5                                       layer                                                                             CH.sub.4                                                                            500                                                                 region                                                                    __________________________________________________________________________

                                      TABLE 2                                     __________________________________________________________________________    Order of                                                                              Gases and   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                                 lamination                                                                            their flow rates                                                                          temperature                                                                          power   pressure                                                                           thickness                             (layer name)                                                                          (SCCM)      (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                               __________________________________________________________________________    Lower layer                                                                           SiH.sub.4                                                                           50    250    5       0.4  0.05                                          AlCl.sub.3 /He                                                                      120→40**                                                 Upper                                                                             1st SiH.sub.4                                                                           100   250    10      0.35 3                                     layer                                                                             layer                                                                             H.sub.2                                                                             100                                                                 region                                                                            NO    30                                                                  2nd SiH.sub.4                                                                           300   250    15      0.5  20                                        layer                                                                             H.sub.2                                                                             300                                                                 region                                                                        3rd SiH.sub.4                                                                           50    250    10      0.4  0.5                                       layer                                                                             CH.sub.4                                                                            500                                                                 region                                                                    __________________________________________________________________________

                                      TABLE 3                                     __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    5       0.4  0.03                                     H.sub.2   10→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→10**                                                     (UL-side: 0.01 μm)                                                                   10                                                          Upper                                                                             1st SiH.sub.4 100    250    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        10                                                              2nd SiH.sub.4 300    250    15      0.5  20                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 50     250    10      0.4  0.5                                  layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 4                                     __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     150    0.5     0.3  0.02                                     H.sub.2   5→200*                                                                        ↓                                                                             ↓                                              AlCl.sub.3 /He   300    1.5                                                   (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                              Upper                                                                             1st SiH.sub.4 100    270    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        10                                                              2nd SiH.sub.4 300    250    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 5                                     __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250    1       0.3  0.02                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30**                                                   (UL-side: 0.01 μm)                                                                     30→10**                                            Upper                                                                             1st SiH.sub.4   100    250    10      0.35 3                              layer                                                                             layer                                                                             He          100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                     AlCl.sub.3 /He                                                                            0.1                                                               SiF.sub.4   0.5                                                               CH.sub.4    1                                                             2nd SiH.sub.4   300    250    25      0.6  25                                 layer                                                                             He          600                                                           region                                                                            B.sub.2 H.sub.6                                                                           0.3 ppm                                                           AlCl.sub.3 /He                                                                            0.1                                                               SiF.sub.4   0.5                                                               CH.sub.4    1                                                                 NO          0.1                                                           3rd SiH.sub.4   50     250    10      0.4  1                                  layer                                                                             CH.sub.4    500                                                           region                                                                            NO          0.1                                                               N.sub.2     1                                                                 B.sub.2 H.sub.6                                                                           0.3 ppm                                                           Al.sub.2 Cl.sub.3 /He                                                                     0.5                                                               SiF.sub.4   0.5                                                       __________________________________________________________________________

                                      TABLE 6                                     __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    10      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                              Upper                                                                             1st SiH.sub.4 100    250    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  4                                                               2nd SiH.sub.4 400    250    10      0.5  15                                   layer                                                                             Ar        200                                                             region                                                                        3rd SiH.sub.4 100    250    5       0.4  0.3                                  layer                                                                             NH.sub.3  30                                                              region                                                                    __________________________________________________________________________

                                      TABLE 7                                     __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    10      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                              Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6                                                                         1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                               2nd SiH.sub.4 300    300    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                        3rd SiH.sub.4 100    300    15      0.4  7                                    layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                        4th SiH.sub.4 40     300    10      0.4  0.1                                  layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 8                                     __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     330    5       0.4  0.05                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                             Upper                                                                             1st SiH.sub.4 100    330    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NO        10                                                              2nd SiH.sub.4 400    330    25      0.5  25                                   layer                                                                             SiF.sub.4 10                                                              region                                                                            H.sub.2   800                                                             3rd SiH.sub.4 100    350    15      0.4  5                                    layer                                                                             CH.sub.4  400                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     5000 ppm                                                        4th SiH.sub.4 20     350    10      0.4  1                                    layer                                                                             CH.sub.4  400                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     8000 ppm                                                    __________________________________________________________________________

                                      TABLE 9                                     __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      300    1       0.3  0.02                                    H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                              Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     900→600 ppm**                                                N.sub.2   150                                                             2nd SiH.sub.4 300     300    20      0.5  20                                  layer                                                                             H.sub.2   200                                                             region                                                                        3rd SiH.sub.4 50      300    20      0.4  5                                   layer                                                                             N.sub.2   500                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                        4th SiH.sub.4 40      300    10      0.4  0.3                                 layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 10                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    5       0.4  0.05                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                             Upper                                                                             1st SiH.sub.4 100    250    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                               2nd SiH.sub.4 300    250    15      0.5  10                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 200    250    15      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         10→20*                                                   region                                                                            NO        1                                                           __________________________________________________________________________

                                      TABLE 11                                    __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250    1       0.4  0.02                                    H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                              Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     900→600 ppm**                                                N.sub.2   150                                                             2nd SiH.sub.4 300     300    20      0.5  5                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 100     300    15      0.4  20                                  layer                                                                             CH.sub.4  100                                                             region                                                                        4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 12                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    5       0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                              Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 100    300    5       0.2  8                                    layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.3  50                                                              region                                                                        4th SiH.sub.4 100    300    10      0.4  0.3                                  layer                                                                             NH.sub.3  50                                                              region                                                                    __________________________________________________________________________

                                      TABLE 13                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    5       0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                              Upper                                                                             1st SiH.sub.4 100    280    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NO        10                                                              2nd SiH.sub.4 100    300    3       0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                             3rd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                          4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 14                                    __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250    5       0.4  0.05                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                            200→20**                                           Upper                                                                             1st SiH.sub.4   100    300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                 2nd Si.sub.2 H.sub.6                                                                          200    300    10      0.5  10                                 layer                                                                             H.sub.2     200                                                           region                                                                        3rd SiH.sub.4   300    330    20      0.4  30                                 layer                                                                             C.sub.2 H.sub.2                                                                           50                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                       4th SiH.sub.4   200    330    10      0.4  1                                  layer                                                                             C.sub.2 H.sub.2                                                                           200                                                           region                                                                    __________________________________________________________________________

                                      TABLE 15                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    5       0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                              Upper                                                                             1st SiH.sub.4 100    270    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 100    300    5       0.2  8                                    layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.3  30→50*                                                   region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                          4th SiH.sub.4 100    300    5       0.4  0.7                                  layer                                                                             NH.sub.3  80→100*                                                  region                                                                            PH.sub.3 (against SiH.sub.4)                                                            500 ppm                                                     __________________________________________________________________________

                                      TABLE 16                                    __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250    1       0.4  0.02                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30**                                                   (UL-side: 0.01 μm)                                                                     30→10**                                            Upper                                                                             1st SiH.sub.4   100    250    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                 2nd SiH.sub.4   300    300    20      0.5  20                                 layer                                                                             H.sub.2     500                                                           region                                                                        3rd SiH.sub.4   100    300    5       0.4  1                                  layer                                                                             GeH.sub.4   10→50*                                                 region                                                                            H.sub.2     300                                                           4th SiH.sub.4   100→40**                                                                      300    10      0.4  1                                  layer                                                                             CH.sub.4    100→600*                                               region                                                                    __________________________________________________________________________

                                      TABLE 17                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     300    1       0.3  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                              Upper                                                                             1st SiH.sub.4 85     300    9       0.35 3                                layer                                                                             layer                                                                             H.sub.2   90                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        9                                                               2nd SiH.sub.4 300    300    15      0.5  20                                   layer                                                                             H.sub.2   400                                                             region                                                                        3rd SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 18                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     300    0.7     0.3  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                              Upper                                                                             1st SiH.sub.4 70     300    8       0.35 3                                layer                                                                             layer                                                                             H.sub.2   80                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        8                                                               2nd SiH.sub.4 200    300    12      0.4  20                                   layer                                                                             H.sub.2   400                                                             region                                                                        3rd SiH.sub.4 40     300    7       0.3  0.5                                  layer                                                                             CH.sub.4  400                                                             region                                                                    __________________________________________________________________________

                                      TABLE 19                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 25     300    0.5     0.2  0.02                                     H.sub.2   5→100*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→15**                                                     (UL-side: 0.01 μm)                                                                   15→5**                                               Upper                                                                             1st SiH.sub.4 55     300    7       0.35 3                                layer                                                                             layer                                                                             H.sub.2   70                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        7                                                               2nd SiH.sub.4 150    300    10      0.4  20                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 30     300    5       0.3  0.5                                  layer                                                                             CH.sub.4  300                                                             region                                                                    __________________________________________________________________________

                                      TABLE 20                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 20     300    0.3     0.2  0.02                                     H.sub.2   5→100*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    80→15**                                                      (UL-side: 0.01 μm)                                                                   15→5**                                               Upper                                                                             1st SiH.sub.4 45     300    6       0.35 3                                layer                                                                             layer                                                                             H.sub.2   60                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        5                                                               2nd SiH.sub.4 100    300    6       0.3  20                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 20     300    3       0.2  0.5                                  layer                                                                             CH.sub.4  200                                                             region                                                                    __________________________________________________________________________

                                      TABLE 21                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     500    5       0.4  0.05                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                             Upper                                                                             1st SiH.sub.4 180    500    22      0.4  4                                layer                                                                             layer                                                                             H.sub.2   1200                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     700 ppm                                                             C.sub.2 H.sub.2                                                                         8                                                               2nd SiH.sub.4 300    500    30      0.5  10                                   layer                                                                             H.sub.2   1500                                                            region                                                                        3rd SiH.sub.4 200    500    30      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         10→20*                                                   region                                                                            NO        1                                                           __________________________________________________________________________

                                      TABLE 22                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 150    250    0.5     0.6  0.02                                     H.sub.2   20→500*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    400→80**                                                     (UL-side: 0.01 μm)                                                                   80→50**                                              Upper                                                                             1st SiH.sub.4 350    250    0.5     0.5  3                                layer                                                                             layer                                                                             H.sub.2   350                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     600 ppm                                                             NO        13                                                                  SiF.sub.4 20                                                              2nd SiH.sub.4 700    250    0.5     0.5  20                                   layer                                                                             SiF.sub.4 30                                                              region                                                                            H.sub.2   500                                                             3rd SiH.sub.4 150    250    0.5     0.3  1                                    layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 23                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    5       0.4  0.05                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                             Upper                                                                             1st SiH.sub.4 100    250    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                               2nd SiH.sub.4 200    250    15      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         10→20*                                                   region                                                                            NO        1                                                               3rd SiH.sub.4 300    250    15      0.5  10                                   layer                                                                             H.sub.2   300                                                             region                                                                    __________________________________________________________________________

                                      TABLE 24                                    __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250    1       0.4  0.02                                    H.sub.2   10→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                              Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     900→600 ppm**                                                N.sub.2   150                                                             2nd SiH.sub.4 100     300    15      0.4  20                                  layer                                                                             CH.sub.4  100                                                             region                                                                        3rd SiH.sub.4 300     300    20      0.5  5                                   layer                                                                             H.sub.2   300                                                             region                                                                        4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 25                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    5       0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                              Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.3  50                                                              region                                                                        3rd SiH.sub.4 100    300    5       0.2  8                                    layer                                                                             H.sub.2   300                                                             region                                                                        4th SiH.sub.4 100    300    10      0.4  0.3                                  layer                                                                             NH.sub.3  50                                                              region                                                                    __________________________________________________________________________

                                      TABLE 26                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    5       0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                              Upper                                                                             1st SiH.sub.4 100    250    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NO        10                                                              2nd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                          3rd SiH.sub.4 100    300    3       0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 27                                    __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250    5       0.4  0.05                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                            200→20**                                           Upper                                                                             1st SiH.sub.4   100    300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                 2nd SiH.sub.4   300    330    20      0.4  30                                 layer                                                                             C.sub.2 H.sub.2                                                                           50                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                       3rd Si.sub.2 H.sub.6                                                                          200    300    10      0.5  10                                 layer                                                                             H.sub.2     200                                                           region                                                                        4th SiH.sub.4   200    330    10      0.4  1                                  layer                                                                             C.sub.2 H.sub.2                                                                           200                                                           region                                                                    __________________________________________________________________________

                                      TABLE 28                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    5       0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                              Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.3  30→50*                                                   region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                          3rd SiH.sub.4 100    300    5       0.2  8                                    layer                                                                             H.sub.2   300                                                             region                                                                        4th SiH.sub.4 100    300    5       0.4  0.7                                  layer                                                                             NH.sub.3  80→100*                                                  region                                                                            PH.sub.3 (against SiH.sub.4)                                                            500 ppm                                                     __________________________________________________________________________

                                      TABLE 29                                    __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250    1       0.3  0.02                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30**                                                   (UL-side: 0.01 μm)                                                                     30→10**                                            Upper                                                                             1st SiH.sub.4   100    250    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                 2nd SiH.sub.4   300    250    25      0.6  25                                 layer                                                                             He          600                                                           region                                                                        3rd SiH.sub.4   50     250    10      0.4  1                                  layer                                                                             CH.sub.4    500                                                           region                                                                            NO          0.1                                                               N.sub.2     1                                                         __________________________________________________________________________

                                      TABLE 30                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    10      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                              Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                                   AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                             2nd SiH.sub.4 300    300    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                         3rd SiH.sub.4 100    300    15      0.4  7                                    layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                         4th SiH.sub.4 40     300    10      0.4  0.1                                  layer                                                                             CH.sub.4  600                                                             region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                             PH.sub.3  0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 31                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    5       0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                              Upper                                                                             1st SiH.sub.4 100    280    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NO        10                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 CH.sub.4  1                                                               2nd SiH.sub.4 100    300    3       0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                                 PH.sub.3  0.3 ppm                                                             NO        0.1                                                                 CH.sub.4  1                                                                   AlCl.sub.3 /He                                                                          0.1                                                             3rd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                              AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 PH.sub.3  0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 32                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    5       0.4  0.03                                     H.sub.2   10→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→10**                                                     (UL-side: 0.01 μm)                                                                   10                                                          Upper                                                                             1st SiH.sub.4 100    250    10      0.5  2                                layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1500 ppm                                                        region                                                                            C.sub.2 H.sub.2                                                                         13                                                                  H.sub.2   300                                                                 NO        1                                                               2nd SiH.sub.4 100    250    25      0.5  22                                   layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     40 ppm                                                          region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  H.sub.2   300                                                             3rd SiH.sub.4 100    250    20      0.5  5                                    layer                                                                             C.sub.2 H.sub.2                                                                         10                                                              region                                                                            H.sub.2   150                                                             4th SiH.sub.4 60     250    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         60                                                              region                                                                            H.sub.2   50                                                          __________________________________________________________________________

                                      TABLE 33                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    5       0.4  0.03                                     H.sub.2   10→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→10**                                                     (UL-side: 0.01 μm)                                                                   10                                                          Upper                                                                             1st SiH.sub.4 100    250    10      0.5  2                                layer                                                                             layer                                                                             PH.sub.3 (against SiH.sub.4)                                                            1500 ppm                                                        region                                                                            C.sub.2 H.sub.2                                                                         13                                                                  H.sub.2   300                                                                 NO        1                                                               2nd SiH.sub.4 100    250    25      0.5  22                                   layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            H.sub.2   300                                                             3rd SiH.sub.4 100    250    20      0.5  5                                    layer                                                                             C.sub.2 H.sub.2                                                                         10                                                              region                                                                            H.sub.2   150                                                             4th SiH.sub.4 60     250    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         60                                                              region                                                                            H.sub.2   50                                                          __________________________________________________________________________

                                      TABLE 34                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    5       0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                              Upper                                                                             1st SiH.sub.4 100    300    10      0.4  3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                                   SiF.sub.4 0.5                                                                 NO        0.3                                                                 H.sub.2 S (against SiH.sub.4)                                                           1 ppm                                                               AlCl.sub.3 /He                                                                          0.5                                                             2nd SiH.sub.4 100    300    15      0.5  3                                    layer                                                                             H.sub.2   500                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.5 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 SiF.sub.4 0.2                                                                 NO        0.1                                                                 H.sub.2 S (against SiH.sub.4)                                                           0.4 ppm                                                             AlCl.sub.3 /He                                                                          0.2                                                             3rd SiH.sub.4 100    300    25      0.6  30                                   layer                                                                             CH.sub.4  600                                                             region                                                                            H.sub.2   300                                                                 PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.5 ppm                                                             SiF.sub.4 0.2                                                                 NO        0.2                                                                 H.sub.2 S (against SiH.sub.4)                                                           0.8 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                             4th SiH.sub.4 30     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            1 ppm                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.5 ppm                                                             H.sub.2 S (against SiH.sub.4)                                                           0.8 ppm                                                             SiF.sub.4 0.5                                                                 NO        0.6                                                                 AlCl.sub.3 /He                                                                          0.5                                                         __________________________________________________________________________

                                      TABLE 35                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    5       0.4  0.05                                     B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             H.sub.2   10→200*                                                      AlCl.sub.3 /He                                                                          120→40**                                             Upper                                                                             1st SiH.sub.4 100    250    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            NO        30                                                              2nd SiH.sub.4 300    250    15      0.5  20                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 50     250    10      0.4  0.5                                  layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 36                                    __________________________________________________________________________    Order of                                                                              Gases and    Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                                lamination                                                                            their flow rates                                                                           temperature                                                                          power   pressure                                                                           thickness                            (layer name)                                                                          (SCCM)       (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                              __________________________________________________________________________    Lower layer                                                                           SiH.sub.4                                                                           50     250    5       0.4  0.05                                         AlCl.sub.3 /He                                                                      120→40**                                                 Upper                                                                             1st SiH.sub.4                                                                           100    250    10      0.35 3                                    layer                                                                             layer                                                                             H.sub.2                                                                             100                                                                 region                                                                            NO    30                                                                  2nd SiH.sub.4                                                                           300    250    15      0.5  20                                       layer                                                                             H.sub.2                                                                             300                                                                 region                                                                        3rd SiH.sub.4                                                                           50     250    10      0.4  0.5                                      layer                                                                             CH.sub.4                                                                            500                                                                 region                                                                    __________________________________________________________________________

                                      TABLE 37                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    5       0.4  0.03                                     B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             H.sub.2   10→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→10**                                                     (UL-side: 0.02 μm)                                                                   10                                                          Upper                                                                             1st SiH.sub.4 100    250    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        10                                                              2nd SiH.sub.4 300    250    15      0.5  20                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 50     250    10      0.4  0.5                                  layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 38                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     150    0.5     0.3  0.02                                     H.sub.2   5→200*                                                                        ↓                                                                             ↓                                              AlCl.sub.3 /He   300    1.5                                                   (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                     Upper                                                                             1st SiH.sub.4 100    270    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        10                                                              2nd SiH.sub.4 300    250    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 39                                    __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250    1       0.3  0.02                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30**                                                   (UL-side: 0.01 μm)                                                                     30→10**                                                    B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                   Upper                                                                             1st SiH.sub.4   100    250    10      0.35 3                              layer                                                                             layer                                                                             He          100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                     AlCl.sub.3 /He                                                                            0.1                                                               SiF.sub.4   0.5                                                               CH.sub.4    1                                                             2nd SiH.sub.4   300    250    25      0.6  25                                 layer                                                                             He          600                                                           region                                                                            B.sub.2 H.sub.6                                                                           0.3 ppm                                                           AlCl.sub.3 /He                                                                            0.1                                                               SiF.sub.4   0.5                                                               CH.sub.4    1                                                                 NO          0.1                                                           3rd SiH.sub.4   50     250    10      0.4  1                                  layer                                                                             CH.sub.4    500                                                           region                                                                            NO          0.1                                                               N.sub.2     1                                                                 B.sub.2 H.sub.6                                                                           0.3 ppm                                                           AlCl.sub.3 /He                                                                            0.5                                                               SiF.sub.4   0.5                                                       __________________________________________________________________________

                                      TABLE 40                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    10      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      PH.sub.3 (against SiH.sub.4)                                                            100 ppm                                                     Upper                                                                             1st SiH.sub.4 100    250    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  4                                                               2nd SiH.sub.4 400    250    10      0.5  15                                   layer                                                                             Ar        200                                                             region                                                                        3rd SiH.sub.4 100    250    5       0.4  0.3                                  layer                                                                             NH.sub.3  30                                                              region                                                                    __________________________________________________________________________

                                      TABLE 41                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    10      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     80 ppm                                                      Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                               2nd SiH.sub.4 300    300    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                        3rd SiH.sub.4 100    300    15      0.4  7                                    layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                        4th SiH.sub.4 40     300    10      0.4  0.1                                  layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 42                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     330    5       0.4  0.05                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                                     PH.sub.3 (against SiH.sub.4)                                                            60 ppm                                                      Upper                                                                             1st SiH.sub.4 100    330    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NO        10                                                              2nd SiH.sub.4 400    330    25      0.5  25                                   layer                                                                             SiF.sub.4 10                                                              region                                                                            H.sub.2   800                                                             3rd SiH.sub.4 100    350    15      0.4  5                                    layer                                                                             CH.sub.4  400                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     5000 ppm                                                        4th SiH.sub.4 20     350    10      0.4  1                                    layer                                                                             CH.sub.4  400                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     8000 ppm                                                    __________________________________________________________________________

                                      TABLE 43                                    __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      300    1       0.3  0.02                                    H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     60→100*                                              Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     900→600 ppm**                                                N.sub.2   150                                                             2nd SiH.sub.4 300     300    20      0.5  20                                  layer                                                                             H.sub.2   200                                                             region                                                                        3rd SiH.sub.4 50      300    20      0.4  5                                   layer                                                                             N.sub.2   500                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                        4th SiH.sub.4 40      300    10      0.4  0.3                                 layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 44                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    5       0.4  0.05                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                                     B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                      Upper                                                                             1st SiH.sub.4 100    250    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                               2nd SiH.sub.4 300    250    15      0.5  10                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 200    250    15      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         10→20*                                                   region                                                                            NO        1                                                           __________________________________________________________________________

                                      TABLE 45                                    __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250    1       0.4  0.02                                    H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10→150 ppm*                                          Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     900→600 ppm*                                                 N.sub.2   150                                                             2nd SiH.sub.4 300     300    20      0.5  5                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 100     300    15      0.4  20                                  layer                                                                             CH.sub.4  100                                                             region                                                                        4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 46                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    5       0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      PH.sub.3 (against SiH.sub.4)                                                            5→200 ppm*                                           Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 100    300    5       0.2  8                                    layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.3  50                                                              region                                                                        4th SiH.sub.4 100    300    10      0.4  0.3                                  layer                                                                             NH.sub.3  50                                                              region                                                                    __________________________________________________________________________

                                      TABLE 47                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    5       0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      PH.sub.3 (against SiH.sub.4)                                                            100 ppm                                                     Upper                                                                             1st SiH.sub.4 100    280    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NO        10                                                              2nd SiH.sub.4 100    300    3       0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                             3rd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            PH.sub.3 (against SiH.sub. 4)                                                           50 ppm                                                          4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 48                                    __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250    5       0.4  0.05                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                            200→20**                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                       30 ppm                                                    Upper                                                                             1st SiH.sub.4   100    300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                 2nd SiH.sub.4   200    300    10      0.5  10                                 layer                                                                             H.sub.2     200                                                           region                                                                        3rd SiH.sub.4   300    330    20      0.4  30                                 layer                                                                             C.sub.2 H.sub.2                                                                           50                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                       4th SiH.sub.4   200    330    10      0.4  1                                  layer                                                                             C.sub.2 H.sub.2                                                                           200                                                           region                                                                    __________________________________________________________________________

                                      TABLE 49                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    5       0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     50 ppm                                                      Upper                                                                             1st SiH.sub.4 100    270    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 100    300    5       0.2  8                                    layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.3  30→50*                                                   region                                                                            PH.sub.3 (against SiH.sub. 4)                                                           50 ppm                                                          4th SiH.sub.4 100    300    5       0.4  0.7                                  layer                                                                             NH.sub.3  80→100*                                                  region                                                                            PH.sub.3 (against SiH.sub.4)                                                            500 ppm                                                     __________________________________________________________________________

                                      TABLE 50                                    __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250    1       0.4  0.02                                   H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     80→150 ppm                                           Upper                                                                             1st SiH.sub.4   100    250    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                 2nd SiH.sub.4   300    300    20      0.5  20                                 layer                                                                             H.sub.2     500                                                           region                                                                        3rd SiH.sub.4   100    300    5       0.4  1                                  layer                                                                             GeH.sub.4   10→50*                                                 region                                                                            H.sub.2     300                                                           4th SiH.sub.4   100→40**                                                                      300    10      0.4  1                                  layer                                                                             CH.sub.4    100→600*                                               region                                                                    __________________________________________________________________________

                                      TABLE 51                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     300    1       0.3  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     70 ppm                                                      Upper                                                                             1st SiH.sub.4 85     300    9       0.35 3                                layer                                                                             layer                                                                             H.sub.2   90                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        9                                                               2nd SiH.sub.4 300    300    15      0.5  20                                   layer                                                                             H.sub.2   400                                                             region                                                                        3rd SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 52                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     300    0.7     0.3  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     70 ppm                                                      Upper                                                                             1st SiH.sub.4 70     300    8       0.35 3                                layer                                                                             layer                                                                             H.sub.2   80                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        8                                                               2nd SiH.sub.4 200    300    12      0.4  20                                   layer                                                                             H.sub.2   400                                                             region                                                                        3rd SiH.sub.4 40     300    7       0.3  0.5                                  layer                                                                             CH.sub.4  400                                                             region                                                                    __________________________________________________________________________

                                      TABLE 53                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 25     300    0.5     0.2  0.02                                     H.sub.2   5→100*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→15**                                                     (UL-side: 0.01 μm)                                                                   15→5**                                                       B.sub.2 H.sub.6 (against SiH.sub.4)                                                     70 ppm                                                      Upper                                                                             1st SiH.sub.4 55     300    7       0.35 3                                layer                                                                             layer                                                                             H.sub.2   70                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        7                                                               2nd SiH.sub.4 150    300    10      0.4  20                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 30     300    5       0.3  0.5                                  layer                                                                             CH.sub.4  300                                                             region                                                                    __________________________________________________________________________

                                      TABLE 54                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 20     300    0.3     0.2  0.02                                     H.sub.2   5→100*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    80→15**                                                      (UL-side: 0.01 μm)                                                                   15→5**                                                       B.sub.2 H.sub.6 (against SiH.sub.4)                                                     70 ppm                                                      Upper                                                                             1st SiH.sub.4 45     300    6       0.35 3                                layer                                                                             layer                                                                             H.sub.2   60                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        5                                                               2nd SiH.sub.4 100    300    6       0.3  20                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 20     300    3       0.2  0.5                                  layer                                                                             CH.sub.4  200                                                             region                                                                    __________________________________________________________________________

                                      TABLE 55                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     500    5       0.4  0.05                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                                     B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10→30 ppm                                            Upper                                                                             1st SiH.sub.4 180    500    22      0.4  4                                layer                                                                             layer                                                                             H.sub.2   1200                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     700 ppm                                                             C.sub.2 H.sub.2                                                                         8                                                               2nd SiH.sub.4 300    500    30      0.5  10                                   layer                                                                             H.sub.2   1500                                                            region                                                                        3rd SiH.sub.4 200    500    30      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         10→20*                                                   region                                                                            NO        1                                                           __________________________________________________________________________

                                      TABLE 56                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 150    250    0.5     0.6  0.02                                     H.sub.2   20→500*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    400→80**                                                     (UL-side: 0.01 μm)                                                                   80→50**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     30 ppm                                                      Upper                                                                             1st SiH.sub.4 350    250    0.5     0.5  3                                layer                                                                             layer                                                                             H.sub.2   350                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     600 ppm                                                             NO        13                                                                  SiF.sub.4 20                                                              2nd SiH.sub.4 700    250    0.5     0.5  20                                   layer                                                                             SiF.sub.4 30                                                              region                                                                            H.sub.2   500                                                             3rd SiH.sub.4 150    250    0.5     0.3  1                                    layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 57                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    5       0.4  0.05                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                                     B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                      Upper                                                                             1st SiH.sub.4 100    250    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                               2nd SiH.sub.4 200    250    15      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         10→20*                                                   region                                                                            NO        1                                                               3rd SiH.sub.4 300    250    15      0.5  10                                   layer                                                                             H.sub.2   300                                                             region                                                                    __________________________________________________________________________

                                      TABLE 58                                    __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10→150 ppm*                                          Upper                                                                             1st SiH.sub.4 350     300    10       0.35                                                                              3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     900→600 ppm**                                                N.sub.2   150                                                             2nd SiH.sub.4 100     300    15      0.4  20                                  layer                                                                             CH.sub.2  100                                                             region                                                                        3rd SiH.sub.4 300     300    20      0.5  5                                   layer                                                                             H.sub.2   300                                                             region                                                                        4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 59                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rate  temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    0.5     0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      PH.sub.3 (against SiH.sub.4)                                                            5→200 ppm*                                           Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.3  50                                                              region                                                                        3rd SiH.sub.4 100    300    5       0.2  8                                    layer                                                                             H.sub.2   300                                                             region                                                                        4th SiH.sub.4 100    300    10      0.4  0.3                                  layer                                                                             NH.sub.3  50                                                              region                                                                    __________________________________________________________________________

                                      TABLE 60                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250     5      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      PH.sub.3 (against SiH.sub.4)                                                            100 ppm                                                     Upper                                                                             1st SiH.sub.4 100    250    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NO        10                                                              2nd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                          3rd SiH.sub.4 100    300     3      0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 61                                    __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     5      0.4  0.05                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                            200→20**                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                       30 ppm                                                    Upper                                                                             1st SiH.sub.4   100    300    10       0.35                                                                              3                              layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                 2nd SiH.sub.4   300    330    20      0.4  30                                 layer                                                                             C.sub.2 H.sub.2                                                                           50                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                       3rd Si.sub.2 H.sub.4                                                                          200    300    10      0.5  10                                 layer                                                                             H.sub.2     200                                                           region                                                                        4th SiH.sub.4   200    330    10      0.4  1                                  layer                                                                             C.sub.2 H.sub.2                                                                           200                                                           region                                                                    __________________________________________________________________________

                                      TABLE 62                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250     5      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     50 ppm                                                      Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.3  30→5**                                                   region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                          3rd SiH.sub.4 100    300     5      0.2  8                                    layer                                                                             H.sub.2   300                                                             region                                                                        4th SiH.sub.4 100    300     5      0.4  0.7                                  layer                                                                             NH.sub.3  80→100*                                                  region                                                                            PH.sub.3 (against SiH.sub.4)                                                            500 ppm                                                     __________________________________________________________________________

                                      TABLE 63                                    __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     1      0.3  0.02                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30**                                                   (UL-side: 0.01 μm)                                                                     30→10**                                                    B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                   Upper                                                                             1st SiH.sub.4   100    250    25       0.35                                                                              3                              layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                 2nd SiH.sub.4   300    250    25      0.6  25                                 layer                                                                             He          600                                                           region                                                                        3rd SiH.sub.4   50     250    10      0.4  1                                  layer                                                                             CH.sub.4    500                                                           region                                                                            NO          0.1                                                               N.sub.2     1                                                         __________________________________________________________________________

                                      TABLE 64                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    10      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     80 ppm                                                      Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                                   AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                             2nd SiH.sub.4 300    300    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                            C.sub. 2 H.sub.2                                                                        0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                         3rd SiH.sub.4 100    300    15      0.4  7                                    layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                             4th SiH.sub.4 40     300    10      0.4  0.1                                  layer                                                                             CH.sub.4  600                                                             region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 PH.sub.3  0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 65                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250     5      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      PH.sub.3 (against SiH.sub.4)                                          Upper                                                                             1st SiH.sub.4 100    280    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NO        10                                                                  AlCl.sub.3                                                                              0.1                                                                 SiF.sub.4 0.5                                                                 CH.sub.4  1                                                               2nd SiH.sub.4 100    300     3      0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                                 PH.sub.3 (against SiH.sub.4)                                                            0.3 ppm                                                             NO        10                                                                  CH.sub.4  1                                                                   AlCl.sub.3                                                                              0.1                                                             3rd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                              AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 PH.sub.3 (against SiH.sub.4)                                                            0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 66                                    __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     5      0.4  0.03                                    H.sub.2   10→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→10**                                                     (UL-side: 0.02 μm)                                                                   10                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     150→200 ppm*                                         Upper                                                                             1st SiH.sub.4 100     250    25      0.5  2                               layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1500 ppm                                                        region                                                                            C.sub.2 H.sub.2                                                                         13                                                                  H.sub.2   300                                                                 NO        1                                                               2nd SiH.sub.4 100     250    25      0.5  22                                  layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     40 ppm                                                          region                                                                            C.sub.2 H.sub. 2                                                                        15                                                                  H.sub.2   300                                                             3rd SiH.sub.4 100     250    20      0.5  5                                   layer                                                                             C.sub.2 H.sub.2                                                                         10                                                              region                                                                            H.sub.2   150                                                             4th SiH.sub.4 60      250    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         60                                                              region                                                                            H.sub.2   50                                                          __________________________________________________________________________

                                      TABLE 67                                    __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     5      0.4  0.03                                    H.sub.2   10→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→10**                                                     (UL-side: 0.02 μm)                                                                   10                                                                  PH.sub.3 (against SiH.sub.4)                                                            120→180 ppm*                                         Upper                                                                             1st SiH.sub.4 100     250    10      0.5  2                               layer                                                                             layer                                                                             PH.sub.3 (against SiH.sub.4)                                                            1500 ppm                                                        region                                                                            C.sub.2 H.sub.2                                                                         13                                                                  H.sub.2   300                                                                 NO        1                                                               2nd SiH.sub.4 100     250    25      0.5  22                                  layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            H.sub.2   300                                                             3rd SiH.sub. 4                                                                              100     250    20      0.5  5                                   layer                                                                             C.sub.2 H.sub.2                                                                         10                                                              region                                                                            H.sub.2   150                                                             4th SiH.sub.4 60      250    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         60                                                              region                                                                            H.sub.2   50                                                          __________________________________________________________________________

                                      TABLE 68                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250     5      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     80 ppm                                                      Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                                   H.sub.2 S 1 ppm                                                           2nd SiH.sub.4 100    300     3      0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                                 H.sub.2 S 1 ppm                                                           3rd SiH.sub. 4                                                                              100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                              H.sub.2 S 1 ppm                                                           4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                            H.sub.2 S 1 ppm                                                       __________________________________________________________________________

                                      TABLE 69                                    __________________________________________________________________________    Order of                                                                              Gases and    Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                                lamination                                                                            their flow rates                                                                           temperature                                                                          power   pressure                                                                           thickness                            (layer name)                                                                          (SCCM)       (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                              __________________________________________________________________________    Lower layer                                                                           SiH.sub.4                                                                           50     250     5      0.4  0.05                                         H.sub.2                                                                             10→200*                                                          AlCl.sub.3 /He                                                                      120→40**                                                         NO    5                                                               Upper                                                                             1st SiH.sub.4                                                                           100    250    10       0.35                                                                              3                                    layer                                                                             layer                                                                             H.sub.2                                                                             100                                                                 region                                                                            NO    30                                                                  2nd SiH.sub.4                                                                           300    250    15      0.5  20                                       layer                                                                             H.sub.2                                                                             300                                                                 region                                                                        3rd SiH.sub.4                                                                           50     250    10      0.4  0.5                                      layer                                                                             CH.sub.4                                                                            500                                                                 region                                                                    __________________________________________________________________________

                                      TABLE 70                                    __________________________________________________________________________    Order of                                                                              Gases and    Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                                lamination                                                                            their flow rates                                                                           temperature                                                                          power   pressure                                                                           thickness                            (layer name)                                                                          (SCCM)       (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                              __________________________________________________________________________    Lower layer                                                                           SiH.sub.4                                                                           50     250     5      0.4  0.05                                         AlCl.sub.3 /He                                                                      120→40**                                                 Upper                                                                             1st SiH.sub.4                                                                           100    250    10       0.35                                                                              3                                    layer                                                                             layer                                                                             H.sub.2                                                                             100                                                                 region                                                                            NO    30                                                                  2nd SiH.sub.4                                                                           300    250    15      0.5  20                                       layer                                                                             H.sub.2                                                                             300                                                                 region                                                                        3rd SiH.sub.4                                                                           50     250    10      0.4  0.5                                      layer                                                                             CH.sub.4                                                                            500                                                                 region                                                                    __________________________________________________________________________

                                      TABLE 71                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     5      0.4  0.03                                     H.sub.2   10→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→10**                                                     (UL-side: 0.01 μm)                                                                   10                                                                  NO        5                                                           Upper                                                                             1st SiH.sub.4 100    250    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        10                                                              2nd SiH.sub.4 300    250    15      0.5  20                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 50     250    10      0.4  0.5                                  layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 72                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     150    0.5     0.3  0.02                                     H.sub.2   5→200*                                                                        ↓                                                                             ↓                                              AlCl.sub.3 /He   300    1.5                                                   (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      NO        5                                                           Upper                                                                             1st SiH.sub.4 100    270    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        10                                                              2nd SiH.sub.4 300    250    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 73                                    __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     1      0.3  0.02                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30**                                                   (UL-side: 0.01 μm)                                                                     30→10**                                                    NO          10                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           CH.sub.4    1                                                         Upper                                                                             1st SiH.sub.4   100    250    10       0.35                                                                              3                              layer                                                                             layer                                                                             He          100                                                           region                                                                            AlCl.sub.3 /He                                                                            0.3                                                               SiF.sub.4   0.5                                                               CH.sub.4    1                                                                 NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                     B.sub.2 H.sub. 6 (against SiH.sub.4)                                                      800 ppm                                                       2nd SiH.sub.4   300    250    25      0.6  25                                 layer                                                                             He          600                                                           region                                                                            AlCl.sub.3 /He                                                                            0.1                                                               SiF.sub.4   0.2                                                               CH.sub.4    0.5                                                               NO          0.1                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                       3rd SiH.sub.4   50     250    10      0.4  1                                  layer                                                                             CH.sub.4    500                                                           region                                                                            NO          0.5                                                               SiF.sub.4   0.7                                                               AlCl.sub.3 /He                                                                            0.5                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       1 ppm                                                     __________________________________________________________________________

                                      TABLE 74                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    10      0.4  0.2                                      H.sub.2   5→200*                                                       Al(CH.sub.3).sub.3 /He                                                        (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      NH.sub.3  1→4*                                                 Upper                                                                             1st SiH.sub.4 100    250    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  4                                                               2nd SiH.sub.4 400    250    10      0.5  15                                   layer                                                                             Ar        200                                                             region                                                                        3rd SiH.sub.4 100    250     5      0.4  0.3                                  layer                                                                             NH.sub.3  30                                                              region                                                                    __________________________________________________________________________

                                      TABLE 75                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    10      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      C.sub.2 H.sub.2                                                                         1→5*                                                         B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                     Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6                                                                         1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                               2nd SiH.sub.4 300    300    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                        3rd SiH.sub.4 100    300    15      0.4  7                                    layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                        4th SiH.sub.4 40     300    10      0.4  0.1                                  layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 76                                    __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     330     5      0.4  0.05                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                                     NO        5                                                                   PH.sub.3 (against SiH.sub.4)                                                            100 ppm                                                     Upper                                                                             1st SiH.sub.4 100    330    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NO        10                                                              2nd SiH.sub.4 400    330    25      0.5  25                                   layer                                                                             SiF.sub.4 10                                                              region                                                                            H.sub.2   800                                                             3rd SiH.sub.4 100    350    15      0.4  5                                    layer                                                                             CH.sub.4  400                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     5000 ppm                                                        4th SiH.sub.4 20     350    10      0.4  1                                    layer                                                                             CH.sub.4  400                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     8000 ppm                                                    __________________________________________________________________________

                                      TABLE 77                                    __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       300    1       0.3  0.02                                   H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             N.sub.2   100 → 150*                                                   H.sub.2 S 10 ppm                                                      Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     900 → 600 ppm**                                              H.sub.2   150                                                             2nd SiH.sub.4 300      300    20      0.5  20                                 layer                                                                             H.sub.2   200                                                             region                                                                        3rd SiH.sub.4 50       300    20      0.4  5                                  layer                                                                             N.sub.2   500                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                        4th SiH.sub.4 40       300    10      0.4  0.3                                layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 78                                    __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250    5       0.4  0.05                                      H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                          200 → 20**                                                   C.sub.2 H.sub.2                                                                         5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                     Upper                                                                             1st SiH.sub.4 100   250    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                               2nd SiH.sub.4 300   250    15      0.5  10                                    layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 200   250    15      0.4  20                                    layer                                                                             C.sub.2 H.sub.2                                                                         10 → 20*                                                 region                                                                            NO        1                                                           __________________________________________________________________________

                                      TABLE 79                                    __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250    1       0.4  0.02                                   H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    N.sub.2   100                                                                 H.sub.2 S (against SiH.sub.4)                                                           10 ppm                                                      Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     900 → 600 ppm**                                              H.sub.2   150                                                             2nd SiH.sub.4 300      300    20      0.5  5                                  layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 100      300    15      0.4  20                                 layer                                                                             CH.sub.4  100                                                             region                                                                        4th SiH.sub.4 50       300    10      0.4  0.5                                layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 80                                    __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10 → 100*                                                                    300    5       0.4  0.2                                       H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200 → 40**                                                   (UL-side: 0.15 μm)                                                                   40 → 10**                                                    NH.sub.3  1 → 5*                                               Upper                                                                             1st SiH.sub.4 100   300    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 100   300    5       0.2  8                                     layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 300   300    15      0.4  25                                    layer                                                                             NH.sub.3  50                                                              region                                                                        4th SiH.sub.4 100   300    10      0.4  0.3                                   layer                                                                             NH.sub.3  50                                                              region                                                                    __________________________________________________________________________

                                      TABLE 81                                    __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10 → 100*                                                                       250    5       0.4  0.2                                    H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200 → 40**                                                   (UL-side: 0.15 μm)                                                                   40 → 10**                                                    NO        5 → 10*                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 → 100 ppm*                                        Upper                                                                             1st SiH.sub.4 100      280    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        10                                                              2nd SiH.sub.4 100      300    3       0.5  3                                  layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                             3rd SiH.sub.4 100      300    15      0.4  30                                 layer                                                                             CH.sub.4  100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                          4th SiH.sub.4 50       300    10      0.4  0.5                                layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 82                                    __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50    250    5       0.4  0.05                                    H.sub.2     5 → 200*                                                   AlCl.sub.3 /He                                                                            200 → 20**                                                 NO          10                                                                PH.sub.3 (against SiH.sub.4)                                                              100 ppm                                                   Upper                                                                             1st SiH.sub.4   100   300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            PH.sub.3 (against SiH.sub.4)                                                              800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR side: 1 μm)                                                       10 → 0**                                               2nd Si.sub.2 H.sub.6                                                                          200   300    10      0.5  10                                  layer                                                                             H.sub.2     200                                                           region                                                                        3rd SiH.sub.4   300   330    20      0.4  30                                  layer                                                                             C.sub.2 H.sub.2                                                                           50                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                       4th SiH.sub.4   200   330    10      0.4  1                                   layer                                                                             C.sub. 2 H.sub.2                                                                          200                                                           region                                                                    __________________________________________________________________________

                                      TABLE 83                                    __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10 → 100*                                                                    250    5       0.4  0.2                                       H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200 → 40**                                                   (UL-side: 0.15 μm)                                                                   40 → 10**                                                    NH.sub.3  1 → 5*                                                       B.sub.2 H.sub.6 (against SiH.sub.4)                                                     150 ppm                                                     Upper                                                                             1st SiH.sub.4 100   270    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 100   300    5       0.2  8                                     layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 300   300    15      0.4  25                                    layer                                                                             NH.sub.3  30 → 50*                                                 region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                          4th SiH.sub.4 100   300    5       0.4  0.7                                   layer                                                                             NH.sub.3  80 → 100*                                                region                                                                            PH.sub.3 (against SiH.sub.4)                                                            500 ppm                                                     __________________________________________________________________________

                                      TABLE 84                                    __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50    250    1       0.4  0.02                                    H.sub.2     5 → 200*                                                   AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200 → 30**                                                 (UL-side: 0.01 μm)                                                                     30 → 10**                                                  NO          5                                                         Upper                                                                             1st SiH.sub.4   100   250    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10 → 0**                                               2nd SiH.sub.4   300   300    20      0.5  20                                  layer                                                                             H.sub.2     500                                                           region                                                                        3rd SiH.sub.4   100   300    5       0.4  1                                   layer                                                                             GeH.sub.4   10 → 50*                                               region                                                                            H.sub.2     300                                                           4th SiH.sub.4   100 → 40**                                                                   300    10      0.4  1                                   layer                                                                             CH.sub. 4   100 → 600*                                             region                                                                    __________________________________________________________________________

                                      TABLE 85                                    __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    300    1       0.3  0.02                                      H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    NO        9                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     80 ppm                                                      Upper                                                                             1st SiH.sub.4 85    300    9       0.35 3                                 layer                                                                             layer                                                                             H.sub.2   90                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        9                                                               2nd SiH.sub.4 300   300    15      0.5  20                                    layer                                                                             H.sub.2   400                                                             region                                                                        3rd SiH.sub.4 50    300    10      0.4  0.5                                   layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 86                                    __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    300    0.7     0.3  0.02                                      H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    NO        8                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     80 ppm                                                      Upper                                                                             1st SiH.sub.4 70    300    8       0.35 3                                 layer                                                                             layer                                                                             H.sub.2   80                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        8                                                               2nd SiH.sub.4 200   300    12      0.4  20                                    layer                                                                             H.sub.2   400                                                             region                                                                        3rd SiH.sub.4 40    300    7       0.3  0.5                                   layer                                                                             CH.sub.4  400                                                             region                                                                    __________________________________________________________________________

                                      TABLE 87                                    __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 25    300    0.5     0.2  0.02                                      H.sub.2   5 → 100*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100 → 15**                                                   (UL-side: 0.01 μm)                                                                   15 → 5**                                                     NO        7                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     80 ppm                                                      Upper                                                                             1st SiH.sub.4 55    300    7       0.35 3                                 layer                                                                             layer                                                                             H.sub.2   70                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        7                                                               2nd SiH.sub.4 150   300    10      0.4  20                                    layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 30    300    5       0.3  0.5                                   layer                                                                             CH.sub.4  300                                                             region                                                                    __________________________________________________________________________

                                      TABLE 88                                    __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    300    0.3     0.2  0.02                                      H.sub.2   5 → 100*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    85 → 15**                                                    (UL-side: 0.01 μm)                                                                   15 → 5**                                                     NO        5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     80 ppm                                                      Upper                                                                             1st SiH.sub.4 45    300    6       0.35 3                                 layer                                                                             layer                                                                             H.sub.2   60                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        5                                                               2nd SiH.sub.4 100   300    6       0.3  20                                    layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 20    300    3       0.2  0.5                                   layer                                                                             CH.sub.4  200                                                             region                                                                    __________________________________________________________________________

                                      TABLE 89                                    __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    500    5       0.4  0.05                                      H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                          200 → 20**                                                   C.sub.2 H.sub.2                                                                         5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     60 ppm                                                      Upper                                                                             1st SiH.sub.4 180   500    22      0.4  4                                 layer                                                                             layer                                                                             H.sub.2   1200                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     700 ppm                                                             C.sub.2 H.sub.2                                                                         8                                                               2nd SiH.sub.4 300   500    30      0.5  10                                    layer                                                                             H.sub.2   1500                                                            region                                                                        3rd SiH.sub.4 200   500    30      0.4  20                                    layer                                                                             C.sub.2 H.sub.2                                                                         10 → 20*                                                 region                                                                            NO        1                                                           __________________________________________________________________________

                                      TABLE 90                                    __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            μW    Inner                                                                              Layer                            lamination                                                                            their flow rates                                                                              temperature                                                                          discharging                                                                            pressure                                                                           thickness                        (layer name)                                                                          (SCCM)          (°C.)                                                                         power (mW/cm.sup.2)                                                                    (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 150   250    0.5      0.6  0.02                                     H.sub.2   20 → 500*                                                    AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    400 → 80**                                                   (UL-side: 0.01 μm)                                                                   80 → 50**                                                    NO        10                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     60 ppm                                                      Upper                                                                             1st SiH.sub.4 350   250    0.5      0.5  3                                layer                                                                             layer                                                                             H.sub.2   350                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     600 ppm                                                             NO        13                                                                  SiF.sub.4 20                                                              2nd SiH.sub.4 700   250    0.5      0.5  20                                   layer                                                                             SiF.sub.4 30                                                              region                                                                            H.sub.2   500                                                             3rd SiH.sub.4 150   250    0.5      0.3  1                                    layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 91                                    __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250    5       0.4  0.05                                      H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                          200 → 20**                                                   C.sub.2 H.sub.2                                                                         5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                     Upper                                                                             1st SiH.sub.4 100   250    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                               2nd SiH.sub.4 200   250    15      0.4  20                                    layer                                                                             C.sub.2 H.sub.2                                                                         10 → 20*                                                 region                                                                            NO        1                                                               3rd SiH.sub.4 300   250    15      0.5  10                                    layer                                                                             H.sub.2   300                                                             region                                                                    __________________________________________________________________________

                                      TABLE 92                                    __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250    1       0.4  0.02                                   H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    N.sub.2   100                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                      Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     900 → 600 ppm**                                              N.sub.2   150                                                             2nd SiH.sub.4 100      300    15      0.4  20                                 layer                                                                             CH.sub.4  100                                                             region                                                                        3rd SiH.sub.4 300      300    20      0.5  5                                  layer                                                                             H.sub.2   300                                                             region                                                                        4th SiH.sub.4 50       300    10      0.4  0.5                                layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 93                                    __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10 → 100*                                                                    300    5       0.4  0.2                                       H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200 → 40**                                                   (UL-side: 0.15 μm)                                                                   40 → 10**                                                    NH.sub.3  1 → 5*                                               Upper                                                                             1st SiH.sub.4 100   300    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 300   300    15      0.4  25                                    layer                                                                             NH.sub.3  50                                                              region                                                                        3rd SiH.sub.4 100   300    5       0.2  8                                     layer                                                                             H.sub.2   300                                                             region                                                                        4th SiH.sub.4 100   300    10      0.4  0.3                                   layer                                                                             NH.sub.3  50                                                              region                                                                    __________________________________________________________________________

                                      TABLE 94                                    __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10 → 100*                                                                      250    5       0.4  0.2                                     H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200 → 40**                                                   (UL-side: 0.15 μm)                                                                   40 → 10**                                                    PH.sub.3 (against SiH.sub.4)                                                            10 → 100 ppm*                                        Upper                                                                             1st SiH.sub.4 100     250    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NO        10                                                              2nd SiH.sub.4 100     300    15      0.4  30                                  layer                                                                             CH.sub.4  100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                          3rd SiH.sub.4 100     300    3       0.5  3                                   layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                             4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 95                                    __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50    250    5       0.4  0.05                                    H.sub.2     5 → 200*                                                   AlCl.sub.3 /He                                                                            200 → 20**                                                 NO          10                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                   Upper                                                                             1st SiH.sub.4   100   300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 82 m)                                                                         10                                                                (U · 2nd LR-side: 1 μm)                                                       10 → 0**                                               2nd SiH.sub.4   100   330    20      0.4  30                                  layer                                                                             C.sub.2 H.sub.2                                                                           50                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                       3rd Si.sub.2 H.sub.6                                                                          200   300    10      0.5  10                                  layer                                                                             H.sub.2     200                                                           region                                                                        4th SiH.sub.4   200   330    10      0.4  1                                   layer                                                                             C.sub.2 H.sub.2                                                                           200                                                           region                                                                    __________________________________________________________________________

                                      TABLE 96                                    __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10 → 100*                                                                    250    5       0.4  0.2                                       H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200 → 40**                                                   (UL-side: 0.15 μm)                                                                   40 → 10**                                                    NH.sub.3  1 → 5*                                               Upper                                                                             1st SiH.sub.4 100   300    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 300   300    15      0.4  25                                    layer                                                                             NH.sub.3  30 → 50*                                                 region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     50 ppm                                                          3rd SiH.sub.4 100   300    5       0.2  8                                     layer                                                                             H.sub.2   300                                                             region                                                                        4th SiH.sub.4 100   300    5       0.4  0.7                                   layer                                                                             NH.sub.3  80 → 100*                                                region                                                                            PH.sub. 3 (against SiH.sub.4)                                                           500 ppm                                                     __________________________________________________________________________

                                      TABLE 97                                    __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50    250    1       0.3  0.02                                    H.sub.2     5 → 200*                                                   AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                      200 → 30**                                                 (UL-side: 0.15 μm)                                                                     30 → 10**                                                  NO          10                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                   Upper                                                                             1st SiH.sub.4   100   250    10      0.35 3                               layer                                                                             layer                                                                             He          100                                                           region                                                                            NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10 → 0**                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                       2nd SiH.sub.4   300   250    25      0.6  25                                  layer                                                                             He          600                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                       3rd SiH.sub.4   50    250    10      0.4  1                                   layer                                                                             CH.sub.4    500                                                           region                                                                    __________________________________________________________________________

                                      TABLE 98                                    __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10 → 100*                                                                    300    10      0.4  0.2                                       H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200 → 40**                                                   (UL-side: 0.15 μm)                                                                   40 → 10**                                                    C.sub.2 H.sub.2                                                                         1 → 5*                                                       B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                     Upper                                                                             1st SiH.sub.4 100   300    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                                   AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                             2nd SiH.sub.4 300   300    20      0.5  20                                    layer                                                                             H.sub.2   500                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub. 4                                                                              0.5                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                         3rd SiH.sub.4 100   300    15      0.4  7                                     layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                         4th SiH.sub.4 40    300    10      0.4  0.1                                   layer                                                                             CH.sub.4  600                                                             region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                             PH.sub.3  0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 99                                    __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10 → 100*                                                                      250    5       0.4  0.2                                     H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200 → 40**                                                   (UL-side: 0.15 μm)                                                                   40 → 10**                                                    NO        5 → 10 ppm*                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 → 100 ppm*                                        Upper                                                                             1st SiH.sub.4 100     280    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        10                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 CH.sub.4  1                                                               2nd SiH.sub.4 100     300    3       0.5  3                                   layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                                 PH.sub.3  0.3 ppm                                                             NO        0.1                                                                 CH.sub.4  1                                                                   AlCl.sub.3 /He                                                                          0.1                                                             3rd SiH.sub.4 100     300    15      0.4  30                                  layer                                                                             CH.sub.4  100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                              AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                             4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             CH.sub.4  600                                                             region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 PH.sub.3  0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 100                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250    5       0.4  0.03                                      H.sub.2   10 → 200*                                                    AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100 → 10**                                                   (UL-side: 0.01 μm)                                                                   10                                                                  C.sub.2 H.sub.2                                                                         3 → 13*                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                     Upper                                                                             1st SiH.sub.4 100   250    10      0.5  2                                 layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1500 ppm                                                        region                                                                            C.sub.2 H.sub.2                                                                         13                                                                  H.sub.2   300                                                                 NO        1                                                               2nd SiH.sub.4 100   250    25      0.5  22                                    layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     40 ppm                                                          region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  H.sub.2   300                                                             3rd SiH.sub.4 100   250    20      0.5  5                                     layer                                                                             C.sub.2 H.sub.2                                                                         10                                                              region                                                                            H.sub.2   150                                                             4th SiH.sub.4 60    250    10      0.4  0.5                                   layer                                                                             C.sub.2 H.sub.2                                                                         60                                                              region                                                                            H.sub.2   50                                                          __________________________________________________________________________

                                      TABLE 101                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250    5       0.4  0.03                                    H.sub.2   10 → 200*                                                    AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100 → 10**                                                   (UL-side: 0.01 μm)                                                                   10                                                                  C.sub.2 H.sub.2                                                                         3 → 13*                                                      PH.sub.3 (against SiH.sub.4)                                                            10 → 100 ppm*                                        Upper                                                                             1st SiH.sub.4 100     250    10      0.5  2                               layer                                                                             layer                                                                             PH.sub.3 (against SiH.sub.4)                                                            1500 ppm                                                        region                                                                            C.sub.2 H.sub.2                                                                         13                                                                  H.sub.2   300                                                                 NO        1                                                               2nd SiH.sub.4 100     250    25      0.5  22                                  layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            H.sub.2   300                                                             3rd SiH.sub.4 100     250    20      0.5  5                                   layer                                                                             C.sub.2 H.sub.2                                                                         10                                                              region                                                                            H.sub.2   150                                                             4th SiH.sub.4 60      250    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         60                                                              region                                                                            H.sub.2   50                                                          __________________________________________________________________________

                                      TABLE 102                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10 → 100*                                                                    300    10      0.4  0.2                                       H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200 → 40**                                                   (UL-side: 0.15 μm)                                                                   40 → 10**                                                    C.sub.2 H.sub.2                                                                         1 → 5*                                                       B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                     Upper                                                                             1st SiH.sub.4 100   300    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                                   H.sub.2 S 1 ppm                                                               AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                             2nd SiH.sub.4 300   300    20      0.5  20                                    layer                                                                             H.sub.2   500                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 5                                                                   H.sub.2 S 1 ppm                                                               B.sub.2 H.sub.6                                                                         0.3 ppm                                                         3rd SiH.sub.4 100   300    15      0.4  7                                     layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                             H.sub.2 S 1 ppm                                                           4th SiH.sub.4 40    300    10      0.4  0.1                                   layer                                                                             CH.sub.4  600                                                             region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                             PH.sub.3  0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 103                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250    1       0.4  0.02                                      H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    C.sub.2 H.sub.2                                                                         0.1                                                                 NO        5                                                           Upper                                                                             1st SiH.sub.4 100   300    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1   300    20      0.5  5                                     layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         3rd SiF.sub.4 0.5   300    15      0.4  20                                    layer                                                                             AlCl.sub.3 /He                                                                          0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                             4th SiH.sub.4 50    300    10      0.4  0.5                                   layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 104                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250    1       0.4  0.02                                      H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    C.sub.2 H.sub.2                                                                         0.1                                                                 NO        10                                                          Upper                                                                             1st SiH.sub.4 100   300    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1   300    20      0.5  7                                     layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        2                                                                   C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         3rd SiF.sub.4 0.5   300    15      0.4  20                                    layer                                                                             AlCl.sub.3 /He                                                                          0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                             4th SiH.sub.4 50    300    10      0.4  0.5                                   layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 105                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250    1       0.4  0.02                                      H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    C.sub.2 H.sub.2                                                                         0.1                                                                 NO        5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                     Upper                                                                             1st SiH.sub.4 100   300    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1   300    20      0.5  3                                     layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.5 →  2*                                                    B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         3rd SiF.sub.4 0.5   300    15      0.4  20                                    layer                                                                             AlCl.sub.3 /He                                                                          0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                             4th SiH.sub.4 50    300    10      0.4  0.5                                   layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 106                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250    1       0.4  0.02                                    H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    C.sub.2 H.sub.2                                                                         0.1                                                                 NO        10                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                      Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1     300    20      0.5  8                                   layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         1                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     5 → 0.3 ppm**                                            3rd SiF.sub.4 0.5     300    15      0.4  20                                  layer                                                                             AlCl.sub.3 /He                                                                          0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                             4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 107                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50    250    1       0.4  0.02                                    H.sub.2     5 → 200*                                                   AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200 → 30**                                                 (UL-side: 0.01 μm)                                                                     30 → 10**                                                  C.sub.2 H.sub.2                                                                           0.1                                                               NO          5 → 10*                                            Upper                                                                             1st SiH.sub.4   100   300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2     150                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           AlCl.sub.3 /He                                                                            0.1                                                               SiF.sub.4   0.5                                                               NO          10                                                                C.sub.2 H.sub.2                                                                           0.1                                                           2nd AlCl.sub.3 /He                                                                            0.1   300    20      0.5  5                                   layer                                                                             SiF.sub.4   0.1                                                           region                                                                            SiH.sub.4   300                                                               H.sub.2     300                                                               NO          0.1                                                               C.sub.2 H.sub.2                                                                           0.1                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                       3rd SiF.sub.4   0.5   300    15      0.4  20                                  layer                                                                             AlCl.sub.3 /He                                                                            0.1                                                           region                                                                            SiH.sub.4   100                                                               C.sub.2 H.sub.2                                                               (U · 2nd LR-side: 1 μm)                                                       0.1 → 15*                                                  (U · 4th LR-side: 19 μm)                                                      15                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                           NO          0.1                                                           4th SiH.sub.4   50    300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                           30                                                            region                                                                            NO          0.1                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                           AlCl.sub.3 /He                                                                            0.1                                                               SiF.sub.4   0.5                                                       __________________________________________________________________________

                                      TABLE 108                                   __________________________________________________________________________    Order of                                                                              Gases and           Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                         lamination                                                                            their flow rates    temperature                                                                          power   pressure                                                                           thickness                     (layer name)                                                                          (SCCM)              (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                       __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50      250    1       0.4  0.02                                  H.sub.2     5 → 200*                                                   AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200 → 30**                                                 (UL-side: 0.01 μm)                                                                     30 → 10**                                                  C.sub.2 H.sub.2                                                                           0.1                                                               NO          10                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                       10 → 100 ppm*                                      Upper                                                                             1st SiH.sub.4   100     300    10      0.35 3                             layer                                                                             layer                                                                             H.sub.2     150                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           AlCl.sub.3 /He                                                                            0.1                                                               SiF.sub.4   0.5                                                               NO          10                                                                C.sub.2 H.sub.2                                                                           0.1                                                           2nd AlCl.sub.3 /He                                                                            0.1     300    20      0.5  2                                 layer                                                                             SiF.sub.4   0.1                                                           region                                                                            SiH.sub.4   300                                                               H.sub.2     300                                                               NO          0.1                                                               C.sub.2 H.sub.2                                                                           0.1                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                       3rd SiF.sub.4   0.5     300    15      0.4  20                                layer                                                                             AlCl.sub.3 /He                                                                            0.1                                                           region                                                                            SiH.sub.4   100                                                               C.sub.2 H.sub.2                                                               (U · 2nd LR-side: 5 μm)                                                       0.1 → 13*                                                  (U · 4th LR-side)                                                                13 → 17**                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                           NO          0.1                                                           4th SiH.sub.4   50      300    10      0.4  0.5                               layer                                                                             C.sub.2 H.sub.2                                                                           30                                                            region                                                                            NO          0.1                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                           AlCl.sub.3 /He                                                                            0.1                                                               SiF.sub.4   0.5                                                       __________________________________________________________________________

                                      TABLE 109                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4    50    250    1       0.4  0.02                                   H.sub.2      5 → 200*                                                  AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                       200 → 30**                                                (UL-side: 0.01 μm)                                                                      30 → 10**                                                 C.sub.2 H.sub.2                                                                            0.1                                                              NO           10                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                           (S-side: 0.01 μm)                                                                       10                                                               (UL-side: 0.01 μm)                                                                      10 → 100*                                         Upper                                                                             1st SiH.sub.4    100   300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2      150                                                          region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                        800 ppm                                                          AlCl.sub.3 /He                                                                             0.1                                                              SiF.sub.4    0.5                                                              NO           10                                                               C.sub.2 H.sub.2                                                                            0.1                                                          2nd AlCl.sub.3 /He                                                                             0.1   300    20      0.5  5                                  layer                                                                             SiF.sub.4    0.1                                                          region                                                                            SiH.sub.4    300                                                              H.sub.2      300                                                              NO           0.1                                                              C.sub.2 H.sub.2                                                                            0.1                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                        0.3 ppm                                                      3rd SiF.sub.4    0.5   300    15      0.4  20                                 layer                                                                             AlCl.sub.3 /He                                                                             0.1                                                          region                                                                            C.sub.2 H.sub.2                                                               (U · 2nd LR-side: 19 μm)                                                       15                                                               (U · 4th LR-side: 1 μm)                                                        15 → 30*                                                  SiH.sub.4                                                                     (U · 2nd LR-side: 19 μm)                                                       100                                                              (U · 4th LR-side: 1 μm)                                                        100 → 50**                                                NO           0.1                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                        0.3 ppm                                                      4th SiH.sub.4    50    300    10      0.4  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                            30                                                           region                                                                            NO           0.1                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                        0.3 ppm                                                          AlCl.sub.3 /He                                                                             0.1                                                              SiF.sub.4    0.5                                                      __________________________________________________________________________

                                      TABLE 110                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250    1       0.4  0.02                                      H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    C.sub.2 H.sub.2                                                                         5                                                                   NO        0.1                                                         Upper                                                                             1st SiH.sub.4 100   300    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1   300    20      0.5  5                                     layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         3rd SiF.sub.4 0.5   300    15      0.4  20                                    layer                                                                             AlCl.sub.3 /He                                                                          0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                              NO        0.1                                                             4th SiH.sub.4 50    300    10      0.4  0.5                                   layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 111                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250    1       0.4  0.02                                    H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    C.sub.2 H.sub.2                                                                         1 → 6*                                                       NO        0.1                                                         Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1     300    20      0.5  6                                   layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         3rd SiF.sub.4 0.5     300    15      0.4  20                                  layer                                                                             AlCl.sub.3 /He                                                                          0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     12 → 0.3 ppm**                                               NO        0.1                                                             4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 112                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250    1       0.4  0.02                                      H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    C.sub.2 H.sub.2                                                                         3                                                                   NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                     Upper                                                                             1st SiH.sub.4 100   300    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1   300    20      0.5  5                                     layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         3rd SiF.sub.4 0.5   300    15      0.4  20                                    layer                                                                             AlCl.sub.3 /He                                                                          0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             PH.sub.3 (against SiH.sub.4)                                                            8 ppm                                                               NO        0.1                                                             4th SiH.sub.4 50    300    10      0.4  0.5                                   layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 PH.sub.3 (against SiH.sub.4)                                                            0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 113                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250    1       0.4  0.02                                    H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    C.sub.2 H.sub.2                                                                         3                                                                   NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 → 100 ppm*                                        Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1     300    20      0.5  5                                   layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         3rd SiF.sub.4 0.5     300    15      0.4  20                                  layer                                                                             AlCl.sub.3 /He                                                                          0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             PH.sub.3 (against SiH.sub.4)                                                            10 → 0.3 ppm**                                               NO        0.1                                                             4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 PH.sub.3 (against SiH.sub.4)                                                            0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 114                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250    1       0.4  0.02                                      H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    C.sub.2 H.sub.2                                                                         0.1                                                                 NO        10                                                                  H.sub.2 S 1 ppm                                                       Upper                                                                             1st SiH.sub.4 100   300    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                                 H.sub.2 S 1 ppm                                                           2nd AlCl.sub.3 /He                                                                          0.1   300    20      0.5  5                                     layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             H.sub.2 S 1 ppm                                                           3rd SiF.sub.4 0.5   300    15      0.4  20                                    layer                                                                             AlCl.sub.3 /He                                                                          0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                                 H.sub.2 S 1 ppm                                                           4th SiH.sub.4 50    300    10      0.4  0.5                                   layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 H.sub.2 S 1 ppm                                                       __________________________________________________________________________

                                      TABLE 115                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 NO        5                                                           Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1     300    20      0.5  5                                   layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                        3rd SiF.sub.4 0.5     300    15      0.4  10                                  layer                                                                             AlCl.sub.3 /He                                                                          0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            NO        0.1                                                             4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 116                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 NO        10                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     150  ppm                                                    Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1     300    20      0.5  5                                   layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                        3rd SiF.sub.4 0.5     300    15      0.4  30                                  layer                                                                             AlCl.sub.3 /He                                                                          0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            NO        0.1                                                             4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 117                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         2                                                                   NO        5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     30   ppm                                                    Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1     300    20      0.5  5                                   layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                        3rd SiF.sub.4 0.5     300    15      0.4  20                                  layer                                                                             AlCl.sub.3 /He                                                                          0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            NO        0.1                                                                 NH.sub.3  100                                                             4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 118                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         1→3                                                                         *                                                              NO        3                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100  ppm                                                    Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1     300    20      0.5  10                                  layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub. 2                                                                        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                        3rd SiF.sub.4 0.5     300    15      0.4  20                                  layer                                                                             AlCl.sub.3 /He                                                                          0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            NO        0.1                                                                 N.sub.2   500                                                             4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 119                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         2                                                                   NO        5→8                                                                         *                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10→100                                                                      ppm                                                    Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1     300    15      0.4  20                                  layer                                                                             SiF.sub.4 0.5                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            NO        0.1                                                             3rd AlCl.sub.3 /He                                                                          0.1     300    20      0.5  5                                   layer                                                                             SiF.sub.4 0.5                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                        4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 120                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         2                                                                   NO        5→8                                                                         *                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                           (S-side: 0.01 μm)                                                                    50                                                                  (UL-side: 0.01 μm)                                                                   50→100                                                                      *                                                      Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1     300    15      0.4  20                                  layer                                                                             SiF.sub.4 0.5                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10   ppm                                                            NO        0.1                                                             3rd AlCl.sub.3 /He                                                                          0.1     300    20      0.5  4                                   layer                                                                             SiF.sub.4 0.5                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                        4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 121                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 NO        10                                                          Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1     300    15      0.4  20                                  layer                                                                             SiF.sub.4 0.5                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  PH.sub.3  8    ppm                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            NO        0.1                                                             3rd AlCl.sub.3 /He                                                                          0.1     300    20      0.5  6                                   layer                                                                             SiF.sub.4 0.5                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 PH.sub.3  0.1  ppm                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                        4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 122                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         10                                                                  NO        0.1                                                         Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1     300    15      0.4  20                                  layer                                                                             SiF.sub.4 0.5                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     12→0.3                                                                      ppm                                                                           **                                                             NO        0.1                                                             3rd AlCl.sub.3 /He                                                                          0.1     300    20      0.5  3                                   layer                                                                             SiF.sub.4 0.5                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                        4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 123                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     5      0.4  0.05                                    SiF.sub.4 5                                                                   H.sub.2   10→200                                                                      *                                                              AlCl.sub.3 /He                                                                          120→40                                                                      **                                                             NO        5                                                           Upper                                                                             1st SiH.sub.4 100     250    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            NO        30                                                              2nd SiH.sub.4 300     250    15      0.5  20                                  layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 50      250    10      0.4  0.5                                 layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 124                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     5      0.4  0.05                                    AlCl.sub.3 /He                                                                          120→40                                                                      **                                                     Upper                                                                             1st SiH.sub.4 100     250    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            NO        30                                                              2nd SiH.sub.4 300     250    15      0.5  20                                  layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 50      250    10      0.4  0.5                                 layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 125                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     5      0.4  0.02                                    SiF.sub.4 5                                                                   H.sub.2   10→200                                                                      *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→10                                                                      **                                                             (UL-side: 0.01 μm)                                                                   10                                                          Upper                                                                             1st SiH.sub.4 100     250    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            NO        30                                                              2nd SiH.sub.4 300     250    15      0.5  20                                  layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 50      250    10      0.4  0.5                                 layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 126                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      150    0.5     0.3  0.02                                    H.sub.2   5→200                                                                       *  ↓                                                                             ↓                                             AlCl.sub.3 /He    300    1.5                                                  (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             NO        5                                                                   SiF.sub.4 5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100  ppm                                                    Upper                                                                             1st SiH.sub.4 100     270    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            NO        10                                                              2nd SiH.sub.4 300     250    20      0.5  20                                  layer                                                                             H.sub.2   500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 127                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.3  0.02                                    H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             NO        10                                                                  SiF.sub.4 5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            CH.sub.4  1                                                           Upper                                                                             1st SiH.sub.4 100     250    10      0.35 3                               layer                                                                             layer                                                                             He        100                                                             region                                                                            AlCl.sub.3 /He                                                                          0.3                                                                 SiF.sub.4 0.5                                                                 CH.sub.4  1                                                                   NO                                                                            (LL-side: 2 μm)                                                                      10                                                                  (U · 2nd LR-side:                                                              10→1                                                                        **                                                             1 μm)                                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                        2nd SiH.sub.4 300     250    25      0.6  25                                  layer                                                                             He        600                                                             region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.2                                                                 CH.sub.4  0.5                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                        3rd SiH.sub.4 50      250    10      0.4  1                                   layer                                                                             CH.sub.4  500                                                             region                                                                            NO        0.5                                                                 SiF.sub.4 0.7                                                                 AlCl.sub.3 /He                                                                          0.5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1    ppm                                                    __________________________________________________________________________

                                      TABLE 128                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100                                                                      *  250    10      0.4  0.2                                     H.sub.2   5→200                                                                       *                                                              Al(CH.sub.3).sub.3 /He                                                        (S-side: 0.05 μm)                                                                    200→40                                                                      **                                                             (UL-side: 0.15 μm)                                                                   40→10                                                                       **                                                             NH.sub.3  1→4                                                                         **                                                             SiH.sub.4 1→10                                                                        *                                                      Upper                                                                             1st SiH.sub.4 100     250    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800  ppm                                                            NH.sub.3  4                                                               2nd SiH.sub.4 400     250    10      0.5  15                                  layer                                                                             Ar        200                                                             region                                                                        3rd SiH.sub.4 100     250     5      0.4  0.3                                 layer                                                                             NH.sub.3  30                                                              region                                                                    __________________________________________________________________________

                                      TABLE 129                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100                                                                      *  300    10      0.4  0.2                                     H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40                                                                      **                                                             (UL-side: 0.15 μm)                                                                   40→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         1→5                                                                         *                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100  ppm                                                            SiF.sub.4 1→10                                                                        *                                                      Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                               2nd SiH.sub.4 300     300    20      0.5  20                                  layer                                                                             H.sub.2   500                                                             region                                                                            SiF.sub.4 50                                                              3rd SiH.sub.4 100     300    15      0.4  7                                   layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                        4th SiH.sub.4 40      300    10      0.4  0.1                                 layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 130                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      330     5      0.4  0.05                                    H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                          200→20                                                                      **                                                             NO        5                                                                   PH.sub.3  100  ppm                                                            SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 100     330    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800  ppm                                                            NO        10                                                              2nd SiH.sub.4 400     330    25      0.5  25                                  layer                                                                             SiF.sub.4 10                                                              region                                                                            H.sub.2   800                                                             3rd SiH.sub.4 100     350    15      0.4  5                                   layer                                                                             CH.sub.4  400                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     5000 ppm                                                        4th SiH.sub.4 20      350    10      0.4  1                                   layer                                                                             CH.sub.4  400                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                    __________________________________________________________________________

                                      TABLE 131                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      300     1      0.3  0.02                                    H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100  ppm                                                            N.sub.2   100→150                                                                     *                                                              H.sub.2 S 10   ppm                                                            SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 100     300    10      0.35 5                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     900→600                                                                     ppm                                                                           **                                                             N.sub.2   150                                                             2nd SiH.sub.4 300     300    20      0.5  20                                  layer                                                                             H.sub.2   200                                                             region                                                                        3rd SiH.sub.4 50      300    20      0.4  5                                   layer                                                                             N.sub.2   500                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                        4th SiH.sub.4 40      300    10      0.4  0.3                                 layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 132                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    SiF.sub.4 5                                                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                     Upper                                                                             1st SiH.sub.4 100     250    10      0.4  3                               layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                               2nd SiH.sub.4 300     250    15      0.5  10                                  layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 200     250    15      0.4  20                                  layer                                                                             C.sub.2 H.sub.2                                                                         10→20                                                                       *                                                          region                                                                            NO        1                                                           __________________________________________________________________________

                                      TABLE 133                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             N.sub.2   100                                                                 H.sub.2 S(against SiH.sub.4)                                                            10   ppm                                                            BF.sub.3  10   ppm                                                    Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            BF.sub.3 (against SiH.sub.4)                                                            1000 ppm                                                            N.sub.2   150                                                             2nd SiH.sub.4 300     300    20      0.5  5                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 100     300    15      0.4  20                                  layer                                                                             CH.sub.4  100                                                             region                                                                        4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 134                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300     5      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      NH.sub.3  1→5*                                                         SiF.sub.4 1→10*                                                Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 100    300     5      0.2  8                                    layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.3  50                                                              region                                                                        4th SiH.sub.4 100    300    10      0.4  0.3                                  layer                                                                             NH.sub.4  50                                                              region                                                                    __________________________________________________________________________

                                      TABLE 135                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250     5      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      NO        5→10*                                                        PF.sub.5 (against SiH.sub.4)                                                            10→100 ppm*                                          Upper                                                                             1st SiH.sub.4 100    280    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PF.sub.5 (against SiH.sub.4)                                                            1000 ppm                                                            NO        10                                                              2nd SiH.sub.4 100    300     3      0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                             3rd SiH.sub. 4                                                                              100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                          4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 136                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     5      0.4  0.05                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                            200→20**                                                   NO          10                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                           Si.sub.2 F.sub.6                                                                          5                                                         Upper                                                                             1st SiH.sub.4   100    300    10       0.35                                                                              3                              layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                 2nd Si.sub.2 H.sub.6                                                                          200    300    10      0.5  10                                 layer                                                                             H.sub.2     200                                                           region                                                                        3rd SiH.sub. 4  300    330    20      0.4  30                                 layer                                                                             C.sub.2 H.sub.2                                                                           50                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                       4th SiH.sub.4   200    330    10      0.4  1                                  layer                                                                             C.sub.2 H.sub.2                                                                           200                                                           region                                                                    __________________________________________________________________________

                                      TABLE 137                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    5       0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      NH.sub.3  1→5*                                                         B.sub.2 H.sub.6 (against SiH.sub.4)                                                     150 ppm                                                             Si.sub.2 F.sub.6                                                                        1→8*                                                 Upper                                                                             1st SiH.sub.4 100    270    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 100    300    5       0.2  8                                    layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.3  30→50*                                                   region                                                                            PF.sub.5 (against SiH.sub.4)                                                            50 ppm                                                          4th SiH.sub.4 100    300    5       0.4  0.7                                  layer                                                                             NH.sub.3  80→100*                                                  region                                                                            PF.sub.5 (against SiH.sub.4)                                                            500 ppm                                                     __________________________________________________________________________

                                      TABLE 138                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     1      0.4  0.02                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30**                                                   (UL-side: 0.01 μm)                                                                     30→10**                                                    NO          5                                                                 SiF.sub.5   5                                                         Upper                                                                             1st SiH.sub.4   100    250    10       0.35                                                                              3                              layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                 2nd SiH.sub.4   300    300    20      0.5  20                                 layer                                                                             H.sub.2     500                                                           region                                                                        3rd SiH.sub.4   100    300     5      0.4  1                                  layer                                                                             GeH.sub.4   10→50*                                                 region                                                                            H.sub.2     300                                                           4th SiH.sub.4   100→40**                                                                      300    10      0.4  1                                  layer                                                                             CH.sub.4    100→600*                                               region                                                                    __________________________________________________________________________

                                      TABLE 139                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     300     1      0.3  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      NO        9                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     80 ppm                                                              SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 85     330     9       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   95                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        9                                                               2nd SiH.sub.4 300    300    15      0.5  20                                   layer                                                                             H.sub.2   400                                                             region                                                                        3rd SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 140                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     300      0.7   0.3  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      NO        8                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     80 ppm                                                              SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 75     300    8        0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   80                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        8                                                               2nd SiH.sub.4 200    300    12      0.4  20                                   layer                                                                             H.sub.2   400                                                             region                                                                        3rd SiH.sub.4 40     300    7       0.3  0.5                                  layer                                                                             CH.sub.2  400                                                             region                                                                    __________________________________________________________________________

                                      TABLE 141                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 25     300      0.5   0.2  0.02                                     H.sub.2   5→100*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→15**                                                     (UL-side: 0.01 μm)                                                                   15→5**                                                       NO        7                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     80 ppm                                                              SiF.sub.4 4                                                           Upper                                                                             1st SiH.sub.4 55     300    7        0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   70                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        7                                                               2nd SiH.sub.4 150    300    10      0.4  20                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 30     300    5       0.3  0.5                                  layer                                                                             CH.sub.4  300                                                             region                                                                    __________________________________________________________________________

                                      TABLE 142                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 20     300      0.3   0.2  0.02                                     H.sub.2   5→100*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    80→15**                                                      (UL-side: 0.01 μm)                                                                   15→5**                                                       NO        5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     80 ppm                                                              SiF.sub.4 4                                                           Upper                                                                             1st SiH.sub.4 45     300    6        0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   60                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        5                                                               2nd SiH.sub.4 100    300    6       0.3  20                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 20     300    3       0.2  0.5                                  layer                                                                             CH.sub.4  200                                                             region                                                                    __________________________________________________________________________

                                      TABLE 143                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     500     5      0.4     0.05                                  H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                                     C.sub.2 H.sub.2                                                                         5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     60 ppm                                                              SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 180    500    22       0.4  4                               layer                                                                             layer                                                                             H.sub.2   1200                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     700 ppm                                                             C.sub.2 H.sub.2                                                                         8                                                               2nd SiH.sub.4 300    500    30      0.5  10                                   layer                                                                             H.sub.2   1500                                                            region                                                                        3rd SiH.sub.4 200    500    30      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         10→20*                                                   region                                                                            NO        1                                                           __________________________________________________________________________

                                      TABLE 144                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            μW discharging                                                                      Inner                                                                              Layer                           lamination                                                                            their flow rates temperature                                                                          power    pressure                                                                           thickness                       (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                          (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 150    250    0.5      0.6  0.02                                    H.sub.2   20→500*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    400→80**                                                     (UL-side: 0.01 μm)                                                                   80→50**                                                      NO        10                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     60 ppm                                                              SiF.sub.4 10                                                          Upper                                                                             1st SiH.sub.4 350    250    0.5       0.5 3                               layer                                                                             layer                                                                             H.sub.2   350                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     600 ppm                                                             NO        13                                                                  SiF.sub.4 20                                                              2nd SiH.sub.4 700    250    0.5      0.5  20                                  layer                                                                             SiF.sub.4 30                                                              region                                                                            H.sub.2   500                                                             3rd SiH.sub.4 150    250    0.5      0.3  1                                   layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 145                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     5      0.4  0.05                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                                     C.sub.2 H.sub.2                                                                         5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 100    250    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against iH.sub.4)                                                      1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                                   SiF.sub.4 5                                                               2nd SiH.sub.4 200    250    15      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         10→200*                                                  region                                                                            NO        1                                                                   SiF.sub.4 5                                                               3rd SiH.sub.4 300    250    15      0.5  10                                   layer                                                                             H.sub.2   300                                                             region                                                                            SiF.sub.4 5                                                           __________________________________________________________________________

                                      TABLE 146                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      N.sub.2   100                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                              SiF.sub.4 1→10*                                                Upper                                                                             1st SiH.sub.4 100     300    10       0.35                                                                              3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     900→600 ppm**                                                N.sub.2   150                                                             2nd SiH.sub.4 100     300    15      0.4  20                                  layer                                                                             CH.sub.2  100                                                             region                                                                        3rd SiH.sub.4 300     300    20      0.5  5                                   layer                                                                             H.sub.2   300                                                             region                                                                        4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 147                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300     5      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      NH.sub.3  1→5*                                                         SiF.sub.4 10                                                          Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PF.sub.5 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.2  50                                                              region                                                                        3rd SiH.sub.4 100    300     5      0.2  8                                    layer                                                                             H.sub.2   300                                                             region                                                                            Si.sub.2 F.sub.6                                                                        5                                                               4th SiH.sub.4 100    300    10      0.4  0.3                                  layer                                                                             NH.sub.3  50                                                              region                                                                    __________________________________________________________________________

                                      TABLE 148                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250     5      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      NO        5→10*                                                        PF.sub.5 (against SiH.sub.4)                                                            10→100 ppm*                                          Upper                                                                             1st SiH.sub.4 100    250    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PF.sub.5 (against SiH.sub.4)                                                            1000 ppm                                                            NO        10                                                              2nd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            PF.sub.5 (against SiH.sub.4)                                                            50 ppm                                                          3rd SiH.sub.4 100    300     3      0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 149                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     5      0.4  0.05                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                            200→20**                                                   NO          10                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                           SiF.sub.4   5                                                         Upper                                                                             1st SiH.sub.4   100    300    10       0.35                                                                              3                              layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                 2nd SiH.sub.4   300    330    20      0.4  30                                 layer                                                                             C.sub.2 H.sub.2                                                                           50                                                            region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                      100 ppm                                                       3rd Si.sub.2 H.sub.6                                                                          200    300    10      0.5  10                                 layer                                                                             H.sub.2     200                                                           region                                                                        4th SiH.sub.4   200    330    10      0.4  1                                  layer                                                                             C.sub.2 H.sub.2                                                                           200                                                           region                                                                    __________________________________________________________________________

                                      TABLE 150                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    5       0.4  0.2                                      SiF.sub.4 1→10*                                                        NH.sub.3  1→5*                                                         H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                              Upper                                                                             1st SiH.sub.4 100    300    10      0.4  3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PF.sub.5 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.3  30→50*                                                   region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                          3rd SiH.sub.4 100    300    5       0.4  8                                    layer                                                                             H.sub.2   300                                                             region                                                                        4th SiH.sub.4 100    300    5       0.4  0.7                                  layer                                                                             NH.sub.3  80→100*                                                  region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     500 ppm                                                     __________________________________________________________________________

                                      TABLE 151                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     1      0.3  0.02                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30**                                                   (UL-side: 0.01 μm)                                                                     30→10**                                                    NO          10                                                                SiF.sub.4   5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                   Upper                                                                             1st SiH.sub.4   100    250    10       0.35                                                                              3                              layer                                                                             layer                                                                             He          100                                                           region                                                                            NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                     B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                       2nd SiH.sub.4   300    250    25      0.6  25                                 layer                                                                             He          600                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                       3rd SiH.sub.4   50     250    10      0.4  1                                  layer                                                                             CH.sub.4    500                                                           region                                                                    __________________________________________________________________________

                                      TABLE 152                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    10      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      C.sub.2 H.sub.2                                                                         1→5*                                                         B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                    1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                                   AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                             2nd SiH.sub.4 300    300    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                         3rd SiH.sub.4 100    300    15      0.4  7                                    layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                         4th SiH.sub.4 40     300    10      0.4  0.1                                  layer                                                                             CH.sub.4  600                                                             region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6                                                                         0.3                                                                 PH.sub.3  0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 153                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250     5      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      NO        5→10*                                                        PH.sub.3 (against SiH.sub.4)                                                            10→100 ppm*                                                  SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 100    280    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NO        10                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 CH.sub.4  1                                                               2nd SiH.sub.4 100    300     3      0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                                 PH.sub.3  0.3 ppm                                                             NO        0.1                                                                 CH.sub.4  1                                                                   AlCl.sub.3 /He                                                                          0.1                                                             3rd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                              AlCl.sub.3 /He                                                                          0.1                                                                 NO        500                                                                 SiF.sub.4 0.5                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 PH.sub.3  0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 154                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     5      0.4  0.03                                     H.sub.2   10→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→10**                                                     (UL-side: 0.01 μm)                                                                   10                                                                  C.sub.2 H.sub.2                                                                         3→13*                                                        B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             SiF.sub.4 10                                                          Upper                                                                             1st SiH.sub.4   100  250    10      0.5  2                                layer                                                                             layer                                                                             B.sub.2 H.sub.6                                                           region                                                                            (against SiH.sub.4)                                                                       1500 ppm                                                          C.sub.2 H.sub.2                                                                           13                                                                H.sub.2     300                                                               NO          1                                                             2nd SiH.sub.4   100  250    25      0.5  22                                   layer                                                                             H.sub.2     300                                                           region                                                                            C.sub.2 H.sub.2                                                                           15                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                       40 ppm                                                        3rd SiH.sub.4   100  250    20      0.5  5                                    layer                                                                             C.sub.2 H.sub.2                                                                           10                                                            region                                                                            H.sub.2     150                                                           4th SiH.sub.4   60   250    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                           60                                                            region                                                                            H.sub.2     50                                                        __________________________________________________________________________

                                      TABLE 155                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     5      0.4  0.03                                     H.sub.2   10→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→10**                                                     (UL-side: 0.01 μm)                                                                   10                                                                  C.sub.2 H.sub.2                                                                         3→13*                                                        PH.sub.3 (against SiH.sub.4)                                                            10→100 ppm*                                                  SiF.sub.4 10                                                          Upper                                                                             1st SiH.sub.4 100    250    10      0.5  2                                layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                         13                                                              region                                                                            PH.sub.3 (against SiH.sub.4)                                                            1500 ppm                                                            H.sub.2   300                                                                 NO        1                                                               2nd SiH.sub.4 100    250    25      0.5  22                                   layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            H.sub.2   300                                                             3rd SiH.sub.4 100    250    20      0.5  5                                    layer                                                                             C.sub.2 H.sub.2                                                                         10                                                              region                                                                            H.sub.2   150                                                             4th SiH.sub.4 60     250    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         60                                                              region                                                                            H.sub.2   50                                                          __________________________________________________________________________

                                      TABLE 156                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    10      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-Side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      C.sub.2 H.sub.2                                                                         1→5*                                                         B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                     100 ppm                                                             SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                                   AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 H.sub.2 S 1 ppm                                                               SiF.sub. 4                                                                              0.5                                                             2nd SiH.sub.4 300    300    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                             SiF.sub.4 0.5                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 H.sub.2 S 1 ppm                                                           3rd SiH.sub.4 100    300    15      0.4  7                                    layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3                                                                      (against SiH.sub.4)                                                                     3000 ppm                                                            NO        0.1                                                                 SiF.sub.4 0.5                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                             H.sub.2 S 1 ppm                                                           4th SiH.sub.4 40     300    10      0.4  0.1                                  layer                                                                             CH.sub.4  600                                                             region                                                                            NO        0.1                                                                 PH.sub.3  0.3 ppm                                                             B.sub.2 H.sub.6                                                                         0.3 ppm                                                             SiF.sub.4 0.5                                                                 AlCl.sub.3 /He                                                                          0.1                                                         __________________________________________________________________________

                                      TABLE 157                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-Side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         0.1                                                                 NO        5                                                                   SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                             2nd SiF.sub.4 0.1    300    20      0.5  5                                    layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         3rd SiF.sub.4 0.5    300    15      0.4  20                                   layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 158                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-Side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                                 SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd SiH.sub.4 300    300    20      0.5  7                                    layer                                                                             SiF.sub.4 0.1                                                             region                                                                            H.sub.2   300                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 NO        2                                                                   AlCl.sub.3 /He                                                                          0.1                                                             3rd SiH.sub.4 100    300    15      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 159                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-Side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         0.1                                                                 NO        5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             SiF.sub.4 1→10*                                                Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                         region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 H.sub.2   150                                                                 NO        10                                                              2nd AlCl.sub.3 /He                                                                          0.1    300    20      0.5  3                                    layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.5→2*                                                       B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         3rd SiF.sub.4 0.5    300    15      0.4  20                                   layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 160                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-Side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         0.1                                                                 NO        10                                                                  BF.sub.3 (against SiH.sub.4)                                                            10 ppm                                                              SiF.sub.4 1→10*                                                Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                         0.1                                                             region                                                                            BF.sub.3 (against SiH.sub.4)                                                            1000 ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 H.sub.2   150                                                                 NO        10                                                              2nd SiH.sub.4 300    300    20      0.5  8                                    layer                                                                             C.sub.2 H.sub.2                                                                         1                                                               region                                                                            BF.sub.3 (against SiH.sub.4)                                                            0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.1                                                                 H.sub.2   300                                                                 NO        0.1                                                             3rd SiH.sub.4 100    300    15      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            BF.sub.3 (against SiH.sub.4)                                                            0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            BF.sub.3 (against SiH.sub.4)                                                            0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                         __________________________________________________________________________

                                      TABLE 161                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/Cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     1      0.4  0.02                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30**                                                   (UL-side: 0.01 μm)                                                                     30→10**                                                    C.sub.2 H.sub.2                                                                           0.1                                                               NO          5→10*                                                      SiF.sub.4   5                                                         Upper                                                                             1st SiH.sub.4   100    300    10       0.35                                                                              3                              layer                                                                             layer                                                                             H.sub.2     150                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           C.sub.2 H.sub.2                                                                           5                                                                 ALCL.sub.3 /He                                                                            0.1                                                               NO          10                                                                SiF.sub.4   0.5                                                           2nd SiH.sub.4   300    300    20      0.5  5                                  layer                                                                             H.sub.2     300                                                           region                                                                            C.sub.2 H.sub.2                                                                           0.1                                                               NO          0.1                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                           SiF.sub.4   0.1                                                               AlCl.sub.3 /He                                                                            0.1                                                           3rd SiH.sub.4   100    300    15      0.4  20                                 layer                                                                             NO          0.1                                                           region                                                                            SiF.sub.4   0.5                                                               C.sub.2 H.sub.2                                                               (U · 2nd LR-side: 1 μm)                                                       0.1→15*                                                    (U · 4th LR-side: 19 μm)                                                      15                                                                AlCl.sub.3 /He                                                                            0.1                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                       4th SiH.sub.4   50     300    10      0.4  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                           30                                                            region                                                                            NO          0.1                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                           SiF.sub.4   0.5                                                               AlCl.sub.3 /He                                                                            0.1                                                       __________________________________________________________________________

                                      TABLE 162                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/Cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     1      0.4  0.02                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30**                                                   (UL-side: 0.01 μm)                                                                     30→10**                                                    C.sub.2 H.sub.2                                                                           0.1                                                               NO          10                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                       10→100 ppm*                                                SiF.sub.4   5                                                         Upper                                                                             1st SiH.sub.4   100    300    10       0.35                                                                              3                              layer                                                                             layer                                                                             H.sub.2     150                                                           region                                                                            B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                       800 ppm                                                           C.sub.2 H.sub.2                                                                           0.1                                                               AlCl.sub.3 /He                                                                            0.1                                                               NO          10                                                                SiF.sub.4   0.5                                                           2nd SiF.sub.4   0.1    300    20      0.5  2                                  layer                                                                             SiH.sub.4   300                                                           region                                                                            H.sub.2     300                                                               C.sub.2 H.sub.2                                                                           0.1                                                               AlCl.sub.3 /He                                                                            0.1                                                               NO          0.1                                                               B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                       0.3 ppm                                                       3rd SiF.sub.4   0.5    300    15      0.4  20                                 layer                                                                             SiH.sub.4   100                                                           region                                                                            C.sub.2 H.sub.2                                                               (U · 2nd LR-side:1 μm)                                                        0.1→13*                                                    (U · 4th LR-side: 19 μm)                                                      1→17*                                                      AlCl.sub.3 /He                                                                            0.1                                                               NO          0.1                                                               B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                       0.3 ppm                                                       4th SiH.sub.4   50     300    10      0.4  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                           30                                                            region                                                                            AlCl.sub.3 /He                                                                            0.1                                                               SiF.sub.4   0.5                                                               NO          0.1                                                               B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                       0.3 ppm                                                   __________________________________________________________________________

                                      TABLE 163                                   __________________________________________________________________________    Order of                                                                              Gases and           Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                         lamination                                                                            their flow rates    temperature                                                                          power   pressure                                                                           thickness                     (layer name)                                                                          (SCCM)              (°C.)                                                                         (mW/Cm.sup.3)                                                                         (Torr)                                                                             (μm)                       __________________________________________________________________________    Lower layer                                                                           SiH.sub.4    50     250     1      0.4  0.02                                  H.sub.2      5→200*                                                    AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                       200→30**                                                  (UL-side: 0.01 μm)                                                                      30→10**                                                   NO           10                                                               C.sub.2 H.sub.2                                                                            0.1                                                              SiF.sub.4    5                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                           (S-side: 0.01 μm)                                                                       10                                                               (UL-side: 0.01 μm)                                                                      10→100**                                          Upper                                                                             1st SiH.sub.4    100    300    10       0.35                                                                              3                             layer                                                                             layer                                                                             H.sub.2      150                                                          region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                        800 ppm                                                          AlCl.sub.3 /He                                                                             0.1                                                              SiF.sub.4    0.5                                                              NO           10                                                               C.sub.2 H.sub.2                                                                            0.1                                                          2nd SiH.sub.4    300    300    20      0.5  5                                 layer                                                                             SiF.sub.4    0.1                                                          region                                                                            H.sub.2      300                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                        0.3 ppm                                                          C.sub.2 H.sub.2                                                                            0.1                                                              NO           0.1                                                              AlCl.sub.3 /He                                                                             0.1                                                          3rd NO           0.1    300    15      0.4  20                                layer                                                                             SiF.sub.4    0.5                                                          region                                                                            C.sub.2 H.sub.2                                                               (U · 2nd LR-side: 19 μm)                                                       15                                                               (U · 4th LR-side: 1 μm)                                                        15→30*                                                    SiH.sub.4                                                                     (U · 2nd LR-side: 19 μm)                                                       100                                                              (U · 4th LR-side: 1 μm)                                                        100→50**                                                  AlCl.sub.3 /He                                                                             0.1                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                        0.3 ppm                                                      4th SiH.sub.4    50     300    10      0.4  0.5                               layer                                                                             C.sub.2 H.sub.2                                                                            30                                                           region                                                                            AlCl.sub.3 /He                                                                             0.1                                                              SiF.sub.4    0.5                                                              NO           0.1                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                        0.3 ppm                                                  __________________________________________________________________________

                                      TABLE 164                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         5                                                                   NO        0.1                                                                 SiF.sub.4 (S-side: 0.01 μm)                                                          2                                                                   (UL-side: 0.01 μm)                                                                   2→5*                                                 Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                         region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 H.sub.2   150                                                                 NO        10                                                              2nd AlCl.sub.2 /He                                                                          0.1    300    20      0.5  5                                    layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         3rd SiF.sub.4 0.5    300    15      0.4  20                                   layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                              NO        0.1                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 165                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         1→6*                                                         NO        0.1                                                                 SiF.sub.4 10                                                          Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                         0.1                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 H.sub.2   150                                                                 NO        10                                                              2nd SiH.sub.4 300    300    20      0.5  6                                    layer                                                                             C.sub.2 H.sub.2                                                                         0.1                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.1                                                                 H.sub.2   300                                                                 NO        0.1                                                             3rd SiH.sub.4 100    300    15      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                         __________________________________________________________________________

                                      TABLE 166                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         3                                                                   NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             Si.sub.2 F.sub.6                                                                        3                                                           Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  Si.sub.2 F.sub.6                                                                        0.5                                                             2nd SiH.sub.4 300    300    20      0.5  5                                    layer                                                                             H.sub.2   300                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Si.sub.2 F.sub.6                                                                        0.5                                                                 AlCl.sub.3 /He                                                                          0.1                                                             3rd Si.sub.2 F.sub.6                                                                        0.5    300    15      0.4  20                                   layer                                                                             NO        0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  PH.sub.3 (against SiH.sub.4)                                                            8 ppm                                                               AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Si.sub.2 F.sub.6                                                                        0.5                                                                 PH.sub.3 (against SiH.sub.4)                                                            0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                         __________________________________________________________________________

                                      TABLE 167                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         3                                                                   NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10→100 ppm*                                                  SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 100     300    10       0.35                                                                              3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                     800 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                             2nd SiF.sub.4 0.1     300    20      0.5  5                                   layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                     0.3 ppm                                                         3rd SiF.sub.4 0.5     300    15      0.4  20                                  layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  PH.sub.3 (against SiH.sub.4)                                                            10→0.3 ppm**                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                     0.3 ppm                                                         4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                     0.3 ppm                                                             PH.sub.3                                                                      (against SiH.sub.4)                                                                     0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 168                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                         NO        10                                                                            30→10**                                                      C.sub.2 H.sub.2                                                                         0.1                                                                 SiF.sub.4 1→10*                                                        H.sub.2 S 1 ppm                                                       Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                                 H.sub.2 S 1 ppm                                                           2nd SiH.sub.4 300    300    20      0.5  5                                    layer                                                                             SiF.sub.4 0.1                                                             region                                                                            H.sub.2   300                                                                 B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                     0.3 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 NO        0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 H.sub.2 S 1 ppm                                                           3rd NO        0.1    300    15      0.4  20                                   layer                                                                             SiF.sub.4 0.5                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  SiH.sub.4 100                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                     0.3 ppm                                                             H.sub.2 S 1 ppm                                                           4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                     0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 169                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         0.1                                                                 NO        5                                                                   SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                         region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 H.sub.2   150                                                                 NO        10                                                              2nd AlCl.sub.3 /He                                                                          0.1    300    20      0.5  5                                    layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         3rd SiF.sub.4 0.5    300    15      0.4  10                                   layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 170                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         0.1                                                                 NO        10                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     150 ppm                                                             SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                         0.1                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 H.sub.2   150                                                                 NO        10                                                              2nd SiH.sub.4 300    300    20      0.5  5                                    layer                                                                             C.sub.2 H.sub.2                                                                         0.1                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.1                                                                 H.sub.2   300                                                                 NO        0.1                                                             3rd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                         __________________________________________________________________________

                                      TABLE 171                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         2                                                                   NO        5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     30 ppm                                                              SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                             2nd SiH.sub.4 300    300    20      0.5  5                                    layer                                                                             H.sub.2   300                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             SiF.sub.4 0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                             3rd SiF.sub.4 0.5    300    15      0.4  20                                   layer                                                                             NO        0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 NH.sub.3  100                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             SiF.sub.4 0.5                                                                 AlCl.sub.3 /He                                                                          0.1                                                         __________________________________________________________________________

                                      TABLE 172                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         1→3*                                                         NO        3                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             SiF.sub.4 10                                                          Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd SiF.sub.4 0.1    300    20      0.5  2                                    layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         3rd SiF.sub.4 0.5    300    15      0.4  20                                   layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             N.sub.2   500                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 173                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         2                                                                   NO        5→8*                                                         B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10→100 ppm*                                                  SiF.sub.4 20                                                          Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1    300    15      0.4  20                                   layer                                                                             SiF.sub.4 5                                                               region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                             3rd AlCl.sub.3 /He                                                                          0.1    300    20      0.5  5                                    layer                                                                             SiF.sub.4 0.5                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 174                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         2                                                                   NO        5→8*                                                         B.sub.2 H.sub.6 (against SiH.sub.4)                                           (S-side: 0.01 μm)                                                                    50 ppm                                                              (UL-side: 0.01 μm)                                                                   50→100 ppm*                                                  SiF.sub.4 3                                                           Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                             2nd SiF.sub.4 0.5    300    15      0.4  20                                   layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                          3rd SiF.sub.4 0.5    300    20      0.5  4                                    layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                     0.3 ppm                                                         4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 175                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                                 SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     150 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd SiH.sub.4 100    300    15      0.4  20                                   layer                                                                             SiF.sub.4 0.5                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             C.sub.2 H.sub.2                                                                         15                                                                  PH.sub.3 (against SiH.sub.4)                                                            8 ppm                                                               NO        0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                             3rd NO        0.1    300    20      0.5  6                                    layer                                                                             SiF.sub.4 0.5                                                             region                                                                            H.sub.2   300                                                                 NO        0.1                                                                 PH.sub.3 (against SiH.sub.4)                                                            0.1 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                     __________________________________________________________________________

                                      TABLE 176                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         10                                                                  NO        0.1                                                                 SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 100     300    10       0.35                                                                              3                               layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                         region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 H.sub.2   150                                                                 NO        10                                                              2nd AlCl.sub.3 /He                                                                          0.1     300    15      0.4  20                                  layer                                                                             SiF.sub.4 0.5                                                             region                                                                            SiH.sub.4 100                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     12→0.3 ppm**                                             3rd SiF.sub.4 0.5     300    20      0.5  3                                   layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                             4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 177                                   __________________________________________________________________________    Order of                                                                              Gases and   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                                 lamination                                                                            their flow rates                                                                          temperature                                                                          power   pressure                                                                           thickness                             (layer name)                                                                          (SCCM)      (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                               __________________________________________________________________________    Lower layer                                                                           SiH.sub.4                                                                           50    250     5      0.4  0.05                                          GeH.sub.4                                                                           15                                                                      H.sub.2                                                                             10→200*                                                          AlCl.sub.3 /He                                                                      120→40**                                                 Upper                                                                             1st SiH.sub.4                                                                           100   250    10       0.35                                                                              3                                     layer                                                                             layer                                                                             H.sub.2                                                                             100                                                                 region                                                                            NO    30                                                                  2nd SiH.sub.4                                                                           300   250    15      0.5  20                                        layer                                                                             H.sub.2                                                                             300                                                                 region                                                                        3rd SiH.sub.4                                                                           50    250    10      0.4  0.5                                       layer                                                                             CH.sub.4                                                                            500                                                                 region                                                                    __________________________________________________________________________

                                      TABLE 178                                   __________________________________________________________________________    Order of                                                                              Gases and   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                                 lamination                                                                            their flow rates                                                                          temperature                                                                          power   pressure                                                                           thickness                             (layer name)                                                                          (SCCM)      (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                               __________________________________________________________________________    Lower layer                                                                           SiH.sub.4                                                                           50    250     5      0.4  0.05                                          AlCl.sub.3 /He                                                                      120→40**                                                 Upper                                                                             1st SiH.sub.4                                                                           100   250    10       0.35                                                                              3                                     layer                                                                             layer                                                                             H.sub.2                                                                             100                                                                 region                                                                            NO    30                                                                  2nd SiH.sub.4                                                                           300   250    15      0.5  20                                        layer                                                                             H.sub.2                                                                             300                                                                 region                                                                        3rd SiH.sub.4                                                                           50    250    10      0.4  0.5                                       layer                                                                             CH.sub.4                                                                            500                                                                 region                                                                    __________________________________________________________________________

                                      TABLE 179                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     5      0.4  0.02                                     GeH.sub.4 15                                                                  H.sub.2   10→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→10**                                                     (UL-side: 0.01 μm)                                                                   10                                                          Upper                                                                             1st SiH.sub.4 300    250    10      0.4  3                                layer                                                                             layer                                                                             H.sub.2   300                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        30                                                              2nd SiH.sub.4 300    250    15      0.5  20                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 50     250    10      0.4  0.5                                  layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 180                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     150    0.5     0.3  0.02                                     H.sub.2   5→200*                                                                        ↓                                                                             ↓                                              AlCl.sub.3 /He   300    1.5                                                   (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      NO        5                                                                   GeH.sub.4 15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                     Upper                                                                             1st SiH.sub.4 100    270    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        10                                                              2nd SiH.sub.4 300    250    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 181                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     1      0.3  0.02                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30**                                                   (UL-side: 0.01 μm)                                                                     30→10**                                                    NO          10                                                                GeH.sub.4   15                                                        Upper                                                                             1st SiH.sub.4   100    250    10       0.35                                                                              3                              layer                                                                             layer                                                                             He          100                                                           region                                                                            AlCl.sub.3 /He                                                                            0.4                                                               SiF.sub.4   0.5                                                               CH.sub.4    1                                                                 NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                     B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                       2nd SiH.sub.4   300    250    25      0.6  25                                 layer                                                                             He          600                                                           region                                                                            AlCl.sub.3 /He                                                                            0.4                                                               SiF.sub.4   0.5                                                               CH.sub.4    1                                                                 NO          0.1                                                               B.sub.2 H.sub.6                                                                           0.3 ppm                                                           GeH.sub.4   0.5                                                           3rd SiH.sub.4   50     250    10      0.4  1                                  layer                                                                             CH.sub.4    500                                                           region                                                                            NO          0.1                                                               SiF.sub.4   0.5                                                               AlCl.sub.3 /He                                                                            0.5                                                               B.sub.2 H.sub.6                                                                           0.3 ppm                                                           N.sub.2     1                                                                 GeH.sub.4   0.5                                                       __________________________________________________________________________

                                      TABLE 182                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    10      0.4  0.2                                      H.sub.2   5→200*                                                       Al(CH.sub.3).sub.3 /He                                                        (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      NH.sub.3  1→4*                                                         GeH.sub.4 1→10*                                                Upper                                                                             1st SiH.sub.4 100    250    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  4                                                               2nd SiH.sub.4 400    250    10      0.5  15                                   layer                                                                             Ar        200                                                             region                                                                        3rd SiH.sub.4 100    250     5      0.4  0.3                                  layer                                                                             NH.sub.3  30                                                              region                                                                    __________________________________________________________________________

                                      TABLE 183                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    10      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      C.sub.2 H.sub.2                                                                         1→5*                                                         B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             GeH.sub.4 1→10*                                                Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                               2nd SiH.sub.4 300    300    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                            SiF.sub.4 50                                                              3rd SiH.sub.4 100    300    15      0.4  7                                    layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                        4th SiH.sub.4 40     300    10      0.4  0.1                                  layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 184                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     330     5      0.4  0.05                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                                     NO        5                                                                   PH.sub.3 (against SiH.sub.4)                                                            100 ppm                                                             GeH.sub.4 5                                                           Upper                                                                             1st SiH.sub.4 100    330    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NO        10                                                              2nd SiH.sub.4 400    330    25      0.5  25                                   layer                                                                             SiF.sub.4 10                                                              region                                                                            H.sub.2   800                                                             3rd SiH.sub.4 100    350    15      0.4  5                                    layer                                                                             CH.sub.4  400                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     5000 ppm                                                        4th SiH.sub.4 20     350    10      0.4  1                                    layer                                                                             CH.sub.4  400                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     8000 ppm                                                    __________________________________________________________________________

                                      TABLE 185                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      300     1      0.3  0.02                                    H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             N.sub.2   100→150*                                                     H.sub.2 S 10 ppm                                                              GeH.sub.4 15                                                          Upper                                                                             1st SiH.sub.4 100     300    10       0.35                                                                              5                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     900→600 ppm**                                                N.sub.2   150                                                             2nd SiH.sub.4 300     300    20      0.5  20                                  layer                                                                             H.sub. 2  200                                                             region                                                                        3rd SiH.sub.4 50      300    20      0.4  5                                   layer                                                                             N.sub.2   500                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                        4th SiH.sub.4 40      300    10      0.4  0.3                                 layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 186                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     GeH.sub.4 15                                                                  H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                              Upper                                                                             1st SiH.sub.4 100    250    10      0.4  3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                               2nd SiH.sub.4 300    250    15      0.5  10                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 200    250    15      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         10→20*                                                   region                                                                            NO        1                                                           __________________________________________________________________________

                                      TABLE 187                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      N.sub.2   100                                                                 H.sub.2 S (against SiH.sub.4)                                                           10 ppm                                                              BF.sub.3  10 ppm                                                              GeH.sub.4 20                                                          Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            BF.sub.3 (against SiH.sub.4)                                                            1000 ppm                                                            N.sub.2   150                                                             2nd SiH.sub.4 300    300    20      0.5  5                                    layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 100    300    15      0.4  20                                   layer                                                                             CH.sub.4  100                                                             region                                                                        4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 188                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300     5      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      NH.sub.3  1→5*                                                         GeH.sub.4 1→10*                                                Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 100    300     5      0.2  8                                    layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.3  50                                                              region                                                                            B.sub. 2 H.sub.6                                                          4th SiH.sub.4 100    300    10      0.4  0.3                                  layer                                                                             NH.sub.4  50                                                              region                                                                    __________________________________________________________________________

                                      TABLE 189                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250     5      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      NO        5→10*                                                        GeF.sub.4 5→10*                                                        PF.sub.5 (against SiH.sub.4)                                                            10→100 ppm*                                          Upper                                                                             1st SiH.sub.4 100    280    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PF.sub.5 (against SiH.sub.4)                                                            1000 ppm                                                            NO        10                                                              2nd SiH.sub.4 100    300     3      0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                             3rd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             CH.sub.4 (                                                                              100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     50 ppm                                                          4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 190                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     5      0.4  0.05                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                            200→20**                                                   NO          10                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                           Si.sub.2 F.sub.6                                                                          5                                                                 GeH.sub.4   20                                                        Upper                                                                             1st SiH.sub.4   100    300    10       0.35                                                                              3                              layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                 2nd Si.sub.2 H.sub.6                                                                          200    300    10      0.5  10                                 layer                                                                             H.sub.2     200                                                           region                                                                        3rd SiH.sub.4   300    330    20      0.4  30                                 layer                                                                             C.sub.2 H.sub.2                                                                           50                                                            region                                                                            PH.sub.3 (against SiH.sub.4)                                                              100 ppm                                                       4th SiH.sub.4   200    330    10      0.4  1                                  layer                                                                             C.sub.2 H.sub.2                                                                           200                                                           region                                                                    __________________________________________________________________________

                                      TABLE 191                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    5       0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      NH.sub.3  1→5*                                                         B.sub.2 H.sub.6 (against SiH.sub.4)                                                     150 ppm                                                             Si.sub.2 F.sub.6                                                                        1→8*                                                         GeH.sub.4 5→20*                                                Upper                                                                             1st SiH.sub.4 100    270    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 100    300    5       0.2  8                                    layer                                                                             H.sub.2   300                                                             region                                                                            Si.sub.2 F.sub.6                                                                        10                                                              3rd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.3  30→50*                                                   region                                                                            PF.sub.5 (against SiH.sub.4)                                                            50 ppm                                                          4th SiH.sub.4 100    300    5       0.4  0.7                                  layer                                                                             NH.sub.3  80→100*                                                  region                                                                            PF.sub.5 (against SiH.sub.4)                                                            500 ppm                                                     __________________________________________________________________________

                                      TABLE 192                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250    1       0.4  0.02                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30**                                                   (UL-side: 0.01 μm)                                                                     30→10**                                                    NO          5                                                                 GeH.sub.4   5                                                         Upper                                                                             1st SiH.sub.4   100    250    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                 2nd SiH.sub.4   300    300    20      0.5  20                                 layer                                                                             H.sub.2     500                                                           region                                                                        3rd SiH.sub.4   100    300    5       0.4  1                                  layer                                                                             GeH.sub.4   10→50*                                                 region                                                                            H.sub.2     300                                                           4th SiH.sub.4   100→40**                                                                      300    10      0.4  1                                  layer                                                                             CH.sub.4    100→600*                                               region                                                                    __________________________________________________________________________

                                      TABLE 193                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     300    1       0.3  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      NO        9                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     80 ppm                                                              GeH.sub.4 15                                                          Upper                                                                             1st SiH.sub.4 85     330    9       0.35 3                                layer                                                                             layer                                                                             H.sub.2   95                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        9                                                               2nd SiH.sub.4 300    300    15      0.5  20                                   layer                                                                             H.sub.2   400                                                             region                                                                        3rd SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 194                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     300    0.7     0.3  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      NO        8                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     80 ppm                                                              GeH.sub.4 15                                                          Upper                                                                             1st SiH.sub.4 70     300    8       0.35 3                                layer                                                                             layer                                                                             H.sub.2   80                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        8                                                               2nd SiH.sub.4 200    300    12      0.4  20                                   layer                                                                             H.sub.2   400                                                             region                                                                        3rd SiH.sub.4 40     300    7       0.3  0.5                                  layer                                                                             CH.sub.4  400                                                             region                                                                    __________________________________________________________________________

                                      TABLE 195                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 25     300    0.5     0.2  0.02                                     H.sub.2   5→100*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→15**                                                     (UL-side: 0.01 μm)                                                                   15→5**                                                       NO        7                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     80 ppm                                                              GeH.sub.4 4                                                           Upper                                                                             1st SiH.sub.4 55     300    7       0.35 3                                layer                                                                             layer                                                                             H.sub.2   70                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        7                                                               2nd SiH.sub.4 150    300    10      0.4  20                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 30     300    5       0.3  0.5                                  layer                                                                             CH.sub.4  300                                                             region                                                                    __________________________________________________________________________

                                      TABLE 196                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 20     300    0.3     0.2  0.02                                     H.sub.2   5→100*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    80→15**                                                      (UL-side: 0.01 μm)                                                                   15→5**                                                       NO        5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     80 ppm                                                              GeH.sub.4 4                                                           Upper                                                                             1st SiH.sub.4 45     300    6       0.35 3                                layer                                                                             layer                                                                             H.sub.2   60                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        5                                                               2nd SiH.sub.4 100    300    6       0.3  20                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 20     300    3       0.2  0.5                                  layer                                                                             CH.sub.4  200                                                             region                                                                    __________________________________________________________________________

                                      TABLE 197                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     500    5       0.4  0.05                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                                     C.sub.2 H.sub.2                                                                         5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     60 ppm                                                              GeH.sub.4 25                                                          Upper                                                                             1st SiH.sub.4 180    500    22      0.4  4                                layer                                                                             layer                                                                             H.sub.2   1200                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     700 ppm                                                             C.sub.2 H.sub.2                                                                         8                                                               2nd SiH.sub.4 300    500    30      0.5  10                                   layer                                                                             H.sub.2   1500                                                            region                                                                        3rd SiH.sub.4 200    500    30      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         10→20*                                                   region                                                                            NO        1                                                           __________________________________________________________________________

                                      TABLE 198                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            μW   Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          discharging                                                                           pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         power(mw/cm.sup.3)                                                                    (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 150    250    0.5     0.6  0.02                                     H.sub.2   20→500*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    400→80**                                                     (UL-side: 0.01 μm)                                                                   80→50**                                                      NO        10                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     60 ppm                                                              GeH.sub.4 40                                                          Upper                                                                             1st SiH.sub.4 350    250    0.5     0.5  3                                layer                                                                             layer                                                                             H.sub.2   350                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     600 ppm                                                             NO        13                                                                  SiF.sub.4 20                                                              2nd SiH.sub.4 700    250    0.5     0.5  20                                   layer                                                                             SiF.sub.4 30                                                              region                                                                            H.sub.2   500                                                             3rd SiH.sub. 4                                                                              150    250    0.5     0.3  1                                    layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 199                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    5       0.4  0.05                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                                     C.sub.2 H.sub.2                                                                         5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             GeH.sub.4 15                                                          Upper                                                                             1st SiH.sub.4 100    250    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                                   Si.sub.2 F.sub.6                                                                        5                                                               2nd SiH.sub.4 200    250    15      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         10→20*                                                   region                                                                            NO        1                                                                   SiF.sub.4 5                                                               3rd SiH.sub.4 300    250    15      0.5  10                                   layer                                                                             H.sub.2   300                                                             region                                                                            SiF.sub.4 5                                                           __________________________________________________________________________

                                      TABLE 200                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250    1       0.4  0.02                                    H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      N.sub.2   100                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                              GeH.sub.4 1→10*                                                Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     900→600 ppm**                                                N.sub.2   150                                                             2nd SiH.sub.4 100     300    15      0.4  20                                  layer                                                                             CH.sub.2  100                                                             region                                                                        3rd SiH.sub.4 300     300    20      0.5  5                                   layer                                                                             H.sub.2   300                                                             region                                                                        4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 201                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    5       0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      NH.sub.3  1→5*                                                         SnH.sub.4 2→20*                                                Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PF.sub.5 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.2  5                                                               region                                                                        3rd SiH.sub.4 100    300    5       0.2  8                                    layer                                                                             H.sub.2   300                                                             region                                                                            Si.sub.2 F.sub.6                                                                        5                                                               4th SiH.sub.4 100    300    10      0.4  0.3                                  layer                                                                             NH.sub.3  50                                                              region                                                                    __________________________________________________________________________

                                      TABLE 202                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    5       0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      NO        5→10*                                                        PF.sub.5 (against SiH.sub.4)                                                            10→100 ppm*                                                  GeH.sub.4 2→20*                                                Upper                                                                             1st SiH.sub.4 100    250    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PF.sub.5 (against SiH.sub.4)                                                            1000 ppm                                                            NO        10                                                              2nd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            PF.sub.5 (against SiH.sub.4)                                                            50 ppm                                                          3rd SiH.sub.4 100    300    3       0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 203                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250    5       0.4  0.05                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                            200→20**                                                   NO          10                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                           GeH.sub.4   10                                                        Upper                                                                             1st SiH.sub.4   100    300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                 2nd SiH.sub.4   300    330    20      0.4  30                                 layer                                                                             C.sub.2 H.sub.2                                                                           50                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                       3rd Si.sub.2 H.sub.6                                                                          200    300    10      0.5  10                                 layer                                                                             H.sub.2     200                                                           region                                                                        4th SiH.sub.4   200    330    10      0.4  1                                  layer                                                                             C.sub.2 H.sub.2                                                                           200                                                           region                                                                    __________________________________________________________________________

                                      TABLE 204                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    5       0.4  0.2                                      GeH.sub.4 1→10*                                                        NH.sub.3  1→5*                                                         H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                              Upper                                                                             1st SiH.sub.4 100    300    10      0.4  3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.3  30→50*                                                   region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                          3rd SiH.sub.4 100    300    5       0.4  8                                    layer                                                                             H.sub.2   300                                                             region                                                                        4th SiH.sub.4 100    300    5       0.4  0.7                                  layer                                                                             NH.sub.3  80→100*                                                  region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     500 ppm                                                     __________________________________________________________________________

                                      TABLE 205                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250    1       0.3  0.02                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30**                                                   (UL-side: 0.01 μm)                                                                     30→10**                                                    NO          10                                                                GeH.sub.4   5                                                         Upper                                                                             1st SiH.sub.4   100    250    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                     B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                       2nd SiH.sub.4   300    250    25      0.6  25                                 layer                                                                             He          600                                                           region                                                                        4th SiH.sub.4   50     250    10      0.4  1                                  layer                                                                             CH.sub.4    500                                                           region                                                                            NO          0.1                                                               N.sub.2     1                                                         __________________________________________________________________________

                                      TABLE 206                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    10      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      C.sub.2 H.sub.2                                                                         1→5*                                                         B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             GeH.sub.4 2→20*                                                Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                                   AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                             2nd SiH.sub.4 300    300    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             GeH.sub.4 1                                                               3rd SiH.sub.4 100    300    15      0.4  7                                    layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             GeH.sub.4 2                                                               4th SiH.sub.4 40     300    10      0.4  0.1                                  layer                                                                             CH.sub.4  600                                                             region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             PH.sub.3  1 ppm                                                               GeH.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 207                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250    5       0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      NO        5→10*                                                        PH.sub.3 (against SiH.sub.4)                                                            10→100 ppm*                                                  GeH.sub.4 (against SiH.sub.4)                                                           3→30                                                 Upper                                                                             1st SiH.sub.4 100    280    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NO        10                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 CH.sub.4  1                                                               2nd SiH.sub.4 100    300    3       0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                                 PH.sub.3 (against SiH.sub.4)                                                            0.3 ppm                                                             NO        0.5                                                                 CH.sub.4  1                                                                   AlCl.sub.3 /He                                                                          0.8                                                             3rd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            0.5 ppm                                                             AlCl.sub.3 /He                                                                          0.3                                                                 NO        0.3                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     50 ppm                                                          4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                            AlCl.sub.3 /He                                                                          0.3                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 PH.sub.3 (against SiH.sub.4)                                                            0.3 ppm                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.5 ppm                                                     __________________________________________________________________________

                                      TABLE 208                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    5       0.4  0.03                                     H.sub.2   10→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→10**                                                     (UL-side: 0.01 μm)                                                                   10                                                                  C.sub.2 H.sub.2                                                                         3→13*                                                        B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             GeH.sub.4 20                                                          Upper                                                                             1st SiH.sub.4 100    250    10      0.5  2                                layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1500 ppm                                                        region                                                                            C.sub.2 H.sub.2                                                                         13                                                                  H.sub.2   300                                                                 NO        1                                                               2nd SiH.sub.4 100    250    25      0.5  22                                   layer                                                                             H.sub.2   300                                                             region                                                                            C.sub.2 H.sub. 2                                                                        15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     40 ppm                                                          3rd SiH.sub.4 100    250    20      0.5  5                                    layer                                                                             C.sub.2 H.sub.2                                                                         10                                                              region                                                                            H.sub.2   150                                                             4th SiH.sub.4 60     250    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         60                                                              region                                                                            H.sub.2   50                                                          __________________________________________________________________________

                                      TABLE 209                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    5       0.4  0.03                                     H.sub.2   10→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→10**                                                     (UL-side: 0.01 μm)                                                                   10                                                                  C.sub.2 H.sub.2                                                                         3→13*                                                        PH.sub.3 (against SiH.sub.4)                                                            10→100 ppm*                                                  GeH.sub.4 10                                                                  SnH.sub.4 10                                                          Upper                                                                             1st SiH.sub.4 100    250    10      0.5  2                                layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                         13                                                              region                                                                            PH.sub.3 (against SiH.sub.4)                                                            1500 ppm                                                            H.sub.2   300                                                                 NO        1                                                               2nd SiH.sub.4 100    250    25      0.5  22                                   layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            H.sub.2   300                                                             3rd SiH.sub.4 100    250    20      0.5  5                                    layer                                                                             C.sub.2 H.sub.2                                                                         10                                                              region                                                                            H.sub.2   150                                                             4th SiH.sub.4 60     250    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         60                                                              region                                                                            H.sub.2   50                                                          __________________________________________________________________________

                                      TABLE 210                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100                                                                      *   300    10      0.4  0.2                                    H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40                                                                      **                                                             (UL-side: 0.15 μm)                                                                   40→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         1→5                                                                         *                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100  ppm                                                            GeH.sub.4 2→20                                                                        *                                                              H.sub.2 S (against SiH.sub.4)                                                           1    ppm                                                    Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                                   AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.4                                                                 H.sub.2 S 1    ppm                                                            SiF.sub.4 0.5                                                             2nd SiH.sub.4 300      300    20      0.5  20                                 layer                                                                             H.sub.2   500                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 NO        0.4                                                                 B.sub.2 H.sub.6                                                                         0.3  ppm                                                            SiF.sub.4 0.5                                                                 AlCl.sub.3 /He                                                                          0.3                                                                 H.sub.2 S 1    ppm                                                            GeH.sub.4 5                                                               3rd SiH.sub.4 100      300    15      0.4  7                                  layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                            NO        0.4                                                                 SiF.sub.4 0.5                                                                 AlCl.sub.3 /He                                                                          0.3                                                                 B.sub.2 H.sub.6                                                                         0.3  ppm                                                            H.sub.2 S 1    ppm                                                            GeH.sub.4 3                                                               4th SiH.sub.4 40       300    10      0.4  0.1                                layer                                                                             CH.sub.4  600                                                             region                                                                            NO        0.4                                                                 PH.sub.3  0.3                                                                 B.sub.2 H.sub.6                                                                         0.3                                                                 SiF.sub.4 0.5                                                                 AlCl.sub.3 /He                                                                          0.5                                                                 H.sub.2 S 1    ppm                                                            GeH.sub.4 2                                                           __________________________________________________________________________

                                      TABLE 211                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 NO        5                                                                   GeH.sub.4 10                                                          Upper                                                                             1st SiH.sub.4 100      300    10      0.35                                                                              3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                             2nd SiF.sub.4 0.1      300    20      0.5 5                                   layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4 )                                                    0.3  ppm                                                            GeH.sub.4 2                                                               3rd SiF.sub.4 0.5      300    15      0.4 20                                  layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            GeH.sub.4 3                                                               4th SiH.sub.4 50       300    10      0.4 0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            AlCl.sub.3 /He                                                                          0.4                                                                 SiF.sub.4 1                                                                   NO        0.3                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            GeH.sub.4 3                                                           __________________________________________________________________________

                                      TABLE 212                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4 0.02                                    H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                                 SnH.sub.4 20                                                          Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd SiH.sub.4 300      300    20      0.5  7                                  layer                                                                             SiF.sub.4 0.1                                                             region                                                                            H.sub.2   300                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 NO        2                                                                   AlCl.sub. 3 /He                                                                         0.1                                                                 SnH.sub.4 1                                                               3rd SiH.sub.4 100      300    15      0.4  20                                 layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 SnH.sub.4 2                                                               4th SiH.sub.4 50       300    10      0.4  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            AlCl.sub.3 /He                                                                          0.3                                                                 SiF.sub.4 1                                                                   NO        0.4                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            SnH.sub.4 2                                                           __________________________________________________________________________

                                      TABLE 213                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 NO        5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100  ppm                                                            GeH.sub.4 1→10                                                                        *                                                      Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                        region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 H.sub.2   150                                                                 NO        10                                                              2nd AlCl.sub.3 /He                                                                          0.1      300    20      0.5  3                                  layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.5→2                                                                       *                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            GeH.sub.4 2                                                               3rd SiF.sub.4 0.5      300    15      0.4  20                                 layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            NO        0.1                                                                 GeH.sub.4 3                                                               4th SiH.sub.4 50       300    10      0.4  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.5  ppm                                                            NO        0.2                                                                 AlCl.sub.3 /He                                                                          0.3                                                                 SiF.sub.4 0.3                                                                 GeH.sub.4 3                                                           __________________________________________________________________________

                                      TABLE 214                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 NO        10                                                                  BF.sub.3 (against SiH.sub.4)                                                            10   ppm                                                            GeH.sub.4 1→10                                                                        *                                                      Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                         0.1                                                             region                                                                            BF.sub.3 (against SiH.sub.4)                                                            1000 ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 H.sub.2   150                                                                 NO        10                                                              2nd SiH.sub.4 300      300    20      0.5  8                                  layer                                                                             C.sub.2 H.sub.2                                                                         1                                                               region                                                                            BF.sub.3 (against SiH.sub.4)                                                            10→0.3                                                                      ppm **                                                         AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.1                                                                 H.sub.2   300                                                                 NO        0.1                                                                 GeH.sub.4 2                                                               3rd SiH.sub.4 100      300    15      0.4  20                                 layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            BF.sub.3 (against SiH.sub.4)                                                            0.3  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 GeH.sub.4 4                                                               4th SiH.sub.4 50       300    15      0.5  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            BF.sub.3 (against SiH.sub.4)                                                            0.3  ppm                                                            AlCl.sub.3 /He                                                                          0.4                                                                 SiF.sub.4 1                                                                   NO        0.3                                                                 GeH.sub.4 2                                                           __________________________________________________________________________

                                      TABLE 215                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 NO        5→10                                                                        *                                                              GeH.sub.4 20                                                          Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                             2nd SiH.sub.4 300      300    20      0.5  5                                  layer                                                                             H.sub.2   300                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            SiF.sub.4 0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 GeF.sub.4 2                                                               3rd SiH.sub.4 100      300    15      0.4  20                                 layer                                                                             NO        0.1                                                             region                                                                            SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                               (U · 2nd LR-side: 1 μm)                                                     0.1→15                                                                      *                                                              (U · 4th LR-side: 19 μm)                                                    15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            GeF.sub.4 4                                                               4th SiH.sub.4 50       300    10      0.4  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.5  ppm                                                            SiF.sub.4 1                                                                   AlCl.sub.3 /He                                                                          0.3                                                                 GeF.sub.4 1                                                           __________________________________________________________________________

                                      TABLE 216                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 NO        10                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10→100                                                                      ppm *                                                          GeF.sub.4 20                                                          Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                             2nd SiF.sub.4 0.1      300    20      0.5  2                                  layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            GeF.sub.4 2                                                               3rd SiF.sub.4 0.5      300    15      0.4  20                                 layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                               (U · 2nd LR-side: 5 μm)                                                     0.1→13                                                                      *                                                              (U · 4th LR-side: 15 μm)                                                    13→17                                                                       *                                                              AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            GeF.sub.4 1                                                               4th SiH.sub.4 50       300    10      0.4  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                         40                                                              region                                                                            AlCl.sub.3 /He                                                                          0.2                                                                 SiF.sub.4 0.5                                                                 NO        0.3                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.2  ppm                                                            GeF.sub.4 2                                                           __________________________________________________________________________

                                      TABLE 217                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                                 GeH.sub.4 10                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                           (S-side: 0.01 μm)                                                                    10                                                                  (UL-side: 0.01 μm)                                                                   10→100                                                                      *                                                      Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd SiH.sub.4 300      300    20      0.5  5                                  layer                                                                             SiF.sub.4 0.1                                                             region                                                                            H.sub.2   300                                                                 B.sub.2 H.sub. 6 (against SiH.sub.4)                                                    0.3  ppm                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 NO        0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 GeH.sub.4 1                                                               3rd NO        0.1      300    15      0.4  20                                 layer                                                                             SiF.sub.4 0.5                                                             region                                                                            C.sub.2 H.sub.2                                                               (U · 2nd LR-side: 19 μm)                                                    15                                                                  (U · 4th LR-side: 1 μm)                                                     15→30                                                                       *                                                              SiH.sub.4                                                                     (U · 2nd LR-side: 19 μm)                                                    100                                                                 (U · 4th LR-side: 1 μm)                                                     100→50                                                                      **                                                             AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            GeH.sub.4 2                                                               4th SiH.sub.4 50       300    10      0.4  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                         25                                                              region                                                                            AlCl.sub.3 /He                                                                          0.3                                                                 SiF.sub.4 0.5                                                                 NO        0.3                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.5  ppm                                                            GeH.sub.4 1                                                           __________________________________________________________________________

                                      TABLE 218                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         5                                                                   NO        0.1                                                                 GeF.sub.4                                                                     (S-side: 0.01 μm)                                                                    2                                                                   (UL-side: 0.01 μm)                                                                   2→5                                                                         *                                                              GeH.sub.4 10                                                          Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                        region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 H.sub.2   150                                                                 NO        10                                                              2nd AlCl.sub.3 /He                                                                          0.1      300    20      0.5  5                                  layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            GeF.sub.4 2                                                               3rd SiF.sub.4 0.5      300    15      0.4  20                                 layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10   ppm                                                            NO        0.1                                                                 GeF.sub.4 2                                                               4th SiH.sub.4 50       300    10      0.4  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.5  ppm                                                            NO        0.2                                                                 AlCl.sub.3 /He                                                                          0.3                                                                 SiF.sub.4 0.4                                                                 GeF.sub.4 1                                                           __________________________________________________________________________

                                      TABLE 219                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         1→6                                                                         *                                                              NO        0.1                                                                 GeH.sub.4 15                                                          Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                         0.1                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 H.sub.2   150                                                                 NO        10                                                              2nd SiH.sub.4 300      300    20      0.5  6                                  layer                                                                             C.sub.2 H.sub.2                                                                         0.1                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.1                                                                 H.sub. 2  300                                                                 NO        0.1                                                                 GeH.sub.4 2                                                               3rd SiH.sub.4 100      300    15      0.4  20                                 layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     12→0.3                                                                      **                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 GeH.sub.4 2                                                               4th SiH.sub.4 60       300    10      0.4  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            AlCl.sub.3 /He                                                                          1                                                                   SiF.sub.4 0.5                                                                 NO        0.3                                                                 GeH.sub.4 1                                                           __________________________________________________________________________

                                      TABLE 220                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         3                                                                   NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100  ppm                                                            Si.sub.2 F.sub.6                                                                        3                                                                   GeH.sub.4 10                                                          Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  Si.sub.2 F.sub.6                                                                        0.5                                                             2nd SiH.sub.4 300      300    20      0.5  5                                  layer                                                                             H.sub.2   300                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            Si.sub.2 F.sub.4                                                                        0.5                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 GeH.sub.4 4                                                               3rd Si.sub.2 F.sub.6                                                                        0.5      300    15      0.4  20                                 layer                                                                             NO        0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  PH.sub.3 (against SiH.sub.4)                                                            8    ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1  ppm                                                            GeH.sub.4 1                                                               4th SiH.sub.4 50       300    10      0.4  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.3                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.5  ppm                                                            Si.sub.2 F.sub.6                                                                        1                                                                   PH.sub.3 (against SiH.sub.4)                                                            0.1  ppm                                                            AlCl.sub.3 /He                                                                          0.5                                                                 GeH.sub.4 1                                                           __________________________________________________________________________

                                      TABLE 221                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         3                                                                   NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10→100                                                                      ppm *                                                          SiF.sub.4 5                                                                   GeH.sub.4 10                                                          Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                             2nd SiF.sub.4 0.1      300    20      0.5  5                                  layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub. 3 /He                                                                         0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            GeH.sub.4 1                                                               3rd SiF.sub.4 0.5      300    15      0.4  20                                 layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  PH.sub.3 (against SiH.sub.4)                                                            10→0.3                                                                      **                                                             AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            GeH.sub.4 2                                                               4th SiH.sub.4 50       300    15      0.4  0.6                                layer                                                                             C.sub.2 H.sub.2                                                                         20                                                              region                                                                            AlCl.sub.3 /He                                                                          0.2                                                                 SiF.sub.4 0.5                                                                 NO        0.3                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.4  ppm                                                            PH.sub.3 (against SiH.sub.4)                                                            0.3  ppm                                                            GeH.sub.4 1                                                           __________________________________________________________________________

                                      TABLE 222                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                                 GeH.sub.4 1→10                                                                        *                                                              H.sub.2 S 1    ppm                                                    Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                                 H.sub.2 S (against SiH.sub.4)                                                           1    ppm                                                        2nd SiH.sub.4 300      300    20      0.5  5                                  layer                                                                             SiF.sub.4 0.1                                                             region                                                                            H.sub.2   300                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 NO        0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 H.sub.2 S (against SiH.sub.4)                                                           1    ppm                                                            GeH.sub.4 2                                                               3rd NO        0.1      300    15      0.4  20                                 layer                                                                             SiF.sub.4 0.5                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  SiH.sub.4 100                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            H.sub.2 S (against SiH.sub.4)                                                           1    ppm                                                            GeH.sub.4 1                                                               4th SiH.sub.4 50       300    15      0.5  0.6                                layer                                                                             C.sub.2 H.sub.2                                                                         20                                                              region                                                                            AlCl.sub.3 /He                                                                          0.2                                                                 SiF.sub.4 0.8                                                                 NO        0.4                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            H.sub.2 S (against SiH.sub.4)                                                           1    ppm                                                            GeH.sub.4 2                                                           __________________________________________________________________________

                                      TABLE 223                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 NO        5                                                                   GeH.sub.4 10                                                          Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                        region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 H.sub.2   150                                                                 NO        10                                                              2nd AlCl.sub.3 /He                                                                          0.1      300    20      0.5  5                                  layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4 )                                                    0.3  ppm                                                            GeH.sub.4 1                                                               3rd SiF.sub.4 0.5      300    15      0.4  10                                 layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            NO        0.1                                                                 GeH.sub.4 2                                                               4th SiH.sub.4 60       300    15      0.5  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                         40                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.4  ppm                                                            NO        0.3                                                                 AlCl.sub.3 /He                                                                          0.2                                                                 SiF.sub.4 0.6                                                                 GeH.sub.4 1                                                           __________________________________________________________________________

                                      TABLE 224                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 NO        10                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     150  ppm                                                            SiF.sub.4 5                                                                   GeH.sub.4 20                                                          Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                         0.1                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 H.sub.2   150                                                                 NO        10                                                              2nd SiH.sub.4 300      300    20      0.5  5                                  layer                                                                             C.sub.2 H.sub.2                                                                         0.1                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.1                                                                 H.sub.2   300                                                                 NO        0.1                                                                 GeH.sub.4 1                                                               3rd SiH.sub.4 100      300    15      0.4  30                                 layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 GeH.sub.4 2                                                               4th SiH.sub.4 60       300    15      0.5  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                         40                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.5  ppm                                                            AlCl.sub.3 /He                                                                          0.2                                                                 SiF.sub.4 0.5                                                                 NO        0.2                                                                 GeH.sub.4 3                                                           __________________________________________________________________________

                                      TABLE 225                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         2                                                                   NO        5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     30   ppm                                                            GeH.sub.4 10                                                          Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                             2nd SiH.sub.4 300      300    20      0.5  5                                  layer                                                                             H.sub.2   300                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub. 4)                                                    0.3  ppm                                                            SiF.sub.4 0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 GeH.sub.4 1                                                               3rd SiF.sub.4 0.5      300    15      0.4  20                                 layer                                                                             NO        0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 NH.sub.3  100                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            GeH.sub.4 2                                                               4th SiH.sub.4 55       300    15      0.5  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.2                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.4  ppm                                                            SiF.sub.4 1                                                                   AlCl.sub.3 /He                                                                          0.2                                                                 GeH.sub.4 3                                                           __________________________________________________________________________

                                      TABLE 226                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         1→3                                                                         *                                                              NO        3                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100  ppm                                                            GeH.sub.4 15                                                          Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd SiF.sub.4 0.1      300    20      0.5  2                                  layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            GeH.sub.4 1                                                               3rd SiF.sub.4 0.5      300    15      0.4  20                                 layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.4                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            N.sub.2   500                                                                 GeH.sub.4 1                                                               4th SiH.sub.4 50       300    10      0.4  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                         25                                                              region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.3                                                                 NO        0.2                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            GeH.sub.4 1                                                           __________________________________________________________________________

                                      TABLE 227                                   __________________________________________________________________________    Order of                   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                 temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          Gases and their flow rates (SCCM)                                                                (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200                                                                       *                                                              AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30                                                                      **                                                             (UL-side: 0.01 μm)                                                                   30→10                                                                       **                                                             C.sub.2 H.sub.2                                                                         2                                                                   NO        5→8                                                                         *                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10→100                                                                      ppm *                                                          SnH.sub.4 20                                                          Upper                                                                             1st SiH.sub.4 100      300    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800  ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1      300    15      0.4  20                                 layer                                                                             SiF.sub.4 5                                                               region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            NO        0.1                                                                 SnH.sub.4 1                                                               3rd AlCl.sub.3 /He                                                                          0.1      300    20      0.5  5                                  layer                                                                             SiF.sub.4 0.5                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3  ppm                                                            SnH.sub.4 2                                                               4th SiH.sub.4 60       300    10      0.5  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                         20                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.4  ppm                                                            AlCl.sub.3 /He                                                                          0.2                                                                 SiF.sub.4 1                                                                   NO        0.3                                                                 SnH.sub.4 2                                                           __________________________________________________________________________

                                      TABLE 228                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250    1       0.4  0.02                                      H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    C.sub.2 H.sub.2                                                                         2                                                                   NO        5 → 8*                                                       B.sub.2 H.sub.6 (against SiH.sub.4)                                           (S-side: 0.01 μm)                                                                    50                                                                  (UL-side: 0.01 μm)                                                                   50 → 100*                                                    GeH.sub.4 20                                                          Upper                                                                             1st SiH.sub.4 100   300    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                             2nd SiF.sub.4 0.5   300    15      0.4  20                                    layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub. 2 H.sub.2                                                                        15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                              GeH.sub.4 2                                                               3rd SiF.sub.4 0.5   300    20      0.5  4                                     layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             GeH.sub.4 1                                                               4th SiH.sub.4 60    300    15      0.5  0.4                                   layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            AlCl.sub.3 /He                                                                          0.5                                                                 SiF.sub.4 0.5                                                                 NO        0.2                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.4 ppm                                                             GeH.sub.4 1                                                           __________________________________________________________________________

                                      TABLE 229                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250    1       0.4  0.02                                      H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                                 GeH.sub.4 15                                                          Upper                                                                             1st SiH.sub.4 100   300    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                             2nd SiH.sub.4 100   300    15      0.4  20                                    layer                                                                             SiF.sub.4 0.5                                                             region                                                                            GeH.sub.4 2                                                                   C.sub.2 H.sub.2                                                                         15                                                                  PH.sub.3 (against SiH.sub.4)                                                            8 ppm                                                               NO        0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                             3rd NO        0.1   300    20      0.5  6                                     layer                                                                             SiF.sub.4 0.5                                                             region                                                                            H.sub.2   300                                                                 SiH.sub.4 300                                                                 PH.sub.3 (against SiH.sub.4)                                                            0.1 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                             4th SiH.sub.4 50    300    10      0.5  0.6                                   layer                                                                             C.sub.2 H.sub.2                                                                         20                                                              region                                                                            AlCl.sub.3 /He                                                                          0.2                                                                 SiF.sub.4 0.5                                                                 NO        0.2                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             GeH.sub.4 1                                                                   PH.sub.3 (against SiH.sub.4)                                                            0.1 ppm                                                     __________________________________________________________________________

                                      TABLE 230                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250    1       0.4  0.02                                    H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    C.sub.2 H.sub.2                                                                         10                                                                  NO        0.1                                                                 GeH.sub.4 15                                                          Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                         region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 H.sub.2   150                                                                 NO        10                                                              2nd AlCl.sub.3 /He                                                                          0.1     300    15      0.4  20                                  layer                                                                             SiF.sub.4 0.5                                                             region                                                                            SiH.sub.4 100                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     12 → 0.3 ppm**                                               GeH.sub.4 1                                                               3rd SiF.sub.4 0.5     300    20      0.5  3                                   layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                                 GeH.sub.4 1                                                               4th SiH.sub.4 50      300    15      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.2 ppm                                                             NO        0.3                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.4                                                                 GeH.sub.4 0.5                                                         __________________________________________________________________________

                                      TABLE 231                                   __________________________________________________________________________    Order of                                                                              Gases and     Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                               lamination                                                                            their flow rates                                                                            temperature                                                                          power   pressure                                                                           thickness                           (layer name)                                                                          (SCCM)        (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                             __________________________________________________________________________    Lower layer                                                                           SiH.sub.4                                                                             50    250    5       0.4  0.05                                        H.sub.2 10 → 200*                                                      AlCl.sub.3 /He                                                                        120 → 40**                                                     Mg(C.sub.5 H.sub.5).sub.2 /He                                                         10                                                            Upper                                                                             1st SiH.sub.4                                                                             100   250    10      0.35 3                                   layer                                                                             layer                                                                             H.sub.2 100                                                               region                                                                            NO      30                                                                2nd SiH.sub.4                                                                             300   250    15      0.5  20                                      layer                                                                             H.sub.2 300                                                               region                                                                        3rd SiH.sub.4                                                                             50    250    10      0.4  0.5                                     layer                                                                             CH.sub.4                                                                              500                                                               region                                                                    __________________________________________________________________________

                                      TABLE 232                                   __________________________________________________________________________    Order of                                                                              Gases and   Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                                 lamination                                                                            their flow rates                                                                          temperature                                                                          power   pressure                                                                           thickness                             (layer name)                                                                          (SCCM)      (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                               __________________________________________________________________________    Lower layer                                                                           SiH.sub.4                                                                           50    250    5       0.4  0.05                                          AlCl.sub.3 /He                                                                      120 → 40**                                               Upper                                                                             1st SiH.sub.4                                                                           100   250    10      0.35 3                                     layer                                                                             layer                                                                             H.sub.2                                                                             100                                                                 region                                                                            NO    30                                                                  2nd SiH.sub.4                                                                           300   250    15      0.5  20                                        layer                                                                             H.sub.2                                                                             300                                                                 region                                                                        3rd SiH.sub.4                                                                           50    250    10      0.4  0.5                                       layer                                                                             CH.sub.4                                                                            500                                                                 region                                                                    __________________________________________________________________________

                                      TABLE 233                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250    5       0.4  0.02                                      H.sub.2   10 → 200*                                                    AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100 → 10**                                                   (UL-side: 0.01 μm)                                                                   10                                                                  Mg(C.sub.5 H.sub.5).sub.2 /He                                                           5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             NO        3                                                           Upper                                                                             1st SiH.sub.4 300   250    10      0.4  3                                 layer                                                                             layer                                                                             H.sub.2   300                                                             region                                                                            NO        30                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                         2nd SiH.sub.4 300   250    15      0.5  20                                    layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 50    250    10      0.4  0.5                                   layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 234                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    150    0.5     0.3  0.02                                      H.sub.2   5 → 200*                                                                     ↓                                                                             ↓                                               AlCl.sub.3 /He  300    1.5                                                    (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    Mg(C.sub.5 H.sub.5).sub.2 /He                                                           8                                                           Upper                                                                             1st SiH.sub.4 100   270    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        10                                                              2nd SiH.sub.4 300   250    20      0.5  20                                    layer                                                                             H.sub.2   500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 235                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250    1       0.3  0.02                                      H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    NO        10                                                                  SiF.sub.4 0.2                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     50 ppm                                                              CH.sub.4  0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           5                                                           Upper                                                                             1st SiH.sub.4 100   250    10      0.35 3                                 layer                                                                             layer                                                                             He        100                                                             region                                                                            AlCl.sub.3 /He                                                                          0.3                                                                 SiF.sub.4 0.5                                                                 CH.sub.4  1                                                                   NO        10                                                                  Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     300 ppm                                                         2nd SiH.sub.4 300   250    25      0.6  25                                    layer                                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             region                                                                            He        600                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.2                                                                 CH.sub.4  0.5                                                                 NO        0.1                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                         3rd SiH.sub.4 50    250    10      0.4  1                                     layer                                                                             CH.sub.4  500                                                             region                                                                            NO        0.1                                                                 SiF.sub.4 0.5                                                                 AlCl.sub.3 /He                                                                          0.5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.5                                                                 N.sub.2   1                                                           __________________________________________________________________________

                                      TABLE 236                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10 → 100*                                                                    250    10      0.4  0.2                                       H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200 → 40**                                                   (UL-side: 0.15 μm)                                                                   40 → 10**                                                    NH.sub.3  1 → 4*                                                       Mg(C.sub.5 H.sub.5).sub.2 /He                                                           1 → 10*                                              Upper                                                                             1st SiH.sub.4 100   250    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  4                                                               2nd SiH.sub.4 400   250    10      0.5  15                                    layer                                                                             Ar        200                                                             region                                                                        3rd SiH.sub.4 100   250    5       0.4  0.3                                   layer                                                                             NH.sub.3  30                                                              region                                                                    __________________________________________________________________________

                                      TABLE 237                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10 → 100*                                                                    300    10      0.4  0.2                                       H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200 → 40**                                                   (UL-side: 0.15 μm)                                                                   40 → 10**                                                    C.sub.2 H.sub.2                                                                         1 → 5*                                                       B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           1 → 5*                                               Upper                                                                             1st SiH.sub.4 100   300    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                               2nd SiH.sub.4 300   300    20      0.5  20                                    layer                                                                             H.sub.2   500                                                             region                                                                            SiF.sub.4 50                                                              3rd SiH.sub.4 100   300    15      0.4  7                                     layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3  (against SiH.sub.4)                                                           3000 ppm                                                        4th SiH.sub.4 40    300    10      0.4  0.1                                   layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 238                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    330    5       0.4  0.05                                      H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                          200 → 20**                                                   NO        5                                                                   PH.sub.3 (against SiH.sub.4)                                                            100 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           5                                                           Upper                                                                             1st SiH.sub.4 100   330    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NO        10                                                              2nd SiH.sub.4 400   330    25      0.5  25                                    layer                                                                             SiF.sub.4 10                                                              region                                                                            H.sub.2   800                                                             3rd SiH.sub.4 100   350    15      0.4  5                                     layer                                                                             CH.sub.4  400                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     5000 ppm                                                        4th SiH.sub.4 20    350    10      0.4  1                                     layer                                                                             CH.sub.4  400                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                     __________________________________________________________________________

                                      TABLE 239                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       300    1       0.3  0.02                                   H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             N.sub.2   100 → 150*                                                   H.sub.2 S 10 ppm                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                           10                                                          Upper                                                                             1st SiH.sub.4 100      300    10      0.35 5                              layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     900 → 600 ppm**                                              N.sub.2   150                                                             2nd SiH.sub.4 300      300    20      0.5  20                                 layer                                                                             H.sub.2   200                                                             region                                                                        3rd SiH.sub.4 50       300    20      0.4  5                                  layer                                                                             N.sub.2   500                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                        4th SiH.sub.4 40       300    10      0.4  0.3                                layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 240                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250    1       0.4  0.02                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             C.sub.2 H.sub.2                                                                         0.5                                                                 H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    Mg(C.sub.5 H.sub.5).sub.2 /He                                                           3                                                           Upper                                                                             1st SiH.sub.4 100   250    10      0.4  0.3                               layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                               2nd SiH.sub.4 300   250    15      0.5  10                                    layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 200   250    15      0.4  20                                    layer                                                                             C.sub.2 H.sub.2                                                                         10 → 20*                                                 region                                                                            NO        1                                                           __________________________________________________________________________

                                      TABLE 241                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250    1       0.4  0.02                                      H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200 → 30**                                                   (UL-side: 0.01 μm)                                                                   30 → 10**                                                    N.sub.2   100                                                                 H.sub.2 S (against SiH.sub.4)                                                           10 ppm                                                              BF.sub.3  10 ppm                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                           5                                                           Upper                                                                             1st SiH.sub.4 100   300    10       0.35 3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            BF.sub.3 (against SiH.sub.4)                                                            1000 ppm                                                            N.sub.2   150                                                             2nd SiH.sub.4 300   300    20       0.5  5                                    layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 100   300    15       0.4  20                                   layer                                                                             CH.sub.4  100                                                             region                                                                        4th SiH.sub.4 50    300    10       0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 242                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10 → 100*                                                                    300    5       0.4  0.2                                       H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200 → 40**                                                   (UL-side: 0.15 μm)                                                                   40 → 10**                                                    NH.sub.3  1 → 5*                                                       Mg(C.sub.5 H.sub.5).sub.2 /He                                                           1 → 10*                                                      PH.sub.3 (against SiH.sub.4)                                                            100 ppm                                                     Upper                                                                             1st SiH.sub.4 100   300    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 100   300    5       0.2  8                                     layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 300   300    15      0.4  25                                    layer                                                                             NH.sub.3  50                                                              region                                                                        4th SiH.sub.4 100   300    10      0.4  0.3                                   layer                                                                             NH.sub.3  50                                                              region                                                                    __________________________________________________________________________

                                      TABLE 243                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10 → 100*                                                                       250    5       0.4  0.2                                    H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200 → 40**                                                   (UL-side: 0.15 μm)                                                                   40 → 10**                                                    NO        5 → 10*                                                      PF.sub.5 (against SiH.sub.4)                                                            10 → 100 ppm*                                                Mg(C.sub.5 H.sub.5).sub.2 /He                                                           5 → 10*                                              Upper                                                                             1st SiH.sub.4 100      280    10      0.35 3                              layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PF.sub.5 (against SiH.sub.4)                                                            1000 ppm                                                            NO        10                                                              2nd SiH.sub.4 100      300    3       0.5  3                                  layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                             3rd SiH.sub.4 100      300    15      0.4  30                                 layer                                                                             CH.sub.4  100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     50 ppm                                                          4th SiH.sub.4 50       300    10      0.4  0.5                                layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 244                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50    250    5       0.4  0.05                                    H.sub.2     5 → 200*                                                   AlCl.sub.3 /He                                                                            200 → 20**                                                 NO          10                                                                B.sub.2 H.sub.6 (against SiH.sub.4                                                        100 ppm                                                           Si.sub.2 F.sub.6                                                                          5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                             3                                                         Upper                                                                             1st SiH.sub.4   100   300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2     150                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10 → 0**                                               2nd Si.sub.2 H.sub.6                                                                          200   300    10      0.5  10                                  layer                                                                             H.sub.2     200                                                           region                                                                        3rd SiH.sub.4   300   330    20      0.4  30                                  layer                                                                             C.sub.2 H.sub.2                                                                           50                                                            region                                                                            PH.sub.3 (against SiH.sub.4 )                                                             100 ppm                                                       4th SiH.sub.4   200   330    10      0.4  1                                   layer                                                                             C.sub.2 H.sub.2                                                                           200                                                           region                                                                    __________________________________________________________________________

                                      TABLE 245                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10 → 100*                                                                    250    5       0.4  0.2                                       H.sub.2   5 → 200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200 → 40**                                                   (UL-side: 0.15 μm)                                                                   40 → 10**                                                    NH.sub.3  1 → 5*                                                       B.sub.2 H.sub.6 (against SiH.sub.4)                                                     150 ppm                                                             GeH.sub.4 5                                                                   Mg(C.sub.5 H.sub.5).sub.2 /He                                                           5 → 1**                                                      Si.sub.2 F.sub.6                                                                        1 → 8*                                               Upper                                                                             1st SiH.sub.4 100   270    10      0.35 3                                 layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 100   300    5       0.2  8                                     layer                                                                             H.sub.2   300                                                             region                                                                            Si.sub.2 F.sub.6                                                                        10                                                              3rd SiH.sub.4 300   300    15      0.4  25                                    layer                                                                             NH.sub.3  30 → 50*                                                 region                                                                            PF.sub.5 (against SiH.sub.4)                                                            50 ppm                                                          4th SiH.sub.4 100   300    5       0.4  0.7                                   layer                                                                             NH.sub.3  80 → 100*                                                region                                                                            PF.sub.5 (against SiH.sub.4)                                                            500 ppm                                                     __________________________________________________________________________

                                      TABLE 246                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.2)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50    250    1       0.4  0.02                                    H.sub.2     5 → 200*                                                   AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200 → 30**                                                 (UL-side: 0.01 μm)                                                                     30 → 10**                                                  GeH.sub.4   5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                             3                                                         Upper                                                                             1st SiH.sub.4   100   250    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10 → 0**                                               2nd SiH.sub.4   300   300    20      0.5  20                                  layer                                                                             H.sub.2     500                                                           region                                                                        3rd SiH.sub.4   100   300    5       0.4  1                                   layer                                                                             GeH.sub.4   10 → 50*                                               region                                                                            H.sub.2     300                                                           4th SiH.sub.4   100 → 40**                                                                   300    10      0.4  1                                   layer                                                                             CH.sub.4    100 → 600*                                             region                                                                    __________________________________________________________________________

                                      TABLE 247                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     300     1      0.3  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      NO        9                                                                   B.sub.2 H.sub.6  (against SiH.sub.4)                                                    80 ppm                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                           8                                                           Upper                                                                             1st SiH.sub.4 85     330     9       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   90                                                              region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                    800 ppm                                                             NO        9                                                               2nd SiH.sub.4 300    300    15      0.5  20                                   layer                                                                             H.sub.2   400                                                             region                                                                        3rd SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 248                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     300    0.7     0.3  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      NO        8                                                                   B.sub.2 H.sub.6  (against SiH.sub.4)                                                    80 ppm                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                           5                                                           Upper                                                                             1st SiH.sub.4 70     300    8        0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   80                                                              region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                    800 ppm                                                             NO        8                                                               2nd SiH.sub.4 200    300    12      0.4  20                                   layer                                                                             H.sub.2   400                                                             region                                                                        3rd SiH.sub.4 40     300    7       0.3  0.5                                  layer                                                                             CH.sub.4  400                                                             region                                                                    __________________________________________________________________________

                                      TABLE 249                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 25     300    0.5     0.2  0.02                                     H.sub.2   5→100*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→15**                                                     (UL-side: 0.01 μm)                                                                   15→5**                                                       NO        7                                                                   B.sub.2 H.sub.6  (against SiH.sub.4)                                                    80 ppm                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                           3                                                           Upper                                                                             1st SiH.sub.4 55     300    7        0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   70                                                              region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                    800 ppm                                                             NO        7                                                               2nd SiH.sub.4 150    300    10      0.4  20                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 30     300    5       0.3  0.5                                  layer                                                                             CH.sub.4  300                                                             region                                                                    __________________________________________________________________________

                                      TABLE 250                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 20     300    0.3     0.2  0.02                                     H.sub.2   5→100*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    80→15**                                                      (UL-side: 0.01 μm)                                                                   15→5**                                                       NO        5                                                                   B.sub.2 H.sub.6  (against SiH.sub.4)                                                    80 ppm                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                           3                                                           Upper                                                                             1st SiH.sub.4 45     300    6        0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   60                                                              region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                    800 ppm                                                             NO        5                                                               2nd SiH.sub.4 100    300    6       0.3  20                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 20     300    3       0.2  0.5                                  layer                                                                             CH.sub.4  200                                                             region                                                                    __________________________________________________________________________

                                      TABLE 251                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     500     5      0.4  0.05                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                                     C.sub.2 H.sub.2                                                                         5                                                                   B.sub.2 H.sub.6  (against SiH.sub.4)                                                    60 ppm                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                           10                                                          Upper                                                                             1st SiH.sub.4 180    500    22      0.4  4                                layer                                                                             layer                                                                             H.sub.2   1200                                                            region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                    700 ppm                                                             C.sub.2 H.sub.2                                                                         8                                                               2nd SiH.sub.4 300    500    30      0.5  10                                   layer                                                                             H.sub.2   1500                                                            region                                                                        3rd SiH.sub.4 200    500    30      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         10→20*                                                   region                                                                            NO        1                                                           __________________________________________________________________________

                                      TABLE 252                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            μW    Inner                                                                              Layer                           lamination                                                                            their flow rates temperature                                                                          discharging                                                                            pressure                                                                           thickness                       (layer name)                                                                          (SCCM)           (°C.)                                                                         power (mW/cm.sup.3)                                                                    (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 150    250    0.5      0.6  0.02                                    H.sub.2   20→500*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    400→80**                                                     (UL-side: 0.01 μm)                                                                   80→50**                                                      NO        10                                                                  B.sub.2 H.sub.6  (against SiH.sub.4)                                                    60 ppm                                                              SiF.sub.4 20                                                                  Mg(C.sub.5 H.sub.5).sub.2 /He                                                           15                                                          Upper                                                                             1st SiH.sub.4 350    250    0.5      0.5  3                               layer                                                                             layer                                                                             H.sub.2   350                                                             region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                    600 ppm                                                             NO        13                                                                  SiF.sub.4 20                                                              2nd SiH.sub.4 700    250    0.5      0.5  20                                  layer                                                                             SiF.sub.4 30                                                              region                                                                            H.sub.2   500                                                             3rd SiH.sub.4 150    250    0.5      0.3  1                                   layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 253                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     5      0.4  0.05                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                                     C.sub.2 H.sub.2                                                                         5                                                                   B.sub.2 H.sub.6  (against SiH.sub.4)                                                    100 ppm                                                             SiF.sub.4 1                                                                   Mg(C.sub.5 H.sub.5).sub.2 /He                                                           5                                                           Upper                                                                             1st SiH.sub.4 100    250    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                    1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                                   SiF.sub.4 5                                                               2nd SiH.sub.4 200    250    15      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         10→20*                                                   region                                                                            NO        1                                                                   SiF.sub.4 5                                                               3rd SiH.sub.4 300    250    15      0.5  10                                   layer                                                                             H.sub.2   300                                                             region                                                                            SiF.sub.4 5                                                           __________________________________________________________________________

                                      TABLE 254                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50       250     1      0.4  0.02                                   H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      N.sub.2   100                                                                 B.sub.2 H.sub.6  (against SiH.sub.4)                                                    10 ppm                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                           1→10*                                                Upper                                                                             1st SiH.sub.4 100      300    10       0.35                                                                              3                              layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                    900→600 ppm**                                                N.sub.2   150                                                             2nd SiH.sub.4 100      300    15      0.4  20                                 layer                                                                             CH.sub.4  100                                                             region                                                                        3rd SiH.sub.4 300      300    20      0.5  5                                  layer                                                                             H.sub.2   300                                                             region                                                                        4th SiH.sub.4 50       300    10      0.4  0.5                                layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 255                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300     5      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.01 μm)                                                                   40→10**                                                      NH.sub.3  1→5*                                                         Mg(C.sub.3 H.sub.5).sub.2 /He                                                           8                                                                   SiH.sub.4 2→20*                                                Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PF.sub.5  (against SiH.sub.4)                                                           800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.2  50                                                              region                                                                        3rd SiH.sub.4 100    300     5      0.2  8                                    layer                                                                             H.sub.2   300                                                             region                                                                            Si.sub.2 F.sub.6                                                                        5                                                               4th SiH.sub.4 100    300    10      0.4  0.3                                  layer                                                                             NH.sub.3  50                                                              region                                                                    __________________________________________________________________________

                                      TABLE 256                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250     5      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      NO        1                                                                   Mg(C.sub.5 H.sub.5).sub.2 /He                                                           10                                                                  PF.sub.5  (against SiH.sub.4)                                                           10→100 ppm*                                          Upper                                                                             1st SiH.sub.4 100    250    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PF.sub.5  (against SiH.sub.4)                                                           1000 ppm                                                            NO        10                                                              2nd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            PF.sub.5  (against SiH.sub.4)                                                           50 ppm                                                          3rd SiH.sub.4 100    300     3      0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 257                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     5      0.4  0.05                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                            200→20**                                                   NO          10                                                                B.sub.2 H.sub.6  (against SiH.sub.4)                                                      100 ppm                                                           Mg(C.sub.5 H.sub.5).sub.2 /He                                                             10                                                        Upper                                                                             1st SiH.sub.4   100    300    10       0.35                                                                              3                              layer                                                                             layer                                                                             H.sub.2     100                                                           region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                      800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                 2nd SiH.sub.4   300    330    20      0.4  30                                 layer                                                                             C.sub.2 H.sub.2                                                                           50                                                            region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                      100 ppm                                                       3rd Si.sub.2 H.sub.6                                                                          200    300    10      0.5  10                                 layer                                                                             H.sub.2     200                                                           region                                                                        4th SiH.sub.4   200    330    10      0.4  1                                  layer                                                                             C.sub.2 H.sub.2                                                                           200                                                           region                                                                    __________________________________________________________________________

                                      TABLE 258                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250     5      0.4  0.2                                      Mg(C.sub.5 H.sub.5).sub.2 /He                                                           1→10*                                                        NH.sub.3  1→5*                                                         H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      PF.sub.3  (against SiH.sub.4)                                                           50 ppm                                                      Upper                                                                             1st SiH.sub.4 100    300    10      0.4  3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3  (against SiH.sub.4)                                                           800 ppm                                                             NH.sub.3  5                                                               2nd SiH.sub.4 300    300    15      0.4  25                                   layer                                                                             NH.sub.3  30→50*                                                   region                                                                            PH.sub.3  (against SiH.sub.4)                                                           50 ppm                                                          3rd SiH.sub.4 100    300     5      0.4  8                                    layer                                                                             H.sub.2   300                                                             region                                                                        4th SiH.sub.4 100    300     5      0.4  0.7                                  layer                                                                             NH.sub.3  80→100*                                                  region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                    500 ppm                                                     __________________________________________________________________________

                                      TABLE 259                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.3  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      NO        10                                                                  B.sub.2 H.sub.6  (against SiH.sub.4)                                                    200 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           8                                                           Upper                                                                             1st SiH.sub.4 100    250    10       0.35                                                                              3                                layer                                                                             layer                                                                             He        100                                                             region                                                                            NO        10                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                         2nd SiH.sub.4 300    250    25      0.6  25                                   layer                                                                             He        600                                                             region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                    0.3 ppm                                                         3rd SiH.sub.4 50     250    10      0.4  1                                    layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 260                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    10      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      C.sub.2 H.sub.2                                                                         1→5*                                                         B.sub.2 H.sub.6  (against SiH.sub.4)                                                    100 ppm                                                             NO        0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           10                                                                  SiF.sub.4 0.5                                                         Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                    1000 ppm                                                            C.sub.2 H.sub.2                                                                         5                                                                   AlCl.sub.3 /He                                                                          1                                                                   NO        1                                                                   Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.5                                                                 SiF.sub.4 1                                                               2nd SiH.sub.4 300    300    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6                                                                         0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             3rd SiH.sub.4 100    300    15      0.4  7                                    layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3  (against SiH.sub.4)                                                           3000 ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6  (against SiH.sub.4)                                                    0.3 ppm                                                         4th SiH.sub.4 40     300    10      0.4  0.1                                  layer                                                                             CH.sub.4  600                                                             region                                                                            AlCl.sub.3 /He                                                                          0.5                                                                 NO        0.5                                                                 SiF.sub.4 1                                                                   B.sub.2 H.sub.6  (against SiH.sub.4)                                                    1 ppm                                                               PH.sub.3  (against SiH.sub.4)                                                           3 ppm                                                               Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 261                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250     5      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10** `                                                    NO        5→10*                                                        PH.sub.3  (against SiH.sub.4)                                                           10→100 ppm*                                                  SiF.sub.4 0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           10                                                          Upper                                                                             1st SiH.sub.4 100    280    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            PH.sub.3  (against SiH.sub.4)                                                           800 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.5                                                                 NO        10                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 CH.sub.4  1                                                               2nd SiH.sub.4 100    300     3      0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                                 PH.sub.3  (against SiH.sub.4)                                                           0.3 ppm                                                             NO        0.5                                                                 CH.sub.4  1                                                                   AlCl.sub.3 /He                                                                          0.8                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.3                                                             3rd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                    50 ppm                                                              PH.sub.3  (against SiH.sub.4)                                                           0.5 ppm                                                             AlCl.sub.3 /He                                                                          0.3                                                                 NO        0.3                                                                 SiF.sub.4 0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.5 ppm                                                             AlCl.sub.3 /He                                                                          0.3                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 PH.sub.3  (against SiH.sub.4)                                                           0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 262                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     5      0.4  0.03                                     H.sub.4   10→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→10**                                                     (UL-side: 0.01 μm)                                                                   10                                                                  C.sub. H.sub.2                                                                          3→13*                                                        B.sub.2 H.sub.6  (against SiH.sub.4)                                                    100 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           8                                                                   NO        0.5                                                         Upper                                                                             1st SiH.sub.4 100    250    10      0.5  2                                layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                       region        1500 ppm                                                            C.sub.2 H.sub.2                                                                         13                                                                  H.sub.2   300                                                                 NO        1                                                               2nd SiH.sub.4 100    250    25      0.5  22                                   layer                                                                             H.sub.2   300                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6  (against SiH.sub.4)                                                    40 ppm                                                          3rd SiH.sub.4 100    250    20      0.5  5                                    layer                                                                             C.sub.2 H.sub.2                                                                         10                                                              region                                                                            H.sub.2   150                                                             4th SiH.sub.4 60     250    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         60                                                              region                                                                            H.sub.2   50                                                          __________________________________________________________________________

                                      TABLE 263                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     5      0.4  0.03                                     H.sub.2   10→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→10**                                                     (UL-side: 0.01 μm)                                                                   10                                                                  C.sub.2 H.sub.2                                                                         3→13*                                                        PH.sub.3  (against SiH.sub.4)                                                           10→100 ppm*                                                  Mg(C.sub.5 H.sub.5).sub.2 /He                                                           3                                                                   NO        0.5                                                         Upper                                                                             1st SiH.sub.4 100    250    10      0.5  2                                layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                         13                                                              region                                                                            PH.sub.3  (against SiH.sub.4)                                                           1500 ppm                                                            H.sub.2   300                                                                 NO        1                                                               2nd SiH.sub.4 100    250    25      0.5  22                                   layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            H.sub.2   300                                                             3rd SiH.sub.4 100    250    20      0.5  5                                    layer                                                                             C.sub.2 H.sub.2                                                                         10                                                              region                                                                            H.sub.2   150                                                             4th SiH.sub.4 60     250    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         60                                                              region                                                                            H.sub.2   50                                                          __________________________________________________________________________

                                      TABLE 264                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    10      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      C.sub.2 H.sub.2                                                                         1→5*                                                         B.sub.2 H.sub.6  (against SiH.sub.4)                                                    100 ppm                                                             SiF.sub.4 0.5                                                                 NO        0.5                                                                 H.sub.2 S (against SiH.sub.4)                                                           50 ppm                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                           5                                                           Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                    1000 ppm                                                            Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.5                                                                 C.sub.2 H.sub.2                                                                         5                                                                   AlCl.sub.3 /He                                                                          1                                                                   NO        1                                                                   H.sub.2 S (against SiH.sub.4)                                                           10 ppm                                                              SiF.sub.4 0.5                                                             2nd SiH.sub.4 300    300    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6  (against SiH.sub.4)                                                    0.3 ppm                                                             SiF.sub.4 0.5                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 H.sub.2 S (against SiH.sub.4)                                                           1 ppm                                                               Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             3rd SiH.sub.4 100    300    15      0.4  7                                    layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3  (against SiH.sub.4)                                                           3000 ppm                                                            NO        0.4                                                                 SiF.sub.4 0.5                                                                 AlCl.sub.3 /He                                                                          0.3                                                                 B.sub.2 H.sub.6  (against SiH.sub.4)                                                    0.3 ppm                                                             H.sub.2 S (against SiH.sub.4)                                                           1 ppm                                                               Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             4th SiH.sub.4 40     300    10      0.4  0.1                                  layer                                                                             CH.sub.4  600                                                             region                                                                            NO        0.4                                                                 PH.sub.3  (against SiH.sub.4)                                                           3 ppm                                                               B.sub.2 H.sub.6  (against SiH.sub.4)                                                    1 ppm                                                               SiF.sub.4 1                                                                   AlCl.sub.3 /He                                                                          0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.5                                                                 H.sub.2 S (against SiH.sub.4)                                                           10 ppm                                                      __________________________________________________________________________

                                      TABLE 265                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      B.sub.2 H.sub.6  (against SiH.sub.4)                                                    100 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 NO        5                                                                   SiF.sub.4 5                                                                   Mg(C.sub.5 H.sub.5).sub.2 /He                                                           10                                                          Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6  (against SiH.sub.4)                                                    800 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             2nd SiF.sub.4 0.1    300    20      0.5  5                                    layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6  (against SiH.sub.4)                                                    0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             3rd SiF.sub.4 0.5    300    15      0.4  20                                   layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6  (against SiH.sub.4)                                                    0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 1                                                                   NO        0.3                                                                 B.sub.2 H.sub.6  (against SiH.sub.4)                                                    0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 266                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                                 SiF.sub.4 0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           10                                                          Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.3                                                             2nd SiH.sub.4 300     300    20      0.5  7                                   layer                                                                             SiF.sub.4 0.1                                                             region                                                                            H.sub.2   300                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 NO        2                                                                   AlCl.sub.3 /He                                                                          0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.3                                                             3rd SiH.sub.4 100     300    15      0.4  20                                  layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SiF.sub.4 0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 1                                                                   NO        0.4                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 267                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         0.1                                                                 NO        5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             SiF.sub.4 3                                                                   Mg(C.sub.5 H.sub.5).sub.2 /He                                                           8                                                           Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                         region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 H.sub.2   150                                                                 NO        10                                                                  Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1     300    20      0.5  3                                   layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.5→2*                                                       B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             3rd SiF.sub.4 0.5     300    15      0.4  20                                  layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub. 6 (against SiH.sub.4)                                                    0.5 ppm                                                             NO        0.2                                                                 AlCl.sub.3 /He                                                                          0.3                                                                 SiF.sub.4 0.3                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 268                                   __________________________________________________________________________    Order of                  Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            Gases and their flow rates                                                                      temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250     1      0.4  0.02                                    H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         0.1                                                                 NO        10                                                                  BF.sub.3 (against SiH.sub.4)                                                            10 ppm                                                              SiF.sub.4 0.8                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           1→8*                                                 Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                         0.1                                                             region                                                                            BF.sub.3 (against SiH.sub.4)                                                            1000 ppm                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 H.sub.2   150                                                                 NO        10                                                                  Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             2nd SiH.sub.4 300     300    20      0.5  8                                   layer                                                                             C.sub.2 H.sub.2                                                                         1                                                               region                                                                            BF.sub.3 (against SiH.sub.4)                                                            10→0.3 ppm                                                                     **                                                          AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.1                                                                 H.sub.2   300                                                                 NO        0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             3rd SiH.sub.4 100     300    15      0.4  20                                  layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            BF.sub.3 (against SiH.sub.4)                                                            0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             4th SiH.sub.4 50      300    15      0.5  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            BF.sub.3 (against SiH.sub. 4)                                                           0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.4                                                                 SiF.sub.4 1                                                                   NO        0.3                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 269                                   __________________________________________________________________________    Order of                    Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                         lamination                                                                            Gases and their flow rates                                                                        temperature                                                                          power   pressure                                                                           thickness                     (layer name)                                                                          (SCCM)              (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                       __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50      250     1      0.4  0.02                                  H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30**                                                   (UL-side: 0.01 μm)                                                                     30→10**                                                    B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                           C.sub.2 H.sub.2                                                                           0.1                                                               NO          5→10*                                                      SiF.sub.4   5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                             10                                                        Upper                                                                             1st SiH.sub.4   100     300    10      0.35 3                             layer                                                                             layer                                                                             H.sub.2     150                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       2000 ppm                                                          C.sub.2 H.sub.2                                                                           0.1                                                               AlCl.sub.3 /He                                                                            0.1                                                               NO          10                                                                SiF.sub.4   0.5                                                               Mg(C.sub.5 H.sub.5).sub.2 /He                                                             0.1                                                           2nd SiH.sub.4   300     300    20      0.5  5                                 layer                                                                             H.sub.2     300                                                           region                                                                            C.sub.2 H.sub.2                                                                           0.1                                                               NO          0.1                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                           SiF.sub.4   0.1                                                               AlCl.sub.3 /He                                                                            0.1                                                               Mg(C.sub.5 H.sub.5).sub.2 /He                                                             0.1                                                           3rd SiH.sub.4   100     300    15      0.4  20                                layer                                                                             NO          0.1                                                           region                                                                            SiF.sub.4   0.5                                                               C.sub.2 H.sub.2                                                               (U · 2nd LR-side: 1 μm)                                                       0.1→15*                                                    (U · 4th LR-side: 19 μm)                                                      15                                                                AlCl.sub.3 /He                                                                            0.1                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                           Mg(C.sub.5 H.sub.5).sub.2 /He                                                             0.1                                                           4th SiH.sub.4   50      300    10      0.4  0.5                               layer                                                                             C.sub.2 H.sub.2                                                                           30                                                            region                                                                            NO          0.5                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.5 ppm                                                           SiF.sub.4   1                                                                 AlCl.sub.3 /He                                                                            0.3                                                               Mg(C.sub.5 H.sub.5).sub.2 /He                                                             0.1                                                       __________________________________________________________________________

                                      TABLE 270                                   __________________________________________________________________________    Order of                    Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                         lamination                                                                            Gases and their flow rates                                                                        temperature                                                                          power   pressure                                                                           thickness                     (layer name)                                                                          (SCCM)              (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                       __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50      250     1      0.4  0.02                                  H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30**                                                   (UL-side: 0.01 μm)                                                                     30→10**                                                    C.sub.2 H.sub.2                                                                           0.1                                                               NO          10                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                       10→100 ppm                                                                     *                                                         SiF.sub.4   1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                             5                                                         Upper                                                                             1st SiH.sub.4   100     300    10      0.35 3                             layer                                                                             layer                                                                             H.sub.2     150                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           C.sub.2 H.sub.2                                                                           0.1                                                               AlCl.sub.3 /He                                                                            0.1                                                               NO          10                                                                SiF.sub.4   0.5                                                               Mg(C.sub.5 H.sub.5).sub.2 /He                                                             0.2                                                           2nd SiF.sub.4   0.1     300    20      0.5  2                                 layer                                                                             SiH.sub.4   300                                                           region                                                                            H.sub.2     300                                                               C.sub.2 H.sub.2                                                                           0.1                                                               AlCl.sub.3 /He                                                                            0.1                                                               NO          0.1                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                           Mg(C.sub.5 H.sub.5).sub.2 /He                                                             0.1                                                           3rd SiF.sub.4   0.5     300    15      0.4  20                                layer                                                                             SiH.sub.4   100                                                           region                                                                            C.sub.2 H.sub.2                                                                           15                                                                (U · 2nd LR-side: 5 μm)                                                       0.1→13*                                                    (U · 4th LR-side)                                                                13→17*                                                     AlCl.sub.3 /He                                                                            0.1                                                               NO          0.1                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                           Mg(C.sub.5 H.sub.5).sub.2 /He                                                             0.1                                                           4th SiH.sub.4   50      300    10      0.4  0.5                               layer                                                                             C.sub.2 H.sub.2                                                                           40                                                            region                                                                            AlCl.sub.3 /He                                                                            0.1                                                               SiF.sub.4   0.5                                                               NO          0.1                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.2 ppm                                                           Mg(C.sub.5 H.sub.5).sub.2 /He                                                             0.1                                                       __________________________________________________________________________

                                      TABLE 271                                   __________________________________________________________________________    Order of                     Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                        lamination                                                                            Gases and their flow rates                                                                         temperature                                                                          power   pressure                                                                           thickness                    (layer name)                                                                          (SCCM)               (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                      __________________________________________________________________________    Lower layer                                                                           SiH.sub.4    50      250     1      0.4  0.02                                 H.sub.2      5→200*                                                    AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                       200→30**                                                  (UL-side: 0.01 μm)                                                                      30→10**                                                   NO           10                                                               C.sub.2 H.sub.2                                                                            0.1                                                              SiF.sub.4    3                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                           (S-side: 0.01 μm)                                                                       10                                                               (UL-side: 0.01 μm)                                                                      10→100**                                                  Mg(C.sub.5 H.sub.5).sub.2 /He                                                              8                                                        Upper                                                                             1st SiH.sub.4    100     300    10      0.35 3                            layer                                                                             layer                                                                             H.sub.2      150                                                          region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                        800 ppm                                                          AlCl.sub.3 /He                                                                             0.1                                                              SiF.sub.4    0.5                                                              NO           10                                                               C.sub.2 H.sub.2                                                                            0.1                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                              0.1                                                          2nd SiH.sub.4    300  300                                                                              20     0.5     5                                     layer                                                                             SiF.sub.4    0.5                                                          region                                                                            H.sub.2      300                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                        0.3 ppm                                                          C.sub.2 H.sub.2                                                                            0.1                                                              NO           0.1                                                              AlCl.sub.3 /He                                                                             0.1                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                              0.1                                                          3rd NO           0.1  300                                                                              15     0.4     20                                    layer                                                                             SiF.sub.4    0.5                                                          region                                                                            C.sub.2 H.sub.2                                                               (U · 2nd LR-side: 19 μm)                                                       15                                                               (U · 4th LR-side: 1 μm)                                                        15→30*                                                    SiH.sub.4                                                                     (U · 2nd LR-side: 19 μm)                                                       100                                                              (U ·  4th LR-side: 1 μm)                                                       100→50**                                                  AlCl.sub.3 /He                                                                             0.1                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                        0.3 ppm                                                          Mg(C.sub.5 H.sub.5).sub.2 /He                                                              0.1                                                          4th SiH.sub.4    50   300                                                                              10     0.4     0.5                                   layer                                                                             C.sub.2 H.sub.2                                                                            25                                                           region                                                                            AlCl.sub.3 /He                                                                             0.1                                                              SiF.sub.4    0.5                                                              NO           0.1                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                        0.3 ppm                                                          Mg(C.sub.5 H.sub.5).sub.2 /He                                                              0.1                                                      __________________________________________________________________________

                                      TABLE 272                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    1       0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         5                                                                   NO        0.1                                                                 SiF.sub.4 5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     50 ppm                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                           10                                                          Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                         region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 H.sub.2   150                                                                 NO        10                                                                  Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             2nd AlCl.sub.3 /He                                                                          0.1    300    20      0.5  5                                    layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             3rd SiF.sub.4 0.5    300    15      0.4  20                                   layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                              NO        0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.5 ppm                                                             NO        0.2                                                                 AlCl.sub.3 /He                                                                          0.3                                                                 SiF.sub.4 0.4                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 273                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250    1       0.4  0.02                                    H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         1→6*                                                         B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             NO        0.1                                                                 SiF.sub.4 1                                                                   Mg(C.sub.5 H.sub.5).sub.2 /He                                                           5                                                           Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                         0.1                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 H.sub.2   150                                                                 NO        10                                                                  Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             2nd SiH.sub.4 300     300    20      0.5  6                                   layer                                                                             C.sub.2 H.sub.2                                                                         0.1                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.1                                                                 H.sub.2   300                                                                 NO        0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             3rd SiH.sub.4 100     300    15      0.4  20                                  layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     12→0.3 ppm**                                                 AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 Mg(C.sub.5 H.sub.5).sub. 2 /He                                                          0.1                                                             4th SiH.sub.4 60      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          1                                                                   SiF.sub.4 0.5                                                                 NO        0.3                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 274                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    1       0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         3                                                                   NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             Si.sub.2 F.sub.6                                                                        3                                                                   Mg(C.sub.5 H.sub.5).sub.2 /He                                                           10                                                          Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  Si.sub.2 F.sub.6                                                                        0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             2nd SiH.sub.4 300    300    20      0.5  5                                    layer                                                                             H.sub.2   300                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Si.sub.2 F.sub.6                                                                        0.5                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             3rd Si.sub.2 F.sub.6                                                                        0.5    300    15      0.4  20                                   layer                                                                             NO        0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  PH.sub.3 (against SiH.sub.4)                                                            8 ppm                                                               AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.3                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.5 ppm                                                             Si.sub.2 F.sub.6                                                                        1                                                                   PH.sub.3 (against SiH.sub.4)                                                            0.1 ppm                                                             AlCl.sub.3 /He                                                                          0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 275                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250    1       0.4  0.02                                    H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         3                                                                   NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10→100 ppm*                                                  SiF.sub.4 5                                                                   Mg(C.sub.5 H.sub.5).sub.2 /He                                                           8                                                           Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             2nd SiF.sub.4 0.1     300    20      0.5  5                                   layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             3rd SiF.sub.4 0.5     300    15      0.4  20                                  layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  PH.sub.3 (against SiH.sub.4)                                                            10→0.3 ppm**                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub. 4)                                                    0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             4th SiH.sub.4 50      300    15      0.4  0.6                                 layer                                                                             C.sub.2 H.sub.2                                                                         20                                                              region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.3                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.4 ppm                                                             PH.sub.3 (against SiH.sub.4)                                                            0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 276                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    1       0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                                 SiF.sub.4 5                                                                   H.sub.2 S 1 ppm                                                               Mg(C.sub.5 H.sub.5).sub.2 /He                                                           10→1**                                               Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                                 H.sub.2 S (against SiH.sub.4)                                                           1 ppm                                                               Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             2nd SiH.sub.4 300    300    20      0.5  5                                    layer                                                                             SiF.sub.4 0.1                                                             region                                                                            H.sub.2   300                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 NO        0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 H.sub.2 S (against SiH.sub.4)                                                           1 ppm                                                               Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             3rd GeH.sub.4 1      300    15      0.4  20                                   layer                                                                             NO        0.1                                                             region                                                                            SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         15                                                                  SiH.sub.4 100                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             H.sub.2 S (against SiH.sub.4)                                                           1 ppm                                                               Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             4th SiH.sub.4 50     300    15      0.5  0.6                                  layer                                                                             C.sub.2 H.sub.2                                                                         20                                                              region                                                                            AlCl.sub.3 /He                                                                          0.2                                                                 SiF.sub.4 0.8                                                                 NO        0.4                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             H.sub.2 S (against SiH.sub.4)                                                           1 ppm                                                               Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 277                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    1       0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 NO        5                                                                   SiF.sub.4 0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           10                                                          Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                         region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 H.sub.2   150                                                                 NO        10                                                                  Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1    300    20      0.5  5                                    layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             3rd SiF.sub.4 0.5    300    15      0.4  10                                   layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             4th SiH.sub.4 60     300    15      0.5  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         40                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.4 ppm                                                             NO        0.3                                                                 AlCl.sub.3 /He                                                                          0.2                                                                 SiF.sub.4 0.6                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 278                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    1       0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         0.1                                                                 NO        10                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     150 ppm                                                             SiF.sub.4 5                                                                   Mg(C.sub.5 H.sub.5).sub.2 /He                                                           5                                                           Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                         0.1                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 H.sub.2   150                                                                 NO        10                                                                  Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             2nd SiH.sub.4 300    300    20      0.5  5                                    layer                                                                             C.sub.2 H.sub.2                                                                         0.1                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.1                                                                 H.sub.2   300                                                                 NO        0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             3rd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             4th SiH.sub.4 60     300    15      0.5  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         40                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.5 ppm                                                             AlCl.sub.3 /He                                                                          0.2                                                                 SiF.sub.4 0.5                                                                 NO        0.2                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 279                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    1       0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         2                                                                   NO        5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     30 ppm                                                              SiF.sub.4 0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           10                                                          Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             2nd SiH.sub.4 300    300    20      0.5  5                                    layer                                                                             H.sub.2   300                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             SiF.sub.4 0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             3rd SiF.sub.4 0.5    300    15      0.4  20                                   layer                                                                             NO        0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 NH.sub.3  100                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             4th SiH.sub.4 55     300    15      0.5  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.2                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.4 ppm                                                             SiF.sub.4 1                                                                   AlCl.sub.3 /He                                                                          0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 280                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    1       0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         1→3*                                                         NO        3                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             SiF.sub.4 0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           15                                                          Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.3                                                             2nd SiF.sub.4 0.1    300    20      0.5  10                                   layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             3rd SiF.sub.4 0.5    300    15      0.4  20                                   layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.4                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             N.sub.2   500                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub. 2                                                                        25                                                              region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.3                                                                 NO        0.2                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 281                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    1       0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         2                                                                   NO        5→8*                                                         B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10→100 ppm*                                                  SiF.sub.4 0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           5                                                           Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1    300    15      0.4  20                                   layer                                                                             SiF.sub.4 5                                                               region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             3rd AlCl.sub.3 /He                                                                          0.1    300    20      0.5  5                                    layer                                                                             SiF.sub.4 0.5                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub. 2 /He                                                          0.1                                                             4th SiH.sub.4 60     300    10      0.5  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         20                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.4 ppm                                                             AlCl.sub.3 /He                                                                          0.2                                                                 SiF.sub.4 1                                                                   Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                                 NO        0.3                                                         __________________________________________________________________________

                                      TABLE 282                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    1       0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         2                                                                   NO        5→8*                                                         B.sub.2 H.sub.6 (against SiH.sub.4)                                           (S-side: 0.01 μm)                                                                    50 ppm                                                              (UL-side: 0.01 μm)                                                                   50→100 ppm*                                                  SiF.sub.4 0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           5                                                           Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        10                                                                  SiF.sub.4 0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             2nd SiF.sub.4 0.5    300    15      0.4  20                                   layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             3rd SiF.sub.4 0.5    300    20      0.5  4                                    layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             4th SiH.sub.4 60     300    15      0.5  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            AlCl.sub.3 /He                                                                          0.5                                                                 SiF.sub.4 0.5                                                                 NO        0.2                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.4 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 283                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250    1       0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                              NO        5                                                                   C.sub.2 H.sub.2                                                                         0.1                                                                 SiF.sub.4 0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           20                                                          Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        5                                                                   C.sub.2 H.sub. 2                                                                        0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.3                                                             2nd SiH.sub.4 100    300    15      0.4  20                                   layer                                                                             SiF.sub.4 0.5                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  PH.sub.3 (against SiH.sub.4)                                                            8 ppm                                                               NO        0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             3rd SiH.sub.4 300    300    20      0.5  6                                    layer                                                                             SiF.sub.4 0.5                                                             region                                                                            H.sub.2   300                                                                 NO        0.1                                                                 PH.sub.3 (against SiH.sub.4)                                                            0.1 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             4th SiH.sub.4 50     300    10      0.5  0.6                                  layer                                                                             C.sub.2 H.sub.2                                                                         20                                                              region                                                                            AlCl.sub.3 /He                                                                          0.2                                                                 SiF.sub. 4                                                                              0.5                                                                 NO        0.2                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                                 PH.sub.3 (against SiH.sub.4)                                                            0.1 ppm                                                     __________________________________________________________________________

                                      TABLE 284                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50      250    1       0.4  0.02                                    H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             C.sub.2 H.sub.2                                                                         10                                                                  NO        0.1                                                                 SiF.sub.4 0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           15                                                          Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                         region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 C.sub. 2 H.sub.2                                                                        0.1                                                                 H.sub.2   150                                                                 NO        10                                                                  Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             2nd AlCl.sub.3 /He                                                                          0.1     300    15      0.4  20                                  layer                                                                             SiF.sub.4 0.5                                                             region                                                                            SiH.sub.4 100                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     12→0.3 ppm**                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             3rd SiF.sub.4 0.5     300    20      0.5  3                                   layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             NO        0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                             4th SiH.sub.4 50      300    15      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.2 ppm                                                             NO        0.3                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.4                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.1                                                         __________________________________________________________________________

                                      TABLE 285                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250     1      0.01 0.05                                      H.sub.2   5→100 *                                                      Ar        200                                                         Upper                                                                             1st SiH.sub.4 100   250    10      0.35 3                                 layer                                                                             layer                                                                             He        600                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             NO        10                                                              2nd SiH.sub.4 300   250    25      0.6  25                                    layer                                                                             He        100                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                         3rd SiH.sub.4 50    250    10      0.4  1                                     layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 286                                   __________________________________________________________________________    Order of                                                                              Gasses and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     5      0.4  0.05                                   H.sub.2     10→200 *                                                   AlCl.sub.3 /He                                                                            120→40 **                                                  Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             5                                                         Upper                                                                             1st SiH.sub.4   100    250    10      0.4  3                              layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                       region                                                                            H.sub.2     100                                                               NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0 **                                                2nd SiH.sub.4   300    250    15      0.5  20                                 layer                                                                             H.sub.2     300                                                           region                                                                        3rd SiH.sub.4   50     250    10      0.4  0.5                                layer                                                                             CH.sub.4    500                                                           region                                                                    __________________________________________________________________________

                                      TABLE 287                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     5      0.4  0.05                                   AlCl.sub.3 /He                                                                            120→40 **                                          Upper                                                                             1st SiH.sub.4   100    250    10      0.4  3                              layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                       region                                                                            NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0 **                                                    H.sub.2     100                                                           2nd SiH.sub.4   300    250    15      0.5  20                                 layer                                                                             H.sub.2     500                                                           region                                                                        3rd SiH.sub.4   50     250    10      0.4  0.5                                layer                                                                             CH.sub.4    500                                                           region                                                                    __________________________________________________________________________

                                      TABLE 288                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     5      0.4  0.03                                   H.sub.2     10→200 *                                                   AlCl.sub.3 /He                                                                            120→40 **                                                  (S-side: 0.01 μm)                                                                      100→10 **                                                  (UL-side: 0.02 μm)                                                                     10                                                                Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             10                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                           NO          5                                                         Upper                                                                             1st SiH.sub.4   100    250    10      0.4  3                              layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                       region                                                                            NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0 **                                                    H.sub.2     100                                                           2nd SiH.sub.4   300    250    15      0.5  20                                 layer                                                                             H.sub.2     300                                                           region                                                                        3rd SiH.sub.4   50     250    10      0.4  0.5                                layer                                                                             CH.sub.4    500                                                           region                                                                    __________________________________________________________________________

                                      TABLE 289                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    150    0.5     0.3  0.02                                      H.sub.2   5→200 *                                                                      ↓                                                                             ↓                                               AlCl.sub.3 /He  300    1.5                                                    (S-side: 0.01 μm)                                                                    200→30 **                                                    (UL-side: 0.01 μm)                                                                   30→10 **                                                     GeH.sub.4 5                                                                   Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           5→3 **                                                       Mg(C.sub.5 H.sub.5).sub.2 /He                                                           2                                                           Upper                                                                             1st SiH.sub.4 100   250    10      0.4  3                                 layer                                                                             layer                                                                             H.sub.2   100                                                             region                                                                            NO        10                                                              2nd SiH.sub.4 300   250    20      0.5  20                                    layer                                                                             H.sub.2   500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 290                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     1      0.3  0.02                                   H.sub.2     5→200 *                                                    AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30 **                                                  (UL-side: 0.01 μm)                                                                     30→10 **                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                           Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             6                                                                 SiF.sub.4   3                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                             5                                                                 NO          8                                                                 CH.sub.4    1                                                         Upper                                                                             1st SiH.sub.4   100    250    10      0.3  0.02                           layer                                                                             layer                                                                             He          300                                                           region                                                                            CH.sub.4    1                                                                 NO          5                                                                 B.sub.2 H.sub. 6 (against SiH.sub.4)                                                      1500 ppm                                                          Mg(C.sub.5 H.sub.5).sub.2 /He                                                             0.4                                                               SiF.sub.4   0.5                                                               Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             0.4                                                               AlCl.sub.3 /He                                                                            0.3                                                           2nd SiH.sub.4   300    250    25      0.6  25                                 layer                                                                             He          600                                                           region                                                                            Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             0.1                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.1 ppm                                                           Mg(C.sub.5 H.sub.5).sub.2 /He                                                             0.2                                                               SiF.sub.4   0.1                                                               NO          0.1                                                               CH.sub.4    1                                                                 AlCl.sub.3 /He                                                                            0.1                                                           3rd SiH.sub.4   50     250    10      0.4  1                                  layer                                                                             CH.sub.4    500                                                           region                                                                            Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             1                                                                 N.sub.2     1                                                                 B.sub.2 H.sub.6 (against SiH.sub. 4)                                                      1 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                             1                                                                 SiF.sub.4   2                                                                 AlCl.sub.3 /He                                                                            1                                                                 N.sub.2     0.5                                                       __________________________________________________________________________

                                      TABLE 291                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temprature                                                                           power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   10→100 *                                                                      250    10      0.4  0.2                                    SiF.sub.4   10                                                                H.sub.2     5→200 *                                                    AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                      200→40 **                                                  (UL-side: 0.15 μm)                                                                     40→10 **                                                   GeH.sub.4   1→5 *                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                           Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             20                                                        Upper                                                                             1st SiH.sub.4   100    250    10      0.4  3                              layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                       region                                                                            NO                                                                            (LL-side: 2 μm)                                                                        5                                                                 (U · 2nd LR-side: 1 μm)                                                       5→0 **                                                     SiF.sub.4   10                                                            2nd SiH.sub.4   400    250    10      0.5  15                                 layer                                                                             Ar          200                                                           region                                                                            SiF.sub.4   40                                                            3rd SiH.sub.4   100    250     5      0.4  0.3                                layer                                                                             NH.sub.3    30                                                            region                                                                            SiF.sub.4   10                                                        __________________________________________________________________________

                                      TABLE 292                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/Cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   10→100 *                                                                      300    10      0.4  0.2                                    Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             1→10 *                                                     CH.sub.4    2→25 *                                                     H.sub.2     5→200 *                                                    AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                      200→40 **                                                  (UL-side: 0.15 μm)                                                                     40→10 **                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                       10 ppm                                                    Upper                                                                             1st SiH.sub.4   100    300    10      0.4  3                              layer                                                                             layer                                                                             CH.sub.4    20                                                            region                                                                            B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                       1000 ppm                                                          H.sub.2     100                                                           2nd SiH.sub.4   300    300    20      0.5  20                                 layer                                                                             H.sub.2     500                                                           region                                                                        3rd SiH.sub.4   100    300    15      0.4  7                                  layer                                                                             CH.sub.4    600                                                           region                                                                            PH.sub.3 (against SiH.sub.4)                                                              3000 ppm                                                      4th SiH.sub.4   40     300    10      0.4  0.1                                layer                                                                             CH.sub.4    600                                                           region                                                                    __________________________________________________________________________

                                      TABLE 293                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     330     5      0.4  0.05                                     Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           10                                                                  H.sub.2   5→200 *                                                      AlCl.sub.3 /He                                                                          200→20 **                                                    Mg(C.sub.5 H.sub.5).sub.2 /He                                                           3                                                           Upper                                                                             1st SiH.sub.4 100    330    10      0.4  3                                layer                                                                             layer                                                                             CH.sub.4  20                                                              region                                                                            PH.sub.3 (against SiH.sub.4)                                                            800 ppm                                                             H.sub.2   300                                                             2nd SiH.sub.4 400    330    25      0.5  25                                   layer                                                                             SiF.sub.4 10                                                              region                                                                            H.sub.2   800                                                             3rd SiH.sub.4 100    350    15      0.4  5                                    layer                                                                             CH.sub.4  400                                                             region                                                                            B.sub. 2 H.sub.6                                                              (against SiH.sub.4)                                                                     5000 ppm                                                        4th SiH.sub.4 20     350    10      0.4  1                                    layer                                                                             CH.sub.4  400                                                             region                                                                            B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                     8000 ppm                                                    __________________________________________________________________________

                                      TABLE 294                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     300     1      0.3  0.02                                     H.sub.2   5→200 *                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30 **                                                    (UL-side: 0.01 μm)                                                                   30→10 **                                                     Mg(C.sub.5 H.sub.5).sub.2 /He                                                           2                                                                   Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           30                                                          Upper                                                                             1st SiH.sub.4 100    300    10      0.4  3                                layer                                                                             layer                                                                             B.sub.2 H.sub.6                                                           region                                                                            (against SiH.sub.4)                                                                     1000 ppm                                                            CH.sub.4  20                                                                  H.sub.2   100                                                             2nd SiH.sub.4 300    300    20      0.5  20                                   layer                                                                             H.sub.2   200                                                             region                                                                        3rd SiH.sub.4 50     300    20      0.4  5                                    layer                                                                             N.sub.2   500                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                        4th SiH.sub.4 40     300    10      0.4  0.3                                  layer                                                                             CH.sub.4  600                                                             region                                                                    __________________________________________________________________________

                                      TABLE 295                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     5      0.4  0.05                                     CH.sub.4  10                                                                  H.sub.2   5→200 *                                                      AlCl.sub.3 /He                                                                          200→20 **                                                    B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                     100 ppm                                                             Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           5                                                           Upper                                                                             1st SiH.sub.4 100    250    15      0.4  3                                layer                                                                             layer                                                                             NO        10                                                              region                                                                            B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                     800 ppm                                                             H.sub.2   100                                                             2nd SiH.sub.4 300    250    15      0.5  10                                   layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 200    250    15      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         10→ 20 *                                                 region                                                                            NO        1                                                           __________________________________________________________________________

                                      TABLE 296                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     1      0.4  0.02                                   H.sub.2     5→200 *                                                    AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30 **                                                  (UL-side: 0.01 μm)                                                                     30→10 **                                                               1→10 *                                                     Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                             10                                                                PH.sub.3 (against SiH.sub.4)                                                              100 ppm                                                   Upper                                                                             1st SiH.sub.4   100    250    10      0.4  3                              layer                                                                             layer                                                                             CH.sub.4                                                                  region                                                                            (LL-side: 2 μm)                                                                        20                                                                (U · 2nd LR-side: 1 μm)                                                       20→0 **                                                    PH.sub.3 (against SiH.sub.4)                                                              800 ppm                                                           H.sub.2     100                                                               SiF.sub.4   5                                                             2nd SiH.sub.4   300    300    20      0.5  5                                  layer                                                                             H.sub.2     300                                                           region                                                                            SiF.sub.4   20                                                            3rd SiH.sub.4   100    300    15      0.4  20                                 layer                                                                             CH.sub.4    100                                                           region                                                                            SiF.sub.4   5                                                             4th SiH.sub.4   50     300    10      0.4  0.5                                layer                                                                             CH.sub.4    600                                                           region                                                                            SiF.sub.4   5                                                         __________________________________________________________________________

                                      TABLE 297                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   10→100 *                                                                      300     5      0.4  0.2                                    Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             1→10 *                                                     H.sub.2     5→200 *                                                    AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                      200→40 **                                                  (UL-side: 0.15 μm)                                                                     40→10 **                                           Upper                                                                             1st SiH.sub.4   100    250    10      0.4  3                              layer                                                                             layer                                                                             B.sub.2 H.sub.6                                                           region                                                                            (against SiH.sub.4)                                                                       800 ppm                                                           NO                                                                            (LL-side: 2 μm)                                                                        5                                                                 (U · 2nd LR-side: 1 μm)                                                       5→0 **                                                     H.sub.2     100                                                           2nd SiH.sub.4   100    300     5      0.2  8                                  layer                                                                             H.sub.2     300                                                           region                                                                        3rd SiH.sub.4   300    300    15      0.4  25                                 layer                                                                             NH.sub.3    50                                                            region                                                                        4th SiH.sub.4   100    300    10      0.4  0.3                                layer                                                                             NH.sub.4    50                                                            region                                                                    __________________________________________________________________________

                                      TABLE 298                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100 *                                                                      250     5      0.4  0.2                                      CH.sub.4  2→20 *                                                       H.sub.2   5→200 *                                                      AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40 **                                                    (UL-side: 0.15 μm)                                                                   40→10 **                                                     Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                      Upper                                                                             1st SiH.sub.4 100    250    10      0.4  3                                layer                                                                             layer                                                                             CH.sub.4  20                                                              region                                                                            B.sub.2 H.sub.6                                                               (against SiH.sub.4)                                                                     1000 ppm                                                            H.sub.2   100                                                             2nd SiH.sub.4 100    300     3      0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                             3rd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                          4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                            SiF.sub.4 5                                                           __________________________________________________________________________

                                      TABLE 299                                   __________________________________________________________________________    Order of                                                                              Gases and           Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                         lamination                                                                            their flow rates    temperature                                                                          power   pressure                                                                           thickness                     (layer name)                                                                          (SCCM)              (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                       __________________________________________________________________________    Lower layer                                                                           Cu(C.sub.4 H.sub.7 N.sub.1 O.sub.2).sub.2 /He                                                     250     5      0.4  0.05                                              3→1 **                                                     SiH.sub.4   50                                                                C.sub.2 H.sub.2                                                                           5                                                                 H.sub.2     5→200 *                                                    AlCl.sub.3 /He                                                                            200→20 **                                                  PH.sub.3 (against SiH.sub.4)                                                              10 ppm                                                    Upper                                                                             1st SiH.sub.4   100     250    10      0.4  3                             layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                           10                                                            region                                                                            PH.sub.3 (against SiH.sub.4)                                                              800 ppm                                                           H.sub.2     300                                                           2nd Si.sub.2 H.sub.4                                                                          200     300    10      0.5  10                                layer                                                                             H.sub.2     200                                                           region                                                                            Si.sub.2 H.sub. 6                                                                         10                                                            3rd SiH.sub.4   300     330    20      0.4  30                                layer                                                                             C.sub.2 H.sub.2                                                                           50                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                           (U · 2nd LR-side: 1 μm)                                                       800→100 ppm**                                              (U · 4th LR-side: 29 μm)                                                      100 ppm                                                       4th SiH.sub.4   200     330    10      0.4  1                                 layer                                                                             C.sub.2 H.sub.2                                                                           200                                                           region                                                                    __________________________________________________________________________

                                      TABLE 300                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   10→100 *                                                                      250     5      0.4  0.2                                    NO          1→10 *                                                     Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             1→5 *                                                      H.sub.2     5→200 *                                                    AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                      200→40 **                                                  (UL-side: 0.15 μm)                                                                     40→10 **                                                   Si.sub.2 F.sub.6                                                                          1                                                         Upper                                                                             1st SiH.sub.4   100    250    10      0.4  3                              layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                       region                                                                            NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0 **                                                    H.sub.2     100                                                               Si.sub.2 F.sub.6                                                                          10                                                            2nd SiH.sub.4   100    300     5      0.2  8                                  layer                                                                             H.sub.2     300                                                           region                                                                            Si.sub.2 F.sub.6                                                                          10                                                            3rd SiH.sub.4   300    300    15      0.4  25                                 layer                                                                             NH.sub.3    30→50 *                                                region                                                                            PF.sub.3 (against SiH.sub.4)                                                              50 ppm                                                            Si.sub.2 F.sub.6                                                                          30                                                            4th SiH.sub.4   100    300     5      0.4  0.7                                layer                                                                             NH.sub.3    80→100 *                                               region                                                                            PF.sub.3 (against SiH.sub.4)                                                              500 ppm                                                           Si.sub.2 F.sub.6                                                                          10                                                        __________________________________________________________________________

                                      TABLE 301                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200 *                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30 **                                                    (UL-side: 0.01 μm)                                                                   30→10 **                                                     Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           20                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                     Upper                                                                             1st SiH.sub.4 100    300    10      0.4  3                                layer                                                                             layer                                                                             CH.sub.4  20                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            H.sub.2   100                                                             2nd SiH.sub.4 300    300    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                        3rd SiH.sub.4 100    300     5      0.4  1                                    layer                                                                             GeH.sub.4 10→50 *                                                  region                                                                            H.sub.2   300                                                             3rd SiH.sub.4 100→40 **                                                                     300    10      0.4  1                                    layer                                                                             CH.sub.4  100→600 *                                                region                                                                    __________________________________________________________________________

                                      TABLE 302                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             25     300     1      0.3  0.02                                   SiH.sub.4   50 *                                                              H.sub.2     5→200 *                                                    AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30 **                                                  (UL-side: 0.01 μm)                                                                     30→10 **                                                   NO          5                                                                 B.sub.2 H.sub.6 (againt SiH.sub.4)                                                        50 ppm                                                    Upper                                                                             1st SiH.sub.4   85     300    10      0.4  3                              layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                       region                                                                            NO          10                                                                (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0 **                                                    H.sub.2     100                                                           2nd SiH.sub.4   300    300    15      0.5  20                                 layer                                                                             H.sub.2     400                                                           region                                                                        3rd SiH.sub.4   50     300    10      0.4  0.5                                layer                                                                             CH.sub.4    500                                                           region                                                                    __________________________________________________________________________

                                      TABLE 303                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     300    0.7     0.3  0.02                                   Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             2                                                                 H.sub.2     5→200 *                                                    AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30 **                                                  (UL-side: 0.01 μm)                                                                     30→10 **                                                   NO          4                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                       50 ppm                                                    Upper                                                                             1st SiH.sub.4   80     300    10      0.4  3                              layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                       region                                                                            NO                                                                            (LL-side: 2 μm)                                                                        8                                                                 (U · 2nd LR-side: 1 μm)                                                       8→0 **                                                     H.sub.2     80                                                            2nd SiH.sub. 4  200    300    12      0.4  20                                 layer                                                                             H.sub.2     400                                                           region                                                                        3rd SiH.sub.4   40     300    7       0.3  0.5                                layer                                                                             CH.sub.4    400                                                           region                                                                    __________________________________________________________________________

                                      TABLE 304                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   25     300    0.5     0.2  0.02                                   Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             15                                                                H.sub.2     5→100*                                                     AlCl.sub.3 /He                                                                (S-side:0.01 μm)                                                                       100→15**                                                   (UL-side:0.01 μm)                                                                      15→5**                                                     NO          3                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                       50 ppm                                                    Upper                                                                             1st SiH.sub.4   60     300    10      0.4  3                              layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                       region                                                                            NO                                                                            (LL-side:2 μm)                                                                         6                                                                 (U · 2nd LR-side:1 μm)                                                        6→0**                                                      H.sub.2     80                                                            2nd SiH.sub.4   150                                                           layer                                                                             H.sub.2     300                                                           region                                                                        3rd SiH.sub.4   30     300    5       0.3  0.5                                layer                                                                             CH.sub.4    300                                                           region                                                                    __________________________________________________________________________

                                      TABLE 305                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   20    300    0.3     0.2  0.02                                    H.sub.2     5→100*                                                     AlCl.sub.3 /He                                                                (S-side:0.01 μm)                                                                       80→15**                                                    (UL-side:0.01 μm)                                                                      15→5**                                                     Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             10                                                                NO          2                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                       50 ppm                                                    Upper                                                                             1st SiH.sub.4   40    300    10      0.4  3                               layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                       region                                                                            NO                                                                            (LL-side:2 μm)                                                                         4                                                                 (U · 2nd LR-side: 1 μm)                                                       4→0**                                                      H.sub.2     80                                                            2nd SiH.sub.4   100   300    6       0.3  20                                  layer                                                                             H.sub.2     300                                                           region                                                                        3rd SiH.sub.4   20    300    3       0.2  0.5                                 layer                                                                             CH.sub.4    200                                                           region                                                                    __________________________________________________________________________

                                      TABLE 306                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     500     5      0.4  0.05                                     C.sub.2 H.sub.2                                                                         5                                                                   H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                                     Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           20                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                      Upper                                                                             1st SiH.sub.4 100    500    30      0.4  3                                layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             H.sub.2   500                                                             2nd SiH.sub.4 300    500    30      0.5  10                                   layer                                                                             H.sub.2   1500                                                            region                                                                        3rd SiH.sub.4 200    500    30      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         10→20*                                                   region                                                                            NO        1                                                           __________________________________________________________________________

                                      TABLE 307                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            μW    Inner                                                                              Layer                           lamination                                                                            their flow rates temperature                                                                          discharging                                                                            pressure                                                                           thickness                       (layer name)                                                                          (SCCM)           (°C.                                                                          power (mW/cm.sup.3)                                                                    (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 150    250    0.5      0.6  0.02                                    Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           10                                                                  SiF.sub.4 10                                                                  H.sub.2   20→500*                                                      AlCl.sub.3 /He                                                                (S-side:0.01 μm)                                                                     400→80**                                                     (UL-side:0.01 μm)                                                                    80→50**                                                      NO        10                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                     Upper                                                                             1st SiH.sub.4 500    250    0.5      0.4  3                               layer                                                                             layer                                                                             SiF.sub.4 20                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            H.sub.2   303                                                                 NO        13                                                              2nd SiH.sub.4 700    250    0.5      0.5  20                                  layer                                                                             SiF.sub.4 30                                                              region                                                                            H.sub.2   500                                                             3rd SiH.sub.4 150    250    0.5      0.3  1                                   layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 308                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     5      0.4  0.05                                     C.sub.2 H.sub.2                                                                         10                                                                  H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                                     Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           10                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                     Upper                                                                             1st SiH.sub.4 100    250    15      0.4  3                                layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                         10                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             H.sub.2   300                                                             2nd SiH.sub.4 200    250    15      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         10→20*                                                   region                                                                            NO        1                                                               3rd SiH.sub.4 300    250    15      0.5  10                                   layer                                                                             H.sub.2   300                                                             region                                                                    __________________________________________________________________________

                                      TABLE 309                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     1      0.4  0.02                                   Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 He                                              10                                                                H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side:0.01 μm)                                                                       200→30**                                                   (UL-side:0.01 μm)                                                                      30→10**                                                    SiF.sub.4   10                                                                CH.sub.4    10                                                                PH.sub.3 (against SiH.sub.4)                                                              100 ppm                                                   Upper                                                                             1st SiH.sub.4   100    250    10      0.4  3                              layer                                                                             layer                                                                             CH.sub.4                                                                  region                                                                            (LL-side:2 μm)                                                                         20                                                                (U · 2nd LR-side:1 μm)                                                        20→0**                                                     PH.sub.3 (against SiH.sub.4)                                                              800 ppm                                                           H.sub.2     100                                                               SiF.sub.4   10                                                            2nd SiH.sub. 4  100    300    15      0.4  20                                 layer                                                                             CH.sub.4    100                                                           region                                                                            SiF.sub.4   10                                                            3rd SiH.sub.4   300    300    20      0.5  5                                  layer                                                                             H.sub.2     300                                                           region                                                                            SiF.sub.4   20                                                            4th SiH.sub.4   50     300    10      0.4  0.5                                layer                                                                             CH.sub.4    600                                                           region                                                                            SiF.sub.4   5                                                         __________________________________________________________________________

                                      TABLE 310                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He)                                                   300     5      0.4  0.2                                                5→10*                                                      SiH.sub.4   10→100*                                                    SnH.sub.4   1→10*                                                      NO          1→10*                                                      H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side:0.05 μm)                                                                       200→40**                                                   (UL-side:0.15 μm)                                                                      40→10**                                                    Mg(C.sub.5 H.sub.5).sub.2 /He                                                             8                                                         Upper                                                                             1st SiH.sub.4   100    300    10      0.4  3                              layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                       region                                                                            NO                                                                            (LL-side:2 μm)                                                                         5                                                                 (U · 2nd LR-side:1 μm)                                                        5→0**                                                      H.sub.2     100                                                           2nd SiH.sub.4   300    300    15      0.4  25                                 layer                                                                             NH.sub.2    50                                                            region                                                                        3rd SiH.sub.4   100    300     5      0.2  8                                  layer                                                                             H.sub.2     300                                                           region                                                                        4th SiH.sub.4   100    300    10      0.4  0.3                                layer                                                                             NH.sub.3    50                                                            region                                                                    __________________________________________________________________________

                                      TABLE 311                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       250     5      0.4  0.2                                      Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           1→10*                                                        CH.sub.4  2→20*                                                        H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side:0.05 μm)                                                                     200→40**                                                     (UL-side:0.15 μm)                                                                    40→10**                                                      PH.sub.3 (against SiH.sub.4)                                                            10 ppm                                                      Upper                                                                             1st SiH.sub.4 100    250    10      0.4  3                                layer                                                                             layer                                                                             CH.sub.4  20                                                              region                                                                            PH.sub.3 (against SiH.sub.4)                                                            1000 ppm                                                            H.sub.2   100                                                                 SiF.sub.4 10                                                              2nd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                              SiF.sub.4 10                                                              3rd SiH.sub.4 100    300     3      0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                            SiF.sub.4 5                                                           __________________________________________________________________________

                                      TABLE 312                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     5      0.4  0.05                                   Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             10→3**                                                     C.sub.2 H.sub.2                                                                           5                                                                 H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                            200→20**                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                       10 ppm                                                    Upper                                                                             1st SiH.sub.4   100    250    10      0.4  3                              layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                           10                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           H.sub.2     300                                                           2nd SiH.sub.4   300    330    20      0.4  30                                 layer                                                                             Cphd 2 H.sub.2                                                                            50                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                           (U · 1st LR-side:1 μm)                                                        0→100 ppm*                                                 (U · 3rd LR-side:29 μm)                                                       100 ppm                                                       3rd Si.sub.2 H.sub.6                                                                          200    300    10      0.5  10                                 layer                                                                             H.sub.2     200                                                           region                                                                        4th SiH.sub.4   200    330    10      0.4  1                                  layer                                                                             C.sub.2 H.sub.2                                                                           200                                                           region                                                                    __________________________________________________________________________

                                      TABLE 313                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   10→100*                                                                       250    5       0.4  0.2                                    NO          1→10*                                                      H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side:0.05 μm)                                                                       200→40**                                                   (UL-side:0.15 μm)                                                                      40→10**                                                    Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             20→5**                                             Upper                                                                             1st SiH.sub.4   100    250    10      0.4  3                              layer                                                                             layer                                                                             PH.sub.3 (against SiH.sub.4)                                                              800 ppm                                                       region                                                                            NO                                                                            (LL-side:2 μm)                                                                         10                                                                (U · 2nd LR-side:1 μm)                                                        10→0**                                                     H.sub.2     100                                                           2nd SiH.sub.4   300    300    15      0.4  25                                 layer                                                                             NH.sub.3    30→50*                                                 region                                                                            PH.sub.3 (against SiH.sub.4)                                                              50 ppm                                                    3rd SiH.sub.4                                                                         100         300    5      0.2     8                                       layer                                                                             H.sub.2     300                                                           region                                                                        4th SiH.sub.4   100    300    5       0.4  0.7                                layer                                                                             NH.sub.3    80→100*                                                region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       500 ppm                                                   __________________________________________________________________________

                                      TABLE 314                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.3  0.02                                     H.sub.2   5→200                                                        AlCl.sub.3 /He                                                                (S-side:0.01 μm)                                                                     200→30**                                                     (UL-side:0.01 μm)                                                                    30→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             NO        1                                                                   Mg (C.sub.2 H.sub.5).sub.2 /He                                                          5                                                                   Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          1                                                           Upper                                                                             1st SiH.sub.4 100    250    10      0.4  3                                layer                                                                             layer                                                                             He        300                                                             region                                                                            NO        5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1500 ppm                                                        2nd SiH.sub.4 300    250    25      0.6  25                                   layer                                                                             He        600                                                             region                                                                        3rd SiH.sub.4 50     250    10      0.4  1                                    layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 315                                   __________________________________________________________________________    Order of   Gases and     Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination their flow rates                                                                            temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                             (SCCM)        (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    10      0.4  0.2                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side:0.05 μm)                                                                     200→40**                                                     (UL-side:0.15 μm)                                                                    40→10**                                                      CH.sub.4  5→25*                                                        SiF.sub.4 1                                                                   NO        0.5                                                                 Cu (C.sub.4 H.sub.7 .sub.2 O.sub.2).sub.2 /He                                           10→0.5**                                                     B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                      Upper                                                                             1st SiH.sub.4 100    300    10      0.4  3                                layer                                                                             layer                                                                             CH.sub.4  20                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            H.sub.2   100                                                                 SiF.sub.4 1                                                                   Cu (C.sub.4 H.sub.7 N.sub. 2 O.sub.2).sub.2 /He                                         0.5                                                                 AlCl.sub.3 /He                                                                          0.4                                                                 NO        0.5                                                             2nd SiH.sub.4 300    300    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             CH.sub.4  1                                                                   NO        0.1                                                                 Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.1                                                                 SiF.sub.4 0.2                                                                 AlCl.sub.3 /He                                                                          0.1                                                             3rd SiH.sub.4 100    300    15      0.4  7                                    layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.1                                                                 SiF.sub.4 0.3                                                                 AlCl.sub.3 /He                                                                          0.2                                                                 NO        0.2                                                             4th SiH.sub.4 40     300    10      0.4  0.1                                  layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            2 ppm                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1 ppm                                                               Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          1                                                                   SiF.sub.4 1                                                                   AlCl.sub.3 /He                                                                          1                                                                   NO        0.5                                                         __________________________________________________________________________

                                      TABLE 316                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→200*                                                                       250     5      0.4  0.2                                      CH.sub.4  2→20*                                                        H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side:0.05 μm)                                                                     200→40**                                                     (UL-side:0.15 μm)                                                                    40→10**                                                      SiF.sub.4 10                                                                  Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          5                                                                   NO        0.5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                      Upper                                                                             1st SiH.sub.4 100    250    10      0.4  3                                layer                                                                             layer                                                                             CH.sub.4  20                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            H.sub.2   100                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.5                                                                 SiF.sub.4 10                                                                  AlCl.sub.3 /He                                                                          0.4                                                                 NO        0.5                                                             2nd SiH.sub.4 100    300     3      0.5  3                                    layer                                                                             SiF.sub.4 5                                                               region                                                                            H.sub.2   200                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.3                                                                 CH.sub.4  1                                                                   AlCl.sub.3 /He                                                                          0.6                                                                 NO        0.5                                                             3rd SiH.sub.4 100    300    15      0.4  30                                   layer                                                                             CH.sub.4  100                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            50 ppm                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.1                                                                 SiF.sub.4 5                                                                   AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                             4th SiH.sub. 4                                                                              50     300    10      0.4  0.5                                  layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            1 ppm                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1 ppm                                                               Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.5                                                                 SiF.sub.4 3                                                                   AlCl.sub.3 /He                                                                          1                                                                   NO        0.5                                                         __________________________________________________________________________

                                      TABLE 317                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     5      0.4  0.05                                   NO          5                                                                 H.sub.2     10→200*                                                    AlCl.sub.3 /He                                                                            120→40**                                                   Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            5                                                         Upper                                                                             1st SiH.sub.4   100    250    10      0.5  3                              layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                           10                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       1500 ppm                                                          NO                                                                            (LL-side:2 μm)                                                                         3                                                                 (U · 2nd LR-side:1 μm)                                                        3→0**                                                      H.sub.2     300                                                           2nd SiH.sub.4   100    250    15      0.5  25                                 layer                                                                             C.sub.2 H.sub.2                                                                           10                                                            region                                                                            H.sub.2     300                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       50 ppm                                                        3rd SiH.sub.4   60     250    10      0.4  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                           60                                                            region                                                                            H.sub.2     50                                                        __________________________________________________________________________

                                      TABLE 318                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50     250     1      0.3  0.02                                   H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side:0.01 μm)                                                                       200→30**                                                   (UL-side:0.01 μm)                                                                      30→10**                                                    Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            5→1**                                                      NO          5                                                                 C.sub.2 H.sub.2                                                                           5                                                                 PH.sub.3    10 ppm                                                    Upper                                                                             1st SiH.sub.4   100    250    10      0.5  3                              layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                           10                                                            region                                                                            PH.sub.3 (against SiH.sub.4)                                                              1500 ppm                                                          NO                                                                            (LL-side:2 μm)                                                                         3                                                                 (U · 2nd LR-side:1 μm)                                                        3→0**                                                      H.sub.2     300                                                           2nd SiH.sub.4   100    250    15      0.5  20                                 layer                                                                             C.sub.2 H.sub.2                                                                           15                                                            region                                                                            H.sub.2     300                                                               PH.sub.3 (against SiH.sub.4)                                                              40 ppm                                                        3rd SiH.sub.4   100    250    15      0.5  3                                  layer                                                                             C.sub.2 H.sub.2                                                                           10                                                            region                                                                            H.sub.2     150                                                           4th SiH.sub.4   60     250    10      0.4  0.5                                layer                                                                             C.sub.2 H.sub.2                                                                           60                                                            region                                                                            H.sub.2     50                                                        __________________________________________________________________________

                                      TABLE 319                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                       300    10      0.4  0.2                                      CH.sub.4  2→25*                                                        H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side:0.05 μm)                                                                     200→40**                                                     (UL-side:0.15 μm)                                                                    40→10**                                                      Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          5                                                                   NO        0.5                                                                 SiF.sub.4 0.5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             H.sub.2 S (against SiH.sub.4)                                                           0.6 ppm                                                     Upper                                                                             1st SiH.sub.4 100    300    10      0.4  3                                layer                                                                             layer                                                                             CH.sub.4  20                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1000 ppm                                                            H.sub.2   100                                                                 SiF.sub.4 0.5                                                                 Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.5                                                                 AlCl.sub.3 /He                                                                          0.4                                                                 NO        0.4                                                                 H.sub.2 S (against SiH.sub.4)                                                           0.5 ppm                                                         2nd SiH.sub.4 300    300    20      0.5  20                                   layer                                                                             H.sub.2   500                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             CH.sub.4  1                                                                   Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.1                                                                 SiF.sub.4 0.3                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.2                                                                 H.sub.2 S (against SiH.sub.4)                                                           0.3 ppm                                                         3rd SiH.sub.4 100    300    15      0.4  7                                    layer                                                                             CH.sub.4  600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            3000 ppm                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.2 ppm                                                             Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.2                                                                 SiF.sub.4 0.3                                                                 AlCl.sub.3 /He                                                                          0.2                                                                 NO        0.1                                                             4th SiH.sub.4 40     300    10      0.4  0.1                                  layer                                                                             C.sub.4   600                                                             region                                                                            PH.sub.3 (against SiH.sub.4)                                                            1.5 ppm                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1 ppm                                                               Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          1                                                                   SiF.sub.4 5                                                                   NO        1                                                                   AlCl.sub.3 /He                                                                          1                                                                   H.sub.2 S (against SiH.sub.4)                                                           1 ppm                                                       __________________________________________________________________________

                                      TABLE 320                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side:0.01 μm)                                                                     200→30**                                                     (UL-side:0.01 μm)                                                                    30→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             C.sub.2 H.sub.2                                                                         1                                                                   NO        5                                                                   SiF.sub.4 1                                                                   Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          5                                                           Upper                                                                             1st SiH.sub.4 100    300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.4                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.5                                                             2nd SiH.sub.4 300    300    20      0.5  5                                    layer                                                                             H.sub.2   300                                                             region                                                                            C.sub.2 H.sub.2                                                                         0.1                                                                 Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.2 ppm                                                             AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.3                                                                 NO        0.1                                                             3rd SiH.sub.4 100    300    15      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             AlCl.sub.3 /He                                                                          0.2                                                                 SiF.sub.4 0.5                                                                 NO        0.2                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          1                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1 ppm                                                               AlCl.sub.3 /He                                                                          1                                                                   SiF.sub.4 0.5                                                                 NO        1                                                           __________________________________________________________________________

                                      TABLE 321                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  145 0.02                                 H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side:0.01 μm)                                                                     200→30**                                                     (UL-side:0.01 μm)                                                                    30→10**                                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          10→5**                                                       C.sub.2 H.sub.2                                                                         3                                                                   NO        1                                                                   SiF.sub.4 5                                                           Upper                                                                             1st SiH.sub.4                                                                              100     300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2  150                                                              region                                                                            Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                         0.5                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                    800 ppm                                                              AlCl.sub.3 /He                                                                         0.4                                                                  SiF.sub.4                                                                              0.5                                                                  NO       10                                                                   C.sub.2 H.sub.2                                                                        0.3                                                              and SiH.sub.4                                                                              300     300    20      0.5  7                                    layer                                                                             H.sub.2  300                                                              region                                                                            NO       2                                                                    Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                         0.2                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                    0.2 ppm                                                              SiF.sub.4                                                                              0.4                                                                  AlCl.sub.3 /He                                                                         0.2                                                                  C.sub.2 H.sub.2                                                                        0.3                                                              3rd SiH.sub.4                                                                              100     300    15      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                        15                                                               region                                                                            Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                         0.1                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                    0 ppm                                                                SiF.sub.4                                                                              0.3                                                                  AlCl.sub.3 /He                                                                         0.1                                                                  NO       0.1                                                              4th SiH.sub.4                                                                              50      300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                        30                                                               region                                                                            Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                         1                                                                    B.sub.2 H.sub.6 (against SiH.sub.4)                                                    1 ppm                                                                SiF.sub.4                                                                              0.5                                                                  AlCl.sub.3 /He                                                                         1                                                                    NO       0.5                                                          __________________________________________________________________________

                                      TABLE 322                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50     250     1      0.4  0.02                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side:0.01 μm)                                                                     200→30**                                                     (UL-side:0.01 μm)                                                                    30→10**                                                      Mg (C.sub.2 H.sub.5).sub.2 /He                                                          5                                                                   C.sub.2 H.sub.2                                                                         3                                                                   NO        5                                                                   SiF.sub.4 5                                                                   Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          3                                                           Upper                                                                             1st Mg (C.sub.2 H.sub.5).sub.2 /He                                                          0.5    300    10      0.35 3                                layer                                                                             layer                                                                             SiH.sub.4 100                                                             region                                                                            H.sub.2   150                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.3                                                                 SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.3                                                                 NO        10                                                                  Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.3                                                             2nd SiH.sub.4 300    300    20      0.5  3                                    layer                                                                             C.sub.2 H.sub.2                                                                         0.5→2*                                                   region                                                                            H.sub.2   300                                                                 Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.3                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             SiF.sub.4 0.3                                                                 Mg (C.sub.2 H.sub.5).sub.2 /He                                                          0.2                                                                 AlCl.sub.3 /He                                                                          0.2                                                                 NO        0.3                                                             3rd SiH.sub.4 100    300    15      0.4  20                                   layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1 ppm                                                               SiF.sub.4 0.3                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1 ppm                                                               SiF.sub.4 1                                                                   AlCl.sub.3 /He                                                                          1                                                                   NO        0.5                                                                 Mg (C.sub.2 H.sub.5).sub.2 /He                                                          0.5                                                         __________________________________________________________________________

                                      TABLE 323                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                        250     1      0.4  0.2                                     H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side:0.05 μm)                                                                     200→40**                                                     (UL-side:0.05 μm)                                                                    40→10**                                                      NO        5                                                                   C.sub.2 H.sub.2                                                                         1                                                                   Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          10→0.5**                                                     SiF.sub.4 1                                                           Upper                                                                             1st SiH.sub.4 100     300    10      0.35 3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.5                                                                 AlCl.sub.3 /He                                                                          0.5                                                                 Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.5                                                             2nd SiH.sub.4 300     300    20      0.5  8                                   layer                                                                             H.sub.2   300                                                             region                                                                            AlCl.sub.3 /He                                                                          0.3                                                                 SiF.sub.4 0.3                                                                 Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.3                                                                 C.sub.2 H.sub.2                                                                         0.2                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     5→0.3 ppm**                                                  NO        0.3                                                             3rd SiH.sub.4 100     300    15      0.4  20                                  layer                                                                             C.sub.2 H.sub.2                                                                         15                                                              region                                                                            SiF.sub.4 0.5                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             NO        0.1                                                             4th SiH.sub.4 50      300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1 ppm                                                               AlCl.sub.3 /He                                                                          1                                                                   SiF.sub.4 1                                                                   Cu (C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                          0.1                                                         __________________________________________________________________________

                                      TABLE 324                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   10→100*                                                                      250     1      0.4  0.2                                     H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                      200→40**                                                   (UL-side: 0.15 μm)                                                                     40→10**                                                    NO          5                                                                 SiF.sub.4   1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                           Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                             0.5                                                               C.sub.2 H.sub.2                                                                           1                                                         Upper                                                                             1st Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             0.5   300    10       0.35                                                                              3                               layer                                                                             layer                                                                             SiH.sub.4   100                                                           region                                                                            H.sub.2     150                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           AlCl.sub.3 /He                                                                            0.4                                                               SiF.sub.4   0.5                                                               NO          10                                                                C.sub.2 H.sub.2                                                                           0.5                                                               Mg(C.sub.5 H.sub.5).sub.2 /He                                                             0.4                                                           2nd AlCl.sub.3 /He                                                                            0.3   300    20      0.5  5                                   layer                                                                             SiH.sub.4   300                                                           region                                                                            SiF.sub.4   0.3                                                               H.sub.2     300                                                               NO          0.2                                                               C.sub.2 H.sub.2                                                                           0.2                                                               Mg(C.sub.5 H.sub.5).sub.2 /He                                                             0.2                                                               Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             0.3                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                       3rd Mg(C.sub.5 H.sub.5).sub.2 /He                                                             0.1   300    15      0.4  20                                  layer                                                                             SiF.sub.4   0.3                                                           region                                                                            AlCl.sub.3 /He                                                                            0.1                                                               SiH.sub.4   100                                                               C.sub.2 H.sub.2                                                               (U · 2nd LR-side: 1 μm)                                                       0.1→15*                                                    (U · 4th LR-side: 19 μm)                                                      15                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.1 ppm                                                           Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             0.1                                                               NO          0.1                                                           4th SiH.sub.4   50    300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                           30                                                            region                                                                            SiF.sub.4   1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                       1 ppm                                                             AlCl.sub.3 /He                                                                            1                                                                 NO          1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                             0.1                                                               Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             1                                                         __________________________________________________________________________

                                      TABLE 325                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   20    250     1      0.4  0.02                                    H.sub.2     5→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      80→15**                                                    (UL-side: 0.01 μm)                                                                     15→5**                                                     C.sub.2 H.sub.2                                                                           5                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             5                                                                 NO          10                                                        Upper                                                                             1st SiH.sub.4   100   300    10       0.35                                                                              3                               layer                                                                             layer                                                                             H.sub.2     150                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           AlCl.sub.3 /He                                                                            0.4                                                               NO          10                                                                C.sub.2 H.sub.2                                                                           0.5                                                               SiF.sub.4   0.5                                                               Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             0.4                                                           2nd SiH.sub.4   300   300    20      0.5  2                                   layer                                                                             H.sub.2     300                                                           region                                                                            NO          0.2                                                               C.sub.2 H.sub.2                                                                           0.3                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.2 ppm                                                           AlCl.sub.3 /He                                                                            0.1                                                               SiF.sub.4   0.5                                                               Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             0.4                                                           3rd SiH.sub.4   100   300    15      0.4  20                                  layer                                                                             C.sub.2 H.sub.2                                                           region                                                                            (U · 2nd LR-side: 5 μm)                                                       0.1→13*                                                    (U · 4th LR-side: 15 μm)                                                      13→17*                                                     NO          0.3                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.3 ppm                                                           SiF.sub.4   0.1                                                               AlCl.sub.3 /He                                                                            0.1                                                               Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             0.1                                                           4th SiH.sub.4   50    300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                           30                                                            region                                                                            NO          1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                       2 ppm                                                             SiF.sub.4   1                                                                 AlCl.sub.3 He                                                                             1                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             1                                                         __________________________________________________________________________

                                      TABLE 326                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   50    250     5      0.4  0.02                                    H.sub.2     5→20*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                      200→30**                                                   (UL-side: 0.01 μm)                                                                     30→10**                                                    NO          5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                       100 ppm                                                           Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             3                                                                 C.sub.2 H.sub.2                                                                           3                                                                 SiF.sub.4   5                                                         Upper                                                                             1st SiH.sub.4   100   300    10       0.35                                                                              3                               layer                                                                             layer                                                                             H.sub.2     150                                                           region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                           AlCl.sub.3 /He                                                                            0.3                                                               SiF.sub.4   0.5                                                               NO          10                                                                C.sub.2 H.sub.2                                                                           0.3                                                               Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             0.4                                                           2nd SiH.sub.4   300   300    20      0.5  5                                   layer                                                                             H.sub.2     300                                                           region                                                                            NO          0.1                                                               C.sub.2 H.sub.2                                                                           0.2                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0 ppm                                                             SiF.sub.4   0.5                                                               AlCl.sub.3 /He                                                                            0.3                                                               Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             0.2                                                           3rd SiH.sub.4         300    15      0.4  20                                  layer                                                                             (U · 2nd LR-side: 19 μm)                                                      100                                                           region                                                                            (U · 4th LR-side: 1 μm)                                                       100→50**                                                   SiF.sub.4   0.3                                                               AlCl.sub.3 /He                                                                            0.1                                                               NO          0.1                                                               C.sub.2 H.sub.2                                                               (U · 2nd LR-side: 19 μm)                                                      15                                                                (U · 4th LR-side: 1 μm)                                                       15→30**                                                    B.sub.2 H.sub.6 (against SiH.sub.4)                                                       0.1 ppm                                                           Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             0.1                                                           4th SiH.sub.4   50    300    10      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                           30                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                       1 ppm                                                             NO          1                                                                 SiF.sub.4   0.5                                                               AlCl.sub.3 /He                                                                            0.7                                                               Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                             1                                                         __________________________________________________________________________

                                      TABLE 327                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250     5      0.4  0.05                                      B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             NO        5                                                                   C.sub.2 H.sub.2                                                                         10                                                                  H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                          200→20**                                                     SiF.sub.4 1                                                                   Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           10→5**                                               Upper                                                                             1st Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.4   300    10       0.35                                                                              3                                 layer                                                                             layer                                                                             SiH.sub.4 100                                                             region                                                                            H.sub.2   150                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.3                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.4                                                             2nd AlCl.sub.3 /He                                                                          0.2   300    20      0.5  5                                     layer                                                                             SiF.sub.4 0.2                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.2                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.2                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                         3rd SiF.sub.4 0.3   300    15      0.4  20                                    layer                                                                             SiH.sub.4 100                                                             region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 C.sub.2 H.sub.2                                                                         15                                                                  Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                              NO        0.1                                                             4th SiH.sub.4 50    300    10      0.4  0.5                                   layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1 ppm                                                               AlCl.sub.3 /He                                                                          1                                                                   SiF.sub.4 0.5                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           1                                                           __________________________________________________________________________

                                      TABLE 328                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 20     300    0.3     0.2  0.02                                     NO        2                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             H.sub.2   5→100*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    80→15**                                                      (UL-side: 0.01 μm)                                                                   15→5**                                                       Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           10                                                                  C.sub.2 H.sub.2                                                                         1                                                                   SiF.sub.4 3                                                           Upper                                                                             1st SiH.sub.4 100    300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.5                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.4                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.5                                                             2nd AlCl.sub.3 /He                                                                          0.1    300    20      0.5  6                                    layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                         3rd SiF.sub.4 0.2    300    15      0.4  20                                   layer                                                                             AlCl.sub.3 /He                                                                          0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     12→1 ppm**                                                   NO        0.1                                                             4th SiH.sub.4 50     300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1 ppm                                                               SiF.sub.4 1                                                                   AlCl.sub.3 /He                                                                          1                                                                   Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.7                                                         __________________________________________________________________________

                                      TABLE 329                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4  50    300     1      0.3  0.02                                     NO         5                                                                  C.sub.2 H.sub.2                                                                          5                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                      100 ppm                                                            H.sub.2 S (against SiH.sub.4)                                                            10 ppm                                                             H.sub.2    5→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                     200→30**                                                    (UL-side: 0.01 μm)                                                                    30→10**                                                     SiF.sub.4  5                                                                  Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            10                                                         Upper                                                                             1st SiH.sub.4  100   300    10      0.35 3                                layer                                                                             layer                                                                             H.sub.2    150                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                      800 ppm                                                            AlCl.sub.3 /He                                                                           0.4                                                                SiF.sub.4  1                                                                  NO         10                                                                 H.sub.2 S (against SiH.sub.4)                                                            0.3 ppm                                                            C.sub.2 H.sub.2                                                                          0.5                                                                Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            0.1                                                            2nd AlCl.sub.3 /He                                                                           0.1   300    20      0.5  5                                    layer                                                                             SiF.sub.4  0.1                                                            region                                                                            SiH.sub.4  300                                                                H.sub.2    300                                                                H.sub.2 S (against SiH.sub.4)                                                            0.1 ppm                                                            Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            0.1                                                                C.sub.2 H.sub.2                                                                          0.1                                                                NO         0.1                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                      0.1 ppm                                                        3rd SiF.sub.4  0.1   300    15      0.4  20                                   layer                                                                             AlCl.sub.3 /He                                                                           0.1                                                            region                                                                            SiH.sub.4  100                                                                C.sub.2 H.sub.2                                                                          15                                                                 NO         0.1                                                                Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            0.1                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                      0.2 ppm                                                            PH.sub.3 (against SiH.sub.4)                                                             8 ppm                                                              H.sub.2 S (against SiH.sub.4)                                                            0.1 ppm                                                        4th SiH.sub.4  50    300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                          30                                                             region                                                                            NO         0.5                                                                Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            1                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                      1 ppm                                                              SiF.sub.4  0.5                                                                H.sub.2 S (against SiH.sub.4)                                                            1 ppm                                                              AlCl.sub.3 /He                                                                           1                                                                  PH.sub.3 (against SiH.sub.4)                                                             1 ppm                                                      __________________________________________________________________________

                                      TABLE 330                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4  50     250     1      0.4  0.02                                    NO         5                                                                  SiF.sub.4  5                                                                  H.sub.2    5→200*                                                      AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                     200→30**                                                    (UL-side: 0.01 μm)                                                                    30→10**                                                     Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            10→5**                                                      C.sub.2 H.sub.2                                                                          0.1                                                        Upper                                                                             1st SiH.sub.4  100    300    10       0.35                                                                              3                               layer                                                                             layer                                                                             H.sub.2    150                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                      800 ppm                                                            AlCl.sub.3 /He                                                                           0.5                                                                SiF.sub.4  0.5                                                                NO         10                                                                 C.sub.2 H.sub.2                                                                          0.5                                                                Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            0.4                                                            2nd AlCl.sub.3 /He                                                                           0.1    300    20      0.5  5                                   layer                                                                             SiF.sub.4  0.1                                                            region                                                                            SiH.sub.4  300                                                                H.sub.2    300                                                                NO         0.1                                                                C.sub.2 H.sub.2                                                                          0.1                                                                Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            0.1                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                      0.1 ppm                                                        3rd SiF.sub.4  0.2    300    15      0.4  20                                  layer                                                                             AlCl.sub.3 /He                                                                           0.2                                                            region                                                                            SiH.sub.4  100                                                                C.sub.2 H.sub.2                                                                          15                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            0.1                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                      0.3 ppm                                                            PH.sub.3 (against SiH.sub.4)                                                             10→1 ppm**                                                  NO         0.1                                                            4th SiH.sub.4  50     300    15      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                          30                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                      0.3 ppm                                                            Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            1                                                                  SiF.sub.4  0.5                                                                NO         0.5                                                                AlCl.sub.3 /He                                                                           0.1                                                                PH.sub.3 (against SiH.sub.4)                                                             1 ppm                                                      __________________________________________________________________________

                                      TABLE 331                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4  50    250     5      0.4  0.02                                     NO         5                                                                  C.sub.2 H.sub.2                                                                          0.5                                                                H.sub.2    10→200*                                                     AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                     100→10**                                                    (UL-side: 0.01 μm)                                                                    10                                                                 H.sub.2 S (against SiH.sub.4)                                                            1 ppm                                                              Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            3                                                                  SiF.sub.4  3                                                          Upper                                                                             1st SiH.sub.4  100   300    10       0.35                                                                              3                                layer                                                                             layer                                                                             H.sub.2    150                                                            region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                      800 ppm                                                            AlCl.sub.3 /He                                                                           0.4                                                                SiF.sub.4  0.5                                                                NO         10                                                                 C.sub.2 H.sub.2                                                                          0.4                                                                Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            0.5                                                                H.sub.2 S (against SiH.sub.4)                                                            0.5 ppm                                                        2nd AlCl.sub. 3 /He                                                                          0.1   300    20      0.5  5                                    layer                                                                             SiF.sub.4  0.1                                                            region                                                                            SiH.sub.4  300                                                                H.sub.2    300                                                                Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            0.1                                                                NO         0.1                                                                C.sub.2 H.sub.2                                                                          0.1                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                      0.2 ppm                                                            H.sub.2 S (against SiH.sub.4)                                                            0.1 ppm                                                        3rd SiF.sub.4  0.5   300    15      0.4  20                                   layer                                                                             AlCl.sub.3 /He                                                                           0.2                                                            region                                                                            SiH.sub.4  100                                                                C.sub.2 H.sub.2                                                                          15                                                                 NO         0.2                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                      0.3 ppm                                                            Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            0.1                                                                H.sub.2 S(against SiH.sub.4)                                                             0.1 ppm                                                        4th SiH.sub.4  50    300    10      0.4  0.5                                  layer                                                                             C.sub.2 H.sub.2                                                                          30                                                             region                                                                            NO         0.5                                                                Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                            1                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                      1 ppm                                                              SiF.sub.4  0.5                                                                AlCl.sub.3 /He                                                                           1                                                                  H.sub. 2 S (against SiH.sub.4)                                                           1 ppm                                                      __________________________________________________________________________

                                      TABLE 332                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250     1      0.3  0.02                                      NO        5                                                                   SiF.sub.4 1                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           8                                                                   C.sub.2 H.sub.2                                                                         0.5                                                         Upper                                                                             1st SiH.sub.4 100   300    10       0.35                                                                              3                                 layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.5                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.5                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                             2nd AlCl.sub.3 /He                                                                          0.1   300    20      0.5  5                                     layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                         3rd SiF.sub.4 0.5   300    15      0.4  10                                    layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.2                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             NO        0.1                                                             4th SiH.sub.4 50    300    10      0.4  0.5                                   layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1 ppm                                                               SiF.sub.4 1                                                                   AlCl.sub.3 /He                                                                          1                                                                   Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.8                                                         __________________________________________________________________________

                                      TABLE 333                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    150    0.5     0.3  0.02                                      NO        5     ↓                                                                             ↓                                               SiF.sub.4 1     300    1.5                                                    B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   10                                                                            30→10**                                                      C.sub.2 H.sub.2                                                                         1                                                                   Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           2                                                                   Mg(C.sub.5 H.sub.5).sub.2 /He                                                           3                                                           Upper                                                                             1st SiH.sub.4 100   300    10       0.35                                                                              3                                 layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.3                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.4                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.5                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.3                                                             2nd AlCl.sub.3 /He                                                                          0.1   300    20      0.5  5                                     layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 NO        0.1                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             3rd SiF.sub.4 0.2   300    15      0.4  30                                    layer                                                                             AlCl.sub.3 /He                                                                          0.1                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  NO        0.1                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             4th SiH.sub.4 50    300    10      0.4  0.5                                   layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.5                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub. 4)                                                    1 ppm                                                               SiF.sub.4 0.5                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.5                                                         __________________________________________________________________________

                                      TABLE 334                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250     1      0.4  0.02                                      NO        5                                                                   SiF.sub.4 0.5                                                                 H.sub.2 S (against SiH.sub.4)                                                           10 ppm                                                              H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      NH.sub.3  0.5                                                                 C.sub.2 H.sub.2                                                                         0.8                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           5                                                           Upper                                                                             1st SiH.sub.4 100   300    10       0.35                                                                              3                                 layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.4                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.4                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.3                                                                 H.sub.2 S (against SiH.sub.4)                                                           ppm                                                                 NH.sub.3  0.3                                                             2nd AlCl.sub.3 /He                                                                          0.1   300    20      0.5  5                                     layer                                                                             SiF.sub.4 0.1                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.2                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             H.sub.2 S (against SiH.sub.4)                                                           0.1 ppm                                                             NH.sub.3  0.1                                                             3rd SiF.sub.4 0.5   300    15      0.4  20                                    layer                                                                             AlCl.sub.3 /He                                                                          0.1                                                             region                                                                            SiH.sub.4 100                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.2                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.2 ppm                                                             NH.sub.3  100                                                                 H.sub.2 S (against SiH.sub.4)                                                           0.1 ppm                                                         4th SiH.sub.4 50    300    10      0.4  0.5                                   layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1 ppm                                                               SiF.sub.4 1                                                                   AlCl.sub. 3 /He                                                                         1                                                                   H.sub.2 S (against SiH.sub.4)                                                           1 ppm                                                               Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           1.5                                                         __________________________________________________________________________

                                      TABLE 335                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                      250     5      0.4  0.2                                       H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→40**                                                     (UL-side: 0.15 μm)                                                                   40→10**                                                      C.sub.2 H.sub.2                                                                         2                                                                   NO        5→20*                                                        SiF.sub.4 2                                                                   Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           1                                                           Upper                                                                             1st SiH.sub.4 100   300    10       0.35                                                                              3                                 layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.5                                                                 NO        10                                                                  SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.5                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.4                                                             2nd AlCl.sub.3 /He                                                                          0.1   300    20      0.5  10                                    layer                                                                             H.sub.2   300                                                             region                                                                            SiF.sub.4 20                                                                  SiH.sub.4 300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             NO        0.1                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                             3rd AlCl.sub.3 /He                                                                          0.1   300    15      0.4  20                                    layer                                                                             SiF.sub.4 10                                                              region                                                                            SiH.sub.4 100                                                                 N.sub.2   500                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                             4th SiH.sub.4 50    300    10      0.4  0.5                                   layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1 ppm                                                               AlCl.sub.3 /He                                                                          1                                                                   SiF.sub.4 3                                                                   Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           1                                                                   NO        1                                                           __________________________________________________________________________

                                      TABLE 336                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 25    300    0.5     0.2  0.02                                      H.sub.2   5→100*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    100→15**                                                     (UL-side: 0.01 μm)                                                                   15→5**                                                       C.sub.2 H.sub.2                                                                         1                                                                   NO        3                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             SiF.sub.4 1                                                                   Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           2                                                           Upper                                                                             1st SiH.sub.4 100   300    10       0.35                                                                              3                                 layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             C.sub.2 H.sub.2                                                                         0.5                                                                 AlCl.sub.3 /He                                                                          0.4                                                                 NO        10                                                                  SiF.sub.4 0.5                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.4                                                             2nd SiF.sub.4 0.5   300    15      0.4  20                                    layer                                                                             SiH.sub. 4                                                                              100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SnH.sub.4 0.3                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                             3rd SiF.sub.4 0.5   300    20      0.5  5                                     layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 SnH.sub.4 0.2                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                             4th SiH.sub.4 50    300    10      0.4  0.5                                   layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            AlCl.sub.3 /He                                                                          1                                                                   SiF.sub.4 1                                                                   NO        0.5                                                                 SnH.sub.4 1.5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1 ppm                                                               Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           1                                                           __________________________________________________________________________

                                      TABLE 337                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250     1      0.3  0.02                                      H.sub.2   5→200*                                                       AlCl.sub.3 /He                                                                (S-side: 0.01 μm)                                                                    200→30**                                                     (UL-side: 0.01 μm)                                                                   30→10**                                                      C.sub.2 H.sub.2                                                                         1                                                                   NO        5                                                                   B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             Mg(C.sub.5 H.sub.5).sub.2 /He                                                           2                                                                   SiF.sub.4 0.5                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           5                                                           Upper                                                                             1st SiH.sub.4 100   300    10       0.35                                                                              3                                 layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             C.sub.2 H.sub.2                                                                         0.4                                                                 AlCl.sub.3 /He                                                                          0.3                                                                 NO        10                                                                  SiF.sub.4 0.5                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.4                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.5                                                             2nd SiF.sub.4 0.3   300    15      0.4  20                                    layer                                                                             SiH.sub.4 100                                                             region                                                                            C.sub.2 H.sub.2                                                                         15                                                                  AlCl.sub.3 /He                                                                          0.2                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     10 ppm                                                              Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.2                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             3rd SiF.sub.4 0.2   300    20      0.5  4                                     layer                                                                             SiH.sub.4 300                                                             region                                                                            H.sub.2   300                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 AlCl.sub.3 /He                                                                          0.1                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             4th SiH.sub.4 50    300    10      0.4  0.5                                   layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            AlCl.sub.3 /He                                                                          0.1                                                                 SiF.sub.4 0.5                                                                 NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.3 ppm                                                             Cu(C.sub.4 H.sub.7 N.sub. 2 O.sub.2).sub.2 /He                                          1                                                                   Mg(C.sub.5 H.sub.5).sub.2 /He                                                           5                                                           __________________________________________________________________________

                                      TABLE 338                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 50    250     1      0.4  0.02                                      NO        5                                                                   SiF.sub.4 1                                                                   H.sub.2   10→200*                                                      AlCl.sub.3 /He                                                                          120→40**                                                     Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           10                                                                  C.sub.2 H.sub.2                                                                         0.8                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           5→0.2*                                               Upper                                                                             1st SiH.sub.4 100   300    10       0.35                                                                              3                                 layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.5                                                                 SiF.sub.4 0.5                                                                 NO        10                                                                  C.sub.2 H.sub.2                                                                         0.3                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             2nd AlCl.sub.3 /He                                                                          0.2   300    15      0.4  20                                    layer                                                                             SiF.sub.4 0.5                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  NO        0.1                                                                 PH.sub.3 (against SiH.sub.4)                                                            8 ppm                                                               B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             3rd AlCl.sub.3 /He                                                                          0.1   300    20      0.5  6                                     layer                                                                             SiH.sub.4 300                                                             region                                                                            SiF.sub.4 0.5                                                                 H.sub.2   300                                                                 NO        0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 PH.sub.3 (against SiH.sub.4)                                                            0.1 ppm                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                                 Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.2                                                             4th SiH.sub.4 50    300    10      0.4  0.5                                   layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     1 ppm                                                               AlCl.sub.3 /He                                                                          1                                                                   SiF.sub.4 1                                                                   PH.sub.3 (against SiH.sub.4)                                                            1 ppm                                                               Mg(C.sub.5 H.sub.5).sub.2 /He                                                           0.5                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           1                                                           __________________________________________________________________________

                                      TABLE 339                                   __________________________________________________________________________    Order of                                                                              Gases and         Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                           lamination                                                                            their flow rates  temperature                                                                          power   pressure                                                                           thickness                       (layer name)                                                                          (SCCM)            (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                         __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 10→100*                                                                        300    10      0.4  0.2                                     NO        5→20*                                                        H.sub.2   5→200*                                                       B.sub.2 H.sub.6 (against SiH.sub.4)                                                     100 ppm                                                             AlCl.sub.3 /He                                                                (S-side: 0.05 μm)                                                                    200→0**                                                      (UL-side: 0.15 μm)                                                                   40→10**                                                      C.sub.2 H.sub.2                                                                         1                                                                   SiF.sub.4 1                                                                   Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           5                                                           Upper                                                                             1st SiH.sub.4 100     300    10       0.35                                                                              3                               layer                                                                             layer                                                                             H.sub.2   150                                                             region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             AlCl.sub.3 /He                                                                          0.3                                                                 NO        10                                                                  SiF.sub.4 0.5                                                                 C.sub.2 H.sub.2                                                                         0.4                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.4                                                             2nd AlCl.sub.3 /He                                                                          0.1     300    15      0.4  20                                  layer                                                                             SiF.sub.4 0.2                                                             region                                                                            SiH.sub.4 100                                                                 C.sub.2 H.sub.2                                                                         15                                                                  B.sub.2 H.sub.6 (against SiH.sub.4)                                                     12→0.1 ppm**                                                 NO        0.1                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                             3rd AlCl.sub.3 /He                                                                          0.1     300    20      0.5  3                                   layer                                                                             SiF.sub.4 0.2                                                             region                                                                            SiH.sub.4 300                                                                 H.sub.2   300                                                                 NO        0.1                                                                 Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           0.1                                                                 C.sub.2 H.sub.2                                                                         0.1                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                         4th SiH.sub.4 50      300    15      0.4  0.5                                 layer                                                                             C.sub.2 H.sub.2                                                                         30                                                              region                                                                            NO        0.5                                                                 B.sub.2 H.sub.6 (against SiH.sub.4)                                                     0.1 ppm                                                             AlCl.sub.3 /He                                                                          1                                                                   SiF.sub.4 1                                                                   Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                           1                                                           __________________________________________________________________________

                                      TABLE 340                                   __________________________________________________________________________    Order of                                                                              Gases and          Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                          lamination                                                                            their flow rates   temperature                                                                          power   pressure                                                                           thickness                      (layer name)                                                                          (SCCM)             (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                        __________________________________________________________________________    Lower layer                                                                           SiH.sub.4    50    300     2      0.3  0.05                                   H.sub.2      5→200*                                                    Al(CH.sub.3)He                                                                (S-side: 0.03 μm)                                                                       200→50**                                                  (UL-side: 0.02 μm)                                                                      50→5**                                                    SiF.sub.4    1                                                                NO           5                                                                B.sub.2 H.sub.6 (against SiH.sub.4)                                                        100 ppm                                                          CH.sub.4     1                                                                Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                              20→2**                                                    Mg(C.sub.5 H.sub.5).sub.2 /He                                                              5→1**                                             Upper                                                                             1st SiH.sub.4    100   300    10      0.4  10                             layer                                                                             layer                                                                             H.sub.2      100                                                          region                                                                            Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                              0.6                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                        1500 ppm                                                         CH.sub.4     5                                                                SiF.sub.4    5                                                                Al(CH.sub.3)He                                                                             0.3                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                              0.3                                                              NO                                                                            (LL-side: 9 μm)                                                                         5                                                                (U · 2nd LR-side: 1 μm)                                                        5→0.1**                                               2nd SiH.sub.4    300   300    25      0.5  25                                 layer                                                                             H.sub.2      300                                                          region                                                                            NO           0.1                                                              Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                              0.1                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                        0.5 ppm                                                          CH.sub.4     1                                                                SiF.sub.4    1                                                                Al(CH.sub.3)He                                                                             0.1                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                              0.1                                                          3rd SiH.sub.4    200   300    15      0.4  5                                  layer                                                                             H.sub.2      200                                                          region                                                                            Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                              0.2                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                        0.1 ppm                                                          PH.sub.3 (against SiH.sub.4)                                                               1000 ppm                                                         SiF.sub.4    1                                                                Al(CH.sub.3)He                                                                             0.1                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                              0.2                                                              NO           0.1                                                              CH.sub.4                                                                      (U · 2nd LR-side: 1 μm)                                                        1→600*                                                    (U · 4th LR-side: 4 μm)                                                        600                                                          4th H.sub.2      200   300    10      0.4  0.3                                layer                                                                             SiF.sub.4    5                                                            region                                                                            Cu(C.sub.4 H.sub.7 N.sub.2 O.sub.2).sub.2 /He                                              0.5                                                              B.sub.2 H.sub.6 (against SiH.sub.4)                                                        1 ppm                                                            PH.sub.3 (against SiH.sub.4)                                                               5 ppm                                                            NO           0.5                                                              CH.sub.4     600                                                              Al(CH.sub.3)He                                                                             0.5                                                              Mg(C.sub.5 H.sub.5).sub.2 /He                                                              0.5                                                              SiH.sub.4                                                                     (U · 3rd LR-side: 0.03 μm)                                                     200→20**                                                  (FS-side: 0.27 μm)                                                                      20                                                       __________________________________________________________________________

                                      TABLE 341                                   __________________________________________________________________________    Order of                                                                              Gases and        Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                            lamination                                                                            their flow rates temperature                                                                          power   pressure                                                                           thickness                        (layer name)                                                                          (SCCM)           (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4   30   330     1       0.01                                                                              0.05                                     H.sub.2     5→100*                                                     Ar          100                                                       Upper                                                                             1st SiH.sub.4   100  250    10      0.4  3                                layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                       800 ppm                                                       region                                                                            NO                                                                            (LL-side: 2 μm)                                                                        10                                                                (U · 2nd LR-side: 1 μm)                                                       10→0**                                                     H.sub.2     100                                                           2nd SiH.sub.4   300  250    15      0.5  20                                   layer                                                                             H.sub.2     300                                                           region                                                                        3rd SiH.sub.4   50   250    10      0.4  0.5                                  layer                                                                             CH.sub.4    500                                                           region                                                                    __________________________________________________________________________

                                      TABLE 342                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 5→50*                                                                        250     5      0.4  0.05                                      H.sub.2   10→200*                                                      Al(CH.sub.3).sub.3 /He                                                                  120→40**                                                     NaNH.sub.2 /He                                                                          10                                                          Upper                                                                             1st SiH.sub.4 100   250    10      0.4  3                                 layer                                                                             layer                                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                     500 ppm                                                         region                                                                            NO        5                                                                   H.sub.2   100                                                             2nd SiH.sub.4 300   250    15      0.5  20                                    layer                                                                             H.sub.2   300                                                             region                                                                        3rd SiH.sub.4 50    250    10      0.4  0.5                                   layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 343                                   __________________________________________________________________________             Comparative Example 2                                                                     Example 1                                                                           Example 2                                          __________________________________________________________________________    Al(CH.sub.3).sub.3 /He                                                                 120→10**                                                                     120→20**                                                                     120→40**                                                                     120→60**                                                                     120→80**                              Flow rates                                                                    (sccm)                                                                        Content of Al                                                                           9    14    21    27    35                                           (atomic %)                                                                    Ratio of film                                                                          22    10     1    0.95  0.93                                         peeling-off                                                                   (Example 1 = 1)                                                               __________________________________________________________________________

                  TABLE 344                                                       ______________________________________                                        Order of lamination                                                                           Gases and their flow rates (sccm)                             ______________________________________                                        Lower layer     SiF.sub.4       3                                                             NO              3                                                             CH.sub.4        2                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                          100 ppm                                        Upper 1st layer region                                                                            CH.sub.4        2                                         layer               SiF.sub.4       1                                                             Zn(C.sub.2 H.sub.5).sub.2 /He                                                                 1                                               2nd layer region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                           0.5 ppm                                                       NO              0.1                                                           CH.sub.4        1                                                             SiF.sub.4       0.2                                                           Zn(C.sub.2 H.sub.5).sub.2 /He                                                                 0.3                                             3rd layer region                                                                            SiF.sub.4       1                                                             B.sub.2 H.sub.6 (against SiH.sub.4)                                                           2 ppm                                                         NO              0.5                                                           Al(CH.sub.3).sub.3 /He                                                                        0.5                                                           Zn(C.sub.2 H.sub.5).sub.2 /He                                                                 1                                         ______________________________________                                    

                                      TABLE 345                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            RF discharging                                                                        Inner                                                                              Layer                             lamination                                                                            their flow rates                                                                              temperature                                                                          power   pressure                                                                           thickness                         (layer name)                                                                          (SCCM)          (°C.)                                                                         (mW/cm.sup.3)                                                                         (Torr)                                                                             (μm)                           __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 5→50*                                                                        300     5      0.4  0.05                                      H.sub.2   10→200*                                                      Al(CH.sub.3).sub.3 /He                                                                  120→40**                                                     Y(oi-C.sub.3 H.sub.7 ).sub.3 /He                                                        10                                                          Upper                                                                             1st SiH.sub.4 200   300    30      0.5  5                                 layer                                                                             layer                                                                             C.sub.2 H.sub.2                                                                         20                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     800 ppm                                                             H.sub.2   500                                                             2nd SiH.sub.4 200   300    30      0.5  5                                     layer                                                                             C.sub.2 H.sub.2                                                                         20                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     5 ppm                                                               H.sub.2   300                                                             3rd SiH.sub.4 300   300    15      0.5  5                                     layer                                                                             H.sub.2   300                                                             region                                                                        4th SiH.sub.4 50    300    10      0.4  0.5                                   layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

                                      TABLE 346                                   __________________________________________________________________________    Order of                                                                              Gases and       Substrate                                                                            μW    Inner                                                                              Layer                            lamination                                                                            their flow rates                                                                              temperature                                                                          discharging                                                                            pressure                                                                           thickness                        (layer name)                                                                          (SCCM)          (°C.)                                                                         power (mW/cm.sup.3)                                                                    (Torr)                                                                             (μm)                          __________________________________________________________________________    Lower layer                                                                           SiH.sub.4 15→150*                                                                      250    0.5      0.6  0.07                                     SiF.sub.4 10→20*                                                       H.sub.2   20→300*                                                      Al(CH.sub.3).sub.3 /He                                                                  400→50**                                                     NaNH.sub.2 /He                                                                          20                                                          Upper                                                                             1st SiH.sub.4 230   250    0.5      0.5  3                                layer                                                                             layer                                                                             SiF.sub.4 20                                                              region                                                                            B.sub.2 H.sub.6 (against SiH.sub.4)                                                     150 ppm                                                             NO        10                                                                  H.sub.2   150                                                             2nd SiH.sub.4 700   250    0.5      0.5  20                                   layer                                                                             SiF.sub.4 30                                                              region                                                                            H.sub.2   500                                                             3rd SiH.sub.4 150   250    0.5      0.3  1                                    layer                                                                             CH.sub.4  500                                                             region                                                                    __________________________________________________________________________

What is claimed is:
 1. An electrophotographic process comprising thesteps of:(a) charging a light receiving member having an aluminumsupport and a multilayered light receiving layer exhibitingphotoconductivity formed on said aluminum support, characterized in thatsaid multilayered light receiving layer comprises: (i) a lower layer (a)in contact with said support and (ii) an upper layer (b) having a freesurface disposed of said lower layer (a); said lower layer (a)comprising an inorganic material composed of aluminum atoms, siliconatoms, hydrogen atoms and atoms of an element capable of contributing tothe control of image quality selected from the group consisting ofboron, gallium, indium, thallium, phosphorous, arsenic, antimony,bismuth, sulfur, selenium, tellurium and polonium; said lower layer (a)having a portion in which said aluminum, silicon and hydrogen atoms areunevenly distributed across the layer thickness; said aluminum atomsbeing contained in said lower layer (a) such that their contentdecreases across the layer thickness upward from the interface betweensaid lower layer (a) and said aluminum support and wherein said contentof said aluminum atoms is lower than 95 atomic % in the vicinity of theinterface between said lower layer (a) and said aluminum support andhigher than 5 atomic % in the vicinity of the interface between saidlower layer (a) and said upper layer (b); and said upper layer (b)comprising a plurality of layer regions, each said region comprising anon-single-crystal material composed of silicon atoms as the matrix, andwherein the layer region adjacent said lower layer (a) comprises (iii) anon-single-crystal material containing silicon atoms as the matrix, (iv)at least one kind of atom selected from the group consisting of hydrogenatoms and halogen atoms, and (v) at least one kind of atom selected fromthe group consisting of carbon atoms, nitrogen atoms and oxygen atoms;and (b) irradiating said charged light receiving member with anelectromagnetic wave carrying information, thereby forming anelectrostatic latent image.
 2. The process according to claim 1, whereinthe amount of said silicon atoms contained in the lower layer is from 5to 95 atomic %.
 3. The process according to claim 1, wherein the amountof said hydrogen atoms contained in the lower layer is from 0.01 to 70atomic %.
 4. The process according to claim 1, wherein the amount ofsaid atoms capable of contributing to the control of image qualitycontained in the lower layer is from 1×10⁻³ to 5×10⁴ atomic ppm.
 5. Theprocess according to claim 1, wherein the lower layer further containsone kind of atoms selected from the group consisting of carbon atoms,nitrogen atoms and oxygen atoms.
 6. The process according to claim 5,wherein the amount of said one kind of atoms contained in the lowerlayer is from 1×10³ to 5×10⁵ ppm.
 7. The process according to claim 1,wherein the lower layer further contains a halogen selected from thegroup consisting of fluorine atoms, chlorine atoms, bromine atoms andiodine atoms.
 8. The process according to claim 7, wherein the amount ofsaid halogen contained in the lower layer is from 1 to 4×10⁵ atomic ppm.9. The process according to claim 5, wherein the lower layer furthercontains a halogen selected from the group consisting of fluorine atoms,chlorine atoms, bromine atoms and iodine atoms.
 10. The processaccording to claim 9, wherein the amount of said halogen contained inthe lower layer is from 1 to 4×10⁵ atomic ppm.
 11. The process accordingto claim 1, wherein the lower layer further contains one kind of atomsselected from the group consisting of germanium atoms and tin atoms. 12.The process according to claim 11, wherein the amount of said one kindof atoms contained in the lower layer is from 1 to 9×10⁵ ppm.
 13. Theprocess according to claim 5, wherein the lower layer further containsone kind of atoms selected from the group consisting of germanium atomsand tin atoms.
 14. The process according to claim 3, wherein the amountof said one kind of atoms contained in the lower layer is from 1 to9×10⁵ ppm.
 15. The process according to claim 7, wherein the lower layerfurther contains one kind of atoms selected from the group consisting ofgermanium atoms and tin atoms.
 16. The process according to claim 15,wherein the amount of said one kind of atoms contained in the lowerlayer is from 1 to 9×10⁵ ppm.
 17. The process according to claim 1,wherein the lower layer further contains atoms of a metal selectedyttrium, manganese and zinc.
 18. The process according to claim 17,wherein the amount of said metal atoms contained in the lower layer isfrom 1 to 2×10⁵ atomic ppm.
 19. The process according to claim 5,wherein the lower layer further contains atoms of a metal selected fromthe group consisting of magnesium, copper, sodium, yttrium, manganeseand zinc.
 20. The process according to claim 19, wherein the amount ofsaid metal atoms contained in the lower layer is from 1 to 2×10⁵ atomicppm.
 21. The process according to claim 7, wherein the lower layerfurther contains atoms of a metal selected from the group consisting ofmagnesium, copper, sodium, yttrium, manganese and zinc.
 22. The processaccording to claim 21, wherein the amount of said metal atoms containedin the lower layer is from 1 to 2×10⁵ atomic ppm.
 23. The processaccording to claim 11, wherein the lower layer further contains atoms ofa metal selected from the group consisting of magnesium, copper, sodium,yttrium, manganese and zinc.
 24. The process according to claim 23,wherein the amount of said metal atoms contained in the lower layer isfrom 1 to 2×10⁵ atomic ppm.
 25. The process according to claim 1,wherein the amount of said one kind of atoms selected from the groupconsisting of carbon atoms, nitrogen atoms and oxygen atoms contained inthe layer region of the upper layer (b) adjacent the lower layer (a) isfrom 9.5×10⁵ atomic ppm.
 26. The process according to claim 1, whereinthe lower layer is 0.03 to 5 μm thick and the upper layer is 1 to 130 μmthick.